TXS0104ERGYR

Product Folder Order Now Support & Community Tools & Software Technical Documents Reference Design TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications 1 Features 3 Description • • This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65 V to 3.6 V. VCCA must be less than or equal to VCCB. The B port is designed to track VCCB. VCCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. 1 • • • • • • No Direction-Control Signal Needed Max Data Rates – 24 Mbps (Push Pull) – 2 Mbps (Open Drain) Available in the Texas Instruments NanoFree™ Package 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) No Power-Supply Sequencing Required – VCCA or VCCB Can Be Ramped First Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) – B Port – 15-kV Human-Body Model (A114-B) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) IEC 61000-4-2 ESD (B Port) – ±8-kV Contact Discharge – ±10-kV Air-Gap Discharge 2 Applications Handset Smartphone Tablet Desktop PC The TXS0104E is designed so that the OE input circuit is supplied by VCCA. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) TXS0104ED SOIC (14) 8.65 mm × 3.91 mm TXS0104EPW TSSOP (14) 5.00 mm × 4.40 mm TXS0104EZXU BGA (12) 2.00 mm × 2.50 mm TXS0104ERGY VQFN (14) 3.50 mm × 3.50 mm TXS0104EYZT DSBGA (12) 1.87 mm × 1.37 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Transfer Characteristics of an N-Channel Transistor Output Voltage (V) • • • • When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 VGATE 4.3VV VGATE ==4.3 VGATE 3.5VV VGATE ==3.5 VGATE ==2.8 VGATE 2.8VV VGATE ==2.5 VGATE 2.5VV VGATE ==2.2 VGATE 2.2VV 0 1 2 3 Input Voltage (V) 4 5 C001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 7 1 1 1 2 4 7 Absolute Maximum Ratings ..................................... 7 ESD Ratings ............................................................ 7 Recommended Operating Conditions....................... 8 Thermal Information: ZXU and YZT.......................... 8 Thermal Information: D, PW, and RGY .................... 8 Electrical Characteristics .......................................... 9 Timing Requirements: VCCA = 1.8 V ± 0.15 V ........ 10 Timing Requirements: VCCA = 2.5 V ± 0.2 V .......... 10 Timing Requirements: VCCA = 3.3 V ± 0.3 V .......... 10 Switching Characteristics: VCCA = 1.8 V ± 0.15 V 11 Switching Characteristics: VCCA = 2.5 V ± 0.2 V .. 13 Switching Characteristics: VCCA = 3.3 V ± 0.3 V .. 15 Typical Characteristics .......................................... 16 Parameter Measurement Information ................ 17 7.1 Load Circuits ........................................................... 17 7.2 Voltage Waveforms................................................. 18 8 Detailed Description ............................................ 19 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 19 19 20 20 Application and Implementation ........................ 21 9.1 Application Information............................................ 21 9.2 Typical Application .................................................. 21 10 Power Supply Recommendations ..................... 23 11 Layout................................................................... 23 11.1 Layout Guidelines ................................................. 23 11.2 Layout Example .................................................... 23 12 Device and Documentation Support ................. 24 12.1 12.2 12.3 12.4 12.5 12.6 Documentation Support ....................................... Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 24 24 24 24 24 24 13 Mechanical, Packaging, and Orderable Information ........................................................... 24 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision G (September 2017) to Revision H • Page Changed maximum values for maximum data rate within Switching Characteristics: VCCA = 3.3 V ± 0.3 V table ............. 15 Changes from Revision F (December 2014) to Revision G Page • Changed Device Information table ......................................................................................................................................... 1 • Deleted GXU references throughout ...................................................................................................................................... 4 • Added Junction temperature in the Absolute Maximum Ratings............................................................................................ 7 • Reformatted Electrical Characteristics.................................................................................................................................... 9 • Added Basics of Voltage Translation to Related Documentation......................................................................................... 24 • Added Receiving Notification of Documentation Updates and Community Resources ....................................................... 24 Changes from Revision E (August 2013) to Revision F Page • Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 • Deleted the Package thermal impedance information from the Absolute max ratings table into the Thermal Information table. Moved the Tstg row into the new Handling Ratings table. ......................................................................... 7 • Changed the last 2 rows of MIN MAX (24 MAX and 2 MAX) to the MIN columns, in the first switching characteristics table ..................................................................................................................................................................................... 12 2 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 Changes from Revision D (May 2008) to Revision E • Page Deleted the ordering table ..................................................................................................................................................... 1 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 3 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 5 Pin Configuration and Functions ZXU Package 12-Pin MICROSTAR JUNIOR Top View A B C 4 3 2 1 Pin Functions: BGA PIN 4 TYPE DESCRIPTION NAME NO. A1 A1 I/O Input/output A1. Referenced to VCCA. A2 A2 I/O Input/output A2. Referenced to VCCA. A3 A3 I/O Input/output A3. Referenced to VCCA. A4 A4 I/O Input/output A4. Referenced to VCCA. B1 C1 I/O Input/output B1. Referenced to VCCB. B2 C2 I/O Input/output B2. Referenced to VCCB. B3 C3 I/O Input/output B3. Referenced to VCCB. B4 C4 I/O Input/output B4. Referenced to VCCB. GND B4 — Ground OE B3 I VCCA B2 — A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB B1 — B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 YZT Package 12-Pin DSBGA Top View 3 2 1 D C B A Pin Functions: DSBGA PIN TYPE DESCRIPTION NAME NO. A1 A3 I/O Input/output A1. Referenced to VCCA. A2 B3 I/O Input/output A2. Referenced to VCCA. A3 C3 I/O Input/output A3. Referenced to VCCA. A4 D3 I/O Input/output A4. Referenced to VCCA. B1 A1 I/O Input/output B1. Referenced to VCCB. B2 B1 I/O Input/output B2. Referenced to VCCB. B3 C1 I/O Input/output B3. Referenced to VCCB. B4 D1 I/O Input/output B4. Referenced to VCCB. GND D2 — Ground OE C2 I VCCA B2 — A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB A2 — B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 5 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com A1 A2 A3 A4 NC VCCA VCCB RGY Package 14-Pin VQFN Top View 1 14 D and PW Package 14-Pin SOIC and TSSOP Top View 13 2 12 3 4 11 5 10 6 9 8 1 14 VCCB A1 2 13 B1 A2 3 12 B2 A3 4 11 B3 A4 5 10 B4 NC GND 6 9 7 8 NC OE OE GND 7 B1 B2 B3 B4 NC VCCA NC - No internal connection NC - No internal connection Pin Functions: D, PW, or RGY PIN 6 TYPE DESCRIPTION NAME NO. A1 2 I/O Input/output A1. Referenced to VCCA. A2 3 I/O Input/output A2. Referenced to VCCA. A3 4 I/O Input/output A3. Referenced to VCCA. A4 5 I/O Input/output A4. Referenced to VCCA. B1 13 I/O Input/output B1. Referenced to VCCB. B2 12 I/O Input/output B2. Referenced to VCCB. B3 11 I/O Input/output B3. Referenced to VCCB. B4 10 I/O Input/output B4. Referenced to VCCB. GND 7 — Ground OE 8 I VCCA 1 — A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB 14 — B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. Thermal Pad — — For the RGY package, the exposed center thermal pad must be connected to ground 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) Supply voltage, VCCA Supply voltage, VCCB Input voltage, VI (2) Voltage range applied to any output in the high-impedance or power-off state, VO (2) Voltage range applied to any output in the high or low state, VO (2) (3) MIN MAX UNIT –0.5 4.6 V V –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 VCCA + 0.5 B port –0.5 VCCB + 0.5 V V V Input clamp current, IIK VI < 0 –50 mA Output clamp current, IOK VO < 0 –50 mA Continuous output current, IO –50 50 mA Continuous current through each VCCA, VCCB, or GND –100 100 mA 150 °C 150 °C Operating junction temperature, TJ Storage temperature, T STG (1) (2) (3) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. The value of VCCA and VCCB are provided in the recommended operating conditions table. 6.2 ESD Ratings VALUE V(ESD) Electrostatic discharge A Port ±2000 V B Port ±15 kV Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) A Port ±1000 B Port ±1000 A Port ±200 B Port ±200 Machine model (MM) (1) (2) UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS001, all pins (1) V V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 7 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) (2) VCCA VCCA Supply voltage VCCB Supply voltage (3) High-level input voltage VIL Low-level input voltage Δt/Δv TA (1) (2) (3) Input transition rise or fall rate MIN MAX UNIT 1.65 3.6 V 2.3 5.5 V 1.65 V to 1.95 V 2.3 V to 5.5 V VCCI – 0.2 VCCI 2.3 V to 3.6 V 2.3 V to 5.5 V VCCI – 0.4 VCCI B-port I/Os 1.65 V to 3.6 V 2.3 V to 5.5 V VCCI – 0.4 VCCI OE input 1.65 V to 3.6 V 2.3 V to 5.5 V VCCA × 0.65 5.5 A-port I/Os 1.65 V to 3.6 V 2.3 V to 5.5 V 0 0.15 B-port I/Os 1.65 V to 3.6 V 2.3 V to 5.5 V 0 0.15 OE input 1.65 V to 3.6 V 2.3 V to 5.5 V 0 VCCA × 0.35 A-port I/Os push-pull driving 1.65 V to 3.6 V 2.3 V to 5.5 V 10 B-port I/Os push-pull driving 1.65 V to 3.6 V 2.3 V to 5.5 V 10 Control input 1.65 V to 3.6 V 2.3 V to 5.5 V A-port I/Os VIH VCCB (3) V V ns/V 10 Operating free-air temperature –40 85 °C VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. 6.4 Thermal Information: ZXU and YZT TXS0104E THERMAL METRIC (1) ZXU (BGA MICROSTAR JUNIOR) (2) YZT (DSBGA) UNIT 12 PINS 12 PINS RθJA Junction-to-ambient thermal resistance 132.0 89.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 98.4 0.9 °C/W RθJB Junction-to-board thermal resistance 68.7 14.4 °C/W ψJT Junction-to-top characterization parameter 3.1 3.0 °C/W ψJB Junction-to-board characterization parameter 68.2 14.4 °C/W (1) (2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. The package thermal impedance is calculated in accordance with JESD 51-7. 6.5 Thermal Information: D, PW, and RGY TXS0104E THERMAL METRIC (1) D (SOIC) (1) PW (TSSOP) (2) RGY (VQFN) (3) UNIT 14 PINS 14 PINS 14 PINS RθJA Junction-to-ambient thermal resistance 90.4 120.1 56.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 50.1 49.4 68.8 °C/W RθJB Junction-to-board thermal resistance 45.0 61.8 32.1 °C/W ψJT Junction-to-top characterization parameter 14.4 6.2 3.1 °C/W ψJB Junction-to-board characterization parameter 44.7 61.2 32.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — 12.8 °C/W (1) (2) (3) 8 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. The package thermal impedance is calculated in accordance with JESD 51-7. The package thermal impedance is calculated in accordance with JESD 51-5. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 6.6 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS (1) (2) (3) VCCA VCCB 1.65 V to 3.6 V 2.3 V to 5.5 V MIN TYP MAX VOHA Port A output high voltage IOH = –20 µA, VIB ≥ VCCB – 0.4 V TA = –40°C to 85°C VOLA Port A output low voltage IOL = 1 mA, VIB ≤ 0.15 V TA = –40°C to 85°C 1.65 V to 3.6 V 2.3 V to 5.5 V VOHB Port B output high voltage IOH = –20 µA, VIA ≥ VCCA – 0.2 V TA = –40°C to 85°C 1.65 V to 3.6 V 2.3 V to 5.5 V VOLB Port B output low voltage IOL = 1 mA, VIA ≤ 0.15 V TA = –40°C to 85°C 1.65 V to 3.6 V 2.3 V to 5.5 V OE: VI = VCCI or GND TA = 25°C 1.65 V to 3.6 V 2.3 V to 5.5 V –1 1 VI = VCCI or GND TA = –40°C to 85°C 1.65 V to 3.6 V 2.3 V to 5.5 V –2 2 A or B port: OE = VIL TA = 25°C 1.65 V to 3.6 V 2.3 V to 5.5 V –1 1 A or B port: OE = VIL TA = –40°C to 85°C 1.65 V to 3.6 V 2.3 V to 5.5 V –2 2 1.65 V to VCCB 2.3 V to 5.5 V 2.4 3.6 V 0 2.2 Input leakage current II High-impedance state output current IOZ ICCA VCCA supply current ICCB VCCB supply current ICCA + ICCB Combined supply current CI Input capacitance Cio (1) (2) (3) Input-to-output internal capacitance VI = VO = Open, IO = 0 TA = –40°C to 85°C VCCA × 0.8 V 0.4 VCCB × 0.8 0.4 V µA µA 0 5.5 V –1 2.3 V to 5.5 V 12 3.6 V 0 –1 0 5.5 V 1 1.65 V to VCCB 2.3 V to 5.5 V OE: TA = 25°C 3.3 V 3.3 V OE: TA = –40°C to 85°C 3.3 V 3.3 V A port: TA = 25°C 3.3 V 3.3 V 3.3 V 3.3 V B port: TA = –40°C to 85°C 3.3 V 3.3 V 3.3 V 3.3 V VI = VO = Open, IO = 0 TA = –40°C to 85°C V V 1.65 V to VCCB VI = VO = Open, IO = 0 TA = –40°C to 85°C UNIT 14.4 µA µA µA 2.5 pF 3.5 5 6.5 12 pF 16.5 VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 9 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 6.7 Timing Requirements: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) MIN Push-pull driving VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 24 Open-drain driving VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 2 Data rate Push-pull driving tw MAX Open-drain driving Mbps Data inputs VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 41 Data inputs VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 500 Pulse duration UNIT ns 6.8 Timing Requirements: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) MIN Push-pull driving 24 Open-drain driving VCCB = 2.5 V ± 0.2 V CCB = 3.3 V ± 0.3 V CCB = 5 V ± 0.5 V 2 Data rate Push-pull driving tw MAX VCCB = 2.5 V ± 0.2 V CCB = 3.3 V ± 0.3 V CCB = 5 V ± 0.5 V Open-drain driving Mbps Data inputs VCCB = 2.5 V ± 0.2 V CCB = 3.3 V ± 0.3 V CCB = 5 V ± 0.5 V 41 Data inputs VCCB = 2.5 V ± 0.2 V CCB = 3.3 V ± 0.3 V CCB = 5 V ± 0.5 V 500 Pulse duration UNIT ns 6.9 Timing Requirements: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) MIN Push-pull driving 24 Open-drain driving VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 2 Data rate tw 10 MAX VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V Mbps Push-pull driving Data inputs VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 41 Open-drain driving Data inputs VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V 500 Pulse duration Submit Documentation Feedback UNIT ns Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 6.10 Switching Characteristics: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) PARAMETER TEST CONDITIONS Push-pull driving t PHL Propagation delay time (high-to-low output) Push-pull driving Propagation delay time (low-to-high output) Push-pull driving Propagation delay time (high-to-low output) B-to-A Push-pull driving Propagation delay time (low-to-high output) ten tdis Enable time Disable time OE-to-A or B OE-to-A or B Push-pull driving trA Input rise time A-port rise time Open-drain driving Push-pull driving trB Input rise time 2.9 8.8 VCCB = 3.3 V ± 0.3 V 2.9 9.6 3 B-port rise time Open-drain driving 10 VCCB = 2.5 V ± 0.2 V 6.8 VCCB = 3.3 V ± 0.3 V 6.8 45 260 VCCB = 3.3 V ± 0.3 V 36 208 VCCB = 5 V ± 0.5 V 27 198 VCCB = 2.5 V ± 0.2 V 4.4 VCCB = 3.3 V ± 0.3 V 4.5 4.7 VCCB = 2.5 V ± 0.2 V 1.9 5.3 VCCB = 3.3 V ± 0.3 V 1.1 4.4 VCCB = 5 V ± 0.5 V 1.2 4 VCCB = 2.5 V ± 0.2 V 5.3 VCCB = 3.3 V ± 0.3 V 4.5 45 175 VCCB = 3.3 V ± 0.3 V 36 140 VCCB = 5 V ± 0.5 V 27 102 VCCB = 2.5 V ± 0.2 V 200 VCCB = 3.3 V ± 0.3 V 200 VCCB = 5 V ± 0.5 V 200 VCCB = 2.5 V ± 0.2 V 50 VCCB = 3.3 V ± 0.3 V 40 VCCB = 5 V ± 0.5 V 35 VCCB = 2.5 V ± 0.2 V 3.2 9.5 VCCB = 3.3 V ± 0.3 V 2.3 9.3 VCCB = 5 V ± 0.5 V 2 7.6 VCCB = 2.5 V ± 0.2 V 38 165 VCCB = 3.3 V ± 0.3 V 30 132 VCCB = 5 V ± 0.5 V 22 95 VCCB = 2.5 V ± 0.2 V 4 10.8 VCCB = 3.3 V ± 0.3 V 2.7 9.1 VCCB = 5 V ± 0.5 V 2.7 7.6 VCCB = 2.5 V ± 0.2 V 34 145 VCCB = 3.3 V ± 0.3 V 23 106 VCCB = 5 V ± 0.5 V 10 58 Submit Documentation Feedback Product Folder Links: TXS0104E ns 0.5 VCCB = 2.5 V ± 0.2 V Copyright © 2006–2018, Texas Instruments Incorporated ns 7 VCCB = 2.5 V ± 0.2 V VCCB = 5 V ± 0.5 V Open-drain driving UNIT 5.8 VCCB = 2.5 V ± 0.2 V VCCB = 5 V ± 0.5 V Open-drain driving tPLH 4.7 VCCB = 5 V ± 0.5 V Open-drain driving tPHL 4.6 VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V A-to-B MAX VCCB = 2.5 V ± 0.2 V VCCB = 5 V ± 0.5 V Open-drain driving tPLH MIN ns ns ns ns 11 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com Switching Characteristics: VCCA = 1.8 V ± 0.15 V (continued) over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) PARAMETER TEST CONDITIONS Push-pull driving tfA Input fall time A-port fall time Open-drain driving Push-pull driving tfB Input fall time B-port fall time Open-drain driving MIN MAX VCCB = 2.5 V ± 0.2 V 2 5.9 VCCB = 3.3 V ± 0.3 V 1.9 6 VCCB = 5 V ± 0.5 V 1.7 13.3 VCCB = 2.5 V ± 0.2 V 4.4 6.9 VCCB = 3.3 V ± 0.3 V 4.3 6.4 VCCB = 5 V ± 0.5 V 4.2 6.1 VCCB = 2.5 V ± 0.2 V 2.9 7.6 VCCB = 3.3 V ± 0.3 V 2.8 7.5 VCCB = 5 V ± 0.5 V 2.8 8.8 VCCB = 2.5 V ± 0.2 V 6.9 13.8 VCCB = 3.3 V ± 0.3 V 7.5 16.2 7 16.2 VCCB = 5 V ± 0.5 V tSK(O) Skew (time), output Channel-to-channel skew Push-pull driving Maximum data rate Open-drain driving 12 VCCB = 2.5 V ± 0.2 V 1 VCCB = 3.3 V ± 0.3 V 1 VCCB = 5 V ± 0.5 V 1 VCCB = 2.5 V ± 0.2 V 24 VCCB = 3.3 V ± 0.3 V 24 VCCB = 5 V ± 0.5 V 24 VCCB = 2.5 V ± 0.2 V 2 VCCB = 3.3 V ± 0.3 V 2 VCCB = 5 V ± 0.5 V 2 Submit Documentation Feedback UNIT ns ns ns Mbps Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 6.11 Switching Characteristics: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS Push-pull driving tPHL Propagation delay time (high-to-low output) A-to-B 3.2 VCCB = 3.3 V ± 0.3 V 3.3 VCCB = 2.5 V ± 0.2 V VCCB = 3.3 V ± 0.3 V VCCB = 5 V ± 0.5 V Push-pull driving tPLH Open-drain driving Push-pull driving tPHL Propagation delay time (high-to-low output) Open-drain driving Push-pull driving tPLH Propagation delay time (low-to-high output) Open-drain driving ten tdis Enable time Disable time OE-to-A or B OE-to-A or B Push-pull driving trA Input rise time A-port rise time Open-drain driving Push-pull driving trB Input rise time 2 6 5.8 VCCB = 2.5 V ± 0.2 V 3.5 VCCB = 3.3 V ± 0.3 V 4.1 B-port rise time Open-drain driving 43 250 VCCB = 3.3 V ± 0.3 V 36 206 VCCB = 5 V ± 0.5 V 27 190 VCCB = 2.5 V ± 0.2 V 3 VCCB = 3.3 V ± 0.3 V 3.6 4.3 VCCB = 2.5 V ± 0.2 V 1.8 4.7 VCCB = 3.3 V ± 0.3 V 2.6 4.2 VCCB = 5 V ± 0.5 V 1.2 4 VCCB = 2.5 V ± 0.2 V 2.5 VCCB = 3.3 V ± 0.3 V 1.6 44 170 VCCB = 3.3 V ± 0.3 V 37 140 VCCB = 5 V ± 0.5 V 27 103 VCCB = 2.5 V ± 0.2 V 200 VCCB = 3.3 V ± 0.3 V 200 VCCB = 5 V ± 0.5 V 200 VCCB = 2.5 V ± 0.2 V 50 VCCB = 3.3 V ± 0.3 V 40 VCCB = 5 V ± 0.5 V 35 VCCB = 2.5 V ± 0.2 V 2.8 7.4 VCCB = 3.3 V ± 0.3 V 2.6 6.6 VCCB = 5 V ± 0.5 V 1.8 5.6 VCCB = 2.5 V ± 0.2 V 34 149 VCCB = 3.3 V ± 0.3 V 28 121 VCCB = 5 V ± 0.5 V 24 89 VCCB = 2.5 V ± 0.2 V 3.2 8.3 VCCB = 3.3 V ± 0.3 V 2.9 7.2 VCCB = 5 V ± 0.5 V 2.4 6.1 VCCB = 2.5 V ± 0.2 V 35 151 VCCB = 3.3 V ± 0.3 V 24 112 VCCB = 5 V ± 0.5 V 12 64 Submit Documentation Feedback Product Folder Links: TXS0104E ns 0.7 VCCB = 2.5 V ± 0.2 V Copyright © 2006–2018, Texas Instruments Incorporated ns 4.4 VCCB = 2.5 V ± 0.2 V VCCB = 5 V ± 0.5 V B-to-A 6.3 2.1 VCCB = 5 V ± 0.5 V B-to-A UNIT 3.4 1.7 VCCB = 5 V ± 0.5 V A-to-B MAX VCCB = 2.5 V ± 0.2 V VCCB = 5 V ± 0.5 V Open-drain driving Propagation delay time (low-to-high output) MIN ns ns ns ns 13 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com Switching Characteristics: VCCA = 2.5 V ± 0.2 V (continued) over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS Push-pull driving tfA Input fall time A-port fall time Open-drain driving Push-pull driving tfB Input fall time B-port fall time Open-drain driving tSK(O) Skew (time), output Channel-to-channel skew Push-pull driving Maximum data rate Open-drain driving 14 MIN MAX VCCB = 2.5 V ± 0.2 V 1.9 5.7 VCCB = 3.3 V ± 0.3 V 1.9 5.5 VCCB = 5 V ± 0.5 V 1.8 5.3 VCCB = 2.5 V ± 0.2 V 4.4 6.9 VCCB = 3.3 V ± 0.3 V 4.3 6.2 VCCB = 5 V ± 0.5 V 4.2 5.8 VCCB = 2.5 V ± 0.2 V 2.2 7.8 VCCB = 3.3 V ± 0.3 V 2.4 6.7 VCCB = 5 V ± 0.5 V 2.6 6.6 VCCB = 2.5 V ± 0.2 V 5.1 8.8 VCCB = 3.3 V ± 0.3 V 5.4 9.4 VCCB = 5 V ± 0.5 V 5.4 10.4 VCCB = 2.5 V ± 0.2 V 1 VCCB = 3.3 V ± 0.3 V 1 VCCB = 5 V ± 0.5 V 1 VCCB = 2.5 V ± 0.2 V 24 VCCB = 3.3 V ± 0.3 V 24 VCCB = 5 V ± 0.5 V 24 VCCB = 2.5 V ± 0.2 V 2 VCCB = 3.3 V ± 0.3 V 2 VCCB = 5 V ± 0.5 V 2 Submit Documentation Feedback UNIT ns ns ns Mbps Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 6.12 Switching Characteristics: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) PARAMETER tPHL TEST CONDITIONS Push-pull driving Propagation delay time (high-to-low output) Open-drain driving A-to-B tPLH tPHL Push-pull driving Propagation delay time (low-to-high output) Open-drain driving Push-pull driving Propagation delay time (high-to-low output) Open-drain driving B-to-A tPLH Push-pull driving Propagation delay time (low-to-high output) Open-drain driving ten Enable time OE-to-A or B tdis Disable time OE-to-A or B Input rise time A-port rise time Push-pull driving trA Open-drain driving Push-pull driving trB Input rise time B-port rise time Open-drain driving Push-pull driving tfA Input fall time A-port fall time Open-drain driving Push-pull driving tfB Input fall time B-port fall time Open-drain driving tSK(O) Skew (time), output Channel-to-channel skew Push-pull driving Maximum data rate Open-drain driving MIN VCCB = 3.3 V ± 0.3 V MAX 2.4 VCCB = 5 V ± 0.5 V 3.1 VCCB = 3.3 V ± 0.3 V 1.3 4.2 VCCB = 5 V ± 0.5 V 1.4 4.6 VCCB = 3.3 V ± 0.3 V 4.4 VCCB = 3.3 V ± 0.3 V 36 204 VCCB = 5 V ± 0.5 V 28 165 VCCB = 3.3 V ± 0.3 V 2.5 VCCB = 5 V ± 0.5 V 3.3 VCCB = 3.3 V ± 0.3 V 1 VCCB = 5 V ± 0.5 V 1 124 97 VCCB = 3.3 V ± 0.3 V 2.5 VCCB = 5 V ± 0.5 V 2.6 VCCB = 3.3 V ± 0.3 V 3 139 VCCB = 5 V ± 0.5 V 3 105 VCCB = 3.3 V ± 0.3 V 200 VCCB = 5 V ± 0.5 V 200 VCCB = 3.3 V ± 0.3 V 40 VCCB = 5 V ± 0.5 V 35 VCCB = 3.3 V ± 0.3 V 2.3 VCCB = 5 V ± 0.5 V 1.9 4.8 VCCB = 3.3 V ± 0.3 V 25 116 VCCB = 5 V ± 0.5 V 19 85 VCCB = 3.3 V ± 0.3 V 2.5 6.4 VCCB = 5 V ± 0.5 V 2.1 7.4 VCCB = 3.3 V ± 0.3 V 26 116 VCCB = 5 V ± 0.5 V 26 116 VCCB = 3.3 V ± 0.3 V 2 5.4 VCCB = 5 V ± 0.5 V 1.9 5 VCCB = 3.3 V ± 0.3 V 4.3 6.1 VCCB = 5 V ± 0.5 V 4.2 5.7 VCCB = 3.3 V ± 0.3 V 2.3 7.4 VCCB = 5 V ± 0.5 V 2.4 7.6 5 7.6 4.8 8.3 VCCB = 5 V ± 0.5 V ns 4.2 VCCB = 5 V ± 0.5 V VCCB = 3.3 V ± 0.3 V UNIT 1 VCCB = 5 V ± 0.5 V 1 24 VCCB = 5 V ± 0.5 V 24 VCCB = 3.3 V ± 0.3 V 2 VCCB = 5 V ± 0.5 V 2 ns ns 5.6 VCCB = 3.3 V ± 0.3 V VCCB = 3.3 V ± 0.3 V ns ns ns ns ns ns Mbps Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 15 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 700 700 600 600 Low-Level Output Voltage (mV) Low-Level Output Voltage (mV) 6.13 Typical Characteristics 500 400 300 200 VCCB = 2.7 V VCCB = 3.3 V VCCB = 5 V 100 500 400 300 200 100 VCCB = 3.3 V VCCB = 5 V 0 0 0 2 4 VCCA = 1.8 V 6 8 10 12 14 Low-Level Current (mA) 16 18 20 0 2 4 D001 VIL(A) = 150 mV 6 8 10 12 14 Low-Level Current (mA) VCCA = 2.7 V Figure 1. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) 16 18 20 D003 VIL(A) = 150 mV Figure 2. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) Low-Level Output Voltage (mV) 700 600 500 400 300 200 100 VCCB = 3.3 V 0 0 2 4 6 8 10 12 14 Low-Level Current (mA) VCCA = 3.3 V 16 18 20 D002 VIL(A) = 150 mV Figure 3. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) 16 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 7 Parameter Measurement Information 7.1 Load Circuits VCCI VCCI VCCO VCCO DUT DUT IN IN OUT 15 pF OUT 15 pF 1M Figure 4. Data Rate, Pulse Duration, Propagation Delay, Output Rise-Time and Fall-Time Measurement Using a Push-Pull Driver 1M Figure 5. Data Rate, Pulse Duration, Propagation Delay, Output Rise-Time and Fall-Time Measurement Using an Open-Drain Driver 2 × VCCO 50 k From Output Under Test 15 pF S1 Open 50 k TEST S1 tPZL / tPLZ (tdis) 2 × VCCO tPHZ / tPZH (ten) Open Figure 6. Load Circuit for Enable-Time and Disable-Time Measurement 1. 2. 3. 4. tPLZ and tPHZ are the same as tdis. tPZL and tPZH are the same as ten. VCCI is the VCC associated with the input port. VCCO is the VCC associated with the output port. Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 17 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 7.2 Voltage Waveforms The outputs are measured one at a time, with one transition per measurement. All input pulses are supplied by generators that have the following characteristics: • PRR ≤ 10 MHz • ZO = 50 Ω • dv/dt ≥ 1 V/ns tw VCCI Input VCCI / 2 VCCI / 2 0V Figure 7. Pulse Duration VCCI Input VCCI / 2 VCCI / 2 0V tPLH tPHL VCCO / 2 Output VOH 0.9 × VCCO VCCO / 2 VOL tf 0.1 × VCCO tr Figure 8. Propagation Delay Times VCCA VCCA / 2 OE input VCCA / 2 0V tPLZ tPZL VOH Output Waveform 1 S1 at 2 × VCCO (1) VCCO / 2 VOH × 0.1 tPHZ tPZH Output Waveform 2 S1 at GND (2) VOL VOH × 0.9 VOH VCCO / 2 0V (1) Waveform 1 is for an output with internal such that the output is high, except when OE is high (see Figure 6). (2) Waveform 2 is for an output with conditions such that the output is low, except when OE is high. Figure 9. Enable and Disable Times 18 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 8 Detailed Description 8.1 Overview The TXS0104E device is a directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.65 V to 3.6 V, while the B port can accept I/O voltages from 2.3 V to 5.5 V. The device is a pass gate architecture with edge rate accelerators (one shots) to improve the overall data rate. 10-kΩ pullup resistors, commonly used in open drain applications, have been conveniently integrated so that an external resistor is not needed. While this device is designed for open drain applications, the device can also translate push-pull CMOS logic outputs. 8.2 Functional Block Diagram VccB VccA OE One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A1 B1 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A2 B2 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A3 B3 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A4 B4 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 19 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 8.3 Feature Description 8.3.1 Architecture The TXS0104E architecture (see Figure 10) does not require a direction-control signal in order to control the direction of data flow from A to B or from B to A. VCCB VCCA T1 One-shot One-shot 10 kΩ T2 10 kΩ Gate Bias A B Figure 10. Architecture of a TXS01xx Cell Each A-port I/O has an internal 10-kΩ pullup resistor to VCCA, and each B-port I/O has an internal 10-kΩ pullup resistor to VCCB. The output one-shots detect rising edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T2) for a short duration which speeds up the low-to-high transition. 8.3.2 Input Driver Requirements The fall time (tfA, tfB) of a signal depends on the output impedance of the external device driving the data I/Os of the TXS0104E device. Similarly, the tPHL and maximum data rates also depend on the output impedance of the external driver. The values for tfA, tfB, tPHL, and maximum data rates in the data sheet assume that the output impedance of the external driver is less than 50 Ω. 8.3.3 Power Up During operation, ensure that VCCA ≤ VCCB at all times. During power-up sequencing, VCCA ≥ VCCB does not damage the device, so any power supply can be ramped up first. 8.3.4 Enable and Disable The TXS0104E device has an OE input that disables the device by setting OE low, which places all I/Os in the high-impedance state. The disable time (tdis) indicates the delay between the time when the OE pin goes low and when the outputs actually enter the high-impedance state. The enable time (ten) indicates the amount of time the user must allow for the one-shot circuitry to become operational after the OE pin is taken high. 8.3.5 Pullup and Pulldown Resistors on I/O Lines Each A-port I/O has an internal 10-kΩ pullup resistor to VCCA, and each B-port I/O has an internal 10-kΩ pullup resistor to VCCB. If a smaller value of pullup resistor is required, an external resistor must be added from the I/O to VCCA or VCCB (in parallel with the internal 10-kΩ resistors). 8.4 Device Functional Modes The TXS0104E device has two functional modes, enabled and disabled. To disable the device set the OE input low, which places all I/Os in a high impedance state. Setting the OE input high will enable the device. 20 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TXS0104E device can be used in level-translation applications for interfacing devices or systems operating at different interface voltages with one another. The TXS0104E device is ideal for use in applications where an open-drain driver is connected to the data I/Os. The TXS0104E device can also be used in applications where a push-pull driver is connected to the data I/Os, but the TXB0104 device might be a better option for such pushpull applications. 9.2 Typical Application 1.8 V 3.3 V 0.1 µF VCCA 0.1 µF VCCB OE 1.8-V System Controller 3.3-V System TXS0104 A1 A2 A3 A4 Data GND B1 B2 B3 B4 Data Figure 11. Application Schematic 9.2.1 Design Requirements For this design example, use the parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 1.65 to 3.6 V Output voltage range 2.3 to 5.5 V Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 21 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 9.2.2 Detailed Design Procedure To begin the design process, determine the following: • • • Input voltage range – Use the supply voltage of the device that is driving the TXS0104E device to determine the input voltage range. For a valid logic high the value must exceed the VIH of the input port. For a valid logic low the value must be less than the VIL of the input port. Output voltage range – Use the supply voltage of the device that the TXS0104E device is driving to determine the output voltage range. – The TXS0104E device has 10-kΩ internal pullup resistors. External pullup resistors can be added to reduce the total RC of a signal trace if necessary. An external pull down resistor decreases the output VOH and VOL. Use Equation 1 to calculate the VOH as a result of an external pull down resistor. VOH = VCCx × RPD / (RPD + 10 kΩ) (1) where VCCx is the supply voltage on either VCCA or VCCB RPD is the value of the external pull down resistor 9.2.3 Application Curve 2 V/div 5V 2V 100 ns/div VCCA = 1.8 V VCCB = 5 V Figure 12. Level-Translation of a 2.5-MHz Signal 22 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651H – JUNE 2006 – REVISED MAY 2018 10 Power Supply Recommendations The TXS0104E device uses two separate configurable power-supply rails, VCCA and VCCB. VCCB accepts any supply voltage from 2.3 V to 5.5 V and VCCA accepts any supply voltage from 1.65 V to 3.6 V as long as Vs is less than or equal to VCCB. The A port and B port are designed to track VCCA and VCCB respectively allowing for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. The TXS0104E device does not require power sequencing between VCCA and VCCB during power-up so the power-supply rails can be ramped in any order. A VCCA value greater than or equal to VCCB (VCCA ≥ VCCB) does not damage the device, but during operation, VCCA must be less than or equal to VCCB (VCCA ≤ VCCB) at all times. The output-enable (OE) input circuit is designed so that it is supplied by VCCA and when the (OE) input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state of the outputs during power up or power down, the OE input pin must be tied to GND through a pulldown resistor and must not be enabled until VCCA and VCCB are fully ramped and stable. The minimum value of the pulldown resistor to ground is determined by the current-sourcing capability of the driver. 11 Layout 11.1 Layout Guidelines To • • • • ensure reliability of the device, following common printed-circuit board layout guidelines is recommended. Bypass capacitors should be used on power supplies. Short trace lengths should be used to avoid excessive loading. PCB signal trace-lengths must be kept short enough so that the round-trip delay of any reflection is less than the one shot duration, approximately 30 ns, ensuring that any reflection encounters low impedance at the source driver. Placing pads on the signal paths for loading capacitors or pullup resistors to help adjust rise and fall times of signals depending on the system requirements 11.2 Layout Example LEGEND VIA to Power Plane Polygonal Copper Pour VIA to GND Plane (Inner Layer) VCCA VCCB Bypass Capacitors Pads on signal paths for potential rise and fall time adjustments To Controller To System 1 VCCA VCCB 14 2 A1 B1 13 3 A2 B2 12 4 A3 B3 11 To Controller 5 A4 B4 10 To System To Controller 6 NC NC 9 To System 7 GND OE 8 To Controller To System Keep OE low until VCCA and VCCB are powered up Figure 13. TXS0104E Layout Example Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E 23 TXS0104E SCES651H – JUNE 2006 – REVISED MAY 2018 www.ti.com 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation For related documentation see the following: • Texas Instruments, Effects of External Pullup and Pulldown Resistors on TXS and TXB Devices application report • Texas Instruments, Basics of Voltage Translation application report • Texas Instruments, A Guide to Voltage Translation With TXS-Type Translators application report 12.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.4 Trademarks NanoFree, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 12.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 24 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated Product Folder Links: TXS0104E PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TXS0104ED ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EDG4 ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EDR ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EPWR ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 YF04E TXS0104EPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 YF04E TXS0104ERGYR ACTIVE VQFN RGY 14 3000 Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR -40 to 85 YF04E TXS0104ERGYRG4 ACTIVE VQFN RGY 14 3000 Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR -40 to 85 YF04E TXS0104EYZTR ACTIVE DSBGA YZT 12 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 (2HN, 2N, 2N7) TXS0104EZXUR ACTIVE BGA MICROSTAR JUNIOR ZXU 12 2500 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 YF04E (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of