CAT25C17RA-1.8TE13

CAT25C17RA-1.8TE13

  • 厂商:

    CATALYST

  • 封装:

  • 描述:

    CAT25C17RA-1.8TE13 - 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM - Catalyst Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
CAT25C17RA-1.8TE13 数据手册
CAT25C11/03/05/09/17 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM FEATURES s 10 MHz SPI compatible s 1.8 to 6.0 volt operation s Hardware and software protection s Low power CMOS technology s SPI modes (0,0 & 1,1)* s Commercial, industrial, automotive and extended s 100 year data retention s Self-timed write cycle H GEN FR ALO EE LE s 1,000,000 program/erase cycles A D F R E ETM s 8-pin DIP/SOIC, 8/14-pin TSSOP and 8-pin MSOP s 16/32-byte page write buffer s Write protection temperature ranges – Protect first page, last page, any 1/4 array or lower 1/2 array DESCRIPTION The CAT25C11/03/05/09/17 is a 1K/2K/4K/8K/16K-Bit SPI Serial CMOS EEPROM internally organized as 128x8/256x8/512x8/1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C11/03/05 features a 16-byte page write buffer. The 25C09/17 features a 32-byte page write buffer.The device operates via the SPI bus serial interface and is enabled though a Chip Select (CS). In addition to the Chip Select, the clock input (SCK), data in (SI) and data out (SO) are required to access the device. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. The CAT25C11/03/05/09/17 is designed with software and hardware write protection features including Block Write protection. The device is available in 8-pin DIP, 8-pin SOIC, 8/14-pin TSSOP and 8-pin MSOP packages. PIN CONFIGURATION TSSOP Package (U14, Y14) CS SO NC NC NC WP VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC HOLD NC NC NC SCK SI SOIC Package (S, V) CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI DIP Package (P, L) CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI CS SO TSSOP Package (U, Y) 1 2 3 4 8 7 6 5 VCC HOLD SCK SI WP VSS MSOP Package (R, Z)* CS SO WP VSS 1 2 3 4 8 7 6 5 BLOCK DIAGRAM SENSE AMPS SHIFT REGISTERS VCC HOLD SCK SI PIN FUNCTIONS Pin Name SO SCK WP VCC VSS CS SI HOLD NC *CAT25C11/03 only WORD ADDRESS BUFFERS COLUMN DECODERS Function Serial Data Output Serial Clock Write Protect +1.8V to +6.0V Power Supply Ground Chip Select Serial Data Input Suspends Serial Input No Connect STATUS REGISTER HIGH VOLTAGE/ TIMING CONTROL SO SI CS WP HOLD SCK I/O CONTROL SPI CONTROL LOGIC BLOCK PROTECT LOGIC CONTROL LOGIC XDEC EEPROM ARRAY DATA IN STORAGE * Other SPI modes available on request. © 2004 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 1017, Rev. J CAT25C11/03/05/09/17 ABSOLUTE MAXIMUM RATINGS* Temperature Under Bias ................. –55°C to +125°C Storage Temperature ....................... –65°C to +150°C Voltage on any Pin with Respect to VSS(1) .................. –2.0V to +VCC +2.0V VCC with Respect to VSS ................................ –2.0V to +7.0V Package Power Dissipation Capability (Ta = 25°C) ................................... 1.0W Lead Soldering Temperature (10 secs) ............ 300°C Output Short Circuit Current(2) ........................ 100 mA RELIABILITY CHARACTERISTICS Symbol NEND (3) *COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Parameter Endurance Data Retention ESD Susceptibility Latch-Up Min. 1,000,000 100 2000 100 Max. Units Cycles/Byte Years Volts mA Reference Test Method MIL-STD-883, Test Method 1033 MIL-STD-883, Test Method 1008 MIL-STD-883, Test Method 3015 JEDEC Standard 17 TDR(3) VZAP (3) ILTH(3)(4) D.C. OPERATING CHARACTERISTICS VCC = +1.8V to +6.0V, unless otherwise specified. Limits Symbol ICC1 ICC2 ISB(6) ILI ILO VIL(5) VIH (5) Parameter Power Supply Current (Operating Write) Power Supply Current (Operating Read) Power Supply Current (Standby) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage Min. Typ. Max. 5 3 1 2 3 Units mA mA µA µA µA V V V V Test Conditions VCC = 5V @ 5MHz SO=open; CS=Vss VCC = 5.5V FCLK = 5MHz CS = VCC VIN = VSS or VCC VOUT = 0V to VCC, CS = 0V -1 VCC x 0.7 VCC - 0.8 VCC x 0.3 VCC + 0.5 0.4 VOL1 VOH1 VOL2 VOH2 2.7V≤VCC
CAT25C17RA-1.8TE13
### 物料型号 - CAT25C11/03/05/09/17:这是一系列SPI串行CMOS EEPROM的型号,提供1K/2K/4K/8K/16K位的存储容量。

### 器件简介 - CAT25C11/03/05/09/17 是使用先进的CMOS技术制造的SPI串行CMOS EEPROM,具有较低的功耗和多种温度范围的应用。它们通过SPI总线接口进行操作,支持多种操作模式,并具有软件和硬件写保护功能。

### 引脚分配 - SO:串行数据输出 - SCK:串行时钟 - WP:写保护 - Vcc:+1.8V至+6.0V电源供电 - Vss:地 - CS:芯片选择 - SI:串行数据输入 - HOLD:暂停串行输入 - NC:无连接

### 参数特性 - 操作电压:1.8V至6.0V - 速度:与10MHz SPI兼容 - 功耗:低功耗CMOS技术 - 温度范围:商业、工业、汽车和扩展温度范围 - 编程/擦除周期:1,000,000次 - 数据保持:100年 - 页写缓冲区:16/32字节

### 功能详解 - 设备通过SPI总线接口操作,支持直接与多种流行的微控制器接口。包含8位指令寄存器,接收操作码定义要执行的操作。支持多种指令,包括使能写操作、禁用写操作、读取状态寄存器、写入状态寄存器、从内存读取数据和向内存写入数据。

### 应用信息 - 适用于需要低功耗、高可靠性存储解决方案的应用,如汽车电子、工业控制和商业电子产品。

### 封装信息 - DIP:8引脚双列直插式封装 - SOIC:8引脚小外形集成电路封装 - TSSOP:8/14引脚薄型小外形封装 - MSOP:8引脚微型小外形封装
CAT25C17RA-1.8TE13 价格&库存

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