CAT25C08YE-GT3

Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES I 10 MHz SPI compatible I 1.8 to 5.5 volt operation I SPI modes (0,0 & 1,1) I 32-byte page write buffer I Self-timed write cycle I Hardware and software protection I Block write protection DESCRIPTION The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/ 16 features a 32-byte page write buffer. The device operates via the SPI bus serial interface and is enabled though a Chip Select (CS). In addition to the Chip Select, the clock input (SCK), data in (SI) and data out (SO) are required to access the device. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. The CAT25C08/16 is designed with software and hardware write protection features including Block Write protection. The device is available in 8-pin DIP, 8-pin SOIC and 8-pin TSSOP packages. – Protect 1/4, 1/2 or all of EEPROM array I Low power CMOS technology I 1,000,000 program/erase cycles I 100 year data retention I Industrial temperature range I RoHS-compliant packages For Ordering Information details, see page 15. PIN CONFIGURATION PDIP (L) SOIC (V) TSSOP (Y) CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI FUNCTIONAL SYMBOL VCC SI CS WP HOLD CAT25C08 CAT25C16 SO PIN FUNCTIONS Pin Name SO SCK WP VCC VSS CS SI HOLD SCK Function Serial Data Output Serial Clock Write Protect Power Supply Ground Chip Select Serial Data Input Suspends Serial Input VSS © 2006 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 1016, Rev. C CAT25C08/16 ABSOLUTE MAXIMUM RATINGS* Temperature Under Bias ................. –55°C to +125°C Storage Temperature ....................... –65°C to +150°C Voltage on any Pin with Respect to VSS(1) .................. –1.5V to +VCC +1.5V VCC with Respect to VSS ................................ –0.5V to +6.0V Package Power Dissipation Capability (Ta = 25°C) ................................... 1.0W Lead Soldering Temperature (10 secs) ............ 300°C Output Short Circuit Current(2) ........................ 100 mA RELIABILITY CHARACTERISTICS Symbol NEND(3) TDR(3) VZAP (3) *COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Parameter Endurance Data Retention ESD Susceptibility Latch-up Min. 1,000,000 100 2000 100 Typ. Max. Units Cycles/Byte Years Volts mA ILTH(3)(4) D.C. OPERATING CHARACTERISTICS VCC = +1.8V to +5.5V, unless otherwise specified. Limits Symbol ICC1 ICC2 ISB(6) ILI ILO VIL(5) VIH (5) Parameter Power Supply Current (Operating Write) Power Supply Current (Operating Read) Power Supply Current (Standby) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage Min. Typ. Max. 5 3 1 2 3 Units mA mA µA µA µA V V V V Test Conditions VCC = 5V @ 5MHz SO=open; CS=Vss VCC = 5.5V FCLK = 5MHz CS = VCC VIN = VSS or VCC VOUT = 0V to VCC, CS = 0V -1 VCC x 0.7 VCC - 0.8 VCC x 0.3 VCC + 0.5 0.4 VOL1 VOH1 VOL2 VOH2 2.5V≤VCC