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TXS0104EYZTR

TXS0104EYZTR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    DSBGA12

  • 描述:

    用于开漏和推挽应用的4位双向电压电平转换器

  • 数据手册
  • 价格&库存
TXS0104EYZTR 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents Reference Design TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 TXS0104E 4-Bit Bidirectional Voltage-Level Translator For Open-Drain and Push-Pull Applications 1 Features 3 Description • • This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65 V to 3.6 V. VCCA must be less than or equal to VCCB. The B port is designed to track VCCB. VCCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. 1 • • • • • • No Direction-Control Signal Needed Max Data Rates – 24 Mbps (Push Pull) – 2 Mbps (Open Drain) Available in the Texas Instruments NanoFree™ Package 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) No Power-Supply Sequencing Required – VCCA or VCCB Can Be Ramped First Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) – B Port – 15-kV Human-Body Model (A114-B) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) IEC 61000-4-2 ESD (B Port) – ±8-kV Contact Discharge – ±10-kV Air-Gap Discharge 2 Applications Handset Smartphone Tablet Desktop PC The TXS0104E is designed so that the OE input circuit is supplied by VCCA. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. Device Information(1) PART NUMBER TXS0104E PACKAGE BODY SIZE (NOM) SOIC (14) 8.65 mm × 3.91 mm TSSOP (14) 5.00 mm × 4.40 mm BGA (12) 2.00 mm × 2.50 mm VQFN (14) 3.50 mm × 3.50 mm DSBGA (12) 1.90 mm × 1.90 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Transfer Characteristics of an N-Channel Transistor Output Voltage (V) • • • • When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 VGATE 4.3VV VGATE ==4.3 VGATE 3.5VV VGATE ==3.5 VGATE ==2.8 VGATE 2.8VV VGATE ==2.5 VGATE 2.5VV VGATE ==2.2 VGATE 2.2VV 0 1 2 3 Input Voltage (V) 4 5 C001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 7 1 1 1 2 3 5 Absolute Maximum Ratings ..................................... 5 Handling Ratings ...................................................... 5 Recommended Operating Conditions ...................... 6 Thermal Information: GXU, ZXU, and YZT............... 6 Thermal Information: D, PW, and RGY .................... 6 Electrical Characteristics .......................................... 7 Timing Requirements: VCCA = 1.8 V ± 0.15 V .......... 8 Timing Requirements: VCCA = 2.5 V ± 0.2 V ............ 8 Timing Requirements: VCCA = 3.3 V ± 0.3 V ............ 8 Switching Characteristics: VCCA = 1.8 V ± 0.15 V .. 9 Switching Characteristics: VCCA = 2.5 V ± 0.2 V .. 10 Switching Characteristics: VCCA = 3.3 V ± 0.3 V .. 11 Typical Characteristics .......................................... 12 Parameter Measurement Information ................ 13 7.1 Load Circuits ........................................................... 13 7.2 Voltage Waveforms................................................. 14 8 Detailed Description ............................................ 15 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 15 15 16 16 Application and Implementation ........................ 17 9.1 Application Information............................................ 17 9.2 Typical Application .................................................. 17 10 Power Supply Recommendations ..................... 19 11 Layout................................................................... 19 11.1 Layout Guidelines ................................................. 19 11.2 Layout Example .................................................... 19 12 Device and Documentation Support ................. 20 12.1 Trademarks ........................................................... 20 12.2 Electrostatic Discharge Caution ............................ 20 12.3 Glossary ................................................................ 20 13 Mechanical, Packaging, and Orderable Information ........................................................... 20 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (August 2013) to Revision F Page • Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 • Deleted the Package thermal impedance information from the Absolute max ratings table into the Thermal Information table. Moved the Tstg row into the new Handling Ratings table. ......................................................................... 5 • Changed the last 2 rows of MIN MAX (24 MAX and 2 MAX) to the MIN columns, in the first switching characteristics table ....................................................................................................................................................................................... 9 Changes from Revision D (May 2008) to Revision E • 2 Page Deleted the ordering table ..................................................................................................................................................... 1 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 5 Pin Configuration and Functions YZT Package 12-Pin DSBGA Top View GXU and ZXU Package 12-Pin MICROSTAR JUNIOR Top View A 3 2 1 B C D C B A 4 3 2 1 D and PW Package 14-Pin SOIC Top View VCCB 1 14 2 13 3 12 4 11 5 10 6 8 OE 9 7 GND A1 A2 A3 A4 NC VCCA RGY Package 14-Pin VQFN Top View B1 B2 B3 B4 NC VCCA 1 14 VCCB A1 2 13 B1 A2 3 12 B2 A3 4 11 B3 A4 5 10 B4 NC GND 6 9 7 8 NC OE NOTE: NC - No internal connection NOTE: NC - No internal connection Pin Functions: D, PW, or RGY PIN TYPE DESCRIPTION NAME NO. A1 2 I/O Input/output A1. Referenced to VCCA. A2 3 I/O Input/output A2. Referenced to VCCA. A3 4 I/O Input/output A3. Referenced to VCCA. A4 5 I/O Input/output A4. Referenced to VCCA. B1 13 I/O Input/output B1. Referenced to VCCB. B2 12 I/O Input/output B2. Referenced to VCCB. B3 11 I/O Input/output B3. Referenced to VCCB. B4 10 I/O Input/output B4. Referenced to VCCB. GND 7 S NC 6 N/A No connection. Not internally connected. NC 9 N/A No connection. Not internally connected. OE 8 I 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. VCCA 1 S A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB 14 S B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. Thermal Pad – – For the RGY package, the exposed center thermal pad must be connected to ground Ground Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 3 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com Pin Functions: BGA PIN TYPE DESCRIPTION NAME NO. A1 A1 I/O Input/output A1. Referenced to VCCA. A2 A2 I/O Input/output A2. Referenced to VCCA. A3 A3 I/O Input/output A3. Referenced to VCCA. A4 A4 I/O Input/output A4. Referenced to VCCA. B1 C1 I/O Input/output B1. Referenced to VCCB. B2 C2 I/O Input/output B2. Referenced to VCCB. B3 C3 I/O Input/output B3. Referenced to VCCB. B4 C4 I/O Input/output B4. Referenced to VCCB. GND B4 S NC – N/A No connection. Not internally connected. NC – N/A No connection. Not internally connected. OE B3 I 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. VCCA B2 S A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB B1 S B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. Ground Pin Functions: DSBGA PIN 4 TYPE DESCRIPTION NAME NO. A1 A3 I/O Input/output A1. Referenced to VCCA. A2 B3 I/O Input/output A2. Referenced to VCCA. A3 C3 I/O Input/output A3. Referenced to VCCA. A4 D3 I/O Input/output A4. Referenced to VCCA. B1 A1 I/O Input/output B1. Referenced to VCCB. B2 B1 I/O Input/output B2. Referenced to VCCB. B3 C1 I/O Input/output B3. Referenced to VCCB. B4 D1 I/O Input/output B4. Referenced to VCCB. GND D2 S NC – N/A No connection. Not internally connected. NC – N/A No connection. Not internally connected. OE C2 I 3-state output-mode enable. Pull OE low to place all outputs in 3-state mode. Referenced to VCCA. VCCA B2 S A-port supply voltage. 1.65 V ≤ VCCA ≤ 3.6 V and VCCA ≤ VCCB. VCCB A2 S B-port supply voltage. 2.3 V ≤ VCCB ≤ 5.5 V. Ground Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 6 Specifications 6.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) VCCA VCCB MIN MAX –0.5 4.6 –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 4.6 B port –0.5 6.5 A port –0.5 VCCA + 0.5 B port –0.5 VCCB + 0.5 Supply voltage range UNIT V VI Input voltage range (2) VO Voltage range applied to any output in the high-impedance or power-off state (2) VO Voltage range applied to any output in the high or low state (2) IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current –50 50 mA Continuous current through each VCCA, VCCB, or GND –100 100 mA (1) (2) (3) (3) V V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. The value of VCCA and VCCB are provided in the recommended operating conditions table. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) Electrostatic discharge MIN MAX UNIT –65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) A Port 2000 V B Port 15 kV Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) A Port Machine model (MM) A Port 1000 B Port V 200 B Port (1) (2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 5 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 6.3 Recommended Operating Conditions (1) (2) VCCA VCCA VCCB MIN MAX 1.65 3.6 2.3 5.5 VCCI – 0.2 VCCI VCCI – 0.4 VCCI VCCI – 0.4 VCCI VCCA × 0.65 5.5 0 0.15 Supply voltage (3) 1.65 V to 1.95 V A-port I/Os High-level input voltage VIH VCCB 2.3 V to 3.6 V B-port I/Os OE input 2.3 V to 5.5 V 1.65 V to 3.6 V 2.3 V to 5.5 V 1.65 V to 3.6 V 2.3 V to 5.5 V A-port I/Os Low-level input voltage VIL B-port I/Os OE input 0 0.15 0 VCCA × 0.35 A-port I/Os, push-pull driving Δt/Δv Input transition rise or fall rate TA Operating free-air temperature B-port I/Os, push-pull driving V V V 10 1.65 V to 3.6 V 2.3 V to 5.5 V 10 Control input (1) (2) (3) UNIT ns/V 10 –40 85 °C VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. 6.4 Thermal Information: GXU, ZXU, and YZT TXS0104E THERMAL METRIC (1) GXU/ZXU (12) (2) YZT (12) 89.2 RθJA Junction-to-ambient thermal resistance 132.0 RθJC(top) Junction-to-case (top) thermal resistance 98.4 0.9 RθJB Junction-to-board thermal resistance 68.7 14.4 ψJT Junction-to-top characterization parameter 3.1 3.0 ψJB Junction-to-board characterization parameter 68.2 14.4 (1) (2) UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The package thermal impedance is calculated in accordance with JESD 51-7. 6.5 Thermal Information: D, PW, and RGY TXS0104E THERMAL METRIC (1) D(14) (1) PW(14) (2) RGY(14) (3) RθJA Junction-to-ambient thermal resistance 90.4 120.1 56.1 RθJC(top) Junction-to-case (top) thermal resistance 50.1 49.4 68.8 RθJB Junction-to-board thermal resistance 45.0 61.8 32.1 ψJT Junction-to-top characterization parameter 14.4 6.2 3.1 ψJB Junction-to-board characterization parameter 44.7 61.2 32.3 RθJC(bot) Junction-to-case (bottom) thermal resistance – – 12.8 (1) (2) (3) 6 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The package thermal impedance is calculated in accordance with JESD 51-7. The package thermal impedance is calculated in accordance with JESD 51-5. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 6.6 Electrical Characteristics (1) (2) (3) over recommended operating free-air temperature range (unless otherwise noted) TEST CONDITIONS VCCA VCCB VOHA IOH = –20 μA, VIB ≥ VCCB – 0.4 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOLA IOL = 1 mA, VIB ≤ 0.15 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOHB IOH = –20 μA, VIA ≥ VCCA – 0.2 V 1.65 V to 3.6 V 2.3 V to 5.5 V VOLB IOL = 1 mA, VIA ≤ 0.15 V 1.65 V to 3.6 V 2.3 V to 5.5 V TA = 25°C MIN TYP TA = 25°C to 85°C MAX MIN MAX VCCA × 0.8 UNIT V 0.4 VCCB × 0.8 V V 0.4 V II OE VI = VCCI or GND 1.65 V to 3.6 V 2.3 V to 5.5 V –1 1 –2 2 μA IOZ A or B port OE = VIL 1.65 V to 3.6 V 2.3 V to 5.5 V –1 1 –2 2 μA 1.65 V to VCCB 2.3 V to 5.5 V 2.4 3.6 V 0 2.2 0 5.5 V –1 1.65 V to VCCB 2.3 V to 5.5 V 12 3.6 V 0 –1 0 5.5 V 1 1.65 V to VCCB 2.3 V to 5.5 V 3.3 V 3.3 V VI = VO = Open, IO = 0 ICCA VI = VO = Open, IO = 0 ICCB VI = VO = Open, IO = 0 ICCA + ICCB CI Cio (1) (2) (3) OE A port B port 3.3 V 3.3 V μA μA 14.4 μA 2.5 3.5 pF 5 6.5 12 16.5 pF VCCI is the supply voltage associated with the input port. VCCO is the supply voltage associated with the output port. VCCA must be less than or equal to VCCB, and VCCA must not exceed 3.6 V. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 7 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 6.7 Timing Requirements: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) VCCB = 2.5 V ± 0.2 V MIN Data rate tw Pulse duration VCCB = 3.3 V ± 0.3 V MAX Push-pull driving Open-drain driving Data inputs MAX MIN UNIT MAX 24 24 24 2 2 2 Open-drain driving Push-pull driving MIN VCCB = 5 V ± 0.5 V 41 41 41 500 500 500 Mbps ns 6.8 Timing Requirements: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) VCCB = 2.5 V ± 0.2 V MIN Data rate tw Pulse duration MAX Push-pull driving Open-drain driving Push-pull driving Open-drain driving Data inputs VCCB = 3.3 V ± 0.3 V MIN VCCB = 5 V ± 0.5 V MAX MIN UNIT MAX 24 24 24 2 2 2 41 41 41 500 500 500 Mbps ns 6.9 Timing Requirements: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) VCCB = 3.3 V ± 0.3 V MIN Data rate tw 8 Pulse duration Push-pull driving Open-drain driving Push-pull driving Open-drain driving Data inputs Submit Documentation Feedback VCCB = 5 V ± 0.5 V MAX MIN UNIT MAX 24 24 2 2 41 41 500 500 Mbps ns Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 6.10 Switching Characteristics: VCCA = 1.8 V ± 0.15 V over recommended operating free-air temperature range, VCCA = 1.8 V ± 0.15 V (unless otherwise noted) FROM (INPUT) TO (OUTPUT) TEST CONDITIONS VCCB = 2.5 V ± 0.2 V MIN Push-pull driving tPHL A B tPLH Open-drain driving B A tPLH Open-drain driving 45 ten OE A or B tdis OE A or B trA A-port rise time trB B-port rise time tfA A-port fall time Channel-to-channel skew 6.8 36 5.3 175 4.4 27 140 198 4 0.5 27 200 50 40 200 ns 35 ns 9.3 2 7.6 Open-drain driving 38 165 30 132 22 95 4 10.8 2.7 9.1 2.7 7.6 34 145 23 106 10 58 2 5.9 1.9 6 1.7 13.3 Open-drain driving 4.4 6.9 4.3 6.4 4.2 6.1 Push-pull driving 2.9 7.6 2.8 7.5 2.8 8.8 Open-drain driving 6.9 13.8 7.5 16.2 7 16.2 Open-drain driving 1 1 24 24 24 2 2 2 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E ns 102 2.3 1 ns 4.7 1.2 4.5 36 10 7 4.5 1.1 5.3 45 208 UNIT 5.8 3 9.5 Push-pull driving Max data rate 260 9.6 3.2 Push-pull driving tSK(O) 4.7 2.9 Push-pull driving Open-drain driving B-port fall time 8.8 200 Push-pull driving tfB MIN MAX 4.4 1.9 Push-pull driving Open-drain driving MIN MAX 6.8 Push-pull driving tPHL VCCB = 5 V ± 0.5 V 4.6 2.9 Push-pull driving Open-drain driving MAX VCCB = 3.3 V ± 0.3 V ns ns ns ns Mbps 9 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 6.11 Switching Characteristics: VCCA = 2.5 V ± 0.2 V over recommended operating free-air temperature range, VCCA = 2.5 V ± 0.2 V (unless otherwise noted) FROM (INPUT) TO (OUTPUT) VCCB = 2.5 V ± 0.2 V MIN Push-pull driving tPHL A B tPLH Open-drain driving A ten OE A or B tdis OE A or B tPLH Open-drain driving 43 trA A-port rise time trB B-port rise time tfA A-port fall time tfB B-port fall time tSK(O) Channel-to-channel skew Max data rate 6.3 250 1.8 4.7 170 6 36 206 3.4 2.1 4.2 27 37 140 1.2 190 4 0.7 27 200 50 40 200 ns 35 ns 2.8 7.4 2.6 6.6 1.8 5.6 Open-drain driving 34 149 28 121 24 89 Push-pull driving 3.2 8.3 2.9 7.2 2.4 6.1 Open-drain driving 35 151 24 112 12 64 Push-pull driving 1.9 5.7 1.9 5.5 1.8 5.3 Open-drain driving 4.4 6.9 4.3 6.2 4.2 5.8 Push-pull driving 2.2 7.8 2.4 6.7 2.6 6.6 Open-drain driving 5.1 8.8 5.4 9.4 5.4 10.4 Push-pull driving Open-drain driving Submit Documentation Feedback 1 1 24 24 24 2 2 2 ns 103 Push-pull driving 1 ns 4.3 1.6 200 5.8 4.4 3.6 2.6 UNIT MIN MAX 4.1 2.5 44 MAX VCCB = 5 V ± 0.5 V 3.3 2 3 Push-pull driving Open-drain driving MIN 3.5 Push-pull driving B MAX VCCB = 3.3 V ± 0.3 V 3.2 1.7 Push-pull driving Open-drain driving tPHL 10 TEST CONDITIONS ns ns ns ns ns Mbps Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 6.12 Switching Characteristics: VCCA = 3.3 V ± 0.3 V over recommended operating free-air temperature range, VCCA = 3.3 V ± 0.3 V (unless otherwise noted) FROM (INPUT) TO (OUTPUT) TEST CONDITIONS VCCB = 3.3 V ± 0.3 V MIN Push-pull driving tPHL A B tPLH Open-drain driving B A ten OE A or B tdis OE A or B tPLH Open-drain driving 36 trA A-port rise time trB B-port rise time tfA A-port fall time tfB B-port fall time tSK(O) Channel-to-channel skew Max data rate 204 1 124 28 139 1 165 97 2.6 3 200 40 200 ns 35 ns 2.3 5.6 1.9 4.8 Open-drain driving 25 116 19 85 Push-pull driving 2.5 6.4 2.1 7.4 Open-drain driving 26 116 14 72 2 5.4 1.9 5 Open-drain driving 4.3 6.1 4.2 5.7 Push-pull driving 2.3 7.4 2.4 7.6 5 7.6 4.8 8.3 Open-drain driving 1 Push-pull driving Open-drain driving 1 24 24 2 2 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E ns 105 Push-pull driving Push-pull driving ns 3.3 2.5 3 4.6 4.4 2.5 Push-pull driving Open-drain driving 3.1 1.4 4.2 Push-pull driving tPHL 4.2 UNIT MIN MAX 2.4 1.3 Push-pull driving Open-drain driving MAX VCCB = 5 V ± 0.5 V ns ns ns ns ns Mbps 11 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 700 700 600 600 Low-Level Output Voltage (mV) Low-Level Output Voltage (mV) 6.13 Typical Characteristics 500 400 300 200 VCCB = 2.7 V VCCB = 3.3 V VCCB = 5 V 100 500 400 300 200 100 VCCB = 3.3 V VCCB = 5 V 0 0 0 2 4 VCCA = 1.8 V 6 8 10 12 14 Low-Level Current (mA) 16 18 20 0 2 4 D001 VIL(A) = 150 mV 6 8 10 12 14 Low-Level Current (mA) VCCA = 2.7 V Figure 1. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) 16 18 20 D003 VIL(A) = 150 mV Figure 2. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) Low-Level Output Voltage (mV) 700 600 500 400 300 200 100 VCCB = 3.3 V 0 0 2 4 6 8 10 12 14 Low-Level Current (mA) VCCA = 3.3 V 16 18 20 D002 VIL(A) = 150 mV Figure 3. Low-Level Output Voltage (VOL(Ax)) vs Low-Level Current (IOL(Ax)) 12 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 7 Parameter Measurement Information 7.1 Load Circuits VCCI VCCI VCCO VCCO DUT DUT IN IN OUT 15 pF OUT 15 pF 1 M Figure 4. Data Rate, Pulse Duration, Propagation Delay, Output Rise-Time and Fall-Time Measurement Using a Push-Pull Driver 1 M Figure 5. Data Rate, Pulse Duration, Propagation Delay, Output Rise-Time and Fall-Time Measurement Using an Open-Drain Driver 2 × VCCO 50 k From Output Under Test 15 pF S1 Open 50 k TEST S1 tPZL / tPLZ (tdis) 2 × VCCO tPHZ / tPZH (ten) Open Figure 6. Load Circuit for Enable-Time and Disable-Time Measurement 1. 2. 3. 4. tPLZ and tPHZ are the same as tdis. tPZL and tPZH are the same as ten. VCCI is the VCC associated with the input port. VCCO is the VCC associated with the output port. Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 13 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 7.2 Voltage Waveforms tw VCCI Input VCCI VCCI / 2 VCCI / 2 0V Input VCCI / 2 VCCI / 2 tPLH 0V tPHL VCCO / 2 Output 0.1 × VCCO tr Figure 7. Pulse Duration 0.9 × VCCO VOH VCCO / 2 VOL tf Figure 8. Propagation Delay Times VCCA VCCA / 2 OE input VCCA / 2 0V tPLZ tPZL VOH Output Waveform 1 S1 at 2 × VCCO VCCO / 2 VOH × 0.1 (see Note 2) tPHZ tPZH Output Waveform 2 S1 at GND (see Note 2) VOL VOH × 0.9 VOH VCCO / 2 0V Figure 9. Enable and Disable Times space space 1. CL includes probe and jig capacitance. 2. Waveform 1 in Figure 9 is for an output with internal such that the output is high, except when OE is high (see Figure 6). Waveform 2 in Figure 9 is for an output with conditions such that the output is low, except when OE is high. 3. All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns. 4. The outputs are measured one at a time, with one transition per measurement. 5. tPLZ and tPHZ are the same as tdis. 6. tPZL and tPZH are the same as ten. 7. tPLH and tPHL are the same as tpd. 8. VCCI is the VCC associated with the input port. 9. VCCO is the VCC associated with the output port. 14 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 8 Detailed Description 8.1 Overview The TXS0104E device is a directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.65 V to 3.6 V, while the B port can accept I/O voltages from 2.3 V to 5.5 V. The device is a pass gate architecture with edge rate accelerators (one shots) to improve the overall data rate. 10-kΩ pullup resistors, commonly used in open drain applications, have been conveniently integrated so that an external resistor is not needed. While this device is designed for open drain applications, the device can also translate push-pull CMOS logic outputs. 8.2 Functional Block Diagram VccB VccA OE One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A1 B1 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A2 B2 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A3 B3 One Shot Accelerator One Shot Accelerator Gate Bias 10 kO 10 kO A4 B4 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 15 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 8.3 Feature Description 8.3.1 Architecture The TXS0104E architecture (see Figure 10) does not require a direction-control signal in order to control the direction of data flow from A to B or from B to A. VCCB VCCA T1 One-shot One-shot 10 kΩ T2 10 kΩ Gate Bias A B Figure 10. Architecture of a TXS01xx Cell Each A-port I/O has an internal 10-kΩ pullup resistor to VCCA, and each B-port I/O has an internal 10-kΩ pullup resistor to VCCB. The output one-shots detect rising edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T2) for a short duration which speeds up the low-to-high transition. 8.3.2 Input Driver Requirements The fall time (tfA, tfB) of a signal depends on the output impedance of the external device driving the data I/Os of the TXS0104E device. Similarly, the tPHL and maximum data rates also depend on the output impedance of the external driver. The values for tfA, tfB, tPHL, and maximum data rates in the data sheet assume that the output impedance of the external driver is less than 50 Ω. 8.3.3 Power Up During operation, ensure that VCCA ≤ VCCB at all times. During power-up sequencing, VCCA ≥ VCCB does not damage the device, so any power supply can be ramped up first. 8.3.4 Enable and Disable The TXS0104E device has an OE input that disables the device by setting OE low, which places all I/Os in the high-impedance state. The disable time (tdis) indicates the delay between the time when the OE pin goes low and when the outputs actually enter the high-impedance state. The enable time (ten) indicates the amount of time the user must allow for the one-shot circuitry to become operational after the OE pin is taken high. 8.3.5 Pullup and Pulldown Resistors on I/O Lines Each A-port I/O has an internal 10-kΩ pullup resistor to VCCA, and each B-port I/O has an internal 10-kΩ pullup resistor to VCCB. If a smaller value of pullup resistor is required, an external resistor must be added from the I/O to VCCA or VCCB (in parallel with the internal 10-kΩ resistors). 8.4 Device Functional Modes The TXS0104E device has two functional modes, enabled and disabled. To disable the device set the OE input low, which places all I/Os in a high impedance state. Setting the OE input high will enable the device. 16 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TXS0104E device can be used in level-translation applications for interfacing devices or systems operating at different interface voltages with one another. The TXS0104E device is ideal for use in applications where an open-drain driver is connected to the data I/Os. The TXS0104E device can also be used in applications where a push-pull driver is connected to the data I/Os, but the TXB0104 device might be a better option for such pushpull applications. 9.2 Typical Application 1.8 V 3.3 V 0.1 µF VCCA 0.1 µF VCCB OE 1.8-V System Controller 3.3-V System TXS0104 A1 A2 A3 A4 Data GND B1 B2 B3 B4 Data Figure 11. Application Schematic 9.2.1 Design Requirements For this design example, use the parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 1.65 to 3.6 V Output voltage range 2.3 to 5.5 V 9.2.2 Detailed Design Procedure To begin the design process, determine the following: • • Input voltage range – Use the supply voltage of the device that is driving the TXS0104E device to determine the input voltage range. For a valid logic high the value must exceed the VIH of the input port. For a valid logic low the value must be less than the VIL of the input port. Output voltage range – Use the supply voltage of the device that the TXS0104E device is driving to determine the output voltage range. – Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 17 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com The TXS0104E device has 10-kΩ internal pullup resistors. External pullup resistors can be added to reduce the total RC of a signal trace if necessary. • An external pull down resistor decreases the output VOH and VOL. Use Equation 1 to calculate the VOH as a result of an external pull down resistor. VOH = VCCx × RPD / (RPD + 10 kΩ) (1) where VCCx is the supply voltage on either VCCA or VCCB RPD is the value of the external pull down resistor 9.2.3 Application Curve 2 V/div 5V 2V 100 ns/div VCCA = 1.8 V VCCB = 5 V Figure 12. Level-Translation of a 2.5-MHz Signal 18 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E TXS0104E www.ti.com SCES651F – JUNE 2006 – REVISED DECEMBER 2014 10 Power Supply Recommendations The TXS0104E device uses two separate configurable power-supply rails, VCCA and VCCB. VCCB accepts any supply voltage from 2.3 V to 5.5 V and VCCA accepts any supply voltage from 1.65 V to 3.6 V as long as Vs is less than or equal to VCCB. The A port and B port are designed to track VCCA and VCCB respectively allowing for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. The TXS0104E device does not require power sequencing between VCCA and VCCB during power-up so the power-supply rails can be ramped in any order. A VCCA value greater than or equal to VCCB (VCCA ≥ VCCB) does not damage the device, but during operation, VCCA must be less than or equal to VCCB (VCCA ≤ VCCB) at all times. The output-enable (OE) input circuit is designed so that it is supplied by VCCA and when the (OE) input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state of the outputs during power up or power down, the OE input pin must be tied to GND through a pulldown resistor and must not be enabled until VCCA and VCCB are fully ramped and stable. The minimum value of the pulldown resistor to ground is determined by the current-sourcing capability of the driver. 11 Layout 11.1 Layout Guidelines To • • • • ensure reliability of the device, following common printed-circuit board layout guidelines is recommended. Bypass capacitors should be used on power supplies. Short trace lengths should be used to avoid excessive loading. PCB signal trace-lengths must be kept short enough so that the round-trip delay of any reflection is less than the one shot duration, approximately 30 ns, ensuring that any reflection encounters low impedance at the source driver. Placing pads on the signal paths for loading capacitors or pullup resistors to help adjust rise and fall times of signals depending on the system requirements 11.2 Layout Example LEGEND VIA to Power Plane Polygonal Copper Pour VIA to GND Plane (Inner Layer) VCCA VCCB Bypass Capacitors Pads on signal paths for potential rise and fall time adjustments To Controller To System 1 VCCA VCCB 14 2 A1 B1 13 3 A2 B2 12 4 A3 B3 11 To Controller 5 A4 B4 10 To System To Controller 6 NC NC 9 To System 7 GND OE 8 To Controller To System Keep OE low until VCCA and VCCB are powered up Figure 13. TXS0104E Layout Example Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E 19 TXS0104E SCES651F – JUNE 2006 – REVISED DECEMBER 2014 www.ti.com 12 Device and Documentation Support 12.1 Trademarks NanoFree is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 20 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TXS0104E PACKAGE OPTION ADDENDUM www.ti.com 25-Oct-2016 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TXS0104ED ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EDG4 ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EDR ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EDRG4 ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 TXS0104E TXS0104EPWR ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 YF04E TXS0104EPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 YF04E TXS0104ERGYR ACTIVE VQFN RGY 14 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 YF04E TXS0104ERGYRG4 ACTIVE VQFN RGY 14 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 YF04E TXS0104EYZTR ACTIVE DSBGA YZT 12 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 (2HN ~ 2N ~ 2N7) TXS0104EZXUR ACTIVE BGA MICROSTAR JUNIOR ZXU 12 2500 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 YF04E (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 25-Oct-2016 Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF TXS0104E : • Automotive: TXS0104E-Q1 NOTE: Qualified Version Definitions: • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 1-Nov-2016 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TXS0104EDR SOIC SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) D 14 2500 330.0 16.4 6.5 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 9.0 2.1 8.0 16.0 Q1 TXS0104EPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 TXS0104ERGYR VQFN RGY 14 3000 330.0 12.4 3.75 3.75 1.15 8.0 12.0 Q1 TXS0104EYZTR DSBGA YZT 12 3000 180.0 8.4 1.49 1.99 0.75 4.0 8.0 Q2 TXS0104EZXUR BGA MI CROSTA R JUNI OR ZXU 12 2500 330.0 8.4 2.3 2.8 1.0 4.0 8.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 1-Nov-2016 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TXS0104EDR SOIC D 14 2500 367.0 367.0 38.0 TXS0104EPWR TSSOP PW 14 2000 367.0 367.0 35.0 TXS0104ERGYR VQFN RGY 14 3000 367.0 367.0 35.0 TXS0104EYZTR DSBGA YZT 12 3000 182.0 182.0 20.0 TXS0104EZXUR BGA MICROSTAR JUNIOR ZXU 12 2500 336.6 336.6 28.6 Pack Materials-Page 2 D: Max = 1.89 mm, Min = 1.83 mm E: Max = 1.39 mm, Min = 1.33 mm IMPORTANT NOTICE FOR TI DESIGN INFORMATION AND RESOURCES Texas Instruments Incorporated (‘TI”) technical, application or other design advice, services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to assist designers who are developing applications that incorporate TI products; by downloading, accessing or using any particular TI Resource in any way, you (individually or, if you are acting on behalf of a company, your company) agree to use it solely for this purpose and subject to the terms of this Notice. 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