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CDT13003C

CDT13003C

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CDT13003C - NPN SILICON POWER TRANSISTOR - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CDT13003C 数据手册
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter (sus) Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Emitter Current Continuous Peak (1) Power Dissipation @ Ta=25 ºC Derate Above 25ºC Power Dissipation @ Tc=25 ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose: 1/8" from Case for 5 Seconds (1) Pulse Test: Pulse Width=5ms, Duty Cycle=10% ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emitter (sus) Voltage Collector Cut Off Current Emitter Cut Off Current *Pulse Test:- PW=300µ s, Duty Cycle=2% CDT13003Rev_1 230306D SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD PD Tj, Tstg VALUE 600 400 9.0 1.8 3.5 0.75 1.5 2.25 4.5 1.4 11.2 50 480 - 65 to+150 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC Rth (j-c) Rth (j-a) TL 2.08 89 275 ºC/W ºC/W ºC SYMBOL VCBO *VCEO(sus) ICBO IEBO TEST CONDITION IC=1mA, IE=0 IC=10mA, IB=0 VCB=600V, IE=0 VCB=600V, IE=0, Tc=100ºC VEB=9V, IC=0 MIN 600 400 - TYP - MAX 1.0 5.0 1.0 UNIT V V mA mA mA Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION DC Current Gain Collector Emitter Saturation Voltage SYMBOL *hFE *VCE (sat) TEST CONDITION **IC=0.5A, VCE=5V IC=1.5A, VCE=5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,Tc=100ºC Base Emitter Saturation Voltage *VBE (sat) IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A,Tc=100ºC DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain Bandwidth Product Output Capacitance SWITCHING TIME Turn On Time Storage Time Fall Time ** hFE Classification:Note:- Product is pre selected in DC current gain (Groups A to F). CDIL reserves the right to ship any of the groups according to production availability. MARKING SYMBOL fT Cob TEST CONDITION IC=100mA, VCE=10V, f=1MHz VCB=10V, f=0.1MHz MIN 4.0 TYP 21 MAX UNIT MHz pF MIN 11 4 TYP MAX 30 25 0.5 1.0 2.5 1.0 1.0 1.2 1.1 V V V V V V V UNIT ton tstg tf VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A 1.1 4.0 0.7 µs µs µs A 11-16 B 15-19 C 18-22 E 21-25 F 24-30 CDT 13003 A XY CDT 13003 B XY CDT 13003 C XY CDT 13003 E XY CDT 13003 F XY X= Year of Manufacturer Code Y= Month Code *Pulse Test:- PW=300µ s, Duty Cycle=2% CDT13003Rev_1 230306D Continental Device India Limited Data Sheet Page 2 of 4 CDT13003 TO-220 Plastic Package TO-220 Plastic Package B H F C E DIM MIN MAX 16.51 A 14.42 B 9.63 10.67 3.56 4.83 C — 0.90 D 1.15 1.40 E 3.75 3.88 F G 2.29 2.79 3.43 H 2.54 — 0.56 J K 12.70 14.73 2.80 4.07 L 2.03 2.92 M — N 31.24 7 DEG O All diminsions in mm. A N L 1 2 3 D G K 0 J M 0 4 1 2 3 Pin Configuration 1. Base 2. Collector 3. Emitter 4. Collector TO-220 Tube Packing Label 536.00 ±1.5 End Pin 13.74 DEVICE NAME Sr. QTY. A ll Dimensions in mm 50 Pcs./Tube AMMO PACK SIZE 6.87 Tube Thickness Label 92.0 538 .00 Packing Detail PACKAGE Details TO-220 /FP STANDARD PACK Net Weight/ Qty 75. 0 20 Tubes/Ammo Pack 1000 Pcs./Ammo Pack OUTER CARTON BOX Size 17" x 15" x 13.5" 19" x 19" x 19" Qty 16.0K 10.0K Gr Wt 36 kgs 29 kgs INNER CARTON BOX Size 3" x 7.5" x 7.5" 3.5" x 3.7" x 21.5" Qty 1.0K 1.0K 200 pcs/ polybag 396 gm/ 200 pcs 50 pcs/ tube 120 gm/ pcs 50 CDT13003Rev_1 230306D Continental Device India Limited Data Sheet 32.85 Page 3 of 4 CDT13003 Component Disposal Instructions 1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose as per prevailing Environmental Legislation of their Country. 2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE). TO-220 Plastic Package Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com CDT13003Rev_1 230306D Continental Device India Limited Data Sheet Page 4 of 4
CDT13003C
1. 物料型号: - 型号:CDT13003 - 封装:TO-220 Plastic Package

2. 器件简介: - CDT13003是一款NPN硅功率晶体管,适用于照明、开关调节器和电机控制等应用。

3. 引脚分配: - 1. Base(基极) - 2. Collector(集电极) - 3. Emitter(发射极) - 4. Collector(集电极)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):600V - 集电极-发射极电压(VCEO):400V - 基极-发射极电压(VEBO):9.0V - 集电极电流连续(Ilc):1.8A - 峰值集电极电流(ICM):3.5A - 基极电流连续(IB):0.75A - 峰值基极电流(BM):1.5A - 发射极电流连续(IE):2.25A - 峰值发射极电流(IEM):4.5A - 功率耗散@T=25°C(PD):1.4W(德率超过25°C) - 功率耗散@T=25°C(Po):50W(德率超过25°C) - 工作和存储结温范围(Tj, Tstg):-65至+150°C

5. 功能详解: - 电气特性(在25°C下,除非另有说明): - 集电极-基极电压(VCBO):600V - 集电极-发射极电压(VCEO):400V - 集电极截止电流(CBO):1.0mA - 发射极截止电流(IEBO):1.0mA - DC电流增益(hFE):最小11,典型值30 - 集电极-发射极饱和电压(VCE(sat)):0.5V至2.5V,取决于集电极电流和基极电流 - 基极-发射极饱和电压(VBE(sat)):1.0V至1.2V,取决于集电极电流和基极电流 - 电流增益带宽积(fr):4.0MHz - 输出电容(Cab):21pF - 动态特性: - 存储时间(tstg):4.0us - 下降时间(tf):0.7us

6. 应用信息: - 适用于照明、开关调节器和电机控制等应用。

7. 封装信息: - 封装类型:TO-220 - 尺寸和重量信息: - 标准包装:200 pcs/polybag,50 pcs/tube - 内盒尺寸:3.5" x 3.7" x 21.5" - 外盒尺寸:3" x 7.5" x 7.5" - 重量:396 gm/200 pcs,120 gm/50 pcs
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