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NCC5003MGL

NCC5003MGL

  • 厂商:

    CALMIRCO

  • 封装:

  • 描述:

    NCC5003MGL - BUSSED RESISTOR NETWORK - California Micro Devices Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
NCC5003MGL 数据手册
CALIFORNIA MICRO DEVICES NCC BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surface-mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These chips are manufactured using advanced thin film processing techniques and are 100% electrically tested and visually inspected. STANDARD NETWORK SCHEMATIC DIAGRAM 90 Formats R1 R2 R3 R4 R5 R6 R7 R8 60 Die Size: 90±3 x 60±3 mils Bonding Pads: 5x7 mils typical ELECTRICAL SPECIFICATIONS Parameter TCR Operating Voltage Power Rating (per resistor) Thermal Shock High Temperature Exposure Moisture Life Noise Short Time Overload Insulation Resistance –55°C to 125°C –55°C to 125°C @ 70°C (Derate linearly to 0@150°C) Method 107 MIL-STD-202F 100Hrs @ 150°C Ambient Method 106 MIL-STD-202F Method 108 MIL-STD-202F (125°C/1000hr) Method 308 MIL-STD-202F ≥250kΩ MIL-R-83401 @25°C Test Conditions ±100ppm/C 50Vdc 50mw ±0.25%@∆R ±0.25%∆R ±0.5%∆R ±0.5%∆R –35dB –30dB 0.25% 1 x 101 2 Ω Max Max Max Max Max Max Max Max Max Max Min. M E C H A N I C A L S P E C I F I C AT I O N S Substrate Isolation Layer Backing Metalization Passivation Silicon 10 ±2 mils thick Si02 10,000Å thick, min Lapped (gold optional) Aluminum 10,000Å thick, min (15,000Å gold optional) Silicon Nitride VA L U E S 8 resistors from 100Ω to 500KΩ PA C K AG I N G Two inch square trays of 196 chips maximum is standard. N OT E S 1. Resistor pattern may vary from one value to another. PA R T N U M B E R D E S I G N AT I O N NCC Series 5003 Value First 3 digits are significant value. Last digit repressents number of zeros. R indicates decimal point. F Tolerance D = ±0.5% F = ±1% G = ±2% J = ±5% K = ±10% M = ±20% C0970500 A TCR No Letter = ±100ppm A = ±50ppm B = ±25ppm G Bond Pads G = Gold No Letter = Aluminum W Backing W = Gold L = Lapped No Letter = Either P Ratio Tolerance No Letter = 1% P = 0.5% © 2000 California Micro Devices Corp. All rights reserved. 6/2/2000 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1
NCC5003MGL
1. 物料型号: - 型号:5003

2. 器件简介: - 加利福尼亚微设备公司的电阻阵列是表面贴装封装电阻网络的混合等效产品。电阻间距为十英吋,减少了实际占用空间。这些芯片使用先进的薄膜加工技术制造,并且全部经过100%的电气测试和视觉检查。

3. 引脚分配: - 芯片尺寸:90±3 x 60±3 mils - 焊盘:5x7 mils典型值

4. 参数特性: - 温度系数(TCR):-55°C至125°C,±100ppm/C最大值 - 工作电压:-55°C至125°C,50V直流最大值 - 功率等级(每电阻):在70°C时50mw最大值(线性降低至150°C时为0) - 热冲击:按照MIL-STD-202F方法107,0.25%@AR最大值 - 高温暴露:在150°C环境下100小时,±0.25%R最大值 - 湿度:按照MIL-STD-202F方法106,±0.5%AR最大值 - 寿命:按照MIL-STD-202F方法108(125°C/1000小时),±0.5%AR最大值 - 噪音:按照MIL-STD-202F方法308,-35dB最大值,>250k时-30dB - 短期过载:按照MIL-R-83401,0.25%最大值 - 绝缘电阻:在25°C时,最小值为1×10^12欧姆

5. 功能详解: - 该电阻阵列由多个电阻组成,具有不同的容差、TCR和背衬选项。电阻值的前三位数字代表有效值,最后一位数字代表零的数量。R表示小数点。

6. 应用信息: - 该电阻阵列适用于需要精确电阻网络的应用,如信号处理、模拟电路等。

7. 封装信息: - 基板:硅片,厚度10+2 mils - 隔离层:Si02,最小厚度10,000A - 背衬:打磨(可选镀金) - 金属化:铝,最小厚度10,000A(可选15,000A金) - 钝化:硅氮化物
NCC5003MGL 价格&库存

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