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TVS3300
SLVSDO2C – FEBRUARY 2017 – REVISED FEBRUARY 2018
TVS3300 33-V Flat-Clamp Surge Protection Device
1 Features
3 Description
•
The TVS3300 robustly shunts up to 35 A of IEC
61000-4-5 fault current to protect systems from high
power transients or lightning strikes. The device
offers a solution to the common industrial signal line
EMC requirement to survive up to 1 kV IEC 61000-45 open circuit voltage coupled through a 42 Ω
impedance. The TVS3300 uses a unique feedback
mechanism to ensure precise flat clamping during a
fault, assuring system exposure below 40 V. The tight
voltage regulation allows designers to confidently
select system components with a lower voltage
tolerance, lowering system costs and complexity
without sacrificing robustness.
1
•
•
•
•
•
•
•
•
Protection Against 1 kV, 42 Ω IEC 61000-4-5
Surge Test for Industrial Signal Lines
Max Clamping Voltage of 40 V at 35 A of 8/20 µs
Surge Current
Standoff Voltage: 33 V
Tiny 1.1 mm2 WCSP and 4 mm2 SON Footprints
Survives Over 4,000 Repetitive Strikes of 30 A
8/20 µs Surge Current at 125°C
Robust Surge Protection
– IEC61000-4-5 (8/20 µs): 35 A
– IEC61643-321 (10/1000 µs): 4 A
Low Leakage Current
– 19 nA Typical at 27°C
– 28 nA Typical at 85°C
Low Capacitance: 130 pF
Integrated Level 4 IEC 61000-4-2 ESD Protection
2 Applications
•
•
•
•
•
•
•
Industrial Sensors
PLC I/O Modules
24 V Power Lines or Digital Switching Lines
4/20 mA Loops
Appliances
Medical Equipment
Motor Drivers
In addition, the TVS3300 is available in small 1 mm ×
1.1 mm WCSP and 2 mm × 2 mm SON footprints
which are ideal for space constrained applications,
offering up to a 90 percent reduction in size
compared to industry standard SMA and SMB
packages. The extremely low device leakage and
capacitance ensure a minimal effect on the protected
line. To ensure robust protection over the lifetime of
the product, TI tests the TVS3300 against 4000
repetitive surge strikes at high temperature with no
shift in device performance.
The TVS3300 is part of TI's Flat-Clamp family of
surge devices. For more information on the other
devices in the family, see the Device Comparison
Table
Device Information(1)
PART NUMBER
PACKAGE
TVS3300
BODY SIZE (NOM)
WCSP (4)
1.062 mm × 1.116 mm
SON (6)
2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Voltage Clamp Response to 8/20 µs Surge Event
Voltage
Footprint Comparison
10
20
30
Time ( s)
Traditional TVS
TI Flat-Clamp
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TVS3300
SLVSDO2C – FEBRUARY 2017 – REVISED FEBRUARY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
5
7.1
7.2
7.3
7.4
7.5
7.6
7.7
5
5
5
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings - JEDEC ..............................................
ESD Ratings - IEC ....................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ......................................... 9
8.3 Feature Description................................................... 9
8.4 Reliability Testing ...................................................... 9
8.5 Device Functional Modes ......................................... 9
9
Application and Implementation ........................ 11
9.1 Application Information............................................ 11
9.2 Typical Application ................................................. 11
10 Power Supply Recommendations ..................... 12
11 Layout................................................................... 13
11.1 Layout Guidelines ................................................. 13
11.2 Layout Example .................................................... 13
12 Device and Documentation Support ................. 15
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
15
13 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
Changes from Revision B (April 2017) to Revision C
•
Data Sheet revised to match other TVSxx00 family devices ................................................................................................. 1
Changes from Revision A (March 2017) to Revision B
•
Page
Page
Updated standard for (10/1000 μs) from IEC 61000-4-5 to IEC 61643-321 in the Absolute Maximum Ratings table .......... 5
Changes from Original (Feb 2017) to Revision A
Page
•
Added SON package option .................................................................................................................................................. 1
•
Added ±11-kV Contact Discharge (SON) to the Features section ......................................................................................... 1
•
Added Peak pulse—clamping direction specs for SON package in the Absolute Maximum Ratings table........................... 5
•
Added IEC 61000-4-2 contact discharge spec for SON package in the ESD Ratings - IEC table ....................................... 5
•
Added TA = 27°C condition to dynamic resistance in the Electrical Characteristics table ..................................................... 5
2
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5 Device Comparison Table
Device
Vrwm
Vclamp at Ipp
Ipp (8/20 µs)
Vrwm leakage
(nA)
Package Options
Polarity
TVS0500
5
9.2
43
0.07
SON
Unidirectional
TVS1400
14
18.4
43
2
SON
Unidirectional
TVS1800
18
22.8
40
0.5
SON
Unidirectional
TVS2200
22
27.7
40
3.2
SON
Unidirectional
TVS2700
27
32.5
40
1.7
SON
Unidirectional
TVS3300
33
38
35
19
WCSP, SON
Unidirectional
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6 Pin Configuration and Functions
YZF Package
4-Pin WCSP
Top View
1
DRV Package
6-Pin SON
Top View
2
GND 1
A
GND
GND
B
IN
IN
GND 2
GND 3
GND
6
IN
5
IN
4
IN
Pin Functions
PIN
NAME
IN
GND
4
YZF
DRV
TYPE
B1, B2
4, 5, 6
I
A1, A2
1, 2, 3, exposed
thermal pad
GND
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DESCRIPTION
ESD and surge protected channel
Ground
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7 Specifications
7.1 Absolute Maximum Ratings
TA = 27℃ (unless otherwise noted) (1)
MIN
Maximum
Surge
MAX
UNIT
IEC 61000-4-5 Current (8/20 µs)
35
A
IEC 61000-4-5 Power (8/20 µs)
1330
W
IEC 61643-321 Current (10/1000 µs) - WCSP
4
A
IEC 61643-321 Power (10/1000 µs) - WCSP
150
W
IEC 61643-321 Current (10/1000 µs) - DRV
3.5
A
IEC 61643-321 Power (10/1000 µs) - DRV
125
W
IEC 61000-4-5 Current (8/20 µs)
50
A
IEC 61000-4-5 Power (8/20 µs)
80
W
IEC 61643-321 Current (10/1000 µs)
23
A
IEC 61643-321 Power (10/1000 µs)
60
W
EFT
IEC 61000-4-4 EFT Protection
80
A
IBR
DC Breakdown Current - DRV
10
mA
IF
DC Forward Current
500
mA
TA
Ambient Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-65
150
°C
Maximum
Forward Surge
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings - JEDEC
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 ESD Ratings - IEC
VALUE
V(ESD)
Electrostatic discharge
IEC 61000-4-2 contact discharge
±11
IEC 61000-4-2 air-gap discharge
±30
UNIT
kV
7.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VRWM
MIN
NOM
Reverse Stand-off Voltage
MAX
33
UNIT
V
7.5 Thermal Information
TVS3300
THERMAL METRIC
(1)
RqJA
Junction-to-ambient thermal resistance
RqJC(top)
Junction-to-case (top) thermal resistance
(1)
YZF (WCSP)
DRV (SON)
4 PINS
6 PINS
UNIT
173.8
70.4
°C/W
1.7
73.7
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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Thermal Information (continued)
TVS3300
THERMAL METRIC (1)
YZF (WCSP)
DRV (SON)
4 PINS
6 PINS
UNIT
RqJB
Junction-to-board thermal resistance
47.1
40
°C/W
YJT
Junction-to-top characterization parameter
9.5
2.2
°C/W
YJB
Junction-to-board characterization parameter
47.1
40.3
°C/W
RqJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
11
°C/W
7.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Measured at VIN = VRWM, TA = 27°C
TYP
MAX
UNIT
19
150
nA
ILEAK
Leakage Current
28
600
nA
VF
Forward Voltage
IIN = 1 mA from GND to IO
0.25
0.5
0.65
V
VBR
Break-down Voltage
IIN = 1 mA from IO to GND
34
35.8
39
V
VFCLAMP
Forward Clamp Voltage
35 A IEC 61000-4-5 Surge (8/20 µs)
from GND to IO, 27°C
1
2
5
V
15 A IEC 61000-4-5 Surge (8/20 µs)
from IO to GND, VIN = 0 V before surge,
27°C
34
37
40
V
35 A IEC 61000-4-5 Surge (8/20 µs) from
IO to GND, VIN = 0 V before surge, 27°C
34
38
40
V
40
60
mΩ
130
150
pF
VCLAMP
Clamp Voltage
Measured at VIN = VRWM, TA = 85°C
RDYN
8/20 µs surge dynamic resistance
Calculated from VCLAMP at 15 A and 30
A surge current levels, 27°C
CIN
Input pin capacitance
VIN = 12 V, f = 1 MHz, 30 mVpp, IO to
GND
SR
Maximum Slew Rate
0-VRWM rising edge, sweep rise time and
measure slew rate when IPEAK = 1 mA,
27°C
0-VRWM rising edge, sweep rise time and
measure slew rate when IPEAK = 1 mA,
105°C
6
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110
2.5
V/µs
0.7
V/µs
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7.7 Typical Characteristics
40
40
Voltage
Current
Current
Voltage at -40qC
Voltage at 25qC
Voltage at 85qC
35
30
Voltage (V)/Current (A)
Voltage (V) / Current (A)
35
25
20
15
10
30
25
20
15
10
5
5
0
-50x10-6
-40x10-6
-30x10-6
Time (s)
-20x10-6
0
0x100
-10x10-6
180
100x10-9
160
90x10-9
140
80x10-9
120
100
80
Vbias = 5 V
Vbias = 12 V
Vbias = 20 V
Vbias = 25 V
Vbias = 33 V
40
20
0
-40
-20
0
200x10-6
300x10-6
Time (s)
400x10-6
D006
Figure 2. 8/20 µs Surge Response at 35 A Across
Temperature
Leakage Current (A)
Capacitance (pF)
Figure 1. 8/20 µs Surge Response at 35 A
60
100x10-6
D001
70x10-9
60x10-9
50x10-9
40x10-9
30x10-9
20x10-9
10x10-9
20
40
Temperature (qC)
60
80
0x100
-60
100
-40
-20
0
Fig3
20
40
60
Temperature (qC)
80
100
120
D004
f = 1 MHz, 30 mVpp, IO to GND
Figure 3. Capacitance vs Temperature Across Bias
Figure 4. Leakage Current vs Temperature at 33 V
1.5x10-3
0.7
1x10-3
0.6
0.5
Voltage (V)
Current (A)
500x10-6
0x100
-500x10-6
0.4
0.3
0.2
-1x10
-3
TA = -40qC
TA = 25qC
TA = 85qC
-1.5x10-3
-2
3
8
13
18
23
Voltage (V)
28
33
0.1
0
-40
38
-20
D005
Figure 5. I/V Curve Across Temperature
0
20
40
60
80
Temperature (°C)
100
120
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D006
Figure 6. Forward Voltage vs Temperature
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Typical Characteristics (continued)
35
40
36
34.8
32
28
24
Ipp (A)
Voltage (V)
34.6
34.4
20
16
34.2
12
8
34
4
33.8
-60
-40
-20
0
20
40
Temperature (qC)
60
80
0
-40
100
-20
0
20
Fig2
Figure 7. Breakdown Voltage (1 mA) vs Temperature
40
60
80
Temperature (qC)
100
120
140
D016
Figure 8. Max Surge Current (8/20 µs) vs Temperature
100
Leakage (-40qC)
Leakage (25qC)
Leakage (85qC)
Leakage (105qC)
Leakage (125qC)
90
Dynamic Leakage (mA)
80
70
60
50
40
30
20
10
0
0
0.3
0.6
0.9
1.2 1.5 1.8 2.1
Slew Rate (V/Ps)
2.4
2.7
3
D009
Figure 9. Dynamic Leakage vs Signal Slew Rate across Temperature
8
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8 Detailed Description
8.1 Overview
The TVS3300 is a precision clamp with a low, flat clamping voltage during transient overvoltage events like surge
and protecting the system with zero voltage overshoot.
8.2 Functional Block Diagram
IN
Voltage Level
Detection
Power FET
Driver
GND
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8.3 Feature Description
The TVS3300 is a precision clamp that handles 35 A of IEC 61000-4-5 8/20 µs surge pulse. The flat clamping
feature helps keep the clamping voltage very low to keep the downstream circuits from being stressed. The flat
clamping feature can also help end-equipment designers save cost by opening up the possibility to use lowercost, lower voltage tolerant downstream ICs. The TVS3300 has minimal leakage under the standoff voltage of 33
V, making it an ideal candidate for applications where low leakage and power dissipation is a necessity. IEC
61000-4-2 and IEC 61000-4-4 ratings make it a robust protection solution for ESD and EFT events. Wide
ambient temperature range of –40°C to +125°C a good candidate for most applications. Compact packages
enable it to be used in small devices and save board area.
8.4 Reliability Testing
To ensure device reliability, the TVS3300 is characterized against 4000 repetitive pulses of 30 A IEC 61000-4-5
8/20 µs surge pulses at 125°C. The test is performed with less than 10 seconds between each pulse at high
temperature to simulate worst case scenarios for fault regulation. After each surge pulse, the TVS3300 clamping
voltage, breakdown voltage, and leakage are recorded to ensure that their is no variation or performance
degradation. By ensuring robust, reliable, high temperature protection, the TVS3300 enables fault protection in
applications that must withstand years of continuous operation with no performance change.
8.5 Device Functional Modes
8.5.1 Protection Specifications
The TVS3300 is specified according to both the IEC 61000-4-5 and IEC 61643-321 standards. This enables
usage in systems regardless of which standard is required in relevant product standards or best matches
measured fault conditions. The IEC 61000-4-5 standards requires protection against a pulse with a rise time of 8
µs and a half length of 20 µs, while the IEC 61643-321 standard requires protection against a much longer pulse
with a rise time of 10 µs and a half length of 1000 µs.
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Device Functional Modes (continued)
The positive and negative surges are imposed to the TVS3300 by a combinational waveform generator (CWG)
with a 2-Ω coupling resistor at different peak voltage levels. For powered on transient tests that need power
supply bias, inductances are usually used to decouple the transient stress and protect the power supply. The
TVS3300 is post tested by assuring that there is no shift in device breakdown or leakage at Vrwm.
In addition, the TVS3300 has been tested according to IEC 61000-4-5 to pass a ±1 kV surge test through a 42-Ω
coupling resistor and a 0.5 µF capacitor. This test is a common test requirement for industrial signal I/O lines and
the TVS3300 will serve an ideal protection solution for applications with that requirement.
The TVS3300 allow integrates IEC 61000-4-2 level 4 ESD Protection and 80 A of IEC 61000-4-4 EFT Protection.
These combine to ensure that the device can protect against most transient conditions regardless of length or
type.
For more information on TI's test methods for Surge, ESD, and EFT testing, reference TI's IEC 61000-4-x
Testing Application Note
8.5.2 Minimal Derating
Unlike traditional diodes the TVS3300 has very little derating of max power dissipation and ensures robust
performance up to 125°C, shown in Figure 8. Traditional TVS diodes lose up to 50% of their current carrying
capability when at high temperatures, so a surge pulse above 85°C ambient can cause failures that are not seen
at room temperature. The TVS3300 prevents this and ensures that you will see the same level of protection
regardless of temperature.
8.5.3 Transient Performance
During large transient swings, the TVS3300 will begin clamping the input signal to protect downstream
conditions. While this prevents damage during fault conditions, it can cause leakage when the intended input
signal has a fast slew rate. In order to keep power dissipation low and remove the chance of signal distortion, it
is recommended to keep the slew rate of any input signal on the TVS3300 below 2.5 V/µs at room temperature
and below 0.7 V/µs at 125°C shown in Figure 9. Faster slew rates will cause the device to clamp the input signal
and draw current through the device for a few microseconds, increasing the rise time of the signal. This will not
cause any harm to the system or to the device, however if the fast input voltage swings occur regularly it can
cause device overheating.
10
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TVS3300 can be used to protect any power, analog, or digital signal from transient fault conditions caused
by the environment or other electrical components.
9.2 Typical Application
Figure 10. TVS3300 Application Schematic
9.2.1 Design Requirements
A typical operation for the TVS3300 would be protecting an analog output module on a PLC similar to Figure 10.
In this example, the TVS3300 is protecting a 4-20 mA transmitter that uses the XTR115, a standard transmitter
that has a nominal voltage of 24 V and a maximum input voltage of 40 V. Most industrial interfaces such as this
require protection against ±1 kV surge test through a 42-Ω coupling resistor and a 0.5 µF capacitor, equaling
roughly 24 A of surge current. Without any input protection, if a surge event is caused by lightning, coupling,
ringing, or any other fault condition this input voltage will rise to hundreds of volts for multiple microseconds,
violating the absolute maximum input voltage and harming the device. An ideal surge protection diode will
maximize the useable voltage range while still clamping at a safe level for the system, TI's Flat-Clamp technology
provides the best protection solution.
9.2.2 Detailed Design Procedure
If the TVS3300 is in place to protect the device, during a surge event the voltage will rise to the breakdown of the
diode at 35.8 V, and then the TVS3300 will turn on, shunting the surge current to ground. With the low dynamic
resistance of the TVS3300, large amounts of surge current will have minimal impact on the clamping voltage.
The dynamic resistance of the TVS3300 is around 40 mΩ, which means 24 A of surge current will cause a
voltage raise of 24 A × 40 mΩ = 0.96 V. Because the device turns on at 35.8 V, this means the XTR115 input will
be exposed to a maximum of 35.8 V + 0.96 V = 36.76 V during surge pulses, well within the absolute maximum
input voltage. This ensures robust protection of your circuit.
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Typical Application (continued)
The small size of the device also improves fault protection by lowering the effect of fault current coupling onto
neighboring traces. The small form factor of the TVS3300 allows the device to be placed extremely close to the
input connector, lowering the length of the path fault current will take through the system compared to larger
protection solutions.
Finally, the low leakage of the TVS3300 will have low input power losses. At 33 V, the device will see typical 19
nA leakage for a constant power dissipation of less than 100 µW, a small quantity that will minimally effect
overall efficiency metrics and heating concerns.
9.2.3 PLC Surge Protection Reference Design
For a detailed description of the TVS3300 advantages in a PLC Analog Input Module, reference TI's Surge
Protection Reference Design for PLC Analog Input Module This document describes the considerations and
performance of the TVS3300 in a common industrial application.
9.2.4 Configuration Options
The TVS3300 can be used in either unidirectional or bidirectional configuration. By placing two TVS3300's in
series with reverse orientation bidirectional operation can be used, allowing a working voltage of ±33 V. TVS3300
operation in bidirectional will be similar to unidirectional operation, with a minor increase in breakdown voltage
and clamping voltage. The TVS3300 bidirectional performance has been characterized in the TVS3300
Configurations Characterization.
10 Power Supply Recommendations
The TVS3300 is a clamping device so there is no need to power it. To ensure the device functions properly do
not violate the recommended VIN voltage range (0 V to 33 V) .
12
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11 Layout
11.1 Layout Guidelines
The optimum placement is close to the connector. EMI during an ESD event can couple from the trace being
struck to other nearby unprotected traces, resulting in early system failures. The PCB designer must minimize
the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are
between the TVS and the connector.
Route the protected traces straight.
Eliminate any sharp corners on the protected traces between the TVS3300 and the connector by using rounded
corners with the largest radii possible. Electric fields tend to build up on corners, increasing EMI coupling.
11.2 Layout Example
Figure 11. TVS3300 WCSP Layout
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Layout Example (continued)
GND Plane
Protected
Input
I/O
I/O
I/O
Connector
Input
GND
GND
GND
GND
Figure 12. TVS3300 SON Layout
14
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Copyright © 2017–2018, Texas Instruments Incorporated
Product Folder Links: TVS3300
TVS3300
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SLVSDO2C – FEBRUARY 2017 – REVISED FEBRUARY 2018
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• Flat-Clamp TVS Evaluation Kit
• Surge Protection Reference Design for PLC Analog Input Module
• TVS3300 Evaluation Module User's Guide
• TVS3300DRV Evaluation Module User's Guide
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Product Folder Links: TVS3300
15
PACKAGE OPTION ADDENDUM
www.ti.com
28-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TVS3300DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
17JH
TVS3300YZFR
ACTIVE
DSBGA
YZF
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
15K
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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