UCC27200QDDARQ1

Product Folder Sample & Buy Technical Documents Support & Community Tools & Software UCC27200-Q1, UCC27201-Q1 SLUS822C – JUNE 2008 – REVISED AUGUST 2016 UCC2720x-Q1 120-V Boot, 3-A Peak, High-Frequency High-Side and Low-Side Driver 1 Features 3 Description • • The UCC2720x-Q1 family of high-frequency Nchannel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in halfbridge, full-bridge, two-switch forward, and activeclamp forward converters. The low-side and the highside gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other. 1 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device CDM ESD Classification Level C5 Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration Maximum Boot Voltage: 120 V Maximum VDD Voltage: 20 V On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode Greater than 1 MHz of Operation 20-ns Propagation Delay Times 3-A Sink, 3-A Source Output Currents 8-ns Rise and 7-ns Fall Time With 1000-pF Load 1-ns Delay Matching Specified from –40°C to 140°C (Junction Temperature) An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold. Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTLcompatible thresholds. Both devices are offered PowerPAD™ (DDA) package. • • • • • • the 8-pin SO Device Information(1) 2 Applications • in PART NUMBER UCC2720x-Q1 Power Supplies for Telecom, Datacom, and Merchant Markets Half-Bridge Applications and Full-Bridge Converters Isolated Bus Architecture Two-Switch Forward Converters Active-Clamp Forward Converters High-Voltage Synchronous-Buck Converters Class-D Audio Amplifiers PACKAGE SO PowerPAD (8) BODY SIZE (NOM) 4.89 mm × 3.90 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Application Diagram +12V +100V SECONDARY SIDE CIRCUIT VDD HB LI DRIVE HI CONTROL HI PWM CONTROLLER HO HS DRIVE LO LO UCC27200x-Q1 VSS ISOLATION AND FEEDBACK 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. UCC27200-Q1, UCC27201-Q1 SLUS822C – JUNE 2008 – REVISED AUGUST 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 5 5 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 7.2 7.3 7.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 11 11 11 12 8 Application and Implementation ........................ 13 8.1 Application Information............................................ 13 8.2 Typical Application .................................................. 19 9 Power Supply Recommendations...................... 22 10 Layout................................................................... 22 10.1 Layout Guidelines ................................................. 22 10.2 Layout Example .................................................... 23 10.3 Power Dissipation ................................................. 23 11 Device and Documentation Support ................. 25 11.1 11.2 11.3 11.4 11.5 11.6 11.7 Documentation Support ........................................ Related Links ........................................................ Receiving Notification of Documentation Updates Community Resource............................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 25 25 25 25 25 25 25 12 Mechanical, Packaging, and Orderable Information ........................................................... 25 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (March 2016) to Revision C Page • Changed the device temperature grade in the Features section from Grade 0 (–40°C to 150°C) to Grade 1 (–40°C to 125°C) ............................................................................................................................................................................... 1 • Added the Receiving Notification of Documentation Updates section ................................................................................. 25 Changes from Revision A (November 2008) to Revision B Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 • Added AEC-Q100 Qualification bullets................................................................................................................................... 1 • Changed device numbers UCC2720x and UCC27200 to UCC2720x-Q1 and UCC27200-Q1 ............................................ 1 • Deleted Wirebond Life figure ................................................................................................................................................. 6 • Moved references from Additional References section to Related Documentation section................................................. 25 2 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: UCC27200-Q1 UCC27201-Q1 UCC27200-Q1, UCC27201-Q1 www.ti.com SLUS822C – JUNE 2008 – REVISED AUGUST 2016 5 Pin Configuration and Functions DDA Package 8-Pin SO With PowerPAD Top View V DD   HB 1 2 8 LO 7 V PowerPAD SS HO 3 6 LI HS 4 5 HI   The VSS pin and the exposed thermal die pad are internally connected. Pin Functions PIN NO. NAME TYPE (1) DESCRIPTION 1 VDD P Positive supply to the lower gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor range is 0.22 μF to 1 μF. 2 HB I High-side bootstrap supply. The bootstrap diode is on-chip, but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022 μF to 0.1 μF, however, the value is dependant on the gate charge of the high-side MOSFET. 3 HO O High-side output. Connect to the gate of the high-side power MOSFET. 4 HS I High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 5 HI I High-side input 6 LI I Low-side input 7 VSS O Negative supply terminal for the device which is generally grounded 8 LO — Low-side output. Connect to the gate of the low-side power MOSFET. PowerPAD — Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance. PowerPAD (1) I = Input, O = Output, P = Power Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: UCC27200-Q1 UCC27201-Q1 Submit Documentation Feedback 3 UCC27200-Q1, UCC27201-Q1 SLUS822C – JUNE 2008 – REVISED AUGUST 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature (unless otherwise noted) (1) (2) MIN MAX UNIT VDD Supply voltage –0.3 20 V VLI, VHI Input voltages on LI and HI –0.3 20 V VLO Output voltage on LO –0.3 VDD + 0.3 V DC Repetitive pulse < 100 ns –2 VDD + 0.3 V VHS – 0.3 VHB + 0.3 V VHS – 2 VHB + 0.3, (VHB – VHS < 20) V DC –1 120 V Repetitive pulse < 100 ns –5 120 V –0.3 120 V DC VHO Output voltage on HO VHS HS voltage VHB HB voltage Repetitive pulse < 100 ns 20 V Tlead HB-HS voltage Lead temperature Soldering, 10 seconds 300 °C PD Power dissipation TA = 25°C (3) 2.7 W TJ Operating virtual-junction temperature –40 150 °C Tstg Storage temperature –65 150 °C (1) (2) (3) –0.3 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to VSS. Currents are positive into, negative out of the specified terminal. This data was taken using the JEDEC proposed high-K test PCB (see Thermal Information for details). 6.2 ESD Ratings VALUE V(ESD) (1) Electrostatic discharge Human-body model (HBM), per AEC Q100-002 (1) ±2000 Charged-device model (CDM), per AEC Q100-011 ±1000 UNIT V AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions VDD VHS VHB Supply voltage MIN NOM MAX 8 12 17 HS voltage –1 105 HS voltage (repetitive pulse