TVS2200DRVR

Product Folder Order Now Support & Community Tools & Software Technical Documents TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 TVS2200 22-V Flat-Clamp Surge Protection Device 1 Features 3 Description • The TVS2200 robustly shunts up to 40 A of IEC 61000-4-5 fault current to protect systems from high power transients or lightning strikes. The device offers a solution to the common industrial signal line EMC requirement to survive up to ±1 kV IEC 610004-5 open circuit voltage coupled through a 42 Ω impedance. The TVS2200 uses a unique feedback mechanism to ensure precise flat clamping during a fault, assuring system exposure below 30 V. The tight voltage regulation allows designers to confidently select system components with a lower voltage tolerance, lowering system costs and complexity without sacrificing robustness. 1 • • • • • • • • Protection Against ±1 kV, 42 Ω IEC 61000-4-5 Surge Test for Industrial Signal Lines Max Clamping Voltage of 28.4 V at 40 A of 8/20 µs Surge Current Standoff Voltage: 22 V Tiny 4 mm2 Footprint Survives Over 5,000 Repetitive Strikes of 35 A 8/20 µs Surge Current at 125°C Robust Surge Protection: – IEC 61000-4-5 (8/20 µs): 40 A – IEC 61643-321 (10/1000 µs): 5 A Low Leakage Current – 3.5 nA Typical at 27°C – 25 nA Typical at 85°C Low Capacitance: 105 pF Integrated Level 4 IEC 61000-4-2 ESD Protection 2 Applications • • • • • Industrial Sensor I/O Medical Equipment USB Type-C Vbus PLC I/O Modules Appliances In addition, the TVS2200 is available in a small 2 mm × 2 mm SON footprint which is designed for space constrained applications, offering a 70 percent reduction in size compared to industry standard SMA and SMB packages. The extremely low device leakage and capacitance ensure a minimal effect on the protected line. To ensure robust protection over the lifetime of the product, TI tests the TVS2200 against 5,000 repetitive surge strikes at high temperature with no shift in device performance. The TVS2200 is part of TI's Flat-Clamp family of surge devices. For more information on the other devices in the family, see the Device Comparison Table. Device Information(1) PART NUMBER TVS2200 PACKAGE SON (6) BODY SIZE (NOM) 2.00 mm × 2.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Voltage Clamp Response to 8/20 µs Surge Event Voltage Footprint Comparison 10 20 30 Time ( s) Traditional TVS TI Flat-Clamp 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 5 7.1 7.2 7.3 7.4 7.5 7.6 7.7 5 5 5 5 5 6 7 Absolute Maximum Ratings ...................................... ESD Ratings - JEDEC .............................................. ESD Ratings - IEC .................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 9 8.1 Overview ................................................................... 9 8.2 Functional Block Diagram ......................................... 9 8.3 Feature Description................................................... 9 8.4 Reliability Testing ...................................................... 9 8.5 Device Functional Modes........................................ 10 9 Application and Implementation ........................ 11 9.1 Application Information............................................ 11 9.2 Typical Application ................................................. 11 10 Power Supply Recommendations ..................... 12 11 Layout................................................................... 13 11.1 Layout Guidelines ................................................. 13 11.2 Layout Example .................................................... 13 12 Device and Documentation Support ................. 14 12.1 12.2 12.3 12.4 12.5 Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 14 14 14 14 14 13 Mechanical, Packaging, and Orderable Information ........................................................... 14 4 Revision History Changes from Original (December 2017) to Revision A • 2 Page Changed product status from Advance Information to Production Data ................................................................................ 1 Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 5 Device Comparison Table Device Vrwm Vclamp at Ipp Ipp (8/20 µs) Vrwm leakage (nA) Package Options Polarity TVS0500 5 9.2 43 0.07 SON Unidirectional TVS1400 14 18.4 43 2 SON Unidirectional TVS1800 18 22.8 40 0.5 SON Unidirectional TVS2200 22 27.7 40 3.2 SON Unidirectional TVS2700 27 32.5 40 1.7 SON Unidirectional TVS3300 33 38 35 19 WCSP, SON Unidirectional Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 3 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com 6 Pin Configuration and Functions DRV Package 6-Pin SON Top View GND 1 GND GND 2 GND 3 6 IN 5 IN 4 IN Pin Functions PIN NAME IN GND 4 No. TYPE 4, 5, 6 I 1, 2, 3, exposed thermal pad GND DESCRIPTION ESD and surge protected channel Ground Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 7 Specifications 7.1 Absolute Maximum Ratings TA = 27°C (unless otherwise noted) (1) MIN Maximum Surge Maximum Forward Surge MAX UNIT IEC 61000-4-5 Current (8/20 µs) 40 A IEC 61000-4-5 Power (8/20 µs) 1120 W IEC 61643-321 Current (10/1000 µs) 5 A IEC 61643-321 Power (10/1000 µs) 145 W IEC 61000-4-5 Current (8/20 µs) 50 A IEC 61000-4-5 Power (8/20 µs) 80 W IEC 61643-321 Current (10/1000 µs) 23 A W IEC 61643-321 Power (10/1000 µs) 60 EFT IEC 61000-4-4 EFT Protection 80 A IBR DC Breakdown current 18 mA IF DC Forward Current 500 mA TA Ambient Operating Temperature -40 125 °C Tstg Storage Temperature -65 150 °C (1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings - JEDEC VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 ESD Ratings - IEC VALUE V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±17 IEC 61000-4-2 air-gap discharge ±30 UNIT kV 7.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) PARAMETER VRWM MIN Reverse Stand-off Voltage NOM 22 MAX UNIT V 7.5 Thermal Information TVS2200 THERMAL METRIC (1) DRV (SON) UNIT 6 PINS RqJA Junction-to-ambient thermal resistance 70.4 °C/W RqJC(top) Junction-to-case (top) thermal resistance 73.7 °C/W RqJB Junction-to-board thermal resistance 40 °C/W YJT Junction-to-top characterization parameter 2.2 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 5 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com Thermal Information (continued) TVS2200 THERMAL METRIC (1) DRV (SON) UNIT 6 PINS YJB Junction-to-board characterization parameter 40.3 °C/W RqJC(bot) Junction-to-case (bottom) thermal resistance 11 °C/W 7.6 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER VRWM TEST CONDITIONS MIN Reverse Stand-off Voltage TYP -0.5 MAX UNIT 22 V Measured at VIN = VRWM TA = 27°C 3.5 62 nA Measured at VIN = VRWM TA = 85°C 25 400 nA ILEAK Leakage Current 80 1300 nA VF Forward Voltage IIN = 1 mA from GND to IO 0.25 0.5 0.65 V VBR Break-down Voltage IIN = 1 mA from IO to GND 24.6 25.9 27.6 V VFCLAMP Forward Clamp Voltage 40 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C 1 2 5 V 24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 27.2 27.7 V 40 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 27.6 28 V 35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = VRWM before surge, TA = 125°C 27.8 28.35 V Measured at VIN = VRWM TA = 105°C VCLAMP Clamp Voltage RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C 30 mΩ CIN Input pin capacitance VIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND 105 pF 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 27°C 2.5 V/µs 0.7 V/µs SR 6 Maximum Slew Rate 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 105°C Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 7.7 Typical Characteristics 45 40 TVS2200 Voltage Surge Current 40 Voltage (V) / Current (A) Voltage (V) / Current (A) 35 30 25 20 15 10 30 25 20 15 10 5 5 0 0 -5 -5 0 10 20 30 Time (Ps) 40 50 60 0 30 40 Time (Ps) 50 60 D002 500 450 450 0 V Bias 11 V Bias 22 V Bias 350 20 Figure 2. Surge Response at 35 A Across Temperature = 400 10 D001 Figure 1. Surge Response at 40 A 400 350 Leakage (nA) Capacitance (pF) -40qC 25qC 105qC 125qC Surge Current (A) 35 300 250 200 300 250 200 150 150 100 100 50 50 0 -40 0 -40 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 -25 -10 110 125 5 20 35 50 65 Temperature (qC) 80 95 110 125 D004 D003 f = 1 MHz, 30 mVpp, IO to GND Figure 3. Capacitance vs Temperature Across Bias Figure 4. Leakage Current vs Temperature at 22 V 0.7 1 0.6 0.5 Voltage (V) Current (mA) 0.5 -40qC 27qC 105qC 125qC 0 0.4 0.3 0.2 -0.5 0.1 -1 -3 0 3 6 9 12 15 Voltage (V) 18 21 24 27 0 -40 -20 D005 Figure 5. IV Across Temperature 0 20 40 60 80 Temperature (°C) 100 120 140 D006 Figure 6. Forward Voltage vs Temperature Across Current Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 7 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com 27 45 26.75 40 26.5 35 30 26.25 IPP (A) Voltage (V) Typical Characteristics (continued) 26 25.75 20 15 25.5 10 25.25 25 -40 25 5 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 110 125 Dynamic Leakage (mA) -25 -10 5 20 35 50 65 Temperature (qC) D007 Figure 7. Breakdown Voltage at 1 mA vs Temperature 8 7.5 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 -40 80 95 110 125 D008 Figure 8. Max Surge Current (8/20 µs) vs Temperature -40qC 25qC 85qC 105qC 125qC 0 0.5 1 1.5 2 Slew Rate (V/Ps) 2.5 3 D009 Figure 9. Maximum Leakage vs Signal Slew Rate across Temperature 8 Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 8 Detailed Description 8.1 Overview The TVS2200 is a precision clamp with a low, flat clamping voltage during transient overvoltage events like surge and protecting the system with zero voltage overshoot. For a detailed overview of the Flat-Clamp family of devices, please reference TI's Flat-Clamp surge protection technology for efficient system protection white paper. This document explains in detail the functional operation of the devices and how they impact and improve system design. 8.2 Functional Block Diagram IN Voltage Level Detection Power FET Driver GND Copyright © 2017, Texas Instruments Incorporated 8.3 Feature Description The TVS2200 is a precision clamp that handles 40 A of IEC 61000-4-5 8/20 µs surge pulse. The flat clamping feature helps keep the clamping voltage very low to keep the downstream circuits from being stressed. The flat clamping feature can also help end-equipment designers save cost by opening up the possibility to use lowercost lower voltage tolerant downstream ICs. The TVS2200 has minimal leakage under the standoff voltage of 22 V, making it an ideal candidate for applications where low leakage and power dissipation is a necessity. IEC 61000-4-2 and IEC 61000-4-4 ratings make it a robust protection solution for ESD and EFT events. Wide ambient temperature range of –40°C to +125°C makes it a good candidate for most applications. Compact packages enable it to be used in small devices and save board area. 8.4 Reliability Testing To ensure device reliability, the TVS2200 is characterized against 5000 repetitive pulses of 35 A IEC 61000-4-5 8/20 µs surge pulses at 125°C. The test is performed with less than 10 seconds between each pulse at high temperature to simulate worst case scenarios for fault regulation. After each surge pulse, the TVS2200 clamping voltage, breakdown voltage, and leakage are recorded to ensure that there is no variation or performance degradation. By ensuring robust, reliable, high temperature protection, the TVS2200 enables fault protection in applications that must withstand years of continuous operation with no performance change. Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 9 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com 8.5 Device Functional Modes 8.5.1 Protection Specifications The TVS2200 is specified according to both the IEC 61000-4-5 and IEC 61643-321 standards. This enables usage in systems regardless of which standard is required in relevant product standards or best matches measured fault conditions. The IEC 61000-4-5 standard requires protection against a pulse with a rise time of 8 µs and a half length of 20 µs while the IEC 61643-321 standard requires protection against a much longer pulse with a rise time of 10 µs and a half length of 1000 µs. The positive and negative surges are imposed to the TVS2200 by a combinational waveform generator (CWG) with a 2-Ω coupling resistor at different peak voltage levels. For powered on transient tests that need power supply bias, inductances are usually used to decouple the transient stress and protect the power supply. The TVS2200 is post tested by guaranteeing that there is no shift in device breakdown or leakage at Vrwm. In addition, the TVS2200 has been tested according to IEC 61000-4-5 to pass a ±1 kV surge test through a 42-Ω coupling resistor and a 0.5 µF capacitor. This test is a common test requirement for industrial signal I/O lines and the TVS2200 will serve an ideal protection solution for applications with that requirement. The TVS2200 also integrates IEC 61000-4-2 Level 4 ESD Protection and 80 A of IEC 61000-4-4 EFT Protection. These combine to ensure that the device can protect against all transient conditions regardless of length or type. For more information on TI's test methods for Surge, ESD, and EFT testing, reference TI's IEC 61000-4-x Testing Application Note. 8.5.2 Minimal Derating Unlike traditional diodes the TVS2200 has very little derating of max power dissipation and ensures robust performance up to 125°C shown in Figure 8. Traditional TVS diodes lose up to 50% of their current carrying capability when at high temperatures, so a surge pulse above 85°C ambient can cause failures that are not seen at room temperature. The TVS2200 prevents this and ensures that you will see the same level of protection regardless of temperature. 8.5.3 Transient Performance During large transient swings, the TVS2200 will begin clamping the input signal to protect downstream conditions. While this prevents damage during fault conditions, it can cause leakage when the intended input signal has a fast slew rate. In order to keep power dissipation low and remove the chance of signal distortion, it is recommended to keep the slew rate of any input signal on the TVS2200 below 2.5 V/µs at room temperature and below 0.7 V/µs at 125°C shown in Figure 9. Faster slew rates will cause the device to clamp the input signal and draw current through the device for a few microseconds, increasing the rise time of the signal. This will not cause any harm to the system or to the device, however if the fast input voltage swings occur regularly it can cause device overheating. 10 Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TVS2200 can be used to protect any power, analog, or digital signal from transient fault conditions caused by the environment or other electrical components. 9.2 Typical Application Figure 10. TVS2200 Application Schematic 9.2.1 Design Requirements A typical operation for the TVS2200 would be protecting a USB Type-C Vbus input, with a nominal input voltage of 20 V and a required withstand of 22 V, shown in Figure 10. In this example, a TVS2200 is protecting the input to a TPS65982 Type-C Port Controller. Without any input protection, if a surge event is caused by lightning, coupling, hot-swap ringing, or any other fault condition this input voltage will rise to hundreds of volts for multiple microseconds, violating the absolute maximum input voltage and harming the device. 9.2.2 Detailed Design Procedure If the TVS2200 is in place to protect the device, during a surge event the voltage will rise to the breakdown of the diode at 25.9 V, and then the TVS2200 will turn on, shunting the surge current to ground. With the low dynamic resistance of the TVS2200, even large amounts of surge current will have minimal impact on the clamping voltage. The dynamic resistance of the TVS2200 is around 30 mΩ, which means 40 A of surge current will cause a voltage raise of 40 A × 30 mΩ = 1.2 V. Because the device turns on at 25.9 V, this means the input will be exposed to a maximum of 25.9 V + 1.2 V = 27.1 V during surge pulses, robustly protecting the USB Type-C port. This pulse is shown in Figure 11 and ensures robust protection of the circuit. Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 11 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com Typical Application (continued) Finally, the small size of the device also improves fault protection by lowering the effect of fault current coupling onto neighboring traces. The small form factor of the TVS2200 allows the device to be placed extremely close to the input connector, lowering the length of the path fault current will take through the system compared to larger protection solutions. 9.2.3 Application Curves 45 TVS2200 Voltage Surge Current Voltage (V) / Current (A) 40 35 30 25 20 15 10 5 0 -5 0 10 20 30 Time (Ps) 40 50 60 D001 Figure 11. TVS2200 Surge Response at 40 A 9.2.4 Configuration Options The TVS2200 can be used in either unidirectional or bidirectional configuration. The TVS2200 shows unidirectional usage to protect an input. By placing two TVS2200's in series with reverse orientation, bidirectional operation can be used which will allow a working voltage of ±22 V. TVS2200 operation in bidirectional will be similar to unidirectional operation, with a minor increase in breakdown voltage and clamping voltage. The TVS3300 bidirectional performance has been characterized in the TVS3300 Configurations Characterization. While the TVS2200 in bidirectional configuration has not specifically been characterized, it will have similar relative changes to the TVS3300 in bidirectional configuration. 10 Power Supply Recommendations The TVS2200 is a clamping device so there is no need to power it. Take care not to violate the recommended VIN voltage range (0 V to 22 V) to ensure the device functions properly. 12 Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 TVS2200 www.ti.com SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 11 Layout 11.1 Layout Guidelines The optimum placement is as close to the connector as possible. EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures. The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector. Route the protected traces as straight as possible. Eliminate any sharp corners on the protected traces between the TVS2200 and the connector by using rounded corners with the largest radii possible. Electric fields tend to build up on corners, increasing EMI coupling. 11.2 Layout Example GND Plane I/O I/O I/O Connector Input Protected Input GND GND GND GND Figure 12. TVS2200 Layout Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 13 TVS2200 SLVSED5A – DECEMBER 2017 – REVISED MARCH 2018 www.ti.com 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14 Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated Product Folder Links: TVS2200 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) TVS2200DRVR ACTIVE Package Type Package Pins Package Drawing Qty WSON DRV 6 3000 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR Op Temp (°C) Device Marking (4/5) -40 to 125 1HVH (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of