TWL1200
www.ti.com
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
SDIO, UART, AND AUDIO VOLTAGE-TRANSLATION TRANSCEIVER
Check for Samples: TWL1200
FEATURES
1
•
Level Translator
– VCCA and VCCB Range of 1.1 V to 3.6 V
Seamlessly Bridges 1.8-V/2.6-V
Digital-Switching Compatibility Gap Between
2.6-V processors and TI’s Wi-Link (WL1271
and WL1273)
•
•
•
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2500-V Human-Body Model (A114-B)
– 250-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
YFF PACKAGE
(TOP VIEW)
ZQC PACKAGE
(TOP VIEW)
1
1 2 3 4 5 6 7
A
B
C
D
E
F
G
3
2
4
5
6
7
A
B
C
D
E
F
G
BGA PACKAGE TERMINAL ASSIGNMENTS
1
2
3
4
5
6
7
A
SDIO_CLK(A)
SDIO_CMD(A)
AUDIO_CLK(A)
AUD_DIR
AUDIO_CLK(B)
SDIO_CMD(B)
SDIO_CLK(B)
B
SDIO_DATA3(A)
SDIO_DATA0(A)
AUDIO_F-SYN(A)
C
SDIO_DATA2(A)
SDIO_DATA1(A)
D
WLAN_EN(A)
WLAN_IRQ(A)
E
CLK_REQ(A)
F
G
OE
AUDIO_F-SYN(B)
SDIO_DATA0(B)
SDIO_DATA3(B)
VCCA
VCCB
SDIO_DATA1(B)
SDIO_DATA2(B)
GND
VCCA
VCCB
WLAN_EN(B)
WLAN_IRQ(B)
BT_EN(A)
GND
GND
GND
BT_EN(B)
CLK_REQ(B)
BT_UART_CTS(A)
BT_UART_RTS(A)
AUDIO_IN(A)
SLOW_CLK(B)
AUDIO_IN(B)
BT_UART_RTS(B)
BT_UART_CTS(B)
BT_UART_RX(A)
BT_UART_TX(A)
AUDIO_OUT(A)
SLOW_CLK(A)
AUDIO_OUT(B)
BT_UART_TX(B)
BT_UART_RX(B)
1
2
3
4
5
6
7
A
SDIO_CLK(A)
SDIO_CMD(A)
AUDIO_CLK(A)
AUD_DIR
AUDIO_CLK(B)
SDIO_CMD(B)
SDIO_CLK(B)
B
SDIO_DATA3(A)
SDIO_DATA0(A)
AUDIO_F-SYN(A)
OE
AUDIO_F-SYN(B)
SDIO_DATA0(B)
SDIO_DATA3(B)
C
SDIO_DATA2(A)
SDIO_DATA1(A)
NC (1)
VCCA
VCCB
SDIO_DATA1(B)
SDIO_DATA2(B)
D
WLAN_EN(A)
WLAN_IRQ(A)
GND
VCCA
VCCB
WLAN_EN(B)
WLAN_IRQ(B)
E
CLK_REQ(A)
BT_EN(A)
GND
GND
GND
BT_EN(B)
CLK_REQ(B)
F
BT_UART_CTS(A)
BT_UART_RTS(A)
AUDIO_IN(A)
SLOW_CLK(B)
AUDIO_IN(B)
BT_UART_RTS(B)
BT_UART_CTS(B)
G
BT_UART_RX(A)
BT_UART_TX(A)
AUDIO_OUT(A)
SLOW_CLK(A)
AUDIO_OUT(B)
BT_UART_TX(B)
BT_UART_RX(B)
WCS PACKAGE TERMINAL ASSIGNMENTS
(1)
NC – No internal connection
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
www.ti.com
DESCRIPTION/ORDERING INFORMATION
The TWL1200 is an 19-bit voltage translator specifically designed to seamlessly bridge the 1.8-V/2.6-V
digital-switching compatibility gap between 2.6-V baseband and the TI Wi-Link-6 (WL1271/3). It is optimized for
SDIO, UART, and audio functions. The TWL1200 has two supply-voltage pins, VCCA and VCCB, that can be
operated over the full range of 1.1 V to 3.6 V. The TWL1200 enables system designers to easily interface
applications processors or digital basebands to peripherals operating at a different I/O voltage levels, such as the
TI Wi-Link-6 (WL1271/3) or other SDIO/memory cards.
The TWL1200 is offered in both 48-ball 0.5-mm ball grid array (BGA) and 49-bump 0.4-mm wafer chip scale
package (WCSP) packages. Low static power consumption and small package size make the TWL1200 an ideal
choice for mobile-phone applications.
ORDERING INFORMATION (1)
–40°C to 85°C
(1)
(2)
ORDERABLE
PART NUMBER
PACKAGE (2)
TA
TOP-SIDE MARKING
BGA MicroStar Junior™ – ZQC (Pb-free)
Tape and reel
TWL1200ZQCR
YW200
WCSP ™ – YFF (Pb-free)
Tape and reel
TWL1200YFFR
YW200
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
TERMINAL FUNCTIONS
TERMINAL
2
ZQC
BALL
NO.
YFF
BUMP
NO.
NAME
C4, D4
C4, D4
VCCA
Power
TYPE
DESCRIPTION
A-side supply voltage (1.1 V to 3.6 V)
B2
B2
SDIO_DATA0(A)
I/O
Data bit 1 connected to baseband SDIO controller
C2
C2
SDIO_DATA1(A)
I/O
Data bit 2 connected to baseband SDIO controller
C1
C1
SDIO_DATA2(A)
I/O
Data bit 3 connected to baseband SDIO controller
B1
B1
SDIO_DATA3(A)
I/O
Data bit 4 connected to baseband SDIO controller
A2
A2
SDIO_CMD(A)
I/O
Command bit connected to baseband SDIO controller. Referenced to VCCA.
A6
A6
SDIO_CMD(B)
I/O
Command bit connected to SD/SDIO peripheral. Includes a 15-kΩ pullup resistor
to VCCB.
D3, E3,
E4, E5
D3, E3,
E4, E5
GND
B6
B6
SDIO_DATA0(B)
I/O
Data bit 1 connected to SD/SDIO peripheral
C6
C6
SDIO_DATA1(B)
I/O
Data bit 2 connected to SD/SDIO peripheral
C7
C7
SDIO_DATA2(B)
I/O
Data bit 3 connected to SD/SDIO peripheral
B7
B7
SDIO_DATA3(B)
I/O
Data bit 4 connected to SD/SDIO peripheral
A1
A1
SDIO_CLK(A)
I
Clock signal connected to baseband SDIO controller. Referenced to VCCA.
A7
A7
SDIO_CLK(B)
O
Clock signal connected to SD/SDIO peripheral. Referenced to VCCB; drive
strength = 8 mA
C5, D5
C5, D5
VCCB
Pwr
C3
C3
–
–
No ball (for ZQC) and No-Connect (for YFF)
B4
B4
OE
I
Output enable (active low)
A4
A4
AUD_DIR
I
Direction control signal for AUDIO_CLK and AUDIO_F-SYNC signals
G3
G3
AUDIO_OUT(A)
O
Connected to baseband audio subsystem; drive strength = 4 mA
G5
G5
AUDIO_OUT(B)
I
Connected to Wi-Link-6 PCM subsystem
D1
D1
WLAN_EN(A)
I
Connected to baseband SDIO controller
Ground
B-side supply voltage (1.1 V to 3.6 V)
D6
D6
WLAN_EN(B)
O
Connected to SD/SDIO peripheral; drive strength = 2 mA
G2
G2
BT_UART_TX(A)
O
Connected to baseband UART subsystem; drive strength = 8 mA
G6
G6
BT_UART_TX(B)
I
Connected to BT UART subsystem of Wi-Link-6
D2
D2
WLAN_IRQ(A)
O
Connected to baseband SDIO controller; drive strength = 4 mA
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TWL1200
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
TERMINAL FUNCTIONS (continued)
TERMINAL
ZQC
BALL
NO.
YFF
BUMP
NO.
TYPE
NAME
DESCRIPTION
D7
D7
WLAN_IRQ(B)
I
Connected to SD/SDIO peripheral
G4
G4
SLOW_CLK(A)
I
Low frequency 32-kHz clock connected to baseband device
F4
F4
SLOW_CLK(B)
O
Low frequency 32-kHz clock connected to Wi-Link-6 device; drive strength = 2
mA
G1
G1
BT_UART_RX(A)
I
Connected to baseband UART subsystem
G7
G7
BT_UART_RX(B)
O
Connected to BT UART subsystem of Wi-Link-6; drive strength = 8 mA
E1
E1
CLK_REQ(A)
O
Connected to baseband SDIO controller; drive strength = 4 mA
E7
E7
CLK_REQ(B)
I
Connected to SD/SDIO peripheral
F1
F1
BT_UART_CTS(A)
I
Connected to baseband UART subsystem
F3
F3
AUDIO_IN(A)
I
Connected to baseband audio subsystem
F5
F5
AUDIO_IN(B)
O
Connected to Wi-Link-6 PCM subsystem; drive strength = 4 mA
A3
A3
AUDIO_CLK(A)
I/O
Connected to baseband audio subsystem; drive strength = 4 mA
A5
A5
AUDIO_CLK(B)
I/O
Connected to Wi-Link-6 PCM subsystem; drive strength = 4 mA
E2
E2
BT_EN(A)
I
Connected to baseband UART subsystem
E6
E6
BT_EN(B)
O
Connected to BT UART subsystem of Wi-Link-6; drive strength = 2 mA
F7
F7
BT_UART CTS(B)
O
Connected to BT UART subsystem of Wi-Link-6; drive strength = 4 mA
F2
F2
BT_UART RTS(A)
O
Connected to baseband UART subsystem; drive strength = 4 mA
Connected to BT UART subsystem of Wi-Link-6
F6
F6
BT_UART RTS(B)
I
B3
B3
AUDIO_F-SYN(A)
I/O
Connected to baseband audio subsystem; drive strength = 4 mA
B5
B5
AUDIO_F-SYN(B)
I/O
Connected to Wi-Link-6 PCM subsystem; drive strength = 4 mA
Table 1. FUNCTION TABLE
CONTROL INPUTS
OPERATION
OE
AUD_DIR
H
X
All outputs are Hi-Z
L
H
AUDIO_CLK(A) to AUDIO_CLK(B) and
AUDIO_F-SYNC(A) to AUDIO_F-SYNC(B)
L
L
AUDIO_CLK(B) to AUDIO_CLK(A) and
AUDIO_F-SYNC(B) to AUDIO_F-SYNC(A)
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TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
www.ti.com
LOGIC DIAGRAM
VCCA
VCCB
Control
Logic
OE
BT_EANBLE(A)
BT_EANBLE(B)
BT_UART_RX(A)
BT_UART_RX(B)
BT_UART_CTS(A)
BT_UART_CTS(B)
BT_UART_TX(A)
BT_UART_TX(B)
BT_UART_RTS(A)
BT_UART_RTS(B)
AUDIO_IN(A)
AUDIO_IN(B)
AUDIO_OUT(A)
AUDIO_OUT(B)
SLOW_CLK(A)
SLOW_CLK(B)
Audio
Control
AUD_DIR
AUDIO_CLK(A)
AUDIO_CLK(B)
AUDIO_FSYNC(A)
AUDIO_F_SYNC(B)
VCCA
SDIO Bit
R1
(see Note A)
SDIO-CMD(A)
VCCB
R2
(see Note A)
One-Shot
Translator
Gate Control
One-Shot
SDIO-CMD(B)
One-Shot
Translator
One-Shot
VCCA
SDIO Bit
R1
(see Note A)
SDIO-DATA0(A)
VCCB
R2
(see Note A)
One-Shot
Translator
Gate Control
One-Shot
SDIO-DATA0(B)
One-Shot
Translator
One-Shot
VCCA
SDIO Bit
R1
(see Note A)
SDIO-DATA1(A)
VCCB
R2
(see Note A)
One-Shot
Translator
Gate Control
One-Shot
SDIO-DATA1(B)
One-Shot
Translator
One-Shot
SDIO Bit
VCCA
R1
(see Note A)
SDIO-DATA2(A)
VCCB
R2
(see Note A)
One-Shot
Translator
Gate Control
One-Shot
SDIO-DATA2(B)
One-Shot
Translator
One-Shot
VCCA
SDIO Bit
R1
(see Note A)
SDIO-DATA3(A)
VCCB
R2
(see Note A)
One-Shot
Translator
Gate Control
One-Shot
SDIO-DATA3(B)
One-Shot
Translator
One-Shot
SDIO-CLK(A)
SDIO-CLK(B)
WLAN-ENABLE(A)
4
WLAN-ENABLE(B)
WLAN-IRQ(A)
WLAN-IRQ(B)
CLK-REQ(A)
CLK-REQ(B)
A.
R1 and R2 resistor values are determined based upon the logic level applied to the A port or B port as follows:
R1 and R2 = 25 kΩ when a logic level low is applied to the A port or B port.
R1 and R2 = 4 kΩ when a logic level high is applied to the A port or B port.
R1 and R2 = 70 kΩ when the port is deselected (or in High-Z or 3-state).
B.
OE controls all output buffers. When OE = high, all outputs are Hi-Z.
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TWL1200
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
TYPICAL APPLICATION BLOCK DIAGRAM
1.8 V
2.6 V
Wi-Link-6 (WL1271/3)
Baseband Processor
VCCA
SDIO
Controller
SDIO_DATA0(B)
SDIO_DATA1(A)
SDIO_DATA1(B)
SDIO_DATA2(A)
SDIO_DATA2(B)
SDIO_DATA3(A)
SDIO_DATA3(B)
SDIO_CMD(A)
SDIO_CMD(B)
SDIO_CLK(A)
SDIO_CLK(B)
WLAN_ENABLE(A)
WLAN_ENABLE(B)
WLAN_IRQ(A)
WLAN_IRQ(B)
CLK_REQ(A)
CLK_REQ(B)
BT_ENABLE(A)
UART
Audio
VCCB
SDIO_DATA0(A)
SD/SDIO
Peripheral
BT_ENABLE(B)
TWL1200
BT_UART_RX(A)
BT_UART_RX(B)
BT_UART_CTS(A)
BT_UART_CTS(B)
BT_UART_TX(A)
BT_UART_TX(B)
BT_UART_RTS(A)
BT_UART_RTS(B)
AUDIO_IN(A)
AUDIO_IN(B)
AUDIO_CLK(A)
AUDIO_CLK(B)
AUDIO F-SYNK(A)
AUDIO F-SYNK(B)
AUDIO_OUT(A)
AUDIO_OUT(B)
SLOW_CLK(A)
BT UART
PCM
SLOW_CLK(B)
AUD_DIR (see Note A)
OE (see Note B)
GND
A.
AUD_DIR must be biased to determine audio direction (see Function Table for properly establishing the bias).
B.
OE is an active-low pin that must be grounded to 0 V to enable operation of the TWL1200 device.
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TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
www.ti.com
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VCCA
Supply voltage range
VCCB
Supply voltage range
VI
Input voltage range
MIN
MAX
–0.5
4.6
V
V
–0.5
4.6
I/O ports (A port)
–0.5
4.6
I/O ports (B port)
–0.5
4.6
Control inputs
–0.5
4.6
A port
–0.5
4.6
B port
–0.5
4.6
A port
–0.5
4.6
B port
–0.5
4.6
UNIT
V
VO
Voltage range applied to any output in the high-impedance or power-off
state (2)
VO
Voltage range applied to any output in the high or low state (2)
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
Continuous current through VCCA, VCCB, or GND
Tstg
(1)
(2)
Storage temperature range
–65
V
V
±50
mA
±100
mA
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
THERMAL IMPEDANCE RATINGS
UNIT
θJA
(1)
6
Package thermal impedance (1)
ZQC package
171.6
YFF package
75
°C/W
The package thermal impedance is calculated in accordance with JESD 51-7.
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
RECOMMENDED OPERATING CONDITIONS (1)
MIN
MAX
VCCA
Supply voltage
VCCI
1.1
3.6
V
VCCB
Supply voltage
1.1
3.6
V
VCCI × 0.65
3.6
VCCA × 0.65
3.6
VCCI – 0.2
VCCI
0
VCCI × 0.35
0
VCCA × 0.35
0
0.15
V
V
VIH
High-level input voltage
VIH
High-level input voltage
Low-level input voltage
VIL
Buffer type
VCCO
1.1 V to 3.6 V
1.1 V to 3.6 V
Switch type
1.1 V to 3.6 V
1.1 V to 3.6 V
Buffer type and
Control Logic
1.1 V to 3.6 V
1.1 V to 3.6 V
OE and AUD_DIR
OE and AUD_DIR
VIL
(2)
VI
Low-level input voltage
Output voltage
IOH
1.1 V to 3.6 V
0
3.6
Active state
0
VCCO
3-state
0
3.6
High-level output current
IOL
Low-level output current
Δt/Δv
Input transition rise or fall rate
TA
Operating free-air temperature
(2)
1.1 V to 3.6 V
Input voltage
VO
(1)
Switch type
1.1 V to 1.3 V
–0.5
1.4 V to 1.6 V
–1
1.65 V to 1.95 V
–2
2.3 V to 2.7 V
–4
3 V to 3.6 V
–8
1.1 V to 1.3 V
0.5
1.4 V to 1.6 V
1
1.65 V to 1.95 V
2
2.3 V to 2.7 V
4
3 V to 3.6 V
8
–40
UNIT
V
V
V
V
mA
mA
5
ns/V
85
°C
All unused data inputs of the device must be held at VCCI or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Note, the max VIL value is provided to ensure that a valid VOL is maintained. The VOL value is the VIL + the voltage-drop across the
pass-gate transistor.
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TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
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ELECTRICAL CHARACTERISTICS
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
A port
(Buffer-type output,
8-mA drive)
VOH
A port
(Buffer-type output,
4-mA drive)
VOH
A port
(Switch-type
outputs)
A port
(Buffer-type output,
8-mA drive)
VOL
A port
(Buffer-type output,
4-mA drive)
VOL
A port
(Switch-type
outputs)
B port
(Buffer-type output,
8-mA drive)
VOH
B port
(Buffer-type output,
4-mA drive)
B port
(Buffer-type output,
2-mA drive)
B port
(Switch-type
outputs)
B port
(Buffer-type output,
8-mA drive)
VOL
B port
(Buffer-type output,
4-mA drive)
B port
(Buffer-type output,
2-mA drive)
B port
(Switch-type
outputs)
TEST CONDITIONS
IOH = –100 μA
IOH = –8 mA
IOH = –100 μA
IOH = –4 mA
MIN
1.1 V to 3.6 V
1.1 V to 3.6 V
1.65 V
1.65 V
1.2
2.5 V
2.5 V
1.97
1.1 V to 3.6 V
1.1 V to 3.6 V
1.65 V
1.65 V
1.2
TYP (1) MAX UNIT
VCCO – 0.2
V
VCCO – 0.2
2.5 V
2.5 V
1.97
1.65 V
1.5
2.5 V
2.5 V
2.3
1.1 V to 3.6 V
1.1 V to 3.6 V
0.2
1.65 V
1.65 V
0.45
2.5 V
2.5 V
0.55
1.1 V to 3.6 V
1.1 V to 3.6 V
0.2
1.65 V
1.65 V
0.45
2.5 V
2.5 V
0.55
IOL = 220 μA, VIN = 0.15 V
1.65 V
1.65 V
0.45
IOL = 300 μA, VIN = 0.15 V
2.5 V
2.5 V
0.55
1.1 V to 3.6 V
1.1 V to 3.6 V
1.65 V
1.65 V
1.2
2.5 V
2.5 V
1.97
1.1 V to 3.6 V
1.1 V to 3.6 V
1.65 V
1.65 V
1.2
2.5 V
2.5 V
1.97
1.1 V to 3.6 V
1.1 V to 3.6 V
1.65 V
1.65 V
1.2
2.5 V
2.5 V
1.97
1.65 V
1.65 V
1.5
2.5 V
2.5 V
2.3
1.1 V to 3.6 V
1.1 V to 3.6 V
0.2
1.65 V
1.65 V
0.45
0.55
IOH = –20 μA
IOL = 100 μA
IOL = 8 mA
IOL = 100 μA
IOL = 4 mA
IOH = –100 μA
IOH = –8 mA
IOH = –100 μA
IOH = –4 mA
IOH = –100 μA
IOH = –2 mA
IOH = –20 μA
IOL = 100 μA
IOL = 8 mA
IOL = 100 μA
IOL = 4 mA
IOL = 100 μA
IOL = 2 mA
IOL = 220 μA, VIN = 0.15 V
IOL = 300 μA, VIN = 0.15 V
VI = VCCA or GND
ICCA
Switch-type I/O are open and all
other inputs are biased at either
VCC or GND
8
VCCB
1.65 V
II
(1)
VCCA
V
V
V
VCC0 – 0.2
VCC0 – 0.2
V
VCC0 – 0.2
2.5 V
2.5 V
1.1 V to 3.6 V
1.1 V to 3.6 V
0.2
1.65 V
1.65 V
0.45
2.5 V
2.5 V
0.55
1.1 V to 3.6 V
1.1 V to 3.6 V
0.2
1.65 V
1.65 V
0.45
2.5 V
2.5 V
0.55
1.65 V
1.65 V
0.45
0.55
2.5 V
2.5 V
1.1 V to 3.6 V
1.1 V to 3.6 V
±1
1.1 V to 3.6 V
1.1 V to 3.6 V
15
3.6 V
0V
14
0V
3.6 V
–12
V
μA
μA
All typical values are at TA = 25°C.
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ICCB
Switch-type I/O are open and all
other inputs are biased at either
VCC or GND
ICCA + ICCB
VI = VCCI or GND, IO = 0
Cio
Ci
Co
MIN
TYP (1) MAX UNIT
VCCA
VCCB
1.1 V to 3.6 V
1.1 V to 3.6 V
15
3.6 V
0V
–12
0V
3.6 V
14
1.1 V to 3.6 V
1.1 V to 3.6 V
30
Auto-Dir (SDIO
lines)
VI = VCCI
5.5
Bi-Dir buffer
VI = VCCX or GND
4.5
AUD_DIR / OE
VI = VCCA or GND
4
Buffer
VI = VCCX or GND
4
2-mA buffer
VI = VCCX or GND
5
4-mA buffer
VI = VCCX or GND
5
8-mA buffer
VI = VCCX or GND
6
μA
μA
pF
pF
pF
OUTPUT DRIVE STRENGTH
2 mA
4 mA
8 mA
WLAN_EN(B)
AUDIO_OUT(A)
SDIO_CLK(B)
SLOW_CLK(B)
WLAN_IRQ(A)
BT_UART_TX(A)
CLK_REQ(A)
BT_UART_RX(B)
BT_EN(B)
AUDIO_IN(B)
AUDIO_CLK(A)
BT_UART CTS(B)
BT_UART RTS(A)
AUDIO_F-SYNC(A)
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
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TIMING REQUIREMENTS
VCCA = 2.5 V ± 0.2 V
over recommended operating free-air temperature range (unless otherwise noted)
VCCB = 1.8 V
± 0.15 V
MIN
SDIO_CMD
Data rate
SDIO_CLK
SDIO_DATAx
SDIO_CMD
tW
Pulse duration
SDIO_CLK
SDIO_DATAx
Push-pull driving
60
Open-drain driving
1
Push-pull driving
Push-pull driving
Open-drain driving
Push-pull driving
UNIT
MAX
Mbps
50
MHz
60
Mbps
17
ns
1
μs
10
ns
17
ns
TIMING REQUIREMENTS
VCCA = 3.3 V ± 0.3 V
over recommended operating free-air temperature range (unless otherwise noted)
VCCB = 1.8 V
± 0.15 V
MIN
SDIO_CMD
Data rate
SDIO_CLK
SDIO_DATAx
SDIO_CMD
tW
Pulse duration
SDIO_CLK
SDIO_DATAx
10
Push-pull driving
60
Open-drain driving
1
Push-pull driving
Push-pull driving
Open-drain driving
Push-pull driving
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UNIT
MAX
Mbps
50
MHz
60
Mbps
17
ns
1
μs
10
ns
17
ns
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
SWITCHING CHARACTERISTICS
VCCA = 2.5 V ± 0.2 V
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
SDIO_CMD(A)
SDIO_CMD(B)
TEST CONDITIONS
VCCB = 1.8 V
± 0.15 V
MIN
Push-pull driving
7
Open-drain driving (H-to-L)
1.1
7
Open-drain driving (L-to-H)
30
510
Push-pull driving
SDIO_CMD(B)
tpd
ten
tdis
trA
SDIO_CMD(A)
SDIO_CLK(A)
SDIO_CLK(B)
SDIO_DATAx(A)
SDIO_DATAx(B)
SDIO_DATAx(B)
SDIO_DATAx(A)
Buffered input
2-mA drive strength output
Buffered input
Buffered input
OE
OE
515
1
6.5
1
7
Push-pull driving
Push-pull driving
7
4-mA drive strength output
Push-pull driving
1
7
8-mA drive strength output
Push-pull driving
1
6.5
2-mA drive strength output
Push-pull driving
16
4-mA drive strength output
Push-pull driving
19
8-mA drive strength output
Push-pull driving
18
Switch-type output
Push-pull driving
1
2-mA drive strength output
Push-pull driving
17
4-mA drive strength output
Push-pull driving
16.5
8-mA drive strength output
Push-pull driving
16
Switch-type outputs
Push-pull driving
1
SDIO_CLK(B) rise time
SDIO_CMD(A) fall time
SDIO_DATAx(A) fall time
SDIO_CMD(B) fall time
SDIO_CLK(B) fall time
SDIO_DATAx(B) fall time
tsk(O)
7.5
30
7.6
SDIO_DATAx(B) rise time
tfB
1
Open-drain driving (L-to-H)
1
SDIO_CMD(B) rise time
tfA
Open-drain driving (H-to-L)
Push-pull driving
SDIO_DATAx(A) rise time
trB
7
1
SDIO_CMD(A) rise time
Push-pull driving
1
5
15
420
Push-pull driving
1
4.7
Push-pull driving
1
9.7
Open-drain driving
Open-drain driving
15
420
0.5
6
1
9.7
Push-pull driving
0.7
8.3
Open-drain driving
1.6
8.3
1
8.3
Push-pull driving
Push-pull driving
Push-pull driving
Open-drain driving
Push-pull driving
1
9.9
1.6
10.9
0.5
5.3
1
9.9
SDIO Ch-A to Ch-B skew
Push-pull driving
0.4
SDIO Ch-B to Ch-A skew
Push-pull driving
0.4
SDIO channel-to-clock skew
Push-pull driving
1.3
Push-pull driving
60
SDIO_CMD
Max data rate
SDIO_CLK
SDIO_DATAx
Open-drain driving
Push-pull driving
1
Product Folder Link(s): TWL1200
ns
ns
μs
ns
μs
ns
ns
ns
ns
ns
Mbps
50
MHz
60
Mbps
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UNIT
MAX
11
TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
www.ti.com
SWITCHING CHARACTERISTICS
VCCA = 3.3 V ± 0.3 V
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
SDIO_CMD(A)
SDIO_CMD(B)
TEST CONDITIONS
VCCB = 1.8 V
± 0.15 V
MIN
Push-pull driving
7
Open-drain driving (H-to-L)
1.1
7
Open-drain driving (L-to-H)
30
510
Push-pull driving
SDIO_CMD(B)
tpd
ten
tdis
trA
SDIO_CMD(A)
SDIO_CLK(A)
SDIO_CLK(B)
SDIO_DATAx(A)
SDIO_DATAx(B)
SDIO_DATAx(B)
SDIO_DATAx(A)
Buffered input
2-mA drive strength output
Buffered input
Buffered -nput
OE
OE
6.5
1
7
Push-pull driving
7
4-mA drive strength output
Push-pull driving
1
7
8-mA drive strength output
Push-pull driving
1
6.5
2-mA drive strength output
Push-pull driving
16
4-mA drive strength output
Push-pull driving
19
8-mA drive strength output
Push-pull driving
19
Switch-type output
Push-pull driving
1
2-mA drive strength output
Push-pull driving
17
4-mA drive strength output
Push-pull driving
16
8-mA drive strength output
Push-pull driving
16
Switch-type output
Push-pull driving
1
SDIO_CMD(A) rise time
SDIO_CLK(B) rise time
SDIO_CMD(A) fall time
SDIO_CMD(B) fall time
SDIO_CLK(B) fall time
SDIO_DATAx(B) fall time
Push-pull driving
Open-drain driving
1
420
Push-pull driving
1
4.25
Push-pull driving
1
9.5
Open-drain driving
15
420
0.5
5.9
1
9.6
Push-pull driving
0.7
8.2
Open-drain driving
1.6
8.2
1
8.2
Push-pull driving
Push-pull driving
Push-pull driving
Open-drain driving
Push-pull driving
1
9.2
1.6
10.8
0.5
5.2
1
9.8
Push-pull driving
0.4
SDIO Ch-B to Ch-A skew
Push-pull driving
0.4
SDIO Channel-to-Clock skew
Push-pull driving
1.3
Push-pull driving
60
Max data rate
SDIO_CLK
SDIO_DATAx
Open-drain driving
Push-pull driving
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ns
ns
μs
ns
μs
4.25
15
SDIO Ch-A to Ch-B skew
SDIO_CMD
12
1
7.6
SDIO_DATAx(A) fall time
tsk(O)
515
1
SDIO_DATAx(B) rise time
tfB
7.5
30
Push-pull driving
SDIO_CMD(B) rise time
tfA
1
Open-drain driving (L-to-H)
1
SDIO_DATAx(A) rise time
trB
7
Open-drain driving (H-to-L)
Push-pull driving
UNIT
MAX
1
ns
ns
ns
ns
ns
Mbps
50
MHz
60
Mbps
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TWL1200
TWL1200
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
OPERATING CHARACTERISTICS
TA = 25°C
PARAMETER
Enabled
DATAx and CMD
Disabled
Enabled
Clock
Disabled
Enabled
2-mA buffer
Disabled
Enabled
4-mA buffer
Disabled
Enabled
8-mA buffer
Disabled
Enabled
4-mA I/O
Disabled
TEST CONDITIONS
Cpd input side
Cpd output side
Cpd input side
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
Cpd output side
Cpd input side
VCCA = VCCB
= 1.8 V
VCCA = VCCB
= 2.5 V
18.3
20.3
18.25
19.52
0.8
0.8
0.1
0.1
0.6
0.9
8.8
10.1
0.1
0.1
Cpd output side
0.1
0.1
Cpd input side
0.6
1.0
7.1
7.9
0.1
0.1
Cpd output side
0.1
0.1
Cpd input side
0.6
1.0
7.6
8.6
0.1
0.1
Cpd output side
0.1
0.1
Cpd input side
0.6
1.0
8.8
10.1
0.1
0.1
Cpd output side
Cpd input side
Cpd output side
Cpd input side
Cpd output side
Cpd input side
Cpd output side
Cpd input side
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
Cpd output side
0.1
0.1
Cpd input side
0.6
0.95
8.2
9.1
0.1
0.1
0.1
0.1
Cpd output side
Cpd input side
CL = 0,
f = 10 MHz,
tr = tf = 1 ns
Cpd output side
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UNIT
pF
pF
pF
pF
pF
pF
13
TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
www.ti.com
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.25
0.28
Sw itch Type
V CCA = V CCB = 1.8 V
V IN = 0.15 V
0.24
0.26
0.23
0.25
0.22
0.24
TA = 85°C
TA = 85°C
0.23
0.21
TA = 25°C
V OL (V)
V OL (V)
Sw itch Type
V CCA = V CCB = 2.6 V
V IN = 0.15 V
0.27
0.20
TA = -40°C
0.19
TA = 25°C
0.22
0.21
TA = -40°C
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
0.15
0.15
0
20
40
60
80 100 120 140 160 180 200 220
0
30
60
90
120 150 180 210 240 270 300
IOL (µA)
IOL (µA)
Figure 1.
Figure 2.
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.10
0.09
0.10
2-m A Buffer Type
V CCA = V CCB = 1.8 V
V IN = 0.0 V
0.09
0.08
2-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 0.0 V
0.08
TA = 85°C
0.07
0.07
0.06
0.06
TA = 25°C
V OL (V)
V OL (V)
TA = 85°C
0.05
0.04
0.05
TA = 25°C
0.04
TA = -40°C
0.03
0.03
0.02
0.02
0.01
0.01
0.00
TA = -40°C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.2
IOL (m A)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IOL (m A)
Figure 3.
14
0.4
Figure 4.
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
TYPICAL CHARACTERISTICS (continued)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.15
0.15
4-m A Buffer Type
V CCA = V CCB = 1.8 V
V IN = 0.0 V
0.14
0.13
0.13
0.12
0.12
0.11
0.11
TA = 85°C
0.10
0.10
0.09
V OL (V)
0.09
V OL (V)
4-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 0.0 V
0.14
TA = 25°C
0.08
0.07
TA = 85°C
0.08
0.07
TA = 25°C
0.06
0.06
TA = -40°C
0.05
0.05
0.04
0.04
0.03
0.03
0.02
0.02
0.01
0.01
TA = -40°C
0.00
0.00
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0.0
4.0
0.4
0.8
1.2
1.6
2.4
2.8
3.2
3.6
4.0
7.2
8.0
IOL (m A)
IOL (m A)
Figure 5.
Figure 6.
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.20
0.20
8-m A Buffer Type
V CCA = V CCB = 1.8 V
V IN = 0.0 V
0.18
8-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 0.0 V
0.18
0.16
0.16
0.14
0.14
TA = 85°C
0.12
V OL (V)
0.12
V OL (V)
2.0
TA = 25°C
0.10
0.08
TA = 85°C
0.10
TA = 25°C
0.08
0.06
0.06
TA = -40°C
0.04
0.04
0.02
0.02
0.00
TA = -40°C
0.00
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
7.2
8.0
0.0
0.8
IOL (m A)
1.6
2.4
3.2
4.0
4.8
5.6
6.4
IOL (m A)
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
1.81
1.80
1.79
2.61
Sw itch Type
V CCA = V CCB = 1.8 V
V IN = 1.8 V
2.60
2.59
1.78
2.58
2.57
TA = -40°C
V OH (V)
V OH (V)
1.77
1.76
Sw itch Type
V CCA = V CCB = 2.6 V
V IN = 2.6 V
1.75
2.56
TA = -40°C
2.55
TA = 25°C
TA = 25°C
1.74
2.54
TA = 85°C
1.73
1.72
2.52
1.71
2.51
1.70
-20
-18
-16
-14
-12
TA = 85°C
2.53
-10
-8
-6
-4
-2
2.50
-20
0
-18
-16
-14
-12
IOH (µA)
1.79
-8
-6
Figure 9.
Figure 10.
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
-4
-2
0
2.61
1.81
1.80
-10
IOH (µA)
2-m A Buffer Type
V CCA = V CCB = 1.8 V
V IN = 1.8 V
2.60
2.59
2-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 2.6 V
1.78
2.58
1.77
2.57
TA = -40°C
V OH (V)
V OH (V)
1.76
1.75
TA = 25°C
1.74
1.73
1.72
2.56
TA = 25°C
2.55
2.54
TA = 85°C
TA = 85°C
2.53
1.71
1.70
2.52
1.69
2.51
1.68
-2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
2.50
-2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
IOH (m A)
IOH (m A)
Figure 11.
16
TA = -40°C
Figure 12.
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
TYPICAL CHARACTERISTICS (continued)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
1.81
1.80 4-m A Buffer Type
1.79 V CCA = V CCB = 1.8 V
1.78 V IN = 1.8 V
1.77
1.76
1.75
1.74
TA = -40°C
1.73
1.72
1.71
TA = 25°C
1.70
1.69
TA = 85°C
1.68
1.67
1.66
1.65
1.64
1.63
-4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0
2.61
2.60
2.59
4-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 2.6 V
2.58
2.57
TA = -40°C
2.56
V OH (V)
V OH (V)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
2.55
TA = 25°C
2.54
2.53
TA = 85°C
2.52
2.51
2.50
2.49
2.48
-4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0
IOH (m A)
IOH (m A)
Figure 13.
Figure 14.
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
2.61
1.81
1.79
1.77
8-m A Buffer Type
V CCA = V CCB = 1.8 V
V IN = 1.8 V
2.59
2.57
1.75
2.55
1.73
TA = -40°C
2.53
V OH (V)
V OH (V)
1.71
1.69
1.67
TA = 25°C
TA = -40°C
2.51
TA = 25°C
2.49
1.65
1.63
8-m A Buffer Type
V CCA = V CCB = 2.6 V
V IN = 2.6 V
2.47
TA = 85°C
1.61
TA = 85°C
2.45
1.59
2.43
1.57
1.55
-8.0 -7.2 -6.4 -5.6 -4.8 -4.0 -3.2 -2.4 -1.6 -0.8 0.0
2.41
-8.0 -7.2 -6.4 -5.6 -4.8 -4.0 -3.2 -2.4 -1.6 -0.8 0.0
IOH (m A)
IOH (m A)
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
PROPAGATION DELAY TIME (HIGH TO LOW)
vs
LOAD CAPACITANCE
PROPAGATION DELAY TIME (LOW TO HIGH)
vs
LOAD CAPACITANCE
6
6
Sw itch Type
TA = -40°C
5
5
4
4
t PD(L-H) (ns)
t PD(H-L) (ns)
Sw itch Type
TA = -40°C
V CCA = V CCB = 1.8 V
3
V CCA = V CCB = 1.8 V
3
2
2
V CCA = V CCB = 2.6 V
V CCA = V CCB = 2.6 V
1
1
0
0
0
10
20
30
40
50
0
60
10
20
50
Figure 17.
Figure 18.
PROPAGATION DELAY TIME (HIGH TO LOW)
vs
LOAD CAPACITANCE
PROPAGATION DELAY TIME (LOW TO HIGH)
vs
LOAD CAPACITANCE
6
60
6
Sw itch Type
TA = 25°C
Sw itch Type
TA = 25°C
5
5
4
4
V CCA = V CCB = 1.8 V
t PD(L-H) (ns)
t PD(H-L) (ns)
40
CL (pF)
CL (pF)
3
2
V CCA = V CCB = 1.8 V
3
2
V CCA = V CCB = 2.6 V
V CCA = V CCB = 2.6 V
1
1
0
0
0
10
20
30
40
50
60
0
10
CL (pF)
20
30
40
50
60
CL (pF)
Figure 19.
18
30
Figure 20.
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
TYPICAL CHARACTERISTICS (continued)
PROPAGATION DELAY TIME (HIGH TO LOW)
vs
LOAD CAPACITANCE
PROPAGATION DELAY TIME (LOW TO HIGH)
vs
LOAD CAPACITANCE
6
6
Sw itch Type
TA = 85°C
Sw itch Type
TA = 85°C
5
5
V CCA = V CCB = 1.8 V
4
t PD(L-H) (ns)
t PD(H-L) (ns)
4
3
V CCA = V CCB = 1.8 V
3
2
2
V CCA = V CCB = 2.6 V
V CCA = V CCB = 2.6 V
1
1
0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
CL (pF)
CL (pF)
Figure 21.
Figure 22.
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Typical Application Wiring for TWL1200 When Connecting to the WL1271
Table 2. WL1271+TWL1200 Interface
HOST
(MSM)
20
PIN NAME
BALL
NO.
TYPE
TYPE
BALL
NO.
PIN NAME
VCCA
C4
Power (3.0 V)
Power (1.8 V)
C5
VCCB
WL1271
COB
VCCA
D4
Power (3.0 V)
Power (1.8 V)
D5
VCCB
SDIO_DATA0(A)
B2
I/O ↔
I/O ↔
B6
SDIO_DATA0(B)
K4
SDIO_DATA1(A)
C2
I/O ↔
I/O ↔
C6
SDIO_DATA1(B)
J4
SDIO_DATA2(A)
C1
I/O ↔
I/O ↔
C7
SDIO_DATA2(B)
J3
SDIO_DATA3(A)
B1
I/O ↔
I/O ↔
B7
SDIO_DATA3(B)
J5
SDIO_CMD(A)
A2
I/O ↔
I/O ↔
A6
SDIO_CMD(B)
L3
SDIO_CLK(A)
A1
I→
O→
A7
SDIO_CLK(B)
M3
WLAN_EN(A)
D1
I→
O→
D6
WLAN_EN(B)
J2
WLAN_IRQ(A)
D2
O←
I←
D7
WLAN_IRQ(B)
G4
CLK_REQ(A)
E1
O←
I←
E7
CLK_REQ(B)
F5
G5
BT_EN(A)
E2
I→
BT_UART_RX(A)
G1
I→
O→
E6
BT_EN(B)
O→
G7
BT_UART_RX(B)
BT_UART_CTS(A)
F1
G7
I→
O→
F7
BT_UART_CTS(B)
E11
BT_UART_TX(A)
BT_UART_RTS(A)
G2
O←
I←
G6
BT_UART_TX(B)
G8
F2
O←
I←
F6
BT_UART_RTS(B)
G11
TWL1200
AUDIO_IN(A)
F3
I→
I/O ↔
F5
AUDIO_IN(B)
F6
AUDIO_CLK(A)
A3
I/O ↔
I/O ↔
A5
AUDIO_CLK(B)
F8
AUDIO_F-SYN(A)
B3
I/O ↔
I/O ↔
B5
AUDIO_F-SYN(B)
H11
AUDIO_OUT(A)
G3
O←
I←
G5
AUDIO_OUT(B)
F7
SLOW_CLK(A)
G4
I→
O→
F4
SLOW_CLK(B)
K9
AUD_DIR
A4
I→
GND
D3
GND
OE
B4
active low
E3
GND
E4
GND
E5
GND
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
PARAMETER MEASUREMENT INFORMATION
2 × VCCO
S1
RL
From Output
Under Test
Open
GND
CL
(see Note A)
TEST
S1
tpd
tPLZ/tPZL
tPHZ/tPZH
Open
2 × VCCO
GND
RL
tw
LOAD CIRCUIT FOR
BUFFER-TYPE OUTPUTS
VCCI
VCCI/2
Input
VCCO
CL
RL
VTP
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
15 pF
15 pF
15 pF
2 kΩ
2 kΩ
2 kΩ
0.15 V
0.15 V
0.3 V
VCCI/2
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VCCA
Output
Control
(low-level
enabling)
VCCA/2
VCCA/2
0V
tPLZ
tPZL
VCCI
Input
VCCI/2
VCCI/2
0V
tPLH
Output
tPHL
VOH
VCCO/2
VOL
VCCO/2
VCCO
Output
Waveform 1
S1 at 2 × VCCO
(see Note B)
VCCO/2
VOL + VTP
VOL
tPHZ
tPZH
Output
Waveform 2
S1 at GND
(see Note B)
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
VCCO/2
VOH − VTP
VOH
0V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRRv10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. VCCI is the VCC associated with the input port.
I. VCCO is the VCC associated with the output port.
Figure 23. Push-Pull Buffered Direction Control Load Circuit and Voltage Waveform
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PARAMETER MEASUREMENT INFORMATION (continued)
VCCI
VCCO
VCCI
VCCO
DUT
IN
DUT
IN
OUT
15 pF
OUT
1 MW
15 pF
1 MW
DATA RATE, PULSE DURATION, PROPAGATION DELAY,
OUTPUT RISE AND FALL TIME MEASUREMENT USING
AN OPEN-DRAIN DRIVER
DATA RATE, PULSE DURATION, PROPAGATION DELAY,
OUTPUT RISE AND FALL TIME MEASUREMENT USING
A PUSH-PULL DRIVER
From Output
Under Test
15 pF
1 MW
LOAD CIRCUIT FOR ENABLE/DISABLE TIME MEASUREMENT −
SWITCH-TYPE SDIOs
tw
VCCI
VCCI/2
Input
VCCI/2
0V
VOLTAGE WAVEFORMS
PULSE DURATION
OE
VCCI
Input
VCCI/2
VCCI/2
Input
0V
tPLH
Output
tPHL
VCCO/2
0.9 y VCCO
0.1 y VCCO
tr
VOH
VCCO/2
VOL
tf
Output
ten
tdis
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRRv10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. VCCI is the VCC associated with the input port.
I. VCCO is the VCC associated with the output port.
J. All parameters and waveforms are not applicable to all devices.
Figure 24. Auto-Direction Control Load Circuit and Voltage Waveform
22
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
APPLICATION CIRCUIT EXAMPLES
VCCB
VCCA
C
C
TWL1200
C4
D4
C5
D5
BT_PCM30_DO
BT_PCM_DO
F3
F5
BT_PCM30_CLK
BT_PCM_CLK
A3
A5
BT_PCM30_SYNC
BT_PCM_SYNC
B3
B5
A4
VCCA
VCCA
VCCB
VCCB
AUDIO_IN(A)
AUDIO_IN(B)
CLK_REQ(A)
CLK_REQ(B)
SDIO_CLK(A)
SDIO_CLK(B)
SDIO_CMD(A)
SDIO_CMD(B)
AUDIO_CLK(A)
AUDIO_CLK(B)
SDIO_DATA0(A)
SDIO_DATA1(A)
AUDIO_F-SYN(A) SDIO_DATA2(A)
AUDIO_F-SYN(B) SDIO_DATA3(A)
AUD_DIR
SDIO_DATA0(B)
SDIO_DATA1(B)
SDIO_DATA2(B)
SDIO_DATA3(B)
BT_PCM30_DI
BT_PCM_DI
G3
G5
BT_EN30
BT_EN
E2
E6
BT_EN(A)
BT_EN(B)
BT_UART30_RTS
BT_UART_RTS
F1
F7
BT_UART_CTS(A)
BT_UART_CTS(B)
WLAN_EN(A)
WLAN_EN(B)
BT_IRQ30
BT_UART30_CTS
BT_UART_CTS
F2
F6
BT_UART_RTS(A)
BT_UART_RTS(B)
WLAN_IRQ(A)
WLAN_IRQ(B)
BT_UART30_TXD
BT_UART_TXD
G1
G7
BT_UART30_RXD
BT_UART_RXD
G2
G6
B4
AUDIO_OUT(A)
AUDIO_OUT(B)
SLOW_CLK(A)
SLOW_CLK(B)
E1
E7
A1
A7
A2
A6
B2
C2
C1
B1
B6
C6
C7
B7
G4
F4
D1
D6
D2
D7
WLAN_SDIO30_CLK
WLAN_SDIO_CLK
WLAN_SDIO30_CMD
WLAN_SDIO_CMD
WLAN_SDIO30_D0
WLAN_SDIO30_D1
WLAN_SDIO30_D2
WLAN_SDIO30_D3
WLAN_SDIO_D0
WLAN_SDIO_D1
WLAN_SDIO_D2
WLAN_SDIO_D3
CLK32_COMBO
CLK32_COMBO18
WLAN_EN30
WLAN_EN
WLAN_IRQ30
WLAN_IRQ
BT_UART_RX(A)
BT_UART_RX(B)
BT_UART_TX(A)
BT_UART_TX(B)
OE
GND
GND
GND
GND
D3
E3
E4
E5
R
Figure 25. Application Circuit Example, OE Connection With Audio_CLK and Audio_F-SYNC Channels
Established From B Side to A Side
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TWL1200
SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
VCCB
C
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VCCA
C
TWL1200
C4
D4
C5
D5
BT_PCM30_DO
BT_PCM_DO
F3
F5
BT_PCM30_CLK
BT_PCM_CLK
A3
A5
BT_PCM30_SYNC
BT_PCM_SYNC
B3
B5
VCCA
R
A4
R
VCCA
VCCA
VCCB
VCCB
AUDIO_IN(A)
AUDIO_IN(B)
CLK_REQ(A)
CLK_REQ(B)
SDIO_CLK(A)
SDIO_CLK(B)
SDIO_CMD(A)
SDIO_CMD(B)
AUDIO_CLK(A)
AUDIO_CLK(B)
SDIO_DATA0(A)
SDIO_DATA1(A)
AUDIO_F-SYN(A) SDIO_DATA2(A)
AUDIO_F-SYN(B) SDIO_DATA3(A)
AUD_DIR
SDIO_DATA0(B)
SDIO_DATA1(B)
SDIO_DATA2(B)
SDIO_DATA3(B)
BT_PCM30_DI
BT_PCM_DI
G3
G5
BT_EN30
BT_EN
E2
E6
BT_EN(A)
BT_EN(B)
BT_UART30_RTS
BT_UART_RTS
F1
F7
BT_UART_CTS(A)
BT_UART_CTS(B)
WLAN_EN(A)
WLAN_EN(B)
BT_UART30_CTS
BT_UART_CTS
F2
F6
BT_UART_RTS(A)
BT_UART_RTS(B)
WLAN_IRQ(A)
WLAN_IRQ(B)
BT_UART30_TXD
BT_UART_TXD
G1
G7
BT_UART30_RXD
BT_UART_RXD
G2
G6
B4
BT_WLAN_LEVEL_EN
AUDIO_OUT(A)
AUDIO_OUT(B)
SLOW_CLK(A)
SLOW_CLK(B)
E1
E7
A1
A7
A2
A6
B2
C2
C1
B1
B6
C6
C7
B7
G4
F4
D1
D6
D2
D7
WLAN_SDIO30_CLK
WLAN_SDIO_CLK
WLAN_SDIO30_CMD
WLAN_SDIO_CMD
WLAN_SDIO30_D0
WLAN_SDIO30_D1
WLAN_SDIO30_D2
WLAN_SDIO30_D3
WLAN_SDIO_D0
WLAN_SDIO_D1
WLAN_SDIO_D2
WLAN_SDIO_D3
CLK32_COMBO
CLK32_COMBO18
WLAN_EN30
WLAN_EN
WLAN_IRQ30
WLAN_IRQ
BT_UART_RX(A)
BT_UART_RX(B)
BT_UART_TX(A)
BT_UART_TX(B)
OE
GND
GND
GND
GND
D3
E3
E4
E5
R
VCCA
Figure 26. Application Circuit Example, With Voltage Divider for AUD_DIR Connection
24
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
PRINCIPLES OF OPERATION
Applications
The TWL1200 device has been designed to bridge the digital-switching compatibility gap between two voltage
nodes to successfully interface logic threshold levels between a host processor and the Texas Instruments
Wi-Link-6 WLAN/BT/FM products. It is intended to be used in a point-to-point topology when interfacing these
devices that may or may not be operating at different interface voltages.
Architecture
The BT/UART and PCM/Audio subsystem interfaces consist of a fully-buffered voltage translator design that has
its output transistors to source and sink current optimized for drive strength.
The SDIO lines comprise a semi-buffered auto-direction-sensing based translator architecture (see Figure 27)
that does not require a direction-control signal to control the direction of data flow of the A to B ports (or from B
to A ports).
VCCA
VCCB
R1
One-Shot
T1
One-Shot
T2
R2
Translator
SDIO-DATAx(A)
SDIO-DATAx(B)
Bias
N1
T3
One-Shot
Translator
T4
One-Shot
Figure 27. Architecture of an SDIO Switch-Type Cell
Each of these bidirectional SDIO channels independently determines the direction of data flow without a
direction-control signal. Each I/O pin can be automatically reconfigured as either an input or an output, which is
how this auto-direction feature is realized.
The following two key circuits are employed to facilitate the "switch-type" voltage translation function:
1. Integrated pullup resistors to provide dc-bias and drive capabilities
2. An N-channel pass-gate transistor topology (with a high RON of ~300 Ω) that ties the A-port to the B-port
3. Output one-shot (O.S.) edge-rate accelerator circuitry to detect and accelerate rising edges on the A or B
ports
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For bidirectional voltage translation, pullup resistors are included on the device for dc current sourcing capability.
The VGATE gate bias of the N-channel pass transistor is set at a level that optimizes the switch characteristics for
maximum data rate as well as minimal static supply leakage. Data can flow in either direction without guidance
from a control signal.
The edge-rate acceleration circuitry speeds up the output slew rate by monitoring the input edge for transitions,
helping maintain the data rate through the device.
During a low-to-high signal rising-edge, the O.S. circuits turn on the PMOS transistors (T1, T3) and its associated
driver output resistance of the driver is decreased to approximately 50 Ω to 70 Ω during this acceleration phase
to increase the current drive capability of the driver for approximately 30 ns or 95% of the input edge, whichever
occurs first. This edge-rate acceleration provides high ac drive by bypassing the internal pullup resistors during
the low-to-high transition to speed up the rising-edge signal.
During a high-to-low signal falling-edge, the O.S. circuits turn on the NMOS transistors (T2, T4) and its associated
driver output resistance of the driver is decreased to approximately 50 Ω to 70 Ω during this acceleration phase
to increase the current drive capability of the driver for approximately 30 ns or 95% of the input edge, whichever
occurs first.
To minimize dynamic ICC and the possibility of signal contention, the user should wait for the O.S. circuit to
turn-off before applying a signal in the opposite direction. The worst-case duration is equal to the minimum
pulse-width number provided in the Timing Requirements section of this data sheet.
Once the O.S. is triggered and switched off, both the A and B ports must go to the same state (i.e. both High or
both Low) for the one-shot to trigger again. In a DC state, the output drivers maintain a Low state through the
pass transistor. The output drivers maintain a High through the "smart pullup resistors" that dynamically change
value based on whether a Low or a High is being passed through the SDIO lines, as follows:
• RPU1 and RPU2 values are 25 kΩ when the output is driving a low
• RPU1 and RPU2 values are 4 kΩ when the output is driving a high
• RPU1 and RPU2 values are 70 kΩ when the device is disabled via the OE pin or by pulling the either VCCA or
VCCB to 0 V.
The reason for using these "smart" pullup resistors is to allow the TWL1200 to realize a lower static power
consumption (when the I/Os are low), support lower VOL values for the same size pass-gate transistor, and
improved simultaneous switching performance.
Input Driver Requirements
The continuous dc-current "sinking" capability is determined by the external system-level driver interfaced to the
SDIO pins. Since the high bandwidth of these bidirectional SDIO circuits necessitates the need for a port to
quickly change from an input to an output (and vice-vera), they have a modest dc-current "sourcing" capability of
hundreds of micro-Amps, as determined by the smart pullup resistor values.
The fall time (tfA, tfB) of a signal depends on the edge rate and output impedance of the external device driving
the SDIO I/Os, as well as the capacitive loading on these lines.
Similarly, the tpd and max data rates also depend on the output impedance of the external driver. The values for
tfA, tfB, tpd, and maximum data rates in the data sheet assume that the output impedance of the external driver is
less than 50 Ω.
Output Load Considerations
TI recommends careful PCB layout practices with short PCB trace lengths to avoid excessive capacitive loading
and to ensure that proper O.S. triggering takes place. PCB signal trace-lengths should be kept short enough
such that the round trip delay of any reflection is less than the one-shot duration. This improves signal integrity
by ensuring that any reflection sees a low impedance at the driver. The O.S. circuits have been designed to stay
on for approximately 30 ns. The maximum capacitance of the lumped load that can be driven also depends
directly on the one-shot duration. With very heavy capacitive loads, the one-shot can time-out before the signal is
driven fully to the positive rail. The O.S. duration has been set to best optimize trade-offs between dynamic ICC,
load driving capability, and maximum bit-rate considerations. Both PCB trace length and connectors add to the
capacitance that the TWL1200 SDIO output sees, so it is recommended that this lumped-load capacitance be
considered and kept below 75 pF to avoid O.S. retriggering, bus contention, output signal oscillations, or other
adverse system-level affects.
26
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SCES786A – JUNE 2009 – REVISED NOVEMBER 2009
Package Dimensions
The dimensions for the YFF package are shown in Table 3. See the package drawing at the end of this data
sheet.
Table 3. YFF Package Dimensions
Packaged Device
D
E
TWL1200YFFR
2.76 ± 0.03 mm
2.76 ± 0.03 mm
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PACKAGE OPTION ADDENDUM
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20-Jan-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TWL1200YFFR
ACTIVE
DSBGA
YFF
49
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
YW200
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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