UCC23513QDWYRQ1

UCC23513-Q1 UCC23513-Q1 SLUSDT9B – MAY 2020 – REVISED MARCH 2021 SLUSDT9B – MAY 2020 – REVISED MARCH 2021 www.ti.com UCC23513-Q1 4-A Source, 5-A Sink, 5.7-kVRMS Reinforced, Opto-Compatible, Single-Channel Isolated Gate Driver 1 Features 3 Description • • The UCC23513-Q1 driver are opto-compatible, singlechannel, isolated gate drivers for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.7-kVRMS isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23513-Q1 can drive both low side and high side power FETs and bring significant performance and reliability upgrades over opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. High performance and reliability makes them ideal for use in automotivemotor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not supported by traditional optocouplers. • • • • • • • • • • • • • • • AEC-Q100 qualified for automotive applications 5.7-kVRMS single channel isolated gate driver with opto-compatible input Pin-to-pin, drop in upgrade for opto isolated gate drivers 4.5-A source / 5.3-A sink, peak output current Maximum 33-V output driver supply voltage 8-V (B) or 12-V VCC UVLO Options Rail-to-rail output 105-ns (maximum) propagation delay 25-ns (maximum) part-to-part delay matching 35-ns (maximum) pulse width distortion 150-kV/μs (minimum) common-mode transient immunity (CMTI) Isolation barrier life >50 Years 13-V reverse polarity voltage handling capability on input stage supporting interlock Stretched SO-6 package with >8.5-mm creepage and clearance Operating junction temperature, TJ: –40°C to +150°C Functional Safety-Capable – Documentation available to aid functional safety system design Safety-related certifications: – 8000-VPK reinforced isolation per DIN V VDE V0884-11: 2017-01 (In Progress) – 5.7-kVRMS isolation for 1 minute per UL 1577 2 Applications Traction Inverter for EVs On-board charger and DC charging station HVAC Heaters Industrial motor-control drives PART NUMBER UCC23513-Q1 (1) PACKAGE BODY SIZE (NOM) Stretched SO-6 7.5 mm x 4.68 mm For all available packages, see the orderable addendum at the end of the data sheet. ANODE 1 NC 2 ISOLATION • • • • • Device Information (1) 6 VCC UVLO e 5 VOUT BARRIER CATHODE 3 4 VEE Functional Block Diagram An©IMPORTANT NOTICEIncorporated at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, Copyright 2021 Texas Instruments Submit Document Feedback intellectual property matters and other important disclaimers. PRODUCTION DATA. 1 UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Function.....................................3 Pin Functions.................................................................... 3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................4 6.4 Thermal Information....................................................4 6.5 Power Ratings.............................................................5 6.6 Insulation Specifications............................................. 6 6.7 Safety-Related Certifications...................................... 7 6.8 Safety Limiting Values.................................................7 6.9 Electrical Characteristics.............................................8 6.10 Switching Characteristics..........................................9 6.11 Insulation Characteristics Curves............................10 6.12 Typical Characteristics............................................ 11 7 Parameter Measurement Information.......................... 14 7.1 Propagation Delay, Rise Time and Fall Time............ 14 7.2 IOH and IOL testing.....................................................14 7.3 CMTI Testing.............................................................14 8 Detailed Description......................................................15 8.1 Overview................................................................... 15 8.2 Functional Block Diagram......................................... 15 8.3 Feature Description...................................................16 8.4 Device Functional Modes..........................................20 9 Application and Implementation.................................. 21 9.1 Application Information............................................. 21 9.2 Typical Application.................................................... 22 10 Power Supply Recommendations..............................29 11 Layout........................................................................... 30 11.1 Layout Guidelines................................................... 30 11.2 Layout Example...................................................... 31 11.3 PCB Material........................................................... 34 12 Mechanical, Packaging, and Orderable Information.................................................................... 35 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (December 2020) to Revision B (March 2021) Page • Marketing status changed from Advance Information to Production Data .........................................................1 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 5 Pin Configuration and Function 1 ANODE 2 NC 3 CATHODE 6 VCC 5 VOUT 4 VEE Figure 5-1. UCC23513-Q1 Package SO-6 Top View Pin Functions PIN NAME NO. ANODE 1 CATHODE NC TYPE(1) DESCRIPTION I Anode 3 I Cathode 2 - No Connection VCC 6 P Positive output supply rail VEE 4 P Negative output supply rail VOUT 5 O Gate-drive output (1) P = Power, G = Ground, I = Input, O = Output Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 3 UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 6 Specifications 6.1 Absolute Maximum Ratings Over operating free air temperature range (unless otherwise noted)(1) Average Input Current IF(AVG) Peak Transient Input Current IF(TRAN) 8.5 mm CPG External Creepage(1) Shortest terminal-to-terminal distance across the package surface >8.5 mm DTI Distance through the insulation Minimum internal gap (internal clearance) >17 µm CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 >600 V Material Group According to IEC 60664-1 I Rated mains voltage ≤ 600 VRMS I-IV Rated mains voltage ≤ 1000 VRMS I-III Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 Maximum isolation working voltage AC voltage (sine wave); time-dependent dielectric 1500 breakdown (TDDB) test; see Figure 1 VRMS DC voltage 2121 VDC Overvoltage category per IEC 60664-1 DIN V VDE 0884-11 (VDE V 0884-11)(2) VIORM VIOWM VPK VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 sec (qualification) VTEST = 1.2 × VIOTM, t = 1 s (100% production) 8000 VPK VIOSM Maximum surge isolation voltage(3) Test method per IEC 62368, 1.2/50 ms waveform, 8000 VTEST = 1.6 x VIOSM = 12800 VPK (qualification) VPK Method a: After I/O safety test subgroup 2/3,Vini = VIOTM, ≤5 tini = 60 s; Vpd(m) = 1.2 x VIORM = 1800 VPK, tm = 10 s Apparent charge(4) qpd Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 x VIORM = 2400 VPK, tm = 10 s ≤5 pC Method b1: At routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s; ≤5 Vpd(m) = 1.875 x VIORM = 2813 VPK, tm = 1 s Barrier capacitance, input to output(5) CIO Insulation resistance, input to output(5) RIO VIO = 0.4 x sin (2πft), f = 1 MHz 0.5 VIO = 500 V, TA = 25°C >1012 VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011 VIO = 500 V at TS = 150°C >109 Pollution degree 2 Climatic category 40/125/21 pF Ω UL 1577 VISO (1) (2) (3) (4) (5) 6 Withstand isolation voltage VTEST = VISO = 5700 VRMS, t = 60 s (qualification), VTEST = 1.2 x VISO = 6840 VRMS, t = 1 s (100% 5700 production) VRMS Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed-circuit board are used to help increase these specifications. This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier. Apparent charge is electrical discharge caused by a partial discharge (pd). All pins on each side of the barrier tied together creating a two-pin device. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 6.7 Safety-Related Certifications VDE UL Certified according to DIN V VDE V 0884-11: 2017-01 Certified according to UL 1577 Component Recognition Program Reinforced insulation Maximum transient isolation voltage, 8000 VPK; Maximum repetitive peak isolation voltage, 2121 VPK; Maximum Single protection, 5700 VRMS surge isolation voltage, 8000 VPK Certification number: 40040142 Certification in progress File number: E181974 6.8 Safety Limiting Values PARAMETER IS Safety input, output, or supply current PS Safety input, output, or total power TS Maximum safety temperature(1) (1) TEST CONDITIONS MIN TYP MAX UNIT RqJA = 126°C/W, VI = 15 V, TJ = 150°C, TA = 25°C 50 RqJA = 126°C/W, VI = 30 V, TJ = 150°C, TA = 25°C 25 RqJA = 126°C/W, TJ = 150°C, TA = 25°C 750 mW 150 °C mA The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ , specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RqJA, in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter: TJ = TA + RqJA ´ P, where P is the power dissipated in the device. TJ(max) = TS = TA + RqJA ´ PS, where TJ(max) is the maximum allowed junction temperature. PS = IS ´ VI , where VI is the maximum supply voltage. Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 7 UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 6.9 Electrical Characteristics Unless otherwise noted, all typical values are at TA = 25°C, VCC–VEE= 15V, VEE= GND. All min and max specifications are at recommended operating conditions (TJ = -40C to 150°C, IF(on)= 7 mA to 16 mA, VEE= GND, VCC= 15 V to 30 V, VF(off)= –5V to 0.8V) PARAMETER TEST CONDITIONS MIN TYP MAX VOUT > 5 V, Cg = 1 nF 1.5 2.8 4 2.1 2.4 UNIT INPUT IFLH Input Forward Threshold Current Low to High VF Input Forward Voltage IF =10 mA 1.8 VF_HL Threshold Input Voltage High to Low V < 5 V, Cg = 1 nF 0.9 ΔVF/ΔT Temp Coefficient of Input Forward Voltage IF =10 mA VR Input Reverse Breakdown Voltage IR= 10 uA CIN Input Capacitance F = 0.5 MHz IOH High Level Peak Output Current IF = 10 mA, VCC =15V, CLOAD=0.18uF, CVDD=10uF, pulse width 150 kV/us. The e-diode input stage along with capacitive isolation technology gives UCC23513-Q1 several performance advantages over standard opto isolated gate drivers. They are as follows: 1. Since the e-diode does not use light emission for its operation, the reliability and aging characteristics of UCC23513-Q1 are naturally superior to those of standard opto isolated gate drivers. 2. Higher ambient operating temperature range of 125°C, compared to only 105°C for most opto isolated gate drivers 3. The e-diode forward voltage drop has less part-to-part variation and smaller variation across temperature. Hence, the operating point of the input stage is more stable and predictable across different parts and operating temperature. 4. Higher common mode transient immunity than opto isolated gate drivers 5. Smaller propagation delay than opto isolated gate drivers 6. Due to superior process controls achievable in capacitive isolation compared to opto isolation, there is less part-to-part skew in the prop delay, making the system design simpler and more robust 7. Smaller pulse width distortion than opto isolated gate drivers The signal across the isolation has an on-off keying (OOK) modulation scheme to transmit the digital data across a silicon dioxide based isolation barrier (see Figure 8-1). The transmitter sends a high-frequency carrier across the barrier to represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the signal after advanced signal conditioning and produces the output through a buffer stage. The UCC23513-Q1 also incorporates advanced circuit techniques to maximize the CMTI performance and minimize the radiated emissions from the high frequency carrier and IO buffer switching. Figure 8-2 shows conceptual detail of how the OOK scheme works. 8.2 Functional Block Diagram Receiver NC IF VBIAS Vclamp Cathode VCC UVLO RNMOS VEE Amplifier Oscillator ISOLATION Anode BARRIER Transmitter Demodulator ROH Level Shift / Pre driver VOUT ROL VEE Figure 8-1. Conceptual Block Diagram of a Isolated Gate Driver with an Opto Emulated Input Stage (SO6 pkg) Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 15 UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 IF IN Carrier signal through isolation barrier RX OUT Figure 8-2. On-Off Keying (OOK) Based Modulation Scheme 8.3 Feature Description 8.3.1 Power Supply Since the input stage is an emulated diode, no power supply is needed at the input. The output supply, VCC, supports a voltage range from 14V to 33V. For operation with bipolar supplies, the power device is turned off with a negative voltage on the gate with respect to the emitter or source. This configuration prevents the power device from unintentionally turning on because of current induced from the Miller effect. The typical values of the VCC and VEE output supplies for bipolar operation are 15V and -8V with respect to GND for IGBTs, and 20V and -5V for SiC MOSFETs. For operation with unipolar supply, the VCC supply is connected to 15V with respect to GND for IGBTs, and 20V for SiC MOSFETs. The VEE supply is connected to 0V. 8.3.2 Input Stage The input stage of UCC23513-Q1 is simply the e-diode and therefore has an Anode (Pin 1) and a Cathode (Pin 3). Pin 2 has no internal connection and can be left open or connected to ground. The input stage does not have a power and ground pin. When the e-diode is forward biased by applying a positive voltage to the Anode with respect to the Cathode, a forward current IF flows into the e-diode. The forward voltage drop across the e-diode is 2.1V (typ). An external resistor should be used to limit the forward current. The recommended range for the forward current is 7mA to 16mA. When IF exceeds the threshold current IFLH(2.8mA typ.) a high frequency signal is transmitted across the isolation barrier through the high voltage SiO2 capacitors. The HF signal is detected by the receiver and VOUT is driven high. See Section 9.2.2.1 for information on selecting the input resistor. The dynamic impedance of the e-diode is very small( IFLH) 0V - UVLOR Low ON ( (IF> IFLH) UVLOR - 33V High Table 8-3. Function Table for UCC23513-Q1 with VCC Falling e-diode VCC VOUT OFF (IF< IFLH) 0V - 33V Low ON (IF> IFLH) UVLOF- 0V Low ON ( (IF> IFLH) 33V - UVLOF High 8.4.1 ESD Structure Figure 8-6 shows the multiple diodes involved in the ESD protection components of the UCC23513-Q1 device. This provides pictorial representation of the absolute maximum rating for the device. VCC Anode 40V 20V VOUT 40V 2.5V 36V Cathode VEE Figure 8-6. ESD Structure 20 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated UCC23513-Q1 www.ti.com SLUSDT9B – MAY 2020 – REVISED MARCH 2021 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information UCC23513-Q1 is a single channel, isolated gate driver with opto-compatible input for power semiconductor devices, such as MOSFETs, IGBTs, or SiC MOSFETs. It is intended for use in applications such as motor control, industrial inverters, and switched-mode power supplies. It differs from standard opto isolated gate drivers as it does not have an LED input stage. Instead of an LED, it has an emulated diode (e-diode). To turn the e-diode "ON", a forward current in the range of 7mA to 16mA should be driven into the Anode. This will drive the gate driver output High and turn on the power FET. Typically, MCU's are not capable of providing the required forward current. Hence a buffer has to be used between the MCU and the input stage of UCC23513-Q1. Typical buffer power supplies are either 5V or 3.3V. A resistor is needed between the buffer and the input stage of the UCC23513-Q1 to limit the current. It is simple, but important to choose the right value of resistance. The resistor tolerance, buffer supply voltage tolerance and output impedance of the buffer, have to be considered in the resistor selection. This will ensure that the e-diode forward current stays within the recommended range of 7mA to 16mA. Detailed design recommendations are given in the Section 9.1. The current driven input stage offers excellent noise immunity that is need in high power motor drive systems, especially in cases where the MCU cannot be located close to the isolated gate driver. UCC23513-Q1 offers best in class CMTI performance of >150kV/us at 1500V common mode voltages. The e-diode is capable of 25mA continuous in the forward direction. The forward voltage drop of the e-diode has a very tight part to part variation (1.8V min to 2.4V max). The temperature coefficient of the forward drop is