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TXS0206YFPR

TXS0206YFPR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    DSBGA20

  • 描述:

    Voltage Level Translator Bidirectional 1 Circuit 4 Channel 60Mbps 20-DSBGA (1.96x1.56)

  • 数据手册
  • 价格&库存
TXS0206YFPR 数据手册
TXS0206 www.ti.com SCES697C – AUGUST 2009 – REVISED JANUARY 2010 MMC, SD CARD, Memory Stick™ VOLTAGE-TRANSLATION TRANSCEIVER WITH ESD PROTECTION AND EMI FILTERING Check for Samples: TXS0206 FEATURES 1 • 2 • • • Level Translator – VCCA and VCCB Range of 1.1 V to 3.6 V – Fast Propagation Delay (4 ns Max When Translating Between 1.8 V and 3 V) Integrated EMI Filtering and ESD Protection Circuitry ESD Protection Exceeds JESD 22 (A Port) – 2500-V Human-Body Model (A114-B) – 250-V Machine Model (A115-A) – 1500-V Charged-Device Model (C101) ±8-kV Contact Discharge IEC 61000-4-2 ESD (B-port) YFP PACKAGE (TOP VIEW) 1 2 3 4 A B C D E TERMINAL ASSIGNMENTS 1 2 3 4 A DAT2A VCCA WP DAT2B B DAT3A CD VCCB DAT3B C CMDA GND GND CMDB D DAT0A CLKA CLKB DAT0B E DAT1A CLK-f EN DAT1B DESCRIPTION/ORDERING INFORMATION The TXS0206 is a level shifter for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It includes a high-speed level translator along with ESD protection and EMI filtering circuitry. The voltage-level translator has two supply voltage pins. VCCA as well as VCCB can be operated over the full range of 1.1 V to 3.6 V. The TXS0206 enables system designers to easily interface applications processors or digital basebands to memory cards and SDIO peripherals operating at a different I/O voltage level. Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206 incorporates ±8-kV Contact Discharge protection on the card side. The TXS0206 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings. Memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206 an ideal choice for these applications. ORDERING INFORMATION (1) TA –40°C to 85°C (1) (2) (3) PACKAGE (2) WCSP – YFP (Pb-free) Tape and reel ORDERABLE PART NUMBER TXS0206YFPR TOP-SIDE MARKING (3) _ _ _3T_ For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. YFP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, •= Pb-free). 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated TXS0206 SCES697C – AUGUST 2009 – REVISED JANUARY 2010 www.ti.com REFERENCE DESIGN VCCA VCCB C3 0.1 µF U1A VCCB C4 0.1 µF C1 0.1 µF J1 U2 VDDA DAT0 DAT1 DAT2 DAT3 CMD CLK CLKin GND WP A2 D1 E1 A1 B1 C1 D2 E2 C2 C3 VCCA VCCB DAT0A DAT1A DAT2A DAT3A CMDA CLKA CLK-f B3 D4 DAT0B DAT0B DAT1B E4 DAT1B DAT2B A4 DAT2B DAT3B B4 DAT3B C4 CMDB CMDB D3 CLKB CLKB GND A3 WP WP B2 CD CD GND CD Processor SD/SDIO MMC DAT2B DAT3B CMDB CLKB DAT0B DAT1B CD WP 0 1 2 3 4 5 6 7 8 9 10 11 12 13 DAT2 DAT3 CMD VSS1 VDD CLK VSS2 DAT0 DAT1 WP/CD (Physical) CD (Physical) GND GND WP (Physical) 54794-0978 SD/SDIO Card Connector TXS0206 Figure 1. Interfacing With SD/SDIO Card 2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): TXS0206 TXS0206 www.ti.com SCES697C – AUGUST 2009 – REVISED JANUARY 2010 VCCA VCCB C3 0.1 µF U1A VCCB C4 0.1 µF C1 0.1 µF U2 VDDA DAT0 DAT1 DAT2 DAT3 CMD CLK CLKin GND A2 D1 E1 A1 B1 C1 D2 E2 C2 C3 VCCA VCCB DAT0A CMDB 2 DAT1B 3 E4 DAT1B DAT1B A4 DAT2B DAT2B B4 DAT3B DAT3B DAT0B 4 DAT2B 5 CD 6 C4 CMDB CMDB D3 CLKB CLKB DAT3B 7 CLKB 8 DAT0B DAT3A CMDA CLKA CLK-f GND 9 GND CD CD Memory Stick™ Controller D4 DAT0B DAT1A DAT2A 1 B3 B2 CD 10 TXS0206 VSS BS DATA1 (see Note) DATA0/SDIO (see Note) DATA2 (see Note) INS DATA3 (see Note) SCLK VCC VSS Memory Stick™ Connector NOTE: The TXS0206 has integrated pullup resistor values that dynamically change value depending on whether a low or high signal is being transmitted through the device. When the output is low, the TXS0206 internal pullup value is 40 kΩ, and when the output is high, the internal pullup value change to a value of 4 kΩ. For MSA and MSH Memory Stick™ memory cards, to ensure that a valid VIH (i.e., receiver input voltage high) is achieved, the internal pulldown resistors for these memory cards are not smaller than a 10-kΩ value. See the Application Information section of this data sheet, which explains the impact of adding too heavy (i.e.,
TXS0206YFPR 价格&库存

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