2N3020

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO VCBO VEBO ICM PD Tj Tstg Rth(j-a) Rth(j-c) VALUE 80 140 7 1 800 5 +200 -65 to +200 UNITS V V V A mW W ºC ºC 218.7 35 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current Collector Emitter Saturation Voltage SYMBOL BVCEO * BVCBO BVEBO ICBO IEBO VCE(sat) * VBE(sat) * TEST CONDITION IC=30mA,IB=0 IC=100µA, IE=0 IE=100µA, IC =O VCB=90V, IE=0 VCB=90V, IE=0, Ta=150ºC VEB=5V, IC=0 IC =150mA, IB =15mA IC =500mA, IB =50mA IC=150mA, IB =15mA MIN 80 140 7 10 10 10 0.2 0.5 1.1 MAX UNITS V V V nΑ µA nΑ V V V Base Emitter Saturation Voltage Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION DC Current Gain 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain 2N3019 2N3020 Transition Frequency 2N3019 2N3020 Output Capacitance Input Capacitance Noise Figure 2N3019 Collector Base Time Constant rbb'cb'c Cob Cib NF fT IC=50mA, VCE=10V f=20MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=100µA, VCE=10V Rs=1KΩ,f=1KHz IC=10mA,VCB=10V, f=4MHz f=1MHz | hfe | IC=1mA, VCE=5V, f=1KHz SYMBOL hFE* hFE* hFE* hFE* hFE* hFE* TEST CONDITION IC=0.1mA,VCE=10V IC=10mA,VCE=10V IC=150mA,VCE=10V IC=500mA,VCE=10V IC=1A,VCE=10V IC=150mA,VCE=10V Tc= -55ºC MIN MAX UNITS 50 30 90 40 100 40 50 30 15 15 40 100 120 300 120 100 80 30 400 200 100 80 12 60 4 400 MHz MHz pF pF dB ps *Pulse Test: Pulse Width