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TS5A9411
SCDS241B – MAY 2008 – REVISED DECEMBER 2016
TS5A9411 10-Ω 1:2 SPDT Analog Switch
Single-Channel 2:1 Multiplexer and Demultiplexer
1 Features
2 Applications
•
•
•
•
•
•
•
1
•
•
•
•
•
•
•
•
•
Specified Break-Before-Make Switching
Low ON-State Resistance
(10-Ω Maximum at VCC = 5 V)
Low Power Consumption
TTL- and CMOS-Compatible Control Input
Low Input and Output Capacitance
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion
2.25-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Control Inputs Are 5.5-V Tolerant
Cell Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample-and-Hold Circuits
3 Description
The TS5A9411 device is a bidirectional, single-pole
double-throw (SPDT) analog switch that is designed
to operate from 2.25 V to 5.5 V. The device offers low
ON-state resistance, low leakage, and low power with
a break-before-make feature. These features make
this device suitable for portable and battery-powered
applications.
Device Information(1)
PART NUMBER
TS5A9411
PACKAGE
SOT (6)
BODY SIZE (NOM)
2.00 mm × 1.25 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
SPDT
NC
COM
NO
IN
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A9411
SCDS241B – MAY 2008 – REVISED DECEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
3
3
4
4
4
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: 5-V Supply .......................
Electrical Characteristics: 3-V Supply .......................
Electrical Characteristics: 2.5-V Supply ....................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 8
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 12
9
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application .................................................. 13
10 Power Supply Recommendations ..................... 14
11 Layout................................................................... 14
11.1 Layout Guidelines ................................................. 14
11.2 Layout Example .................................................... 14
12 Device and Documentation Support ................. 15
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Device Support......................................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
16
16
16
16
16
16
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (July 2008) to Revision B
Page
•
Added Device Information table, Pin Configuration and Functions section, Specifications section, ESD Ratings table,
Recommended Operating Conditions table, Detailed Description section, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Deleted Ordering Information table; see Package Option Addendum at the end of the data sheet ...................................... 1
•
Deleted Summary of Characteristics table ............................................................................................................................. 1
•
Moved ON-state switch current and ON-state peak switch current From: Absolute Maximum Ratings table To:
Recommended Operating Conditions table............................................................................................................................ 4
•
Added Thermal Information table ........................................................................................................................................... 4
•
Changed Package thermal impedance, RθJA, value in Thermal Information table From: 259°C/W To: 346.7°C/W .............. 4
•
Deleted Charge Injection vs VCOM graph from Typical Characteristics .................................................................................. 7
•
Changed graph title From: OFF Isolation vs Crosstalk (VCC = 3 V) To: Crosstalk and Insertion Loss vs Frequency
(VCC = 3 V) in Typical Characteristics..................................................................................................................................... 7
•
Changed V+ to VCC and IN to VIN on all images in Parameter Measurement Information..................................................... 8
2
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SCDS241B – MAY 2008 – REVISED DECEMBER 2016
5 Pin Configuration and Functions
DCK Package
6-Pin SOT
Top View
IN 1
6
NO
VCC 2
5 COM
GND 3
4 NC
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
COM
5
I/O
Common signal path
GND
3
—
Digital ground
IN
1
I
NC
4
I/O
Normally closed signal path
NO
6
I/O
Normally open signal path
VCC
2
—
Power supply
Digital control input. High = COM connected to NO; Low = COM connected to NC.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
Supply voltage
–0.3
6
V
Analog voltage (3)
–0.3
VCC + 0.3
V
Digital input voltage
–0.5
VCC + 0.3
V
Analog port diode current (VNC, VNO, VCOM < 0)
–50
Digital input clamp current (VI < 0)
–50
Continuous current through VCC
–100
Storage temperature, Tstg
–65
(2)
(3)
mA
100
Continuous current through GND
(1)
mA
mA
mA
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
This value is limited to 5.5 V (maximum).
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SCDS241B – MAY 2008 – REVISED DECEMBER 2016
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VCC
Supply voltage
VNO
VNC
Analog voltage
VCOM
VI
2.25
5.5
NC
0
VCC
NO
0
VCC
COM
0
VCC
Digital input voltage
ON-state switch current (VNO, VNC, VCOM = 0 to VCC)
ON-state peak switch current (VNO, VNC, VCOM = 0 to VCC) (1)
(1)
MAX
UNIT
V
V
0
5.5
V
–50
50
mA
–200
200
mA
Pulse at 1-ms duration < 10% duty cycle
6.4 Thermal Information
TS5A9411
THERMAL METRIC
(1)
DCK (SOT)
UNIT
12 PINS
RθJA
Junction-to-ambient thermal resistance
346.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
163.7
°C/W
RθJB
Junction-to-board thermal resistance
154.5
°C/W
ψJT
Junction-to-top characterization parameter
17.4
°C/W
ψJB
Junction-to-board characterization parameter
153.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics: 5-V Supply
VCC = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG SWITCH
rON
ON-state resistance
VNO or VNC = 3 V, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
ΔrON
ON-state resistance match
between channels
VNO or VNC = 3 V, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
rON(FLAT)
ON-state resistance flatness
0 ≤ (VNO or VNC) ≤ VCC, VCC = 4.5 V,
ICOM = –10 mA, Switch ON, see Figure 5
INC(OFF),
INO(OFF)
VNC or VNO = 1 V and VCOM = 1 V to 4.5 V, or
VNC or VNO = 4.5 V and VCOM = 1 V;
VCC = 5.5 V, Switch OFF, see Figure 6
TA = 25°C
NC, NO OFF leakage current
INC(ON),
INO(ON)
VNC or VNO = 1 V and VCOM = 1 V, or
VNC or VNO = 4.5 V and VCOM = 4.5 V;
VCC = 5.5 V, Switch ON, see Figure 7
TA = 25°C
NC, NO ON leakage current
ICOM(ON)
COM ON leakage current
VNC or VNO = Open, VCOM = 1 V or 4.5 V,
VCC = 5.5 V, Switch ON, see Figure 7
TA = 25°C
5.3
–40°C ≤ TA ≤ 85°C
9
10
0.03
–40°C ≤ TA ≤ 85°C
0.3
0.3
2
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 85°C
Ω
Ω
Ω
–500
500
pA
–3
3
nA
–500
500
pA
–3
3
nA
–500
500
pA
–3
3
nA
2.4
5.5
2
5.5
DIGITAL INPUT (IN) (1)
4.5 V ≤ VCC ≤ 5.5 V
VIH
Input logic high
–40°C ≤ TA ≤ 85°C
VIL
Input logic low
4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C
IIH, IIL
Input leakage current
VI = 5.5 V or 0, VCC = 5.5 V
Turnon time
VCOM = 3 V, RL = 300 Ω, CL =
35 pF, see Figure 9
VCC = 4.5 V
0
0.8
TA = 25°C
–0.05
0.05
–40°C ≤ TA ≤ 85°C
–0.05
0.05
V
V
µA
DYNAMIC
tON
(1)
4
VCC = 5 V, TA = 25°C
9
4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C
10
ns
All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or
Floating CMOS Inputs (SCBA004).
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Electrical Characteristics: 5-V Supply (continued)
VCC = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCC = 5 V, TA = 25°C
tOFF
Turnoff time
VCOM = 3 V, RL = 300 Ω, CL =
35 pF, see Figure 9
tBBM
Break-before-make time
VNC = VNO = 3 V, RL = 300 Ω, CL = 35 pF, see
Figure 10
QC
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14
CNC(OFF),
CNO(OFF)
NC, NO OFF capacitance
CNC(ON),
CNO(ON)
MAX
7
4.5 V ≤ VCC ≤ 5.5 V, –40°C ≤ TA ≤ 85°C
TA = 25°C
7.5
1
–40°C ≤ TA ≤ 85°C
UNIT
ns
ns
0.9
12.5
pC
VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
3.5
pF
NC, NO ON capacitance
VNC or VNO = VCC or GND, f = 1 MHz, see Figure 8
8.5
pF
CCOM(ON)
COM ON capacitance
VCOM = VCC or GND, f = 1 MHz, Switch ON, see Figure 8
8.5
pF
CI
Digital input capacitance
VI = VCC or GND, f = 1 MHz, see Figure 8
25
pF
BW
Bandwidth
RL = 50 Ω, Switch ON, see Figure 11
100
MHz
OISO
OFF isolation
RL = 50 Ω, CL = 5 pF, f = 1 MHz, Switch OFF, see Figure 12
–84
dB
XTALK
Crosstalk
RL = 50 Ω, CL = 5 pF, f = 1 MHz, Switch ON, see Figure 13
–85
dB
THD
Total harmonic distortion
RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15
0.03%
Positive supply current
VI = VCC or GND, VCC = 5.5 V, Switch ON or OFF
SUPPLY
ICC
TA = 25°C
0.01
–40°C ≤ TA ≤ 85°C
0.5
µA
6.6 Electrical Characteristics: 3-V Supply
VCC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
11.5
15
UNIT
ANALOG SWITCH
rON
ON-state resistance
VNO or VNC = 1.5 V, VCC = 2.7 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
ΔrON
ON-state resistance match
between channels
VNO or VNC = 1.5 V, VCC = 2.7 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
rON(FLAT)
ON-state resistance flatness
0 ≤ (VNO or VNC) ≤ VCC, ICOM = –10 mA, Switch ON, see Figure 5
INC(OFF),
INO(OFF)
VNC or VNO = 1 V and VCOM = 1 V to 3 V, or
VNC or VNO = 3 V and VCOM = 1 V;
VCC = 3.3 V, Switch OFF, see Figure 6
TA = 25°C
NC, NO OFF leakage current
INC(ON),
INO(ON)
VNC or VNO = 1 V and VCOM = 1 V, or
VNC or VNO = 3 V and VCOM = 3 V;
VCC = 3.3 V, Switch ON, see Figure 7
TA = 25°C
NC, NO ON leakage current
ICOM(ON)
COM ON leakage current
VNC or VNO = Open, VCOM = 1 V or 3 V,
VCC = 3.3 V, Switch ON, see Figure 7
TA = 25°C
–40°C ≤ TA ≤ 85°C
20
0.05
–40°C ≤ TA ≤ 85°C
0.3
0.3
2
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 85°C
Ω
Ω
Ω
–400
400
pA
–2
2
nA
–400
400
pA
–2
2
nA
–400
400
pA
–2
2
nA
DIGITAL INPUT (IN) (1)
VIH
Input logic high
–40°C ≤ TA ≤ 85°C
2
5.5
V
VIL
Input logic low
–40°C ≤ TA ≤ 85°C
0
0.8
V
TA = 25°C
–0.05
0.05
–40°C ≤ TA ≤ 85°C
–0.05
0.05
IIH, IIL
Input leakage current
VI = 5.5 V or 0, VCC = 3.6 V
tON
Turnon time
VCOM = 3 V, RL = 300 Ω,
CL = 35 pF, see Figure 9
VCC = 3.3 V, TA = 25°C
13
2.7 V ≤ VCC ≤ 3.3 V, –40°C ≤ TA ≤ 85°C
15
tOFF
Turnoff time
VCOM = 3 V, RL = 300 Ω,
CL = 35 pF, see Figure 9
VCC = 3.3 V, TA = 25°C
7.5
2.7 V ≤ VCC ≤ 3.3 V, –40°C ≤ TA ≤ 85°C
8.5
tBBM
Break-before-make time
VNC = VNO = 3 V, RL = 300 Ω, VCC = 3.3 V,
CL = 35 pF, see Figure 10
QC
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14
µA
DYNAMIC
(1)
TA = 25°C
1
–40°C ≤ TA ≤ 85°C
ns
ns
ns
0.9
6
pC
All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or
Floating CMOS Inputs (SCBA004).
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Electrical Characteristics: 3-V Supply (continued)
VCC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CNC (OFF),
CNO(OFF)
NC, NO OFF capacitance
VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
3.5
pF
CNC(ON),
CNO(ON)
NC, NO ON capacitance
VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
8.5
pF
CCOM(ON)
COM ON capacitance
VCOM = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
8.5
pF
CI
Digital input capacitance
VI = VCC or GND, f = 1 MHz, see Figure 8
2.5
pF
BW
Bandwidth
RL = 50 Ω, Switch ON, see Figure 11
100
MHz
OISO
OFF isolation
RL = 50 Ω, f = 1 MHz, Switch OFF, see Figure 12
–84
dB
XTALK
Crosstalk
RL = 50 Ω, f = 1 MHz, Switch ON, see Figure 13
–85
dB
THD
Total harmonic distortion
RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15
Positive supply current
VI = VCC or GND, VCC = 3.6 V, Switch ON or OFF
0.09%
SUPPLY
ICC
TA = 25°C
0.01
–40°C ≤ TA ≤ 85°C
0.5
µA
6.7 Electrical Characteristics: 2.5-V Supply
VCC = 2.5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
15
25
UNIT
ANALOG SWITCH
rON
ON-state resistance
VNO or VNC = 1 V, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
ΔrON
ON-state resistance match
between channels
VNO or VNC = 1 V, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5
TA = 25°C
rON(FLAT)
ON-state resistance flatness
0 ≤ (VNO or VNC) ≤ VCC, VCC = 2.25 V,
ICOM = –10 mA, Switch ON, see Figure 5
INC(OFF),
INO(OFF)
VNC or VNO = 1.5 V and VCOM = 0.5 V to 1.5 V, or
VNC or VNO = 1.5 V and VCOM = 1.5 V;
VCC = 2.75 V, Switch OFF, see Figure 6
TA = 25°C
NC, NO OFF leakage current
TA = 25°C
NC, NO ON leakage current
VNC or VNO = 1.5 V and VCOM = 0.5 V to 1.5 V, or
VNC or VNO = 1.5 V and VCOM = 1.5 V;
VCC = 2.75 V, Switch ON, see Figure 7
VNC or VNO = Open, VCOM = 0.5 V or 1.5 V,
VCC = 2.75 V, Switch ON, see Figure 7
TA = 25°C
INC(ON),
INO(ON)
ICOM(ON)
COM ON leakage current
–40°C ≤ TA ≤ 85°C
28
0.06
–40°C ≤ TA ≤ 85°C
0.3
0.3
4
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 85°C
–300
Ω
Ω
Ω
300
pA
–1
1
nA
–300
300
pA
–1
1
nA
–300
300
pA
–40°C ≤ TA ≤ 85°C
–1
1
nA
DIGITAL INPUT (IN) (1)
VIH
Input logic high
–40°C ≤ TA ≤ 85°C
2
5.5
V
VIL
Input logic low
–40°C ≤ TA ≤ 85°C
0
0.4
V
TA = 25°C
–0.05
0.05
–40°C ≤ TA ≤ 85°C
–0.05
0.05
IIH, IIL
Input leakage current
VI = 5.5 V or 0 V, VCC = 2.75 V
µA
tON
Turnon time
VCOM = 2 V, RL = 300 Ω,
CL = 35 pF, see Figure 9
tOFF
Turnoff time
VCOM = 2 V, RL = 300 Ω,
CL = 35 pF, see Figure 9
tBBM
Break-before-make time
VNC = VNO = 2 V, RL = 300 Ω, CL = 35 pF, see
Figure 10
QC
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF, see Figure 14
4.5
pC
CNC (OFF),
CNO(OFF)
NC, NO OFF capacitance
VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
3.5
pF
CNC(ON),
CNO(ON)
NC, NO ON capacitance
VNC or VNO = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
8.5
pF
DYNAMIC
(1)
6
VCC = 2.5 V, TA = 25°C
18
2.25 V ≤ VCC ≤ 2.75 V,
–40°C ≤ TA ≤ 85°C
20
VCC = 2.5 V, TA = 25°C
8
2.25 V ≤ VCC ≤ 2.75 V,
–40°C ≤ TA ≤ 85°C
9.5
TA = 25°C
–40°C ≤ TA ≤ 85°C
1
ns
ns
ns
0.9
All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or
Floating CMOS Inputs (SCBA004).
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Electrical Characteristics: 2.5-V Supply (continued)
VCC = 2.5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CCOM(ON)
COM ON capacitance
VCOM = VCC or GND, f = 1 MHz, Switch OFF, see Figure 8
8.5
Ci
Digital input capacitance
VI = VCC or GND, f = 1 MHz, see Figure 8
2.5
pF
pF
BW
Bandwidth
RL = 50 Ω, Switch ON, see Figure 11
100
MHz
OISO
OFF isolation
RL = 50 Ω, f = 1 MHz, Switch OFF, see Figure 12
–84
dB
XTALK
Crosstalk
RL = 50 Ω, f = 1 MHz, Switch ON, see Figure 13
–84
dB
THD
Total harmonic distortion
RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 15
Positive supply current
VI = VCC or GND, VCC = 2.75 V, Switch ON or OFF
0.15%
SUPPLY
ICC
TA = 25°C
0.01
–40°C ≤ TA ≤ 85°C
0.5
µA
6.8 Typical Characteristics
14
V = 2.5 V
+
10
8
Gain (dB)
On-state Resistance (W)
12
V = 3.3 V
+
6
4
V =5V
+
2
0
0
1
2
3
4
5
6
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
100.00E+3
1.00E+6
10.00E+6
VCOM (V)
100.00E+6
1.00E+9
Frequency (Hz)
Figure 2. Bandwidth (VCC = 3 V)
Figure 1. rON vs VCOM
0.1
20
0.09
0
INS
0.08
THD (%)
Gain (dB)
-20
-40
-60
-120
100.0E+3
0.06
0.05
-80
-100
0.07
CRO
0.04
0.03
1.0E+6
10.0E+6
100.0E+6
1.0E+9
10.0E+0
100.0E+0
1.0E+3
10.0E+3
100.0E+3
Frequency (Hz)
Frequency (Hz)
Figure 3. Crosstalk and Insertion Loss
vs Frequency (VCC = 3 V)
Figure 4. Total Harmonic Distortion vs Frequency
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7 Parameter Measurement Information
VCC
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r ON =
IN
VIN
ICOM
VCOM – VNO or VNC
I COM
VIN = VIH or VIL
+
GND
Figure 5. ON-State Resistance
VCC
VNC NC
+
COM
VCOM
+
VNO NO
IN
VIN
OFF-State Leakage Current
Channel OFF
VIN = VIH or VIL
+
GND
INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF)
Figure 6. OFF-State Leakage Current
VCC
VNC NC
+
COM
VNO NO
VIN
VCOM
ON-State Leakage Current
Channel ON
VIN = VIH or VIL
IN
+
GND
ICOM(ON), INC(ON), INO(ON)
Figure 7. ON-State Leakage Current
8
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Parameter Measurement Information (continued)
VCC
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = VCC or GND
VIN = VCC or GND
VCOM COM
VBIAS
VIN
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
Figure 8. Capacitance
VCC
VCOM
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
VCOM
tON
50 W
35 pF
VCC
tOFF
50 W
35 pF
VCC
COM
RL
IN
VIN
CL(2)
Logic
Input (1)
GND
RL
VCC
Logic
Input
(VIN)
50%
50%
0
tON
Switch
Output
(VNC or VNO)
(1)
(2)
tOFF
90%
90%
All input pulses are supplied by generators having the following characteristics:
•
PRR ≤ 10 MHz
•
ZO = 50 Ω
•
tr < 5 ns
•
tf < 5 ns
CL includes probe and jig capacitance.
Figure 9. Turnon and Turnoff Time
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Parameter Measurement Information (continued)
VCC
NC or NO
VCC
Logic
Input
(VIN)
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
IN
VIN
(2)
Switch
Output
(VCOM)
90%
90%
tBBM
Logic
Input(1)
(1)
RL
VNC or VNO = VCC
RL = 50 W
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics:
•
PRR ≤ 10 MHz
•
ZO = 50 Ω
•
tr < 5 ns
•
tf < 5 ns
CL includes probe and jig capacitance.
Figure 10. Break-Before-Make Time
VCC
Network Analyzer
50 W
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VIN = VCC or GND
NO
Network Analyzer Setup
IN
VIN
50 W
+
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 11. Bandwidth
VCC
Network Analyzer
Channel OFF: NC to COM
50 W
VNC
NC
VIN = VCC or GND
COM
Source
Signal
50
VCOM
NO
Network Analyzer Setup
IN
VIN
50 W
+
GND
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 12. OFF Isolation
10
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Parameter Measurement Information (continued)
VCC
Network Analyzer
Channel ON: NC to COM
50 W
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
VIN
50 W
VIN = VCC or GND
NO
Network Analyzer Setup
50
IN
+
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 13. Crosstalk
VCC
RGEN
VGEN
Logic
Input
(VIN)
VIH
ON
OFF
OFF V
IL
NC or NO
COM
+
VCOM
VCOM
NC or NO
DVCOM
CL(2)
VIN
VGEN = 0 to VCC
IN
Logic
Input (1)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × DVCOM
VIN = VIH or VIL
GND
All input pulses are supplied by generators having the following characteristics:
•
PRR ≤ 10 MHz
•
ZO = 50 Ω
•
tr < 5 ns
•
tf < 5 ns
CL includes probe and jig capacitance.
Figure 14. Charge Injection
Channel ON: COM to NC
VSOURCE = VCC P-P
VIN = VIH or VIL
RL = 600 W
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
VCC
VCC
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO
COM
600 W
NC
600 W
VIN
CL(1)
IN
GND
600 W
(1)
CL includes probe and jig capacitance.
Figure 15. Total Harmonic Distortion
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8 Detailed Description
8.1 Overview
The TS5A9411 device is a 1:2 or single-pole-double-throw (SPDT) solid-state analog switch. The TS5A9411, like
all analog switches, is bidirectional. When powered on, each COM pin is connected to the NC pin or NO pin
depending on the status of the IN pin. If IN is low, COM is connected to NC. If IN is high, COM is connected to
NO. The TS5A9411 is a break-before-make switch. This means that during switching, a connection is broken
before a new connection is established. The NC and NO pins are never connected to each other.
8.2 Functional Block Diagram
SPDT
NC
COM
NO
IN
8.3 Feature Description
The low ON-state resistance, ON-state resistance matching, and charge injection in the TS5A9411 make this
switch an excellent choice for analog signals that require minimal distortion. The 2.25-V to 5.5-V operation allows
compatibility with more voltage nodes, and the bidirectional I/Os can pass analog signals from 0 V to VCC with
low distortion.
8.4 Device Functional Modes
Table 1 lists the functional modes of the TS5A9411. If IN pin is low, COM is connected to NC. If IN is high, COM
is connected to NO.
Table 1. Function Table
IN
12
NC TO COM, COM TO NC
NO TO COM, COM TO NO
L
ON
OFF
H
OFF
ON
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs. The
device is used in systems where multiple analog or digital signals must be selected to pass across a single line.
9.2 Typical Application
5V
0.1 µF
0.1 µF
System
VCC
SPDT switch
Digital
Control
IN
Signal
Path
COM
NO
Device 1
NC
Device 2
GND
Figure 16. Typical Application Diagram
9.2.1 Design Requirements
Pull the digitally controlled input select pin (IN) to VCC or GND to avoid unwanted switch states that could result if
the logic control pin is left floating.
9.2.2 Detailed Design Procedure
Select the appropriate supply voltage to cover the entire voltage swing of the signal passing through the switch
because the input or output signal swing of the device is dependant of the supply voltage (VCC).
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Typical Application (continued)
9.2.3 Application Curve
14
On-state Resistance (W)
12
V = 2.5 V
+
10
8
V = 3.3 V
+
6
4
V =5V
+
2
0
0
1
2
3
4
5
6
VCOM (V)
Figure 17. rON vs VCOM
10 Power Supply Recommendations
Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum
ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always
sequence VCC on first, followed by NO, NC, or COM pins.
Although it is not required, power-supply bypassing improves noise margin and prevents switching noise
propagation from the VCC supply to other components. A 0.1-µF capacitor, connected from VCC to GND, is
adequate for most applications.
11 Layout
11.1 Layout Guidelines
TI recommends placing a bypass capacitor as close to the supply pins (VCC and –VCC) as possible to help
smooth out lower frequency noise to provide better load regulation across the frequency spectrum. Minimize
trace lengths and vias on the signal paths to preserve signal integrity.
11.2 Layout Example
To system controller
IN
To device 1
NO
Via to power plane
VCC
COM
GND
NC
To common signal path
Via to ground plane
To device 2
Figure 18. Layout Recommendation
14
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Device Nomenclature
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below
the DC gain.
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF.
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF.
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON.
CI
Capacitance of control input (IN).
ICC
Static power-supply current with the control (IN) pin at VCC or GND.
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM
to NC) in the ON state and the output (NC or NO) open.
ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition (VCC = 0).
IIH, IIL
Leakage current measured at the control input (IN).
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF
state under worst-case input and output conditions.
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON
state and the output (COM) open.
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the
OFF state under worst-case input and output conditions.
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON
state and the output (COM) open.
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in
dB in a specific frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF
state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the
analog (NC, NO, or COM) output. This is measured in coulomb (C) and measured by the total
charge induced due to switching of the control input. Charge injection, QC = CL × ΔVCOM, CL is the
load capacitance and ΔVCOM is the change in analog output voltage.
ΔrON
Difference of rON between channels in a specific device.
rON
Resistance between COM and NC or COM and NO ports when the channel is ON.
rON(FLAT)
Difference of rON in a channel over the specified range of conditions.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and
by the propagation delay between the output of two adjacent analog channels (NC and NO) when
the control signal changes state.
tOFF
Turnoff time for the switch. This parameter is measured under the specified range of conditions and
by the propagation delay between the digital control (IN) signal and analog output (COM, NC, or
NO) signal when the switch is turning OFF.
tON
Turnon time for the switch. This parameter is measured under the specified range of conditions and
by the propagation delay between the digital control (IN) signal and analog output (COM, NC, or
NO) signal when the switch is turning ON.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is
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Device Support (continued)
defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to
the absolute magnitude of the fundamental harmonic.
VCOM
Voltage at COM.
VI
Voltage at the control input (IN).
VIH
Minimum input voltage for logic high for the control input (IN).
VIL
Maximum input voltage for logic low for the control input (IN).
VNC
Voltage at NC.
VNO
Voltage at NO.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel
(NC to NO or NO to NC). This is measured in a specific frequency and in dB.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
Implications of Slow or Floating CMOS Inputs (SCBA004)
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
16
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A9411DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(32F, 32R)
(32H, 32P)
TS5A9411DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(32F, 32R)
32H
TS5A9411DCKTG4
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(32F, 32R)
32H
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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