UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
DUAL SCHOTTKY DIODE BRIDGE
FEATURES
D Monolithic Eight-Diode Array
D Exceptional Efficiency
D Low Forward Voltage
D Fast Recovery Time
D High Peak Current
D Small Size
DESCRIPTION
This eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
−55°C to 125°C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for −25°C to 125°C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0°C to 70°C temperature
range.
AVAILABLE OPTIONS
Packaged Devices
TA = TJ
SOIC Wide (DW)
DIL (J)
DIL (N)
−55°C to 125°C
UC1610DW
UC1610J
UC1610N
−25°C to 125°C
UC2610DW
UC2610J
UC2610N
0°C to 70°C
UC3610DW
UC3610J
UC3610N
THERMAL INFORMATION
PACKAGE
SOIC (DW) 16 pin
θja
50 −
100(1)
θjc
27
DIP (J) 8 pin
125 − 160
20(2)
DIP (N) 8 pin
103(1)
50
NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When
resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm
trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the
end of each trace.
2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case
(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.
For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,
10°C/W.
Copyright © 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
www.ti.com
1
UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
N OR J PACKAGE
TOP VIEW
DW PACKAGE
TOP VIEW
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†}
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ Consult packaging section of databook for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ,
(except as noted)
PARAMETER
Forward voltage drop
Leakage current
TEST CONDITIONS
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
TJ = 100°C
MIN
TYP
MAX
UNITS
0.35
0.5
0.7
0.8
1.0
1.3
V
V
0.01
0.1
mA
0.1
1.0
mA
Reverse recovery
0.5 A forward to 0.5 A reverse
15
Forward recovery
1 A forward to 1.1 V recovery
30
ns
Junction capacitance
VR = 5 V
70
pF
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
2
www.ti.com
ns
UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
APPLICATION INFORMATION
FORWARD CURRENT
vs
VOLTAGE
1000
5.0
500
3.0
2.0
300
200
1.0
T J = 125 °C
100
Forward Current − A
50
30
20
10
5
0.3
0.2
0.05
0.03
0.02
T J = 25 °C
0.005
3
2
T J = 125 °C
0.003
0.002
0.001
1
0
10
20
30
40
0
50
0.2 0.4
0.6 0.8
1.0
1.2
1.4 1.6
1.8 2.0
Forward Voltage − V
Reverse Voltage − V
Figure 1
Figure 2
REVERSE RECOVERY CHARACTERISTICS
FORWARD RECOVERY CHARACTERISTICS
I F = 0.5 A
TA= 25 °C
1.1 V
Diode Voltage 1.0 V/DIV
Diode Current 200 mA DIV
T J = −55 °C
0.1
0.01
T J = 25 °C
T J = 75 °C
0.5
0A
IR= 0.5 A
TA= 25 °C
Diode Voltage
TFR
(6 ns)
0A
IF = 1 A
Diode Current 500 mA DIV
Leakage Current − μA
REVERSE CURRENT
vs
VOLTAGE
Diode Current
TRR
(4.6 ns)
0A
Time, 2 ns/DIV
Time, 2 ns/DIV
Figure 4
Figure 3
www.ti.com
3
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
UC2610N
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
UC2610N
UC3610DW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
0 to 70
UC3610DW
UC3610DWTR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
0 to 70
UC3610DW
UC3610N
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
UC3610N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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