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CFB1342

CFB1342

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CFB1342 - PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CFB1342 数据手册
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFB1342 (9AW) TO-220FP MARKING:- CFB 1342 Low Freq. Power Amp. Built in Damper Diode Complementry CFD1933 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 80 Collector -Emitter Voltage VEBO 7.0 Emitter Base Voltage IC 4.0 Collector Current (DC) 6.0 Collector Current (Pulse*) 2.0 Collector Power Dissipation @ Ta=25 deg C PC 60 Collector Power Dissipation @ Tc=25 deg C Tj 150.00 Junction Temperature Tstg -55 to +150 Storage Temperature Range *Single Pulse Pw=100ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 80 Collector Emitter Voltage VCBO IC=50uA, IE=0 80 Collector Base Voltage ICBO VCB=80V, IE=0 Collector Cut off Current IEBO VEB=5V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=4mA Collector Emitter Saturation Voltage hFE IC=2A, VCE=3V 1.0 DC Current Gain IC=4A, VCE=3V 500 Dynamic Characteristics ft VCE=5V,IC=0.5A, 12 Transition Frequency f=1MHz Cob VCB=10V, IE=0 45 Collector Output Capacitance f=1MHz UNIT V V V A A W W deg C deg C MAX 100 3.0 1.5 10 - UNIT V V uA mA V K MHz pF Continental Device India Limited Data Sheet Page 1 of 2 TO-220FP (Fully Isolated) Plastic Package A D C B All diminsions in mm. M D IM A B C D E F G H J K L M M IN 9.96 2.60 4.50 3.10 7.90 16.87 0.45 2.56 2.34 — — — M AX 10.36 3.00 4.90 3.30 8.20 17.27 0.50 2.96 2.74 3.08 30.05 0.80 F E 1 2 L 3 PIN CON FIG URATION 1. BASE 2. COLLECTO R 3. EMITTER K J J G 1 2 3 H Packing Detail PACKAGE Details TO-220 / FP STANDARD PACK Net Weight/Qty Size INNER CARTON BOX Qty 1.0K 1.0K Size OUTER CARTON BOX Qty Gr Wt 16.0K 10.0K 36 kgs 29 kgs 200 pcs/polybag 396 gm/200 pcs 50 pcs/tube 120 gm/50 pcs 3" x 7.5" x 7.5" 3.5" x 3.7" x 21.5" 17" x 15" x 13.5" 19" x 19" x 19" Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 2 of 2
CFB1342
### 物料型号 - 型号:CFB1342(9AW) - 封装:TO-220FP(全隔离塑料封装)

### 器件简介 - 制造商:Continental Device India Limited,一家获得ISO/TS 16949、ISO 9001和ISO 14001认证的公司。 - 描述:低频功率放大器,内置阻尼二极管,与CFD1933互补。

### 引脚分配 - 引脚配置:1. 基极(BASE)2. 集电极(COLLECTOR)3. 发射极(EMITTER)

### 参数特性 - 绝对最大额定值: - 集电极-基极电压(VCBO):80V - 集电极-发射极电压(VCEO):80V - 发射极-基极电压(VEBO):7.0V - 集电极电流(DC):4.0A - 集电极电流(脉冲):6.0A - 集电极功率耗散@Ta=25°C:2.0W - 结温:150.00°C - 存储温度范围:-55至+150°C

- 电气特性(Ta=25°C除非另有说明): - 集电极-发射极电压(VCEO):80V - 集电极基极电压(VCBO):80V - 集电极截止电流(ICBO):100μA - 发射极截止电流(IEBO):3.0mA - 集电极-发射极饱和电压(VCE(Sat)):1.5V - DC电流增益(hFE):1.0至10K - 动态特性:500 - 过渡频率:12MHz - 集电极输出电容(Cob):45pF

### 功能详解 - 该晶体管适用于低频功率放大,具有内置的阻尼二极管,可以与CFD1933互补使用。

### 应用信息 - 该晶体管适用于需要低频功率放大的应用场合,如音频放大器等。

### 封装信息 - 封装类型:TO-220FP(全隔离塑料封装) - 尺寸:详细尺寸参数见PDF文档中的图表。
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