1A3

1A3

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    1A3 - 1.0 AMP SILICON RECTIFIERS - Bytes

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  • 数据手册
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1A3 数据手册
1A1 1.0 AMP SILICON RECTIFIERS THRU 1A7 VOLTAGE RANGE 50 to 1000 Volts CURRENT FEATURES * Low forward voltage drop * Low leakage current * High reliability * High current capability 1.0 Ampere R-1 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Lead: Axial leads, solderable per MIL-STD-202, method 208 guranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.19 grams .102(2.6) .091(2.3) DIA. .787(20.0) MIN. .126(3.2) .106(2.7) .025(0.65) .021(0.55) DIA. .787(20.0) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length at Ta=25 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Typical Junction Capacitance (Note 1) Typical Thermal Resistance RθJA (Note 2) Operating and Storage Temperature Range TJ, TSTG NOTES: 1A1 50 35 50 1A2 100 70 100 1A3 200 140 200 1A4 400 280 400 1.0 30 1.1 5.0 50 15 60 -65 +150 1A5 600 420 600 1A6 800 560 800 1A7 1000 700 1000 UNITS V V V A A V µA µA pF C/W C 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length. 108 RATING AND CHARACTERISTIC CURVES (1A1 THRU 1A7) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length 50 INSTANTANEOUS FORWARD CURRENT,(A) 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLTAGE,(V) 24 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 10 REVERSE LEAKAGE CURRENT, ( µA) Tj=100 C FIG.5-TYPICAL JUNCTION CAPACITANCE 35 30 25 20 15 10 5 0 1.0 .1 Tj=25 C .01 0 JUNCTION CAPACITANCE,(pF) 20 40 60 80 100 120 140 .01 .05 .1 .5 1 5 10 50 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) REVERSE VOLTAGE,(V) 109
1A3
1. 物料型号: - 型号为1A1至1A7,这些是1.0安培硅整流器。

2. 器件简介: - 这些器件是硅整流器,具有低正向电压降、低漏电流、高可靠性和高电流能力的特点。

3. 引脚分配: - 引脚为轴向引线,可按照MIL-TD-202标准方法208进行焊接,极性通过颜色带表示阴极端。

4. 参数特性: - 最大重复峰值反向电压从35V至1000V不等,最大直流阻断电压从50V至1000V不等。 - 最大平均正向整流电流为1.0A。 - 最大瞬时正向电压在1.0A时为1.1V。 - 最大直流反向电流在25℃时为5μA。 - 额定直流阻断电压100℃时为50μA。 - 典型结电容为15pF(在1MHz和4.0V反向电压下测量)。 - 典型热阻RθJA为60℃(从结到环境,375"(9.5mm)引线长度)。

5. 功能详解: - 这些器件用于整流应用,能够处理高达1.0A的电流,具有不同电压等级,适用于多种电力电子和信号整流场合。

6. 应用信息: - 适用于需要整流功能的电路,如电源整流、信号整流等。

7. 封装信息: - 封装为模塑塑料,环氧树脂符合UL 94V-0级阻燃标准,引脚为轴向引线,重量为0.19克。

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