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CFB1370

CFB1370

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CFB1370 - PNP SILICON EPITAXIAL POWER TRANSISTOR - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CFB1370 数据手册
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CFB1370 (9AW) TO-220FP Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=50uA, IE=0 60 Collector Base Voltage VEBO IE=50uA,IC=0 5.0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V 60 DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, 15 Transition Frequency f=5MHz Cob VCB=10V, IE=0 80 Collector Output Capacitance f=1MHz E : 100 -200 hFE CLASSIFICATION:D : 60 -120; MARKING : CFB 1370 D CFB 1370 E UNIT V V V A A W W deg C deg C MAX 10 10 1.5 1.5 320 UNIT V V V uA uA V V MHz pF F : 160 -320 CFB 1370 F Continental Device India Limited Data Sheet Page 1 of 2 TO-220FP (Fully Isolated) Plastic Package A D C B All diminsions in mm. M D IM A B C D E F G H J K L M M IN 9.96 2.60 4.50 3.10 7.90 16.87 0.45 2.56 2.34 — — — M AX 10.36 3.00 4.90 3.30 8.20 17.27 0.50 2.96 2.74 3.08 30.05 0.80 F E 1 2 L 3 PIN CON FIG URATION 1. BASE 2. COLLECTO R 3. EMITTER K J J G 1 2 3 H Packing Detail PACKAGE Details TO-220 / FP STANDARD PACK Net Weight/Qty Size INNER CARTON BOX Qty 1.0K 1.0K Size OUTER CARTON BOX Qty Gr Wt 16.0K 10.0K 36 kgs 29 kgs 200 pcs/polybag 396 gm/200 pcs 50 pcs/tube 120 gm/50 pcs 3" x 7.5" x 7.5" 3.5" x 3.7" x 21.5" 17" x 15" x 13.5" 19" x 19" x 19" Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 2 of 2
CFB1370
### 物料型号 - 型号:CFB1370(9AW) - 封装:TO-220FP

### 器件简介 该器件是一款PNP硅外延功率晶体管,专为音频功率放大器设计。

### 引脚分配 - 1. BASE(基极) - 2. COLLECTOR(集电极) - 3. EMITTER(发射极)

### 参数特性 - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):60V - 集电极-发射极电压(VCEO):60V - 发射极-基极电压(VEBO):5.0V - 集电极电流(IC):3.0A(连续),6.0A(峰值) - 功率耗散@Ta=25°C(PC):2.0W - 功率耗散@Tc=25°C:30W - 结温(Tj):150°C - 存储温度范围(Tstg):-55至+150°C

- 电气特性(Ta=25°C,除非另有说明): - 集电极-发射极电压(VCEO)@IC=1mA, IB=0:60V - 集电极-基极电压(VCBO)@IC=50uA, IE=0:60V - 发射极-基极电压(VEBO)@IE=50uA, IC=0:5.0V - 集电极截止电流(ICBO)@VCB=60V, IE=0:10uA - 发射极截止电流(IEBO)@VEB=4V, IC=0:10uA - 集电极-发射极饱和电压(VCE(Sat))@IC=2A, IB=0.2A:1.5V - 基极-发射极饱和电压(VBE(Sat))@IC=2A, IB=0.2A:0.8V - 直流电流增益(hFE)@IC=0.5A, VCE=5V:60 - 截止频率(fT)@hFE:60(1MHz),1370(5MHz)

### 功能详解 该晶体管具有高电压和高功率特性,适用于需要高电流和高电压的音频功率放大器应用。

### 应用信息 适用于音频功率放大器。

### 封装信息 - TO-220FP(全隔离)塑料封装 - 尺寸:详细尺寸见PDF文档中的图表。
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