CJF31C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS NPN CJF31 CJF31A CJF31B CJF31C PNP CJF32 CJF32A CJF32B CJF32C TO-220FP Fully Isolated Plastic Package Designed for use in General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Peak Base Current Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE From Junction to Ambient From Junction to Case SYMBOL VCBO VCEO VEBO IC IB PD PD Tj,Tstg CJF31 CJF32 40 40 CJF31A CJF32A 60 60 CJF31B CJF32B 80 80 5 3 5 1 40 0.32 2 0.016 -65 to +150 CJF31C CJF32C 100 100 UNIT V V V A A A W W/ºC W W/ºC ºC Rth(j-a) Rth(j-c) 62.5 3.125 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VCEO (sus) * IC=30mA, IB=0 Collector Emitter (sus) Voltage CJF31, CJF32 CJF31A, CJF32A CJF31B, CJF32B CJF31C, CJF32C Collector Cut off Current ICEO CJF31/31A, CJF32/32A VCE=30V, IB=0 CJF31B/31C, CJF32B/32C VCE=60V, IB=0 Collector Cut off Current Emitter Cut off Current ICES IEBO VCE=Rated VCES, VEB=0 VBE=5V, IC=0 MIN 40 60 80 100 MAX - UNIT V V V V - 0.3 0.3 mA mA - 200 1.0 µA mA Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR POWER TRANSISTORS NPN CJF31 CJF31A CJF31B CJF31C PNP CJF32 CJF32A CJF32B CJF32C TO-220FP Fully Isolated Plastic Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION hFE * IC=1.0A, VCE=4V DC Current Gain IC=3.0A, VCE=4V VCE(sat) * IC=3A, IB=375mA Collector Emitter Saturation Voltage VBE(on) * IC=3.0A, VCE=4V Base Emitter on Voltage DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product ** MIN 25 10 - MAX 50 1.2 1.8 UNIT V V fT IC=500mA, VCE=10V ftest=1MHz 3.0 - MHz Small Signal Current Gain lhfel * Pulse Test: Pulse Width < 300µs, Duty Cycle