UCC27201ATDA3

UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER FEATURES 1 • • • • • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage Maximum VDD Voltage On-Chip RD Bootstrap Diode Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • • • • • • • Power Supplies for Telecom, Datacom, and Merchant Markets Half-Bridge Applications and Full-Bridge Converters Isolated Bus Architecture Two-Switch Forward Converters Active-Clamp Forward Converters High Voltage Synchronous-Buck Converters Class-D Audio Amplifiers DESCRIPTION The UCC27201A is a high frequency N-Channel MOSFET driver that includes a bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other. The UCC27201A is based on the popular UCC27201 drivers, but offers some enhancements. In order to improve performance in noisy power supply environments the UCC27201A has an enhanced ESD input structure and also has the ability to withstand a maximum of -18 V on its HS pin. ORDERING INFORMATION (1) (1) (2) PRODUCT PACKAGE DESIGNATOR PACKAGE UCC27201A TD Bare die in gel pack (2) ORDERABLE PART NUMBER PACKAGE QUANTITY UCC27201ATDA2 10 UCC27201ATDA3 120 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated UCC27201A-DIE SLUSB70 – AUGUST 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION 2 DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 10.5 mils. Silicon with backgrind GND Al-Cu (0.5%) 598 nm Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 Table 1. Bond Pad Coordinates in Microns (1) (1) DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX VDD 1 167.58 1863 401.58 2007 HB 2 102.24 1175.94 246.24 1447.74 HO 3 135 629.82 235.8 886.32 HS 4 59.58 62.82 302.58 170.82 HI 5 1180.8 212.13 1281.6 312.93 LI 6 1180.8 426.42 1281.6 527.22 GND 7 1199.7 1245.87 1300.5 1346.67 GND 8 1199.7 1381.86 1300.5 1482.66 GND 9 1199.7 1518.66 1300.5 1619.46 LO 10 1077.3 1908.9 1281.6 2009.7 Substrate GND. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 PACKAGE OPTION ADDENDUM www.ti.com 1-Sep-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking Samples (4/5) (6) UCC27201ATDA2 ACTIVE 0 10 RoHS & Green Call TI N / A for Pkg Type 0 to 0 Samples UCC27201ATDA3 ACTIVE 0 120 RoHS & Green Call TI N / A for Pkg Type 0 to 0 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of