C44C8

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak * Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range Thermal Resistance Junction to Ambient Junction to Case SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 70 60 5 4 6 2 1.67 30 -55 to +150 C44C11 90 80 UNIT V V V A A W ºC Rth (j-a) Rth (j-c) 75 4.2 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise) DESCRIPTION Collector- Emitter Sustaing Voltage SYMBOL TEST CONDITION VCEO(sus)* IC=100mA, IB=0 C44C8 C44C11 ICES VCE=Rated VCES IEBO VEB=5V, IC=0 hFE* IC=0.2A, VCE=1V IC=2A, VCE=1V VCE(sat) * IC=1A, IB=50mA VBE(sat) * IC=1A, IB=100mA MIN TYP MAX UNIT Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance Current Gain Bandwidth Product Switching Characteristics DESCRIPTION 60 80 100 20 - - 10 100 220 0.5 1.3 V V µA µA V V Ccbo fT VCB=10V, IE=0 f=1MHz VCE=4V, IC=20mA - 50 100 - pF MHz SYMBOL TEST CONDITION MIN - TYP 100 500 75 MAX - UNIT ns ns ns t d + tr IC=1A, IB1=1B2=0.1A Delay Time + Rise Time ts VCC=30V, tp=25µs Storage Time tf Fall Time * Pulse Test Pulse Width =300ms, Duty Cycle