TS5V330C
www.ti.com
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
QUAD SPDT WIDE BANDWIDTH VIDEO SWITCH WITH LOW ON-STATE RESISTANCE
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FEATURES
1
•
•
•
•
•
1
16
VCC
2
15
S2A
3
14
EN
S1D
DA
4
13
S2D
S1B
5
12
DD
S2B
6
11
S1C
DB
7
10
S2C
GND
8
9
DC
RGY PACKAGE
(TOP VIEW)
VCC
•
•
•
IN
S1A
1
16
S1A
2
15
S2A
3
14
EN
S1D
DA
4
13
S2D
S1B
5
12
DD
S2B
6
11
S1C
DB
7
10
S2C
8
9
DC
•
D, DB, DBQ, OR PW PACKAGE
(TOP VIEW)
IN
•
•
•
Low Differential Gain and Phase
(Typical DG = 0.24%, Typical DP = 0.039°)
Wide Bandwidth (Typical BW > 288 MHz)
Low Cross-Talk (Typical XTALK = –87 dB)
Low Power Consumption
(Maximum ICC = 3 μA)
Bidirectional Data Flow, With Near-Zero
Propagation Delay
Low ON-State Resistance (Typical rON = 3 Ω)
VCC Operating Range From 4.5 V to 5.5 V
Ioff Supports Partial-Power-Down Mode
Operation
Data and Control Inputs Provide Undershoot
Clamp Diode
Control Inputs Can be Driven by TTL or
5-V/3.3-V CMOS Outputs
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Suitable for Both RGB and Composite Video
Switching
GND
•
DESCRIPTION/ORDERING INFORMATION
The TS5V330C is a 4-bit 1-of-2 multiplexer/demultiplexer video switch with a single switch-enable (EN) input.
The select (IN) input controls the data path of the multiplexer/demultiplexer. When EN is low, the switch is
enabled and the D port is connected to the S port. When EN is high, the switch is disabled and a high impedance
state exists between the D and S ports.
Low differential gain and phase makes this switch ideal for video applications. The device has a wide bandwidth
and low cross talk which makes it suitable for high frequency video applications. The device can be used for
RGB and composite video switching applications.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging
current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TS5V330C
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
www.ti.com
ORDERING INFORMATION
TA
PACKAGE
QFN – RGY
TOP-SIDE MARKING
TS5V330CRGYR
Tube
TS5V330CD
Tape and reel
TS5V330CDR
SSOP – DB
Tape and reel
TS5V330CDBR
TE330C
SSOP (QSOP) – DBQ
Tape and reel
TS5V330CDBQR
TE330C
Tube
TS5V330CPW
Tape and reel
TS5V330CPWR
TSSOP – PW
(1)
(2)
ORDERABLE PART NUMBER
Tape and reel
SOIC – D
–40°C to 85°C
(1) (2)
TE330C
TS5V330C
TE330C
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
Table 1. FUNCTION TABLE
INPUTS
EN
IN
INPUT/OUTPUT
A
FUNCTION
L
L
S1
D port = S1 port
L
H
S2
D port = S2 port
H
X
Z
Disconnect
Table 2. PIN DESCRIPTIONS
PIN NAME
2
DESCRIPTION
S1, S2
Analog video I/Os
D
Analog video I/Os
IN
Select input
EN
Switch-enable input
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SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
PARAMETER DEFINITIONS
PARAMETER
DESCRIPTION
rON
Resistance between the D and S ports with the switch in the ON-state
IOZ
Output leakage current measured at the D and S ports with the switch in the OFF-state
IOS
Short circuit current measured at the I/O pins.
VIN
Voltage at the IN pin
VEN
Voltage at the EN pin
CIN
Capacitance at the control inputs (EN, IN)
COFF
Capacitance at the analog I/O port when the switch is OFF
CON
Capacitance at the analog I/O port when the switch is ON
VIH
Minimum input voltage for logic high for the control inputs (EN, IN)
VIL
Minimum input voltage for logic low for the control inputs (EN, IN)
VH
Hysteresis voltage at the control inputs (EN, IN)
VIK
I/O and control inputs diode clamp voltage (EN, IN)
VI
Voltage applied to the D or S pins when D or S is the switch input.
VO
Voltage applied to the D or S pins when D or S is the switch output.
IIH
Input high leakage current of the control inputs (EN, IN)
IIL
Input low leakage current of the control inputs (EN, IN)
II
Current into the D or S pins when D or S is the switch input.
IO
Current into the D or S pins when D or S is the switch output.
Ioff
Output leakage current measured at the D and S ports with VCC = 0
tON
Propagation delay measured between 50% of the digital input to 90% of the analog output when switch is turned
ON.
tOFF
Propagation delay measured between 50% of the digital input to 90% of the analog output when switch is turned
OFF.
BW
Frequency response of the switch in the ON-state measured at –3 dB
XTALK
Unwanted signal coupled from channel to channel. Measured in –dB. XTALK = 20 LOG VOUT/VIN. This is a
non-adjacent crosstalk.
OIRR
Off-isolation is the resistance (measured in –dB) between the input and output with the switch OFF.
DG
Magnitude variation between analog input and output pins when the switch is ON and the DC offset of composite
video signal varies at the analog input pin. In NTSC standard the frequency of the video signal is 3.58 MHz and
DC offset is from 0 to 0.714 V.
DP
Phase variation between analog input and output pins when the switch is ON and the DC offset of composite
video signal varies at the analog input pin. In NTSC standard the frequency of the video signal is 3.58 MHz and
DC offset is from 0 to 0.714 V.
ICC
Static power supply current
ICCD
Variation of ICC for a change in frequency in the control inputs (EN, IN)
ΔICC
This is the increase in supply current for each control input that is at the specified voltage level, rather than VCC or
GND.
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TS5V330C
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
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LOGIC DIAGRAM (POSITIVE LOGIC)
4
2
DA
S1A
3
S2A
7
5
DB
S1B
6
S2B
9
11
DC
S1C
10
S2C
DD
12
14
13
S1D
S2D
1
IN
15
EN
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
–0.5
7
V
–0.5
7
V
–0.5
7
V
VCC
Supply voltage range
VIN
Control input voltage range (2)
VI/O
Output voltage range (2)
IIK
Control input clamp current
VIN < 0
–50
mA
II/OK
I/O port clamp current
VI/O < 0
–50
mA
II/O
ON-state switch current (5)
±128
mA
±100
mA
150
°C
(3)
(3) (4)
Continuous current through VCCor GND
Tstg
(1)
(2)
(3)
(4)
(5)
4
Storage temperature range
–65
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
VI and VO are used to denote specific conditions for VI/O.
II and IO are used to denote specific conditions for II/O.
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TS5V330C
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SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
PACKAGE THERMAL IMPEDANCE
over operating free-air temperature range (unless otherwise noted)
UNIT
θJA
Package thermal impedance
D package (1)
73
DB package (1)
82
DBQ package (1)
90
PW package
(1)
108
RGY package (2)
(1)
(2)
°C/W
39
The package thermal impedance is calculated in accordance with JESD 51-7.
The package thermal impedance is calculated in accordance with JESD 51-5.
RECOMMENDED OPERATING CONDITIONS (1)
MIN
MAX
UNIT
VCC
Supply voltage
4
5.5
V
VIH
High-level control input voltage (EN, IN)
2
5.5
V
VIL
Low-level control input voltage (EN, IN)
0
0.8
V
VANALOG
Analog input/output voltage
0
Vcc
V
TA
Operating free-air temperature
–40
85
°C
(1)
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5V330C
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
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ELECTRICAL CHARACTERISTICS (1)
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN TYP (2)
TEST CONDITIONS
VIK
EN, IN
VH
EN, IN
IIH
EN, IN
VCC = 5.5 V,
EN, IN
UNIT
V
400
mV
VIN and VEN = VCC
±1
μA
VCC = 5.5 V,
VIN and VEN = GND
±1
μA
VCC = 5.5 V,
VO = 0 to 5.5 V,
VI = 0,
Switch OFF
±10
μA
IOS
VCC = 5.5 V,
VO = 0 to 5.5 V,
VI = 0,
Switch ON
±110
mA
Ioff
VCC = 0,
VO = 0 to 5.5 V,
VI = 0
±1
μA
ICC
VCC = 5.5 V,
II/O = 0,
Switch ON or OFF
3
μA
VCC = 5.5 V,
One input at 3.4 V,
Other inputs at VCC or GND
IOZ
(3)
ΔICC
EN, IN
ICCD
Cin
EN, IN
D port
COFF
S port
CON
rON
(1)
(2)
(3)
(4)
VCC = 5.5 V,
VEN = GND,
D and S ports are open,
VIN or VEN = 0
f = 1 MHz
3.5
Switch OFF,
8.5
VI/O = 3 V or 0,
VI = 0,
(4)
IIN = –18 mA
MAX
–1.8
IIL
VCC = 4.5 V,
VIN switching 50% duty cycle
VIN = VCC or GND
Switch ON,
mA
0.25
mA/
MHz
pF
pF
5.5
f = 1 MHz, outputs open, Switch ON
VCC = 4.5 V
2.5
16.5
pF
VI = 1 V,
IO = 13 mA, RL = 75 Ω
3
7
VI = 2 V,
IO = 26 mA, RL = 75 Ω
3
10
Ω
VI , VO, II, and IO refer to the I/O pins.
All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C.
For I/O ports, the parameter IOZ includes the input leakage current.
Measured by the voltage drop between the D and S terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (S or D) terminals.
SWITCHING CHARACTERISTICS
over recommended operating free-air temperature range, VCC = 5 V ±10%, RL = 75 Ω, CL = 20 pF (unless otherwise noted)
(see Figure 5)
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
MIN
tON
S
D
1.5
6.0
ns
tOFF
S
D
1.5
5.9
ns
TYP
MAX
UNIT
DYNAMIC CHARACTERISTICS
over recommended operating free-air temperature range, VCC = 5 V ±10% (unless otherwise noted)
PARAMETER
(1)
6
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
DG
RL = 150 Ω, f = 3.58 MHz, see Figure 6
0.24
%
DP
RL = 150 Ω, f = 3.58 MHz, see Figure 6
0.039
°
BW
RL = 150 Ω, see Figure 7
250
MHz
XTALK
RIN = 10 Ω, RL = 150 Ω, f = 10 MHz, see Figure 7
–87
dB
OIRR
RL = 150 Ω, f = 10 MHz, see Figure 7
–54
dB
All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C.
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SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
TYPICAL PERFORMANCE
0
0
-1
0.00
-0.405
-0.410
-0.05
-10
-0.415
-0.10
-2
-4
-40
-5
Differential Gain (%)
-30
Phase (°)
Gain (dB)
-3
-0.15
-0.425
-0.430
-0.20
-0.435
-0.25
Differential Phase (°)
-0.420
-20
-0.440
-0.30
-50
-6
-0.445
Phase at = –3 dB, –35°
Gain at -3 dB , 288 MHz
-7
-60
-8
1
-0.35
10
-0.40
0.0
-70
1000
100
Differential phase at 0.714 V, 0.427°
Differential gain at 0.714 V, 0.24%
0.1
0.2
0.3
0.4
0.5
0.6
VBIAS (V)
0.7
0.8
-0.450
0.9
-0.455
1.0
Frequency (MHz)
Figure 1. Frequency Response
Figure 2. Differential Gain/Phase vs VBIAS
0
160
-10
0
-10
140
-20
200
-20
120
-30
-30
80
-50
60
-60
150
Phase (°)
-40
Crosstalk (dB)
100
Phase (°)
Off Isolation (dB)
250
Phase at 10 MHz, –92.25°
Crosstalk at -10 MHz, –46.99 dB
-40
-50
100
-60
40
-70
Off Isolation at 10 MHz, –54.66 dB
Phase at 10 MHz, 94.7°
-80
-90
1
10
20
0
1000
100
-70
50
-80
-90
1
10
100
Frequency (MHz)
Frequency (MHz)
Figure 3. OFF-Isolation vs Frequency
Figure 4. Crosstalk vs Frequency
0
1000
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TS5V330C
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
www.ti.com
PARAMETER MEASUREMENT INFORMATION
VCC
Input Generator
VIN
IN
50 Ω
50 Ω
VG1
S1 DUT
TEST CIRCUIT
VS1
S2
D
VO
EN
VS2
CL
(see Note A)
RL
TEST
VCC
RL
CL
VS1
V S2
tON
5 V ± 0.5 V
5 V ± 0.5 V
75 Ω
75 Ω
20 pF
20 pF
GND
3V
3V
GND
tOFF
5 V ± 0.5 V
5 V ± 0.5 V
75 Ω
75 Ω
20 pF
20 pF
GND
3V
3V
GND
Output
Control
(VIN)
3V
50%
50%
0V
tON
tOFF
3V
Analog Output
Waveform
(VO)
90%
90%
0V
VOLTAGE WAVEFORMS
tON and tOFF TIMES
A.
CL includes probe and jig capacitance.
B.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω,
tr ≤ 2.5 ns, tf ≤2.5 ns.
C.
The outputs are measured one at a time with one transition per measurement.
Figure 5. Test Circuit and Voltage Waveforms
8
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SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
PARAMETER MEASUREMENT INFORMATION (continued)
Ω
For additional information, refer to the TI application report, Measuring Differential Gain and Phase, literature number
SLOA040.
Figure 6. Test Circuit for Differential Gain/Phase Measurement
The differential gain and phase is measured at the output of the ON channel. For example, when VIN = 0, VEN =
0, and DA is the input, the output is measured at S1A.
HP8753ES Setup
Average = 20
RBW = 300 Hz
Smoothing = 2%
VBIAS = 0 to 1 V
ST = 1.381 s.
P1 = –7 dBM
CW frequency = 3.58 MHz
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TS5V330C
SCDS276B – APRIL 2009 – REVISED DECEMBER 2009
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PARAMETER MEASUREMENT INFORMATION (continued)
Ω
Figure 7. Test Circuit for Frequency Response, Crosstalk, and OFF-Isolation
The frequency response is measured at the output of the ON channel. For example, when VIN = 0, VEN = 0, and
DA is the input, the output is measured at S1A. All unused analog I/O ports are held at VCC or GND.
The crosstalk is measured at the output of the non-adjacent ON channel. For example, when VIN = 0, VEN = 0,
and DA is the input, the output is measured at S1B. All unused analog I/O ports are held at VCC or GND.
The off-isolation is measured at the output of the OFF channel. For example, when VIN = 0, VEN = VCC, and DA is
the input, the output is measured at S1A. All unused analog I/O ports are held at VCC or GND.
HP8753ES Setup
Average = 4
RBW = 3 kHz
Smoothing = 0%
VBIAS = 0.35 V
ST = 2 s
P1 = 0 dBM
10
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5V330CDBQR
ACTIVE
SSOP
DBQ
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TE330C
TS5V330CDR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TS5V330C
TS5V330CPWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TE330C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of