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VCA810
SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
VCA810 High Gain Adjust Range, Wideband and Variable Gain Amplifier
1 Features
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1
Operating from ±5-V supplies, the device gain control
voltage adjusts the gain from –40 dB at a 0-V input to
40 dB at a –2-V input. Increasing the control voltage
above ground attenuates the signal path to greater
than 80 dB. Signal bandwidth and slew rate remain
constant over the entire gain adjust range. This 40dB/V gain control is accurate within ±1.5 dB (±0.9 dB
for high grade), allowing the gain control voltage in an
AGC application to be used as a received signal
strength indicator (RSSI) with ±1.5-dB accuracy.
High Gain Adjust Range: ±40 dB
Differential In, Single-Ended Out
Low Input Noise Voltage: 2.4 nV/√Hz
Constant Bandwidth vs Gain: 35 MHz
High dB/V Gain Linearity: ±0.3 dB
Gain Control Bandwidth: 25 MHz
Low Output DC Error: < ±40 mV
High Output Current: ±60 mA
Low Supply Current: 24.8 mA
(Maximum for –40°C to 85°C Temperature Range)
Excellent common-mode rejection and commonmode input range at the two high-impedance inputs
allow the device to provide a differential receiver
operation with gain adjust. The output signal is
referenced to ground. Zero differential input voltage
gives a 0-V output with a small DC offset error. Low
input noise voltage ensures good output SNR at the
highest gain settings.
2 Applications
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•
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Optical Receiver Time Gain Control
Sonar Systems
Voltage-Tunable Active Filters
Log Amplifiers
Pulse Amplitude Compensation
AGC receivers With RSSI
Improved Replacement for VCA610
In applications where pulse edge information is
critical, and the device is being used to equalize
varying channel loss, minimal change in group delay
over gain setting retains excellent pulse edge
information.
An improved output stage provides adequate output
current to drive the most demanding loads. Although
principally intended to drive analog-to-digital
converters (ADCs) or second-stage amplifiers, the
±60-mA output current easily drives doublyterminated 50-Ω lines or a passive post-filter stage
over the ±1.7-V output voltage range.
3 Description
The VCA810 is a DC-coupled, wideband,
continuously
variable,
voltage-controlled
gain
amplifier. The device provides a differential input to
single-ended output conversion with a highimpedance gain control input used to vary the gain
over a –40-dB to 40-dB range linear in dB/V.
Device Information
PART NUMBER
VCA810
PACKAGE
SOIC (8)
BODY SIZE (NOM)
4.90 mm × 3.91 mm
Functional Block Diagram
+5V
6
V+
V-
VCA810
1
8
Gain
Adjust
+
X1
5
VOUT
2
VC
3
0 ® -2V
-40dB ® +40dB Gain
7
-5V
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
VCA810
SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
Absolute Maximum Ratings ..................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics........................................... 5
High Grade DC Characteristics: VS = ±5 V
(VCA810AID) ............................................................. 9
7.7 Typical Characteristics ............................................ 11
8
Detailed Description ............................................ 16
8.1 Overview ................................................................. 16
8.2 Functional Block Diagram ....................................... 16
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 20
9
Applications and Implementation ...................... 21
9.1 Application Information............................................ 21
9.2 Typical Application .................................................. 30
10 Power Supply Recommendations ..................... 31
11 Layout................................................................... 31
11.1 Layout Guidelines ................................................. 31
11.2 Layout Example .................................................... 32
12 Device and Documentation Support ................. 33
12.1
12.2
12.3
12.4
12.5
12.6
Device Support......................................................
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
33
33
33
33
33
33
13 Mechanical, Packaging, and Orderable
Information ........................................................... 33
4 Revision History
Changes from Revision F (December 2010) to Revision G
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Changed DC Performance, Input offset current parameter unit from mA to nA in High Grade DC Characteristics table ..... 9
Changes from Revision E (August 2008) to Revision F
Page
•
Deleted lead temperature specification from Absolute Maximum Ratings table ................................................................... 4
•
Corrected typo in Figure 34 .................................................................................................................................................. 21
Changes from Revision D (February, 2006) to Revision E
•
2
Page
Changed storage temperature minimum value in Absolute Maximum Ratings table from –40°C to –65°C .......................... 4
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
5 Device Comparison Table
SINGLES
DUALS
GAIN ADJUST RANGE (dB)
INPUT NOISE (nV/√Hz)
SIGNAL BANDWIDTH (MHz)
VCA811
—
80
2.4
80
—
VCA2612
45
1.25
80
—
VCA2613
45
1
80
—
VCA2614
45
3.6
40
—
VCA2616
45
3.3
40
—
VCA2618
45
5.5
30
6 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
A
-In
-VS
8
7
+VS VOUT
6
5
(1)
VCA810
1
+In
(1)
High grade version indicator.
(2)
NC = Not connected.
2
3
4
GND Gain NC
Control,
VC
(2)
Pin Functions
PIN
NO.
1
NAME
I/O
DESCRIPTION
+In
I
Noninverting input
2
GND
P
Ground, serves as reference for gain control pin
3
Gain Control,
VC
I
Gain control
4
NC
—
No connect
5
VOUT
O
Output
6
+VS
P
Positive supply
7
–VS
P
Negative supply
8
–In
I
Inverting input
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range, unless otherwise noted. (1)
MIN
Power supply
Internal power dissipation
MAX
UNIT
±6.5
V
See Thermal Information
Differential input voltage
±VS
V
Input common-mode voltage
±VS
V
150
°C
125
°C
Junction temperature, TJ
Storage temperature, Tstg
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
Machine Model (MM)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Temperature
Supply voltage
MIN
NOM
MAX
–40
25
85
UNIT
°C
±4
±5
±5.5
V
7.4 Thermal Information
VCA810
THERMAL METRIC
(1)
D (SOIC)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
80
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51
°C/W
RθJB
Junction-to-board thermal resistance
45
°C/W
ψJT
Junction-to-top characterization parameter
14
°C/W
ψJB
Junction-to-board characterization parameter
45
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
7.5 Electrical Characteristics
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
TJ = 25°C
Small-signal bandwidth (see
Functional Block Diagram)
35
TJ = 25°C (2)
−2 V ≤ VC ≤ 0 V
30
MHz
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
B
(3)
29
29
TJ = 25°C
Large-signal bandwidth
35
TJ = 25°C (2)
VO = 2 VPP, −2 ≤ VC ≤ −1
30
B
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
MHz
29
(3)
29
TJ = 25°C
Frequency response peaking
VO < 500 mVPP, −2 V ≤ VC ≤ 0 V
0.1
TJ = 25°C (2)
0.5
B
TJ = 0°C to 70°C (3)
dB
0.5
TJ = –40°C to 85°C (3)
0.5
TJ = 25°C
Slew rate
VO = 3.5-V step, −2 ≤ VC ≤ −1,
10% to 90%
350
TJ = 25°C (2)
300
B
TJ = 0°C to 70°C (3)
V/μs
300
TJ = –40°C to 85°C (3)
295
TJ = 25°C
Settling time to 0.01%
VO = 1-V step, −2 ≤ VC ≤ −1
30
TJ = 25°C (2)
40
B
TJ = 0°C to 70°C (3)
ns
41
TJ = –40°C to 85°C (3)
41
TJ = 25°C
Rise-and-fall time
VO = 1-V step, −2 ≤ VC ≤ −1
10
TJ = 25°C (2)
12
B
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
ns
12.1
(3)
12.1
Group delay
G = 0 dB, VC= −1 V, f = 5 MHz,
VO = 500 mVPP
TJ = 25°C
C
6.2
ns
Group delay variation
VO < 500 mVPP, −2 V ≤ VC ≤ 0 V,
f = 5 MHz
TJ = 25°C
C
3.5
ns
Second harmonic distortion
VO = 1 VPP, f = 1 MHz,
VC = −1 V, G = 0 dB
TJ = 25°C
HD2
–71
TJ = 25°C (2)
–51
B
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
dBc
–50
(3)
–49
−35
TJ = 25°C
HD3
Third harmonic distortion
TJ = 25°C (2)
VO = 1 VPP, f = 1 MHz,
VC = −1 V, G = 0 dB
TJ = 0°C to 70°C (3)
–34
B
dBc
–32
TJ = –40°C to 85°C (3)
–29
TJ = 25°C
Input voltage noise
TJ = 25°C (2)
VC = −2 V
TJ = 0°C to 70°C (3)
2.4
2.8
B
nV/√Hz
3.4
TJ = –40°C to 85°C (3)
3.5
TJ = 25°C
Input current noise
TJ = 25°C (2)
−2 V ≤ VC ≤ 0 V
TJ = 0°C to 70°C (3)
1.4
1.8
B
pA/√Hz
2
TJ = –40°C to 85°C (3)
(1)
(2)
(3)
TJ = 25°C
Fully attenuated feedthrough
f ≤ 1 MHz, VC > 200 mV
Overdrive recovery
VIN = 2 V to 0 V, VC = −2 V,
G = 40 dB
TJ = 25°C (2)
TJ = 25°C
TJ = 25°C (2)
2.1
−80
B
−70
dB
100
B
ns
150
Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value; only for information.
Junction temperature = ambient for 25°C tested specifications.
Junction temperature = ambient at low temperature limit; junction temperature = ambient 30°C at high temperature limit for over
temperature specifications.
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Electrical Characteristics (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC PERFORMANCE (Single-Ended or Differential Input)
TJ = 25°C
Output offset voltage (both
inputs grounded) (4)
−2 V ≤ VC ≤ 0 V
±22
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
Output offset voltage drift
±4
TJ = 25°C (2)
mV
±30
(3)
TJ = 0°C to 70°C (3)
±32
±125
B
TJ = –40°C to 85°C (3)
V/°C
±125
TJ = 25°C
Input offset voltage (4)
±0.1
TJ = 25°C (2)
Both inputs grounded
±0.25
A
TJ = 0°C to 70°C (3)
mV
±0.3
TJ = –40°C to 85°C (3)
input offset voltage drift
TJ = 0°C to 70°C (3)
±0.35
±1
B
TJ = –40°C to 85°C (3)
−6
TJ = 25°C
Input bias current
TJ = 25°C (2)
−2 V ≤ VC ≤ 0 V
–10
A
TJ = 0°C to 70°C (3)
−12
TJ = –40°C to 85°C (3)
Input bias current drift
TJ = 0°C to 70°C (3)
±25
B
TJ = –40°C to 85°C (3)
nA/°C
±30
±100
TJ = 25°C (2)
−2 V ≤ VC ≤ 0 V
±600
A
TJ = 0°C to 70°C (3)
nA
±700
TJ = –40°C to 85°C (3)
Input offset current drift
μA
−14
TJ = 25°C
Input offset current
μV/°C
±1.2
TJ = 0°C to 70°C (3)
±800
±1.4
B
TJ = –40°C to 85°C (3)
nA/°C
±2.2
INPUT
TJ = 25°C
Common-mode input range
±2.4
TJ = 25°C (2)
±2.3
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
V
±2.3
(3)
±2.2
TJ = 25°C
Common-mode rejection ratio
VCM = 0.5 V, VC = −2 V, inputreferred
Differential input range (5)
85
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
Input impedance
95
TJ = 25°C (2)
dB
83
(3)
80
VCM = 0 V, single-ended
TJ = 25°C
C
1 || 1
MΩ || pF
VCM = 0 V, differential
TJ = 25°C
C
> 10 || < 2
MΩ || pF
VC = 0 V, VCM = 0 V
TJ = 25°C
C
3
VPP
OUTPUT
TJ = 25°C
VC = −2 V, RL = 100 Ω
±1.8
TJ = 25°C (2)
±1.7
A
TJ = 0°C to 70°C (3)
V
±1.4
TJ = –40°C to 85°C (3)
Voltage output swing
±1.3
TJ = 25°C
VC = −2 V, RL = 100 Ω
±1.7
TJ = 25°C (2)
±1.6
A
TJ = 0°C to 70°C (3)
V
±1.3
TJ = –40°C to 85°C (3)
±1.2
TJ = 25°C
Output current
VO = 0 V
6
±40
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
(4)
(5)
±60
TJ = 25°C (2)
mA
±35
(3)
±32
Output short-circuit current
VO = 0 V
TJ = 25°C
C
±120
Output impedance
VO = 0 V, f < 100 kHz
TJ = 25°C
C
0.2
mA
Ω
Total output offset is: (Output Offset Voltage ± Input Offset Voltage x Gain).
Maximum input at minimum gain for < 1-dB gain compression.
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Electrical Characteristics (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GAIN CONTROL (VC, Pin 3, Single-Ended or Differential Input)
Specified gain range
ΔVC / ΔdB = 25 mV/dB
TJ = 25°C
C
±40
dB
Maximum control voltage
G = −40 dB
TJ = 25°C
C
0
V
Minimum control voltage
G = 40 dB
TJ = 25°C
C
–2
V
TJ = 25°C
±0.4
TJ = 25°C (2)
−1.8 V ≤ VC ≤ −0.2 V
±1.5
A
TJ = 0°C to 70°C (3)
dB
±2.5
TJ = –40°C to 85°C (3)
Gain accuracy
±3.5
TJ = 25°C
±0.5
TJ = 25°C (2)
VC < −1.8 V, VC > −0.2 V
±2.2
A
TJ = 0°C to 70°C (3)
dB
±3.7
TJ = –40°C to 85°C (3)
TJ = 0°C to 70°C (3)
−1.8 V ≤ VC ≤ −0.2 V
TJ = –40°C to 85°C (3)
Gain drift
TJ = 0°C to 70°C
VC < −1.8 V, VC > −0.2 V
Gain control slope
±4.7
±0.02
B
dB/°C
±0.03
(3)
±0.03
TJ = –40°C to 85°C (3)
25°C
B
dB/°C
±0.04
C
–40
TJ = 25°C
TJ = 25°C (2)
−1.8 V ≤ VC ≤ 0 V
±1
A
TJ = 0°C to 70°C (3)
dB
±1.1
TJ = –40°C to 85°C (3)
Gain control linearity (6)
±1.2
TJ = 25°C
±0.7
TJ = 25°C (2)
VC < −1.8 V
±1.6
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
dB
±2.5
(3)
±3.2
TJ = 25°C
Gain control bandwidth
25
TJ = 25°C (2)
20
B
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
dB/V
±0.3
MHz
19
(3)
19
Gain control slew rate
80-dB gain step
TJ = 25°C
C
900
dB/ns
Gain settling time
1%, 80-dB step
TJ = 25°C
C
0.8
μs
TJ = 25°C
Input bias current
–1.5
TJ = 25°C (2)
VC = −1 V
–3.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
–8
TJ = 25°C
Gain + power-supply rejection
ratio
VC = −2 V, G = 40 dB, +VS = 5 V
± 0.5 V
0.5
TJ = 25°C (2)
1.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
dB/V
1.8
(3)
2
TJ = 25°C
Gain – power-supply rejection
ratio
VC = −2 V, G = 40 dB,
–VS = –5 V ± 0.5 V
μA
–4.5
(3)
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
0.7
1.5
A
dB/V
1.8
TJ = –40°C to 85°C (3)
2
POWER SUPPLY
Specified operating voltage
TJ = 25°C (2)
C
TJ = 25°C (2)
Minimum operating voltage
TJ = 0°C to 70°C (3)
A
TJ = –40°C to 85°C (3)
±4
V
±6
TJ = 0°C to 70°C (3)
A
TJ = –40°C to 85°C (3)
(6)
V
±4
TJ =25°C (2)
Maximum operating voltage
±5
±4
±6
V
±6
Maximum deviation from best line fit.
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Electrical Characteristics (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TJ = 25°C
+VS = 5 V, G = −40 dB
mA
12.6
(3)
12.7
18
TJ = 25°C (2)
20.5
A
TJ = 0°C to 70°C (3)
mA
22
TJ = –40°C to 85°C (3)
22.3
TJ = 25°C
+VS = 5 V, G = –40 dB
10
TJ = 25°C (2)
7.5
A
TJ = 0°C to 70°C (3)
mA
7.2
TJ = –40°C to 85°C (3)
Positive minimum supply
quiescent current
7.1
TJ = 25°C
+VS = 5 V, G = 40 dB
18
TJ = 25°C (2)
15.5
A
TJ = 0°C to 70°C (3)
mA
14.5
TJ = –40°C to 85°C (3)
13.5
TJ = 25°C
−VS = −5 V, G = −40 dB
12
TJ = 25°C (2)
14.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
Negative maximum supply
quiescent current (7)
mA
14.6
(3)
14.7
TJ = 25°C
−VS = −5 V, G = 40 dB
20
TJ = 25°C (2)
22.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
mA
24.5
(3)
24.8
TJ = 25°C
−VS = −5 V, G = −40 dB
12
TJ = 25°C (2)
9.5
A
TJ = 0°C to 70°C (3)
mA
9.4
TJ = –40°C to 85°C (3)
Negative minimum supply
quiescent current (7)
9.3
TJ = 25°C
−VS = −5 V, G = 40 dB
20
TJ = 25°C (2)
17.5
A
TJ = 0°C to 70°C (3)
mA
16.5
TJ = –40°C to 85°C (3)
16
TJ = 25°C
+PSRR
Positive power-supply rejection
ratio
Input-referred, VC = −2 V
90
TJ = 25°C (2)
75
A
TJ = 0°C to 70°C (3)
dB
75
TJ = –40°C to 85°C (3)
73
TJ = 25°C
–PSRR
Negative power-supply
rejection ratio
Input-referred, VC = −2 V
85
TJ = 25°C (2)
70
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
UNIT
12.5
A
TJ = 0°C to 70°C (3)
TJ = 25°C
+VS = 5 V, G = 40 dB
MAX
10
TJ = 25°C (2)
TJ = –40°C to 85°C
Positive maximum supply
quiescent current
TYP
dB
70
(3)
68
THERMAL CHARACTERISTICS
Specified operating range, ID
package
(7)
8
C
–40
85
°C
Magnitude.
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
7.6 High Grade DC Characteristics: VS = ±5 V (VCA810AID)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC PERFORMANCE (Single-Ended or Differential Input)
TJ = 25°C
Output offset voltage
±4
TJ = 25°C (2)
−2 V < VC < 0 V
±14
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
mV
±24
(3)
±26
TJ = 25°C
Input offset voltage
±0.1
TJ = 25°C (2)
±0.2
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
mV
±0.25
(3)
±0.3
TJ = 25°C
Input offset current
±100
TJ = 25°C (2)
±500
A
TJ = 0°C to 70°C (3)
nA
±600
TJ = –40°C to 85°C (3)
±700
GAIN CONTROL (VC, Pin 3, Single-Ended or Differential Input)
TJ = 25°C
−1.8 V ≤ VC ≤ −0.2 V
±0.4
TJ = 25°C (2)
±0.9
A
TJ = 0°C to 70°C (3)
dB
±1.9
TJ = –40°C to 85°C (3)
Gain accuracy
±2.9
TJ = 25°C
VC < −1.8 V, VC > −0.2 V
±0.5
TJ = 25°C (2)
±1.5
A
TJ = 0°C to 70°C (3)
dB
±3.0
TJ = –40°C to 85°C (3)
±4.0
TJ = 25°C
−1.8 V ≤ VC ≤ 0 V
±0.3
TJ = 25°C (2)
±0.6
A
TJ = 0°C to 70°C (3)
dB
±0.7
TJ = –40°C to 85°C (3)
Gain control linearity (4)
±0.8
TJ = 25°C
VC < −1.8 V
±0.7
TJ = 25°C (2)
±1.1
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
dB/V
±1.9
(3)
±2.7
POWER SUPPLY
TJ = 25°C
+VS = 5 V, G = −40 dB
11.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
Positive maximum supply
quiescent current
10
TJ = 25°C (2)
11.7
TJ = 25°C
+VS = 5 V, G = 40 dB
18
TJ = 25°C (2)
19.5
A
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C
+VS = 5 V, G = −40 dB
21.3
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
8.5
A
mA
8.2
8.1
TJ = 25°C
+VS = 5 V, G = 40 dB
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C (3)
(4)
10
TJ = –40°C to 85°C (3)
Positive minimum supply
quiescent current
(2)
(3)
mA
21
(3)
TJ = 25°C
(1)
mA
11.6
(3)
18
16.5
A
mA
15.5
14.5
Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value; only for information.
Junction temperature = ambient for 25°C tested specifications.
Junction temperature = ambient at low temperature limit; junction temperature = ambient 30°C at high temperature limit for over
temperature specifications.
Maximum deviation from best line fit.
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High Grade DC Characteristics: VS = ±5 V (VCA810AID) (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, unless otherwise noted.
PARAMETER
TEST LEVEL (1)
TEST CONDITIONS
MIN
TJ = 25°C
−VS = −5 V, G = −40 dB
(3)
14.2
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
20
22
A
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
24.3
12
10
A
mA
9.9
TJ = –40°C to 85°C (3)
Negative minimum supply
quiescent current (5)
9.8
TJ = 25°C
−VS = −5 V, G = 40 dB
TJ = 25°C (2)
TJ = 0°C to 70°C (3)
TJ = –40°C to 85°C (3)
10
mA
24
TJ = 25°C
(5)
mA
14.1
TJ = –40°C to 85°C (3)
−VS = −5 V, G = −40 dB
UNIT
14
A
TJ = 0°C to 70°C (3)
TJ = 25°C
−VS = −5 V, G = 40 dB
MAX
12
TJ = 25°C (2)
TJ = –40°C to 85°C
Negative maximum supply
quiescent current (5)
TYP
20
18
A
mA
17
16.5
Magnitude.
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
7.7 Typical Characteristics
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
60
3
Gain (dB)
20
RL = 500W
0
VIN = 100mVPP, VOUT = 1VPP
-3
Gain (dB)
40
VIN = 10mVPP, VOUT = 1VPP
VIN = 1VPP, VOUT = 1VPP
0
VOUT = 2VPP, VIN = 200mVPP
-6
-9
-20
-12
VOUT = 2VPP, VIN = 20mVPP
-40
-15
-60
VC = -1VDC + 10mVPP
-18
1
10
100
1000
1
10
Frequency (MHz)
Figure 1. Small-Signal Frequency Response
Figure 2. Gain Control Frequency Response
0.6
150
G = +40dB
VIN = 2VPP
G = -20dB
VIN = 10mVPP
0.4
Output Voltage (V)
Output Voltage (mV)
100
50
G = -40dB
0
-50
0.2
G = +20dB
0
-0.2
-0.4
-100
-0.6
-150
Time (20ns/div)
Time (20ns/div)
Figure 3. Attenuated Pulse Response
1.2
Figure 4. High Gain Pulse Response
60
G = 0dB to -40dB, VIN = 1VDC
Specified Operating Range
40
1.0
20
0.8
Gain (dB)
Output Voltage (V)
100
Frequency (MHz)
0.6
0.4
0
-20
-40
Output Disabled for
+0.15V £ VC £ +2V
-60
0.2
-80
0
G = 0dB to +40dB, VIN = 10mVDC
-100
-0.2
0.5
Time (20ns/div)
0
-0.5
-1.0
-1.5
-2.0
-2.5
Control Voltage, VC (V)
Figure 5. Gain Control Pulse Response
Figure 6. Gain vs Control Voltage
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Typical Characteristics (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
VO = 1VPP
RL = 500W
Harmonic Distortion (dBc)
-35
-20
G = 0dB, Third Harmonic
G = 0dB, Third Harmonic
Harmonic Distortion (dBc)
-30
-40
-45
-50
G = +40dB, Third Harmonic
-55
G = +40dB, Second Harmonic
-60
-65
-70
-30
-40
G = +40dB, Third Harmonic
-50
-60
G = +40dB, Second Harmonic
f = 1MHz
VO = 1VPP
RL = 500W
-70
G = 0dB, Second Harmonic
-75
G = 0dB, Second Harmonic
-80
0.1
1
10
100
1000
Frequency (MHz)
Load (W)
Figure 7. Harmonic Distortion vs Frequency
f = 1MHz
RL = 500W
Harmonic Distortion (dBc)
-30
Figure 8. Harmonic Distortion vs RLOAD
-20
G = 0dB, Third Harmonic
Harmonic Distortion (dBc)
-20
-40
G = +40dB, Second Harmonic
-50
-60
-70
-80
G = +40dB, Third Harmonic
-90
-30
Third Harmonic
-40
-50
-60
Second Harmonic
-70
G = 0dB, Second Harmonic
-100
-80
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
5
10
15
Figure 9. Harmonic Distortion vs Output Voltage
Input
Limited
Max Useful
Output Voltage
Range
0.1
Resulting
Output Voltage
30
35
40
-20
Output
Limited
Max Useful
Input Voltage Range
25
Figure 10. Harmonic Distortion vs Gain
Harmonic Distortion (dBc)
Input/Output Voltage (VPP)
10
20
Gain (dB)
Output Voltage (VPP)
1
f = 1MHz
VO = 1VPP
RL = 500W
Resulting
Input Voltage
f = 1MHz
VIN = 1VPP
RL = 500W
-30
Third Harmonic
-40
-50
-60
Second Harmonic
-70
Input and Output Measured at 1dB Compression
-80
0.01
-40
-30
-20
-10
0
10
20
30
40
-40
Figure 11. Input, Output Range vs Gain
12
-35
-30
-25
-20
-15
-10
-5
0
Attenuation (dB)
Gain (dB)
Figure 12. Harmonic Distortion vs Attenuation
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SBOS275G – JUNE 2003 – REVISED DECEMBER 2015
Typical Characteristics (continued)
At RL = 500 Ω and VIN = single-ended input on V+ with V− at ground, VS = ±5 V, unless otherwise noted.
10000
Input-Referred Voltage Noise Density
10
RS = 20W
on Each Input
en (nV/?Hz)
in (pA/?Hz)
en (nV/?Hz)
eO (nV/?Hz)
1000
100
Differential Input
Voltage Noise (2.4nV/ÖHz)
Output-Referred Voltage Noise Density
10
Current Noise (1.8pA/ÖHz)
Each Input
1
1
0
100
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
1k
10k
100k
1M
10M
Frequency (Hz)
Control Voltage (V)
Figure 14. Input Voltage and Current Noise
Figure 13. Noise Density vs Control Voltage
0
50
40
VC = +0.1V
Isolation (dB)
30
Output Offset Error (mV)
-20
-40
-60
VC = +0.2V
-80
Maximum Error Band
20
10
Typical Devices
0
-10
-20
-30
-100
-40
-120
-50
1M
10M
100M
-40
-30
-20
-10
Frequency (Hz)
Figure 15. Fully Attenuated Isolation vs Frequency
250
Deviation from -40dB/V Gain Slope
20
30
40
Total Tested = 1462
G = +40dB
200
0.2
0.1
Count
Gain Error (dB)
10
Figure 16. Output Offset Voltage Total Error Band vs Gain
0.4
0.3
0
Gain (dB)
0
-0.1
150
100
-0.2
50
-0.3
-0.4
0
-0.5
-1
-1.5
-2
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