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ECS-TXO32-S3-33-100-BN-TR

ECS-TXO32-S3-33-100-BN-TR

  • 厂商:

    CALIBER

  • 封装:

    SMD4

  • 描述:

    有源晶振 10MHz 3.3V SMD-4

  • 详情介绍
  • 数据手册
  • 价格&库存
ECS-TXO32-S3-33-100-BN-TR 数据手册
ECS-TXO32-S3 & ECS-VC-TXO32-S3 Stratum 3 Clipped Sine Wave TCXO / VCTCXO ECS-TXO32-S3 Stratum 3, Clipped Sine Wave SMD TCXO / VCTCXO. The 3.2 x 2.5 x 0.9 mm ceramic package S3 TCXO ideal for Femtocell, Nanocell and Instrumentation applications. Request a Sample OPERATING CONDITIONS / ELECTRICAL CHARACTERISTICS ECS-TXO32-S3 ECS-TXO32-S3 Parameters MIN MAX Units 50.000 MHz ±1.0 ppm Ref to freq @ +25°C ±2°C, Vcc = 3.3V, within 30 days ex-works Temperature ±280 ppb See Note 1 Supply ±0.1 ppm Vs. Supply Change (±5%), with 10KΩ//10 pF load Load ±0.1 ppm Vs. Load Change (±5%), Ref +25°C, Vcc 3.3V Aging/day ±0.02 ppm Aging/ year ±1.0 ppm +4.6 ppm +3.465 VDC 3.0 mA Frequency Range TYP 9.600 Frequency Tolerance Frequency Stability • • • • • • • • Overall Stability Clipped Sine Wave Output Stratum 3 TCXO / VCTCXO 280ppb Stability 3.2 x 2.5 mm Footprint PbFree/RoHS Compliant MSL 1 Lead Finish Au Supply Voltage +3.135 +3.3 Current Consumption Output Waveform 0.8 Start-up Time Phase Noise Inclusive of initial tolerance at 25°C, temperature, supply voltage ±5%, load ±5%, reflow soldering and ageing 15 years VDD (33 Option) Ref 25°C, Vcc=3.3V, Vc=1.5V Cload=10KΩ//10pF. V p-p @ 10.000 MHz 2. See Note 2 Clipped Sine Wave 10KΩ//10 pF Output Load Over temp (-40 ~ +85°C) varied less than 2°C per minute. Ref to Fref=(Fmax+Fmin)/2, Vcc 3.3V, Load 10KΩ//10 pF. Vs. Aging @ +25°C, Vcc = 3.3V, after 1hr of operation Clipped Sinewave Output Level Notes: 1. -4.6 Test Conditions 2 mS -90 -85 dBc/Hz @ 10 Hz Offset -120 -115 dBc/Hz @ 100 Hz Offset -140 -135 dBc/Hz @ 1 KHz Offset -145 -140 dBc/Hz @ 10 KHz Offset -148 -143 dBc/Hz @ 100 KHz Offset VC-TXO32-S3 VC-TCXO Option +2.5 V Input Impedance 100kΩ Min. ±10 ±15 ppm Positive Slope ≤10% Linearity Operating Temperature -40 +85 °C Storage Temperature -55 +105 °C Control Voltage Range +0.5 Pullability +1.5 * N Option Vs. Temp (-40 ~ +85°C) BN Option Part Numbering Guide: Example ECS-TXO32-S3-33-200-BN-TR ECS ECS - Series - TXO32-S3 = Clipped Sine Wave TCXO Frequency Abbreviations 200 = 20.000 MHz - Voltage 33 = 3.3V ±5% 30 = 3.0V ±5% Stability B = ±280 ppb Temperature M= -20 ~ +70°C Y = -30 ~ +85°C N = -40 ~ +85°C Packaging TR = Tape & Reel VC-TXO32-S3 = Clipped Sine Wave VC-TCXO 15351 West 109th Street | Lenexa, KS 66219 | Phone: 913.782.7787 | Fax: 913.782.6991 | www.ecsxtal.com ECS-TXO32-S3 & ECS- VC-TXO32-S3 Clipped Sine Wave TCXO / VCTCXO Package Dimensions (mm) Figure 2) Land Pattern Figure 1) Top, Side, and Bottom views ECS-TXO32-S3 Developed Frequencies ECS-VC-TXO32-S3 Pin Connections Pin Connections * Abbreviation Frequency (MHz) 10.000 #1 N/C #1 Voltage Control 100 #2 Ground #2 Ground 128 12.800 Output #3 Output 192 19.200 VDD 200 20.000 400 40.000 500 50.000 #3 #4 VDD #4 Figure 3) Suggested Reflow Profile 15351 West 109th Street | Lenexa, KS 66219 | Phone: 913.782.7787 | Fax: 913.782.6991 | www.ecsxtal.com
ECS-TXO32-S3-33-100-BN-TR
物料型号: - ECS-TXO32-S3 - ECS-VC-TXO32-S3

器件简介: - 这些是Stratum 3级别的剪切正弦波温度补偿晶体振荡器(TCXO)/电压控制晶体振荡器(VCTCXO),封装尺寸为3.2 x 2.5 x 0.9 mm,适用于Femtocell、Nanocell和仪器应用。

引脚分配: - ECS-TXO32-S3: - #1:N/C(无连接) - #2:地 - #3:输出 - #4:电源 - ECS-VC-TXO32-S3: - #1:电压控制 - #2:地 - #3:输出 - #4:电源

参数特性: - 频率范围:9.600 MHz 至 50.000 MHz - 频率容差:±1.0 ppm - 温度稳定性:+280 ppb - 电源电压:+3.135 V 至 +3.465 V - 电流消耗:3.0 mA(在25°C,3.3V电源,1.5V Cload=10KΩ//10pF条件下) - 输出波形:剪切正弦波 - 输出电平:0.8 Vp-p - 输出负载:10KΩ//10pF - 启动时间:2 ms - 相位噪声:在10Hz偏移处为-90 dBc/Hz,100Hz偏移处为-120 dBc/Hz,1kHz偏移处为-140 dBc/Hz

功能详解: - 提供了详细的电气特性表,包括频率稳定性、电源和负载变化对频率的影响、老化率和整体稳定性。 - VC-TXO32-S3型号提供了电压控制功能,具有控制电压范围和可调性。

应用信息: - 适用于Femtocell、Nanocell和仪器应用。

封装信息: - 提供了封装尺寸和引脚布局的详细图纸。
ECS-TXO32-S3-33-100-BN-TR 价格&库存

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