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TS5N214PWG4

TS5N214PWG4

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TSSOP16

  • 描述:

    IC MUX/DEMUX 2 X 1:4 16TSSOP

  • 数据手册
  • 价格&库存
TS5N214PWG4 数据手册
TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 FEATURES • • • • • • • • DBQ OR PW PACKAGE (TOP VIEW) Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) 0- to 10-V Switching on Data I/O Ports Bidirectional Data Flow With Near-Zero Propagation Delay Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port) VCC Operating Range From 4.75 V to 5.25 V Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating 1OE S1 1B4 1B3 1B2 1B1 1A GND 1 16 2 15 3 14 4 13 5 12 6 7 11 10 8 9 VCC 2OE S0 2B4 2B3 2B2 2B1 2A XXXXXX DESCRIPTION/ORDERING INFORMATION The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. ORDERING INFORMATION PACKAGE (1) TA –40°C to 85°C (1) ORDERABLE PART NUMBER TOP-SIDE MARKING SSOP (QSOP) – DBQ Tape and reel TS5N214DBQR YB214 TSSOP – PW Tape and reel TS5N214PWR YB214 Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005, Texas Instruments Incorporated TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 FUNCTION TABLE (EACH MULTIPLEXER/DEMULTIPLEXER) INPUTS OE S1 S0 INPUT/OUTPUT A FUNCTION L L L B1 A port = B1 port L L H B2 A port = B2 port L H L B3 A port = B3 port L H H B4 A port = B4 port H X X Z Disconnect LOGIC DIAGRAM (POSITIVE LOGIC) 7 1A 6 SW 5 SW 1B1 1B2 4 SW 1B3 3 1B4 SW 9 2A 10 2B1 SW 11 SW 2B2 12 2B3 SW 13 SW 14 S0 2 S1 1 1OE 2OE 2 15 2B4 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW) A B VCC Charge Pump EN(1) (1) EN is the internal enable signal applied to the switch. Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range –0.5 7 V VIN Control input voltage range (2) (3) –0.5 7 V VI/O Switch I/O voltage range (2) (3) (4) –0.5 11 V II/O ON-state switch current (5) Continuous current through VCC or GND θJA Package thermal impedance (6) Tstg Storage temperature range (1) (2) (3) (4) (5) (6) ±100 mA ±100 mA DBQ package 90 PW package 108 –65 150 °C/W °C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to ground, unless otherwise specified. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. VI and VO are used to denote specific conditions for VI/O. II and IO are used to denote specific conditions for II/O. The package thermal impedance is calculated in accordance with JESD 51-7. Recommended Operating Conditions (1) MIN MAX UNIT VCC Supply voltage 4.75 5.25 V VIH High-level control input voltage 2 5.25 V VIL Low-level control input voltage 0 0.8 V VI/O Data input/output voltage 0 10 V TA Operating free-air temperature –40 85 °C (1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 3 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) TEST CONDITIONS (1) PARAMETER IIN Control inputs MIN TYP (2) MAX µA VIN = 0 to VCC VCC = 5.25 V, VO = 0 to 10 V, VI = 0, Switch OFF, VIN = VCC or GND 10 VCC = 0 V, VO = Open, VI = 0 to 10 V 10 VCC = 5.25 V, II/O = 0, Switch ON or OFF, VIN = VCC or GND 10 mA VCC = 5 V, VIN = 10 V or 0 10 pF A port VCC = 5 V, Switch OFF, VIN = VCC or GND, VI/O = 10 V or 0 60 B port VCC = 5 V, Switch OFF, VIN = VCC or GND, VI/O = 10 V or 0 20 Cio(ON) VCC = 5 V, Switch ON, VIN = VCC or GND, VI/O = 10 V or 0 100 VCC = 4.75 V, TYP at VCC = 5 V VI = 0 V, IO = 50 mA ron (4) VI = 8 V, IO = –50 mA 7.5 VI = 10 V, IO = –50 mA 12.5 IOZ (3) ICC Cin Control inputs Cio(OFF) (1) (2) (3) (4) 10 UNIT VCC = 5.25 V, µA pF 3 pF 7.5 Ω VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins. All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. For I/O ports, the parameter IOZ includes the I/O leakage current. Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals. Switching Characteristics over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3) FROM (INPUT) TO (OUTPUT) tpd (1) A or B B or A tpd(s) S S OE PARAMETER ten tdis (1) VCC = 5 V ± 0.25 V MIN UNIT MAX 3 ns A 200 ns B 200 A or B 200 S B 200 OE A or B 200 ns ns The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). Dynamic Characteristics over recommended operating free-air temperature range, VCC = 5 V ± 5% (unless otherwise noted) PARAMETER MIN TYP (1) MAX TEST CONDITIONS UNIT RL = 50 Ω, VI = 0.632 V (P-P), See Figure 4 OFF isolation (OISO) RL = 50 Ω, VI = 0.632 V (P-P), f = 25 MHz, See Figure 5 –50 dB RL = 50 Ω, VI = 0.632 V (P-P), f = 25 MHz, See Figure 6 and Figure 7 –50 dB Bandwidth (BW) (2) Crosstalk (XTALK) (1) (2) 4 All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C Bandwidth is the frequency where the gain is –3 dB below the DC gain. 25 MHz TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 TYPICAL PERFORMANCE ron − ON-State Resistance − Ω 6 5 TA = 25°C 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VI − V Figure 1. Typical ron vs VI, VCC - 5 V, and IO = –50 mA 0 0 −1 Phase −20 Gain − dB −3 −4 −30 −5 −40 −6 −50 Phase Margin − Deg −10 Gain −2 −7 −60 −8 −9 0.1 −70 1 10 100 500 f − Frequency − MHz Figure 2. Frequency Response vs Bandwidth 5 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 180 160 140 120 100 80 60 40 20 0 −20 −40 −60 −80 −100 −120 −140 −160 −180 0 −20 Phase Gain − dB −40 −60 Gain −80 −100 −120 0.1 1 10 100 Phase Margin − Deg TYPICAL PERFORMANCE (continued) 500 f − Frequency − MHz 0 −20 Phase Gain − dB −40 −60 Gain −80 −100 −120 0.1 1 10 100 f − Frequency − MHz Figure 4. Frequency Response vs Crosstalk 6 180 160 140 120 100 80 60 40 20 0 −20 −40 −60 −80 −100 −120 −140 −160 −180 500 Phase Margin − Deg Figure 3. Frequency Response vs OFF Isolation TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 PARAMETER MEASUREMENT INFORMATION VCC Input Generator VIN 50 Ω 50 Ω VG1 TEST CIRCUIT DUT 2  VCC Input Generator VI 50 Ω 50 Ω CL (see Note A) RL TEST VCC S1 RL VI CL tpd(s)† 5 V ± 0.25 V Open 100 Ω VCC 35 pF tPLZ/tPZL 5 V ± 0.25 V 2  VCC 100 Ω GND 35 pF 0.3 V tPHZ/tPZH 5 V ± 0.25 V GND 100 Ω VCC 35 pF 0.3 V V∆ tpds is measured with Demux inputs at opposite voltage levels, i.e. VB1 = 5 V, VB2 = GND. VCC Output Control (VIN) VCC/2 VCC VCC/2 VCC/2 0V tPLH VOH Output VCC/2 VCC/2 VOL VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES (tpd(s)) Output Waveform 1 S1 at 2 × VCC (see Note B) tPLZ VOH VCC/2 VOL + V∆ VOL tPZH tPHL VCC/2 0V tPZL Output Control (VIN) Open GND VG2 † S1 RL VO Output Waveform 2 S1 at GND (see Note B) tPHZ VOH VCC/2 VOH − V∆ 0V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 25 ns, tf < 25 ns. D. The outputs are measured one at a time, with one transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). H. All parameters and waveforms are not applicable to all devices. Figure 5. Test Circuit and Voltage Waveforms 7 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 PARAMETER MEASUREMENT INFORMATION (continued) VCC Network Analyzer 50  B1 Channel ON: B1 to A A Source Signal Network Analyzer Setup B2−B4 Source Power = 0 dBM (632-mV P-P at 50- load) GND DC Bias = 350 mV 50  Figure 6. Bandwidth (BW) VCC Network Analyzer 50  B1 Channel OFF: B2−B4 to A A Source Signal 50  Network Analyzer Setup B2−B4 Source Power = 0 dBM (632-mV P-P at 50- load) GND 50  DC Bias = 350 mV Figure 7. OFF Isolation (OISO) VCC Network Analyzer 50  B1 Channel ON: B1 to A A Source Signal Channel OFF: B2−B4 to A B2−B4 Network Analyzer Setup 50  50  GND Source Power = 0 dBM (632-mV P-P at 50- load) DC Bias = 350 mV Figure 8. Crosstalk (XTALK) 8 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 PARAMETER MEASUREMENT INFORMATION (continued) V+ Network Analyzer 50  Channel ON: 1B1 to 1A, 2B1 to 2A 1B1 1A Source Signal Network Analyzer Setup 2B1 50  2A 50  Source Power = 0 dBM (632 mV P-P at 50  load) DC Bias = 350 mV GND Figure 9. Adjacent Channel Crosstalk (XTALK) 9 TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 MECHANICAL DATA DBQ (R–PDSO–G**) PLASTIC SMALL-OUTLINE PACKAGE 0.012 (0,30) 0.008 (0,20) 0.025 (0,64) 24 0.005 (0,13) 13 0.157 (3,99) 0.150 (3,81) 0.244 (6,20) 0.228 (5,80) 0.008 (0,20) NOM Gauge Plane 1 12 A 0.010 (0,25) 0°−8° 0.035 (0,89) 0.016 (0,40) 0.069 (1,75) MAX Seating Plane 0.010 (0,25) 0.004 (0,10) 0.004 (0,10) PINS ** 16 20 24 28 A MAX 0.197 (5,00) 0.344 (8,74) 0.344 (8,74) 0.394 (10,01) A MIN 0.189 (4,80) 0.337 (8,56) 0.337 (8,56) 0.386 (9,80) M0−137 VARIATION AB AD AE AF DIM D 4073301/F 02/2002 10 A. All linear dimensions are in inches (millimeters). B. This drawing is subject ot change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15). D. Falls within JEDEC MO-137. TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 MECHANICAL DATA (continued) PW (R–PDSO–G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PINS SHOWN 0,30 0,19 0,65 14 0,10 M 8 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 7 0°− 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX 0,10 PINS ** 8 14 16 20 24 28 A MAX 3,10 5,10 5,10 6,60 7,90 9,80 A MIN 2,90 4,90 4,90 6,40 7,70 9,60 DIM 4040064/F 01/97 A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0, 15. D. Falls within JEDEC MO-153 11 PACKAGE OPTION ADDENDUM www.ti.com 13-Aug-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TS5N214DBQR ACTIVE SSOP DBQ 16 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 YB214 TS5N214PW ACTIVE TSSOP PW 16 90 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 YB214 TS5N214PWG4 ACTIVE TSSOP PW 16 90 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 YB214 TS5N214PWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 YB214 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TS5N214PWG4 价格&库存

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