NESG2021M16-T3

PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 • • DESCRIPTION NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE Notes: 1. MSG = S21 S12 2. Collector to base capacitance when the emitter grounded. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. DC PARAMETERS AND CONDITIONS Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Output Power at 1dB Compression Point at VCE = 3 V, ICQ = 12 mA, f = 2 GHz Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain3 at VCE = 2 V, IC = 5 mA UNITS dB dB dB dB dB dB dBm 15.0 20.0 17.0 MIN NESG2021M16 M16 TYP 1.3 10.0 0.9 18.0 22.5 19.0 9 17 20 25 0.1 0.2 100 100 130 190 260 1.2 MAX Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 12 mA, f = 2 GHz dBm GHz pF nA nA California Eastern Laboratories NESG2021M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS UNITS V V V mA mW °C °C RATINGS 13.0 5.0 1.5 35 175 150 -65 to +150 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M16 6-PIN LEAD-LESS MINIMOLD Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB. 1.0±0.05 0.8+0.07 -0.05 0.15±0.05 0.125+0.15 -0.0 ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape 0.4 1 1.2+0.07 -0.05 0.8 NESG2021M16-T3-A 10 K pcs reel 2 0.4 3 0.5±0.05 PIN CONNECTIONS 4. Base 1. Collector 5. Emitter 2. Emitter 6. Emitter 3. Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 4 5 6 zE 11/13/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. 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