SLUS338A – JUNE 1993 – REVISED MAY 2001
FEATURES
D Matched, Four-Diode Monolithic Array
D High Peak Current
D Low-Cost MINIDIP Package
D Low-Forward Voltage
D Parallelable for Lower VF or Higher IF
D Fast Recovery Time
D Military Temperature Range Available
DESCRIPTION
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55°C to
125°C environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0°C to 70°C ambient
temperature range.
AVAILABLE OPTIONS
Packaged Devices
TA = TJ
SOIC Wide (DW)
DIL (J)
DIL (N)
–55°C to 125°C
UC1611DW
UC1611J
UC1611N
0°C to 70°C
UC3611DW
UC3611J
UC3611N
Copyright 2001, Texas Instruments Incorporated
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1
SLUS338A – JUNE 1993 – REVISED MAY 2001
DW PACKAGE
(TOP VIEW)
J OR N PACKAGE
(TOP VIEW)
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
0.3
TYP
For ard voltage
Forward
oltage drop
IF = 100 mA
IF = 1 A
Leakage current
VR = 40 V
VR = 40 V,
Reverse recovery
0.5 A forward to 0.5 A reverse
20
Forward recovery
1 A forward to 1.1 V recovery
40
TJ = 100°C
Junction capacitance
MAX
0.7
V
0.9
1.2
V
0.01
0.1
mA
0.1
1.0
mA
VR = 5V
100
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
2
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UNITS
0.4
ns
ns
pF
SLUS338A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
REVERSE CURRENT
vs
VOLTAGE
FORWARD CURRENT
vs
VOLTAGE
1000
5.0
500
3.0
2.0
1.0
T J = 125 °C
100
Forward Current – A
Leakage Current – µA
300
200
50
30
20
10
5
0.3
0.2
T J = –55 °C
0.1
0.05
0.03
0.02
T J = 25 °C
0.01
T J = 25 °C
T J = 75 °C
0.5
0.005
3
2
T J = 125 °C
0.003
0.002
0.001
1
0
10
20
30
40
50
Reverse Voltage – V
0
0.2 0.4
0.6 0.8
1.0
1.2
1.4 1.6
1.8 2.0
Forward Voltage – V
Figure 1
Figure 2
Figure 3. Clamp Diodes – PWMs and Drivers
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3
SLUS338A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
Figure 4. Transformer Coupled Drive Circuits
Figure 5. Linear Regulations
4
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Mar-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
5962-90538012A
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596290538012A
UC1611L/
883B
5962-9053801PA
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
9053801PA
UC1611
5962-9053801V2A
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
59629053801V2A
UC1611L
QMLV
5962-9053801VPA
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
9053801VPA
UC1611
Samples
UC1611J
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
UC1611J
Samples
UC1611J883B
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
9053801PA
UC1611
Samples
UC1611L883B
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596290538012A
UC1611L/
883B
UC3611DW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
0 to 70
UC3611DW
Samples
UC3611J
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
0 to 70
UC3611J
Samples
UC3611N
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
UC3611N
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
Samples
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Mar-2023
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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