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CAT6218-300TD-GT3

CAT6218-300TD-GT3

  • 厂商:

    CATALYST

  • 封装:

  • 描述:

    CAT6218-300TD-GT3 - 300mA CMOS LDO Regulator - Catalyst Semiconductor

  • 数据手册
  • 价格&库存
CAT6218-300TD-GT3 数据手册
CAT6218 300mA CMOS LDO Regulator FEATURES Guaranteed 300mA output current Low dropout voltage of 180mV typical at 300mA Stable with 1μF ceramic output capacitor External 10nF bypass capacitor for low noise Quick-start feature No-load ground current of 55μA typical Full-load ground current of 80μA typical ±1.0% initial accuracy (VOUT ≥ 2.0V) ±2.0% accuracy over temperature (VOUT ≥ 2.0V) “Zero” current shutdown mode Fold-back current limit and under-voltage lockout Thermal protection Thin SOT23-5 package DESCRIPTION The CAT6218 is a 300mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150μs. With zero shutdown current and low ground current of 55μA typical, the CAT6218 is ideal for batteryoperated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.1V typical. The CAT6218 offers 1% initial accuracy and low dropout voltage, 180mV typical at 300mA. Stable operation is provided with a small value ceramic capacitor, reducing required board space and compo– nent cost. Other features include fold-back current current limit and thermal protection. The device is available in the low profile (1mm max height) 5-lead thin SOT23 package. APPLICATIONS Cellular phones Battery-powered devices Consumer Electronics For Ordering Information details, see page 9. PIN CONFIGURATION TSOT-23 5-Lead (1mm height) VIN 1 GND 2 EN 3 Top View TYPICAL APPLICATION CIRCUIT 5 VOUT VIN 2.3V to 5.5V OFF ON CIN 1µF VIN VOUT VOUT COUT 1µF CAT6218 EN GND BYP 4 BYP CBYP (Optional) 10nF © Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. MD-10010 Rev. C CAT6218 PIN DESCRIPTIONS Pin # Name Function 1 VIN Supply voltage input. 2 GND Ground reference. Enable input (active high); a 2.5MΩ 3 EN pull-down resistor is provided. Optional bypass capacitor connection 4 BYP for noise reduction and PSRR enhancing. 5 VOUT LDO Output Voltage. BLOCK DIAGRAM VIN VIN EN LDO VOUT VOUT BYP Reference Shutdown Switch GND Figure 2. CAT6218 Functional Block Diagram PIN FUNCTION VIN is the supply pin for the LDO. A small 1μF ceramic bypass capacitor is required between the VIN pin and ground near the device. When using longer connections to the power supply, CIN value can be increased without limit. The operating input voltage range is from 2.3V to 5.5V. EN is the enable control logic (active high) for the regulator output. It has a 2.5MΩ pull-down resistor, which assures that if EN pin is left open, the circuit is disabled. VOUT is the LDO regulator output. A small 1μF ceramic bypass capacitor is required between the VOUT pin and ground for stability. For better transient response, its value can be increased to 4.7μF. The capacitor should be located near the device. ESR domain is 5mΩ to 500mΩ. VOUT can deliver a maximum guaranteed current of 300mA. For input-tooutput voltages higher than 1V, a continuous 300mA output current might turn-on the thermal protection. A 250Ω internal shutdown switch discharges the output capacitor in the no-load condition. GND is the ground reference for the LDO. The pin must be connected to the ground plane on the PCB. BYP is the reference bypass pin. An optional 0.01μF capacitor can be connected between BYP pin and GND to reduce the output noise and enhance the PSRR at high frequency. ABSOLUTE MAXIMUM RATINGS (1) Parameter VIN VEN, VOUT Junction Temperature, TJ Power Dissipation, PD Storage Temperature Range, TS Lead Temperature (soldering, 5 sec.) ESD Rating (Human Body Model) Rating 0 to 6.5 -0.3 to VIN + 0.3 +150 Internally Limited (2) -65 to +150 260 3 Unit V V °C mW °C °C kV RECOMMENDED OPERATING CONDITIONS (3) Parameter VIN VEN Junction Temperature Range, TJ Package Thermal Resistance (SOT23-5), θJA Range 2.3 to 5.5 0 to VIN -40 to +125 235 Unit V V °C °C/W Typical application circuit with external components is shown on page 1. Notes: (1) Exceeding maximum rating may damage the device (2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax – TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. (3) The device is not guaranteed to work outside its operating rating. Doc. No. MD-10010 Rev. C 2 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT6218 ELECTRICAL OPERATING CHARACTERISTICS (1) VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter VOUT-ACC Output Voltage Accuracy TCOUT VR-LINE VR-LOAD VDROP Output Voltage Temp. Coefficient Line Regulation Load Regulation Dropout Voltage (2) VIN = VOUT + 1.0V to 5.5V IOUT = 100μA to 300 mA IOUT = 300mA IOUT = 0μA IOUT = 300mA IGND-SD PSRR ISC TON eN REN VUVLO ESR Shutdown Ground Current Power Supply Rejection Ratio Output short circuit current limit Turn-On Time Output Noise Voltage (3) Conditions Initial accuracy for VOUT ≥ 2.0V (4) Min -1.0 -2.0 Typ Max +1.0 +2.0 Unit % ppm/ºC 40 -0.2 -0.4 0.7 180 55 80 1 2 64 54 180 150 45 250 2.5 2.1 5 VIN = 2.3 to 5.5V VIN = 2.3 to 5.5V, 0ºC to +125ºC junction temperature VIN = 2.3 to 5.5V VEN = 0.4V VEN = VIN 1.8 1.6 0.4 0.15 1.5 160 10 1 4 500 ±0.1 +0.2 +0.4 1.2 1.5 250 300 75 90 %/V % mV IGND Ground Current μA VEN < 0.4V f = 1kHz, CBYP = 10nF f = 20kHz, CBYP = 10nF VOUT = 0V CBYP = 10nF BW = 10Hz to 100kHz μA dB mA μs μVrms Ω MΩ V mΩ ROUT-SH Shutdown Switch Resistance Enable pull-down resistor Under-voltage lock out (UVLO) threshold COUT equivalent series resistance Enable Input VHI VLO IEN Logic High Level Logic Low Level Enable Input Current V V μA Thermal Protection TSD THYS Thermal Shutdown Thermal Hysteresis ºC ºC Notes: (1 Specification for 2.85V output version unless specified otherwise. (2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. (3) Specification for 1.8V output version. (4) For VOUT < 2.0V, the initial accuracy is ±2% and across temperature ±3%. © Catalyst Semiconductor, Inc. 3 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice CAT6218 TYPICAL CHARACTERISTICS (shown for 2.85V output version) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Dropout Characteristics 3.0 100μA Line Regulation 2.87 OUTPUT VOLTAGE [V] 2.86 2.85 2.84 2.83 2.82 OUTPUT VOLTAGE [V] 2.5 2.0 300mA 1.5 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 INPUT VOLTAGE [V] 6.0 2.5 3.0 3.5 4.0 4.5 5.0 INPUT VOLTAGE [V] 5.5 Load Regulation 2.95 OUTPUT VOLTAGE [V] Output Voltage vs. Temperature 2.87 OUTPUT VOLTAGE [V] 2.86 2.85 2.84 2.83 2.82 -40 -10 20 50 80 110 140 TEMPERATURE [°C] 2.90 2.85 2.80 2.75 0 50 100 150 200 250 300 OUTPUT LOAD CURRENT [mA] Ground Current vs. Load Current 100 GROUND CURRENT [μ A] 90 80 70 60 50 0 25 50 75 100 125 150 OUTPUT LOAD CURRENT [mA] Ground Current vs. Temperature 65 GROUND CURRENT [ μ A] 60 55 50 45 -40 -10 20 50 80 110 140 TEMPERATURE [°C] Doc. No. MD-10010 Rev. C 4 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT6218 TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Output Voltage vs. Load Current 3.0 GROUND CURRENT [ μ A] 70 60 50 40 30 20 10 0 Ground Current vs. Input Voltage OUTPUT VOLTAGE [V] 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 600 700 OUTPUT LOAD CURRENT [mA] 0.0 1.0 2.0 3.0 4.0 5.0 INPUT VOLTAGE [V] 6.0 Dropout vs. Temperature (300mA Load) 350 DROPOUT VOLTAGE [mV] Dropout vs. Load Current 300 DROPOUT VOLTAGE [mV] 250 200 150 100 50 0 0 50 100 150 200 250 300 OUTPUT LOAD CURRENT [mA] 300 250 200 150 100 -40 -10 20 50 80 110 140 TEMPERATURE [°C] Enable Threshold vs. Input Voltage 1.6 ENABLE THRESHOLD [V] PSRR vs. Frequency (10mA Load) 80 70 CBY P = 10nF 1.2 PSRR [dB] 60 50 40 30 20 10 CBY P = 0 0.8 0.4 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE [V] © Catalyst Semiconductor, Inc. 5 0 0.01 0.1 1 10 FREQUENCY [kHz] 100 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice CAT6218 TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. PSRR (30mA Load) 70 60 50 PSRR [dB] 40 30 20 10 0 0 100 200 300 400 VIN - VOUT [mV] 500 100kHz 1kHz 10kHz PSRR (200mA Load) 70 60 50 PSRR [dB] 40 30 20 10 0 0 100 200 300 400 VIN - VOUT [mV] 500 100kHz 1kHz 10kHz Doc. No. MD-10010 Rev. C 6 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT6218 TRANSIENT CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Note: All transient characteristics are generated using the evaluation board CAT621XEVAL1. Enable Turn-On (100μA Load) Enable Turn-Off (100μA Load) Enable Turn-On (300mA Load) Enable Turn-Off (300mA Load) Line Transient Response (3.85V to 4.85V) Load Transient Response (0.1mA to 300mA) © Catalyst Semiconductor, Inc. Characteristics subject to change without notice 7 Doc. No. MD-10010 Rev. C CAT6218 PACKAGE OUTLINE DRAWING 5-LEAD TSOT-23 (1) (2) D e SYMBOL A A1 A2 b c D E1 E MIN 0.01 0.80 0.30 0.12 NOM 0.05 0.87 0.15 2.90 BSC 2.80 BSC 1.60 BSC 0.95 TYP MAX 1.00 0.10 0.90 0.45 0.20 E E1 e L L1 L2 θ 0º 0.30 0.40 0.60 REF 0.25 BSC 0.50 8º TOP VIEW A2 A θ b A1 L1 L c L2 SIDE VIEW END VIEW For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. Notes: (1) All dimensions are in millimeters, angles in degrees. (2) Refer JEDEC MO-193. Doc. No. MD-10010 Rev. C 8 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT6218 EXAMPLE OF ORDERING INFORMATION Prefix CAT (1) (2) (3) (5) Device # 6218 Suffix -180 TD -G T3 Company ID Product Number 6218 VOUT Voltage (4) 150: 1.50V 180: 1.80V 240: 2.40V 250: 2.50V 270: 2.70V 280: 2.80V 285: 2.85V 300: 3.00V 320: 3.20V 330: 3.30V Package TD: TSOT-23 Lead Finish G: NiPdAu Tape & Reel T: Tape & Reel 3: 3,000/Reel ORDERING INFORMATION Part Number CAT6218-150TD-GT3 (4) VOUT Voltage 1.50V 1.80V 2.40V 2.50V 2.70V 2.80V 2.85V 3.00V 3.20V 3.30V Package TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 TSOT-23 Quantity per Reel 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 CAT6218-180TD-GT3 CAT6218-240TD-GT3 CAT6218-250TD-GT3 CAT6218-280TD-GT3 CAT6218-285TD-GT3 CAT6218-320TD-GT3 (4) CAT6218-270TD-GT3 (4) (4) CAT6218-300TD-GT3 (4) CAT6218-330TD-GT3 For Product Top Mark Codes, click here: http://www.catsemi.com/techsupport/producttopmark.asp Notes: (1) All packages are RoHS-compliant (Lead-free, Halogen-free). (2) The standard finish is NiPdAu. (3) The device used in the above example is a CAT6218-180 TD-GT3 (VOUT = 1.8V, in an TSOT-23 package, NiPdAu, Tape and Reel, 3,000/Reel). (4) Standard voltages are 1.8V, 2.4V, 2.7V, 3.0V, and 3.3V. For other voltage options, please contact your nearest Catalyst Semiconductor Sales office. (5) Top marking for CAT6218 is RU. © Catalyst Semiconductor, Inc. Characteristics subject to change without notice 9 Doc. No. MD-10010 Rev. C REVISION HISTORY Date 06/19/2007 02/11/2008 21-May-08 Rev. A B C Reason Preliminary Revision Update Electrical Operating Characteristics Update Package Outline Drawing Change Document Number from MD-4010 to MD-10010 Add other voltage options Add link to Top Mark Codes Copyrights, Trademarks and Patents © Catalyst Semiconductor, Inc. Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Adaptive Analog™, Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™, Quad-Mode™ and Quantum Charge Programmable™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters 2975 Stender Way Santa Clara, CA 95054 Phone: 408.542.1000 Fax: 408.542.1200 www.catsemi.com Document No: MD-10010 Revision: C Issue date: 05/21/08
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