UC3610DWTRG4

UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors. The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for −55°C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for −25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0°C to 70°C temperature range. AVAILABLE OPTIONS Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) −55°C to 125°C UC1610DW UC1610J UC1610N −25°C to 125°C UC2610DW UC2610J UC2610N 0°C to 70°C UC3610DW UC3610J UC3610N THERMAL INFORMATION PACKAGE SOIC (DW) 16 pin θja 50 − 100(1) θjc 27 DIP (J) 8 pin 125 − 160 20(2) DIP (N) 8 pin 103(1) 50 NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the end of each trace. 2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case (mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils. For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array, 10°C/W. Copyright © 2001, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. www.ti.com 1 UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 N OR J PACKAGE TOP VIEW DW PACKAGE TOP VIEW absolute maximum ratings over operating free-air temperature (unless otherwise noted)†} Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Consult packaging section of databook for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER Forward voltage drop Leakage current TEST CONDITIONS IF = 100 mA IF = 1 A VR = 40 V VR = 40 V, TJ = 100°C MIN TYP MAX UNITS 0.35 0.5 0.7 0.8 1.0 1.3 V V 0.01 0.1 mA 0.1 1.0 mA Reverse recovery 0.5 A forward to 0.5 A reverse 15 Forward recovery 1 A forward to 1.1 V recovery 30 ns Junction capacitance VR = 5 V 70 pF NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. 2 www.ti.com ns UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 APPLICATION INFORMATION FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 300 200 1.0 T J = 125 °C 100 Forward Current − A 50 30 20 10 5 0.3 0.2 0.05 0.03 0.02 T J = 25 °C 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage − V Reverse Voltage − V Figure 1 Figure 2 REVERSE RECOVERY CHARACTERISTICS FORWARD RECOVERY CHARACTERISTICS I F = 0.5 A TA= 25 °C 1.1 V Diode Voltage 1.0 V/DIV Diode Current 200 mA DIV T J = −55 °C 0.1 0.01 T J = 25 °C T J = 75 °C 0.5 0A IR= 0.5 A TA= 25 °C Diode Voltage TFR (6 ns) 0A IF = 1 A Diode Current 500 mA DIV Leakage Current − μA REVERSE CURRENT vs VOLTAGE Diode Current TRR (4.6 ns) 0A Time, 2 ns/DIV Time, 2 ns/DIV Figure 4 Figure 3 www.ti.com 3 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) UC2610N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2610N UC3610DW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-2-260C-1 YEAR 0 to 70 UC3610DW UC3610DWTR ACTIVE SOIC DW 16 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR 0 to 70 UC3610DW UC3610N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3610N (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of