0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
UCC27424DR

UCC27424DR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC8_150MIL

  • 描述:

    4-A/4-A双通道栅极驱动器,带启用和5-V输入

  • 数据手册
  • 价格&库存
UCC27424DR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 UCC2742x Dual 4-A High Speed Low-Side MOSFET Drivers With Enable 1 Features 3 Description • • • • The UCC2742x family of high-speed dual MOSFET drivers can deliver large peak currents into capacitive loads. Three standard logic options are offered – dual-inverting, dual-noninverting, and one-inverting and one-noninverting driver. The thermally enhanced 8-pin PowerPAD™ MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. It is also offered in the standard SOIC-8 (D) or PDIP-8 (P) packages. 1 • • • • • • • Industry-Standard Pin-Out Enable Functions for Each Driver High Current Drive Capability of ±4 A Unique BiPolar and CMOS True Drive Output Stage Provides High Current at MOSFET Miller Thresholds TTL/CMOS Compatible Inputs Independent of Supply Voltage 20-ns Typical Rise and 15-ns Typical Fall Times with 1.8-nF Load Typical Propagation Delay Times of 25 ns with Input Falling and 35 ns with Input Rising 4-V to 15-V Supply Voltage Dual Outputs Can Be Paralleled for Higher Drive Current Available in Thermally Enhanced MSOP PowerPAD™ Package Rated From –40°C to 125°C Using a design that inherently minimizes shootthrough current, these drivers deliver 4A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A unique BiPolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages. The UCC2742x provides enable (ENB) functions to have better control of the operation of the driver applications. ENBA and ENBB are implemented on pins 1 and 8 which were previously left unused in the industry standard pin-out. They are internally pulled up to VDD for active high logic and can be left open for standard operation. 2 Applications • • • • • Switch Mode Power Supplies DC/DC Converters Motor Controllers Line Drivers Class D Switching Amplifiers Device Information(1) PART NUMBER UCC27423 UCC27424 UCC27425 PACKAGE BODY SIZE (NOM) SOIC (8) 4.90 mm × 3.91 mm MSOP-PowerPAD (8) 3.00 mm × 3.00 mm PDIP (8) 9.81 mm × 6.35 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Application Diagram ENBB UCC2742x ENBA 1 ENBA ENBB 8 INA 2 INA OUTA 7 3 GND VDD 6 4 INB OUTB 5 V+ GND INB GND GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 4 5 6 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Dissipation Ratings ................................................... Typical Characteristics .............................................. Detailed Description ............................................ 12 8.1 Overview ................................................................. 12 8.2 Functional Block Diagram ....................................... 12 8.3 Feature Description................................................. 12 8.4 Device Functional Modes........................................ 13 9 Application and Implementation ........................ 14 9.1 Application Information............................................ 14 9.2 Typical Application ................................................. 14 10 Power Supply Recommendations ..................... 19 11 Layout................................................................... 19 11.1 Layout Guidelines ................................................. 19 11.2 Layout Example .................................................... 20 11.3 Thermal Considerations ........................................ 20 12 Device and Documentation Support ................. 21 12.1 12.2 12.3 12.4 12.5 12.6 12.7 Device Support...................................................... Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 21 21 21 21 22 22 22 13 Mechanical, Packaging, and Orderable Information ........................................................... 22 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (May 2013) to Revision E • Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................................................................................................. 1 Changes from Revision C (July 2011) to Revision D Page • Added Pin Functions table note.............................................................................................................................................. 3 • Added ABSOLUTE MAXIMUM RATINGS note...................................................................................................................... 4 • Added additional ENABLE pin description. .......................................................................................................................... 12 Changes from Revision B (November 2004) to Revision C Page • Changed temperature rating................................................................................................................................................... 1 • Changed ORDERING INFORMATION temperature range, three instances. ........................................................................ 1 • Changed Output current (OUTA, OUTB) DC from 0.3 A to 0.2 A.......................................................................................... 4 • Changed ELECTRICAL CHARACTERISTICS temperature rating. ....................................................................................... 5 • Changed Low-level output level from 40 mV max to 45 mV max. ......................................................................................... 5 2 Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 5 Device Comparison Table (1) (2) OUTPUT CONFIGURATION TEMPERATURE RANGE TA = TJ PACKAGED DEVICES SOIC-8 (D) (1) MSOP-8 PowerPAD (DGN) (2) PDIP-8 (P) Dual inverting –40°C to 125°C UCC27423D UCC27423DGN UCC27423P Dual nonInverting –40°C to 125°C UCC27424D UCC27424DGN UCC27424P One inverting, one noninverting –40°C to 125°C UCC27425D UCC27425DGN UCC27425P D (SOIC-8) and DGN (PowerPAD-MSOP) packages are available taped and reeled. Add R suffix to device type (e.g. UCC27423DR, UCC27424DGNR) to order quantities of 2,500 devices per reel for D or 1,000 devices per reel for DGN package. The PowerPAD™ is not directly connected to any leads of the package. However, it is electrically and thermally connected to the substrate which is the ground of the device. 6 Pin Configuration and Functions D Package, DGN Package, P Package 8-Pin SOIC, 8-PIn MSOP-PowerPAD, 8-Pin PDIP Top View UCC27425 UCC27424 UCC27423 ENBA 1 8 ENBB ENBA 1 8 ENBB ENBA 1 8 ENBB INA 2 7 OUTA INA 2 7 OUTA INA 2 7 OUTA 6 VDD GND 3 5 OUTB INB 4 (DUAL INVERTING) GND 3 INB 4 6 VDD 5 OUTB GND 3 INB 4 (DUAL NON-INVERTING) 6 VDD 5 OUTB (ONE INVERTING AND ONE NON-INVERTING) Pin Functions PIN I/O DESCRIPTION NAME NO. ENBA 1 I Enable input for the driver A with logic compatible threshold and hysteresis. The driver output can be enabled and disabled with this pin. It is internally pulled up to VDD with 100 kΩ resistor for active high operation. The output state when the device is disabled will be low regardless of the input state. ENBB 8 I Enable input for the driver B with logic compatible threshold and hysteresis. The driver output can be enabled and disabled with this pin. It is internally pulled up to VDD with 100 kΩ resistor for active high operation. The output state when the device is disabled will be low regardless of the input state. (1) GND 3 — Common ground: this ground should be connected very closely to the source of the power MOSFET which the driver is driving. INA 2 I Input A: input signal of the A driver which has logic compatible threshold and hysteresis. If not used, this input should be tied to either VDD or GND. It should not be left floating. (1) INB 4 I Input B. Input signal of the A driver which has logic compatible threshold and hysteresis. If not used, this input should be tied to either VDD or GND. It should not be left floating. OUTA 7 O Driver output A. The output stage is capable of providing 4A drive current to the gate of a power MOSFET. OUTB 5 O Driver output B. The output stage is capable of providing 4A drive current to the gate of a power MOSFET. VDD 6 I Supply. Supply voltage and the power input connection for this device. (1) Refer to Detailed Description for more details. Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 Submit Documentation Feedback 3 UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT –0.3 16 V Output current (OUTA, OUTB) DC 0.2 A Pulsed, (0.5 μs) 4.5 A –5 6 or VDD + 0.3 (whichever is larger) V –0.3 6 or VDD + 0.3 (whichever is larger) V 3 W VDD Supply voltage IOUT_DC IOUT_PULSED VIN Input voltage (INA, INB) Enable voltage (ENBA, ENBB) DGN package Power dissipation at TA = 25°C TJ D package 650 P package 350 Junction operating temperature –55 Lead temperature (soldering, 10 s) Tstg (1) (2) Storage temperature –65 mW 150 °C 300 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. When VDD ≤ 6 V, EN rating max value is 6 V; when VDD > 6 V, EN rating max value is VDD + 0.3 V. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2500 Charged device model (CDM), per JEDEC specification JESD22-C101 (2) ±1500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VDD Supply voltage INA and INB Input voltage ENA and ENB Enable voltage TJ Operating junction temperature NOM MAX UNIT 4 15 V –2 15 V 0 15 V –40 125 °C 7.4 Thermal Information UCC2742x THERMAL METRIC (1) D (SOIC) DGN (MSOP) P (PDIP) 8 PINS 8 PINS 8 PINS UNIT RθJA Junction-to-ambient thermal resistance 107.3 56.6 55.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 52.2 52.8 45.3 °C/W RθJB Junction-to-board thermal resistance 47.3 32.6 32.6 °C/W ψJT Junction-to-top characterization parameter 10.2 1.8 23.0 °C/W ψJB Junction-to-board characterization parameter 46.8 32.3 32.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance – 5.9 – °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 7.5 Electrical Characteristics VDD = 4.5 V to 15 V, TA = –40°C to 125°C,TA = TJ, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT (INA, INB) VIN_H Logic 1 input threshold 2 VIN_L Logic 0 input threshold 1 0 V ≤ VIN ≤ VDD Input current –10 0 10 V μA OUTPUT (OUTA, OUTB) (1) Output current VDD = 14 V VOH High-level output voltage VOH = VDD – VOUT, IOUT = –10 mA VOL Low-level output level IOUT = 10 mA Output resistance high 4 TA = 25°C, IOUT = –10 mA, VDD = 14 V (2) 25 TA = full range, IOUT = –10 mA, VDD = 14 V (2) 18 TA = 25°C, IOUT = 10 mA, VDD = 14 V Output resistance low (2) TA = full range IOUT = 10 mA, VDD = 14 V (2) Latch-up protection 1.9 A 330 450 22 45 30 35 45 2.2 1.2 2.5 mV Ω 4.0 500 mA SWITCHING TIME tr Rise time (OUTA, OUTB) CLOAD = 1.8 nF 20 40 tf Fall time (OUTA, OUTB) CLOAD = 1.8 nF 15 40 td1 Delay, IN rising (IN to OUT) CLOAD = 1.8 nF 25 40 td2 Delay, IN falling (IN to OUT) CLOAD = 1.8 nF 35 50 2.4 2.9 V V ns ENABLE (ENBA, ENBB) VIN_H High-level input voltage LO to HI transition VIN_L Low-level input voltage HI to LO transition Hysteresis 1.7 1.1 1.8 2.2 0.15 0.55 0.90 V 75 100 140 kΩ RENB Enable impedance VDD = 14 V, ENB = GND tD3 Propagation delay time (see Figure 2) CLOAD = 1.8 nF 30 60 ns tD4 Propagation delay time (see Figure 2) CLOAD = 1.8 nF 100 150 ns INA = 0 V, INB = 0 V 900 1350 INA = 0 V, INB = HIGH 750 1100 INA = HIGH, INB = 0 V 750 1100 INA = HIGH, INB = HIGH 600 900 INA = 0 V, INB = 0 V 300 450 INA = 0 V, INB = HIGH 750 1100 INA = HIGH, INB = 0 V 750 1100 OVERALL IDD IDD UCC27423 Static operating current, VDD = 15 V, ENBA = ENBB = 15 V UCC27424 Static operating current, VDD = 15 V, ENBA = ENBB = 15 V INA = HIGH, INB = HIGH INA = 0 V, INB = 0 V IDD IDD (1) (2) UCC27425 Static operating current, VDD = 15 V, ENBA = ENBB = 15 V All disabled, VDD = 15 V, ENBA = ENBB = 0 V INA = 0 V, INB = HIGH μA μA 1200 1800 600 900 1050 1600 INA = HIGH, INB = 0 V 450 700 INA = HIGH, INB = HIGH 900 1350 INA = 0 V, INB = 0 V 300 450 INA = 0 V, INB = HIGH 450 700 INA = HIGH, INB = 0 V 450 700 INA = HIGH, INB = HIGH 600 900 μA μA The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 Submit Documentation Feedback 5 UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com 7.6 Dissipation Ratings PACKAGE SUFFIX POWER RATING (mW) TA = 70°C (1) DERATING FACTOR ABOVE 70°C (mW/°C) (1) SOIC-8 D 344–655 (2) 6.25–11.9 (2) PDIP-8 P 500 9 DGN 1370 17.1 MSOP (1) (2) (3) (3) 125°C operating junction temperature is used for power rating calculations The range of values indicates the effect of pc-board. These values are intended to give the system designer an indication of the best and worst case conditions. In general, the system designer should attempt to use larger traces on the pc-board where possible in order to spread the heat away form the device more effectively. For information on the PowerPAD™ package, refer to Technical Brief, PowerPad Thermally Enhanced Package, Texas Instruments (SLMA002) and Application Brief, PowerPad Made Easy, Texas Instruments (SLMA004). The PowerPAD™ is not directly connected to any leads of this package. However, it is electrically and thermally connected to the substrate which is the ground of the device. (a) (b) +5V 90% 90% INPUT INPUT 10% 0V 10% t D1 tR t D2 tF 16V 90% 90% tF tR 90% t D1 OUTPUT t D2 OUTPUT 10% 0V 10% Figure 1. Switching Waveforms for (a) Inverting Driver and (b) Noninverting Driver 5V ENBx VIN_L VIN_H 0V tD3 tD4 VDD 90% OUTx 90% tR tF 10% 0V NOTE: The 10% and 90% thresholds depict the dynamics of the BiPolar output devices that dominate the power MOSFET transition through the Miller regions of operation. Figure 2. Switching Waveform for Enable to Output 6 Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 7.7 Typical Characteristics 100 100 80 10 nF IDD - Supply Current - mA IDD - Supply Current - mA 80 60 40 4.7 nF 2.2 nF 20 10 nF 4.7 nF 60 40 2.2 nF 1 nF 20 1 nF 470 pF 470 pF 0 0 500 K 1M 1.5 M 0 2M 0 500 K f - Frequency - Hz 1M 1.5 M 2M f - Frequency - Hz Figure 3. Supply Current vs Frequency (VDD = 4.5 V) Figure 4. Supply Current vs Frequency (VDD = 8.0 V) IDD - Supply Current - mA 200 150 10 nF 4.7 nF 100 2.2 nF 50 1 nF 470 pF 0 0 500 K 1M 1.5 M 2M f - Frequency - Hz Figure 5. Supply Current vs Frequency (VDD = 12 V) Figure 6. Supply Current vs Frequency (VDD = 15 V) 160 90 80 140 120 IDD - Supply Current - mA IDD - Supply Current - mA 2 MHz 70 60 50 1 MHz 40 30 500 kHz 20 2 MHz 100 1 MHz 80 60 500 kHz 40 200 kHz 200 kHz 20 10 0 100 kHz 100/50 kHz 4 6 8 12 10 VDD - Supply Voltage - V 14 16 Figure 7. Supply Current vs Supply Voltage (CLOAD = 2.2 nF) 0 50/20 kHz 4 9 14 19 VDD - Supply Voltage - V Figure 8. Supply Current vs Supply Voltage (CLOAD = 4.7 nF) Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 Submit Documentation Feedback 7 UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com Typical Characteristics (continued) Figure 9. Supply Current vs Supply Voltage (UCC27423) Figure 10. Supply Current vs Supply Voltage (UCC27424) 25 0.75 0.70 tr 20 tr/tf - Rise/Fall Time - ns IDD - Supply Current - mA 0.65 Input = VDD 0.60 0.55 0.50 Input = 0 V 0.45 0.40 15 tf 10 5 0.35 0 0.30 4 6 8 10 12 14 -50 16 0 50 100 150 TJ - Temperature -°C VDD - Supply Voltage - V Figure 12. Rise Time and Fall Time vs Temperature (UCC27423) tf - Fall Time - ms Figure 11. Supply Current vs Supply Voltage (UCC27425) Figure 13. Rise Time vs Supply Voltage 8 Submit Documentation Feedback Figure 14. Fall Time vs Supply Voltage Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 Typical Characteristics (continued) 30 38 28 36 24 22 4.7 nF 20 18 2.2 nF 16 32 4.7 nF 30 28 2.2 nF 26 470 pF 24 1 nF 470 pF 14 12 10 nF 34 10 nF tD2 - Delay Time - ns tD1 - Delay Time - ns 26 22 1 nF 4 6 8 10 12 20 14 16 4 6 VDD - Supply Voltage - V Figure 15. Delay Time (tD1) vs Supply Voltage (UCC27423) 8 10 12 VDD - Supply Voltage - V 14 16 Figure 16. Delay Time (tD2) vs Supply Voltage (UCC27423) 3.0 kΩ Enable threshold and hysteresis - V ENBL - ON 2.5 2.0 1.5 1.0 ENBL - OFF 0.5 ENBL - HYSTERESIS 0 -50 -25 0 25 50 75 TJ - Temperature - °C 100 125 Figure 17. Enable Threshold and Hysteresis vs Temperature Figure 18. Enable Resistance vs Temperature 50 ms/div 50 ms/div Figure 19. Output Behavior vs Supply Voltage (Inverting) Figure 20. Output Behavior vs Supply Voltage (Inverting) Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 Submit Documentation Feedback 9 UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com Typical Characteristics (continued) VDD - Supply Voltage - V 1 V/div IN = VDD ENBL = VDD VDD OUT 0V 10 nF Between Output and GND 50 ms/div 50 ms/div Figure 21. Output Behavior vs VDD (Inverting) Figure 22. Output Behavior vs VDD (Inverting) 50 ms/div 50 ms/div Figure 23. Output Behavior vs VDD (Noninverting) Figure 24. Output Behavior vs VDD (Noninverting) VDD - Supply Voltage - V 1 V/div IN = GND ENBL = VDD VDD OUT 0V 10 50 ms/div 10 nF Between Output and GND 50 ms/div Figure 25. Output Behavior vs VDD (Noninverting) Figure 26. Output Behavior vs VDD (Noninverting) Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 Typical Characteristics (continued) 2.0 VON - Input Threshold Voltage - V 1.9 VDD = 15 V 1.8 1.7 1.6 1.5 VDD = 10 V VDD = 4.5 V 1.4 1.3 1.2 -50 -25 0 25 50 75 100 125 TJ - Temperature - °C Figure 27. Input Threshold vs Temperature Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 Submit Documentation Feedback 11 UCC27423, UCC27424, UCC27425 SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 www.ti.com 8 Detailed Description 8.1 Overview The UCC2742x family of high-speed dual MOSFET drivers can deliver large peak currents into capacitive loads. Three standard logic options are offered – dual-inverting, dual-noninverting and one-inverting and onenoninverting driver. The thermally enhanced 8-pin PowerPAD™ MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. It is also offered in the standard SOIC-8 (D) or PDIP-8 (P) packages. Using a design that inherently minimizes shoot-through current, these drivers deliver 4A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A unique Bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages. Table 1 highlights more details about UCC2742x. Table 1. UCC2742x Features and Benefits FEATURE BENEFIT 1-ns (typ) delay matching between channels Ease of paralleling outputs for higher (2 times) current capability, ease of driving parallel-power switches Expanded VDD operating range of 4 to 15 V Flexibility in system design Outputs enabled when enable pins (ENx) in floating condition Pin-to-pin compatibility with the UCC27324 device from Texas Instruments and industry standard pinout, in designs where Pin 1 and Pin 8 are in floating condition CMOS/TTL compatible input and enable threshold with wide hysteresis Enhanced noise immunity, while retaining compatibility with microcontroller logic-level inputs signals (3.3 V, 5 V) optimized for digital power Ability to handle –5 VDC (max) at input pins (INA/B) Increased robustness in noisy environments 8.2 Functional Block Diagram 8 ENBB 7 OUTA 6 VDD 5 OUTB ENBA 1 INVERTING INA 2 VDD NON-INVERTING INVERTING GND 3 INB 4 NON-INVERTING UDG-01063 8.3 Feature Description 8.3.1 Enable UCC2742x provides dual Enable inputs for improved control of each driver channel operation. The inputs incorporate logic compatible thresholds with hysteresis. They are internally pulled up to VDD with 100kΩ resistor for active high operation. When ENBA and ENBB are driven high, the drivers are enabled and when ENBA and ENBB are low, the drivers are disabled. The default state of the Enable pin is to enable the driver and therefore can be left open for standard operation. However, if the enable pin is left open, it is recommended to terminate any PCB traces to be as short as possible to limit noise. If large noise is present due to non-optimal PCB layout, it is recommended to tie the Enable pin to Vcc or to add a filter capacitor (0.1 µF) to the Enable pin. The output states when the drivers are disabled is low regardless of the input state. See the truth table of Table 2 for the operation using enable logic. 12 Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: UCC27423 UCC27424 UCC27425 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 Feature Description (continued) Enable input are compatible with both logic signals and slow changing analog signals. They can be directly driven or a power-up delay can be programmed with a capacitor between ENBA, ENBB and AGND. ENBA and ENBB control input A and input B respectively. 8.3.2 Input Stage The input thresholds have 3.3 V logic sensitivity over the full range of VDD voltages; it is equally compatible with 0 to VDD signals. The inputs of the UCC2742x driver family are designed to withstand 500-mA reverse current without damaging the IC for logic upset. The input stage of each driver should be driven by a signal with a short rise or fall time. This condition is satisfied in typical power supply applications where the input signals are provided by a PWM controller or logic gates with fast transition times (
UCC27424DR 价格&库存

很抱歉,暂时无法提供与“UCC27424DR”相匹配的价格&库存,您可以联系我们找货

免费人工找货
UCC27424DR
  •  国内价格
  • 1+23.18760

库存:72

UCC27424DR
    •  国内价格
    • 2500+5.75927
    • 5000+5.47140
    • 12500+5.26581

    库存:0

    UCC27424DR
    •  国内价格 香港价格
    • 1+8.652901+1.10210
    • 10+7.5567010+0.96240
    • 100+6.28560100+0.80060
    • 500+5.62090500+0.71590
    • 1000+4.349801000+0.55400
    • 2500+4.209802500+0.53620
    • 10000+3.4635010000+0.44110
    • 25000+3.3585025000+0.42780

    库存:0