CAT808NTBI-21-GT3

CAT808 Low-Power Precision Voltage Detector FEATURES Ultra Low Current Consumption 2.4µA Accurate Voltage Detection Threshold Fine Voltage Detection Threshold Resolution Active Low Open Drain Output Available in 5-pin TSOT- 23 and 3-pin SOT- 89 RoHS compliant packages Industrial temperature range -40°C to +85°C The CAT808 open-drain output is active low until the VDD voltage exceeds the detection threshold. A low hysteresis is built into the device to minimize output “chatter”, while VDD passes through the detection threshold, and the output transitions high. After the CAT808 asserts the output high condition, it continues to monitor VDD until it drops below the detection threshold, when the output goes low until VDD once again exceeds the detection threshold. DESCRIPTION The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.2V are provided with 0.1V resolution and ±3.0% accuracy. APPLICATIONS Battery-Powered Systems Power Supply Monitoring Handheld and Portable Equipment Processor Supervisor Reset For Ordering Information details, see page 7. PIN CONFIGURATION SOT-89 OUT 1 VDD 2 GND 3 TYPICAL APPLICATION 5-Lead Thin SOT-23 VDD IN CAT808 OUT DC-DC CONVERTER SHDN GND OUT OUT 1 VDD 2 GND 3 5 NC Battery Voltage 10kΩ 4 NC GND Note: The value of the pull-up resistor is not critical © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 3024 Rev. A CAT808 ABSOLUTE MAXIMUM RATINGS Parameters Temperature under Bias Storage Temperature Voltage on any Pin with Respect to GND VDD with Respect to GND Lead Soldering temperature (10 seconds) Power Dissipation TSOT-23-5 SOT-89 (2)(3) (1) Ratings -55 to +125 -65 to +150 -2.0 to VDD + 2.0 -2.0 to 7.0 +300 250 500 Units ºC ºC V V ºC mW mW RECOMMENDED OPERATING CONDITIONS Parameters VDD Operating Temperature Range DC ELECTRICAL CHARACTERISTICS TA = -40ºC to +85ºC, VDD = 1.2V to 6.0V Symbol VDET VDET IDD Parameter Detection Voltage, 27 Detection Voltage, 32 Current Consumption Conditions TA = -40ºC to +85ºC TA = -40ºC to +85ºC VDD = 4.0V VDD = 5.0V VDD = 6.0V IOUT ILEAK TPHL/LH Δ - VDET ΔTA ● -VDET Notes: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns. Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V. The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation: Ratings +1.2 to +6.0 -40 to +85 Units V ºC Min Typ. Max 2.62 3.12 VDD=1.2V VDD=2.4V 0.6 2.9 2.7 3.2 2.4 3.5 5 1.4 5 2.78 3.28 5 7 10 1 60 Units V µA Output SinkCurrent Output Leakage Current Response Time Detection Voltage Temperature Coefficient(4) VDS = 0.5V mA µA µs VDS = 5.0V, VDD = 5.0V – TA = -40ºC to +85ºC ±10 ±100 ppm/ºC (2) (3) (4) Δ − VDET × 1,000,000[ppm /º C] ΔTA • - VDET Doc. No. 3024 Rev. A 2 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 OPERATION – VOLTAGE DETECTOR The CAT808 has an active low output that asserts (pulls low) when the supply voltage drops below the detection threshold voltage (VDET). The open-drain output requires an external pull-up resistor between the output pin and the supply voltage (as shown in the typical application diagram). On power-up, ¯¯¯¯ OUT is held active low until the supply voltage (VDD) rises above VDET. While VDD is above VDET, ¯¯¯¯ stays OUT high until VDD drops below VDET, then ¯¯¯¯ once OUT again goes low. BLOCK DIAGRAM VDD OUT TIMING DIAGRAM VOLTAGE REFERENCE VDD* VDET(MAX) VDET VDET(MIN) GND TPLH VOH TPHL VDET(MAX) VDET VDET(MIN) OUT Slews with VDD OUT * Voltage of VDD below 1 volt will not be able to maintain low output. PIN FUNCTIONS Pin VDD GND ¯¯¯¯ OUT NC Function Voltage Input and Power Supply Ground Pin Active Low Open Drain output No Connect, the pin is electrically open © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 3 Doc. No. 3024 Rev. A CAT808 TYPICAL ELECTRICAL OPERATING CHARACTERISTICS Typical values at TA = 25°C. VDD Supply Current vs. VDD Supply Voltage 5 VDET Detection Voltage vs. Temperature 2.71 Supply Current (μA) 4 2.705 2 VDET (V) 2.7 2 3 4 5 6 3 1 0 2.695 -40 -5 30 65 100 Supply Voltage (V) Temperature (ºC) Response time vs. Load Capacitance 100 IOUT Transistor Output Current vs. VDD Supply Voltage 10.00 -40ºC Response time [ms] 10 TPLH (mA) 8.00 +25ºC 6.00 +90ºC 1 IOUT 0.1 4.00 TPHL 0.01 0.001 0.01 0.000001 0.00001 0.1 0.0001 1 0.001 10 0.01 100 0.1 2.00 0.00 1.00 1.50 2.00 2.50 Load capacitance [nF] VDD (V) Doc. No. 3024 Rev. A 4 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 PACKAGE INFORMATION 5-LEAD TSOT-23 PACKAGE e e E1 E E1 e1 D GAUGE PLANE L2 b A1 L L1 A2 A c SYMBOL A A1 A2 b c D E E1 e e1 L L1 L2 q Notes: MIN — 0.01 0.80 0.30 0.12 0.30 NOM — 0.05 0.87 — 0.15 2.90BSC 2.80BSC 1.60BSC 0.95BSC 1.90BSC 0.40 0.60REF 0.25BSC MAX 1.00 0.10 0.90 0.45 0.20 0.50 0º 8º (1) (2) All dimensions are in millimeters. Complies with JEDEC specification MO-193. © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 5 Doc. No. 3024 Rev. A CAT808 3-LEAD SOT-89 PACKAGE D D1 E H L e e1 A A1 b b1 b C SYMBOL A A1 L b b1 C D D1 H E e1 e Notes: MIN 1.40 0.30 0.80 0.36 0.41 0.38 4.40 1.40 3.94 2.40 2.90 1.45 NOM 1.50 0.40 – 0.42 0.47 0.40 4.50 1.60 – 2.50 3.00 1.50 MAX 1.60 0.50 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 1.55 (1) (2) All dimensions are in millimeters. Lead frame material: copper. Doc. No. 3024 Rev. A 6 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 EXAMPLE OF ORDERING INFORMATION Prefix Device # Suffix CAT 808N TB I -27 Optional Company ID Product Number 808N Temperature Range I = Industrial (-40°C to 85°C) Lead Finish G: NiPdAu Blank: Matte-Tin Tape & Reel T: Tape & Reel 1: 1000 Reel 3: 3000 Reel Package TB: TSOT-23-5 TF: SOT-89 Voltage Detection Level -20: 2.0V -32: 3.2V Notes: (1) All packages are RoHS-compliant (Lead-free, Halogen-free). (2) The standard finish is NiPdAu. (3) The device used in the above example is a CAT808NTBI-27-GT3 (TSOT-23-5, Industrial Temperature, 2.7V Detection Level, NiPdAu, Tape & Reel). (4) For additional detection voltage, package and temperature options, please contact your nearest Catalyst Semiconductor Sales office. TOP MARKING Part Number CAT808NTBI-27-G CAT808NTBI-32-G CAT808NTFI-27 CAT808NTFI-32 Package TSOT-23-5 TSOT-23-5 SOT-89 SOT-89 Detection Voltage 2.70 3.20 2.70 3.20 Top Marking MVym MVym AAxxx AAxxx Notes: (1) ym – Year and Month Code. (2) xxx – Assembly location code and last 2 digits of assembly lot code. (3) SOT-89 is offered in Matte-Tin only. © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 7 Doc. No. 3024 Rev. A REVISION HISTORY Date 11/07/06 Rev. A Reason Initial Issue Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Beyond Memory™, DPP™, EZDim™, MiniPot™, and Quad-Mode™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters 2975 Stender Way Santa Clara, CA 95054 Phone: 408.542.1000 Fax: 408.542.1200 www.catsemi.com Document No: 3024 Revision: A Issue date: 11/07/06