CK100B

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN SILICON PLANAR TRANSISTORS CL 100, A, B CK 100, A, B TO-39 Metal Can Package CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range Of Medium Voltage And Current Amplifier Applications. Complementary CK100, A, B ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °C ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER * IC =10mA, IB =0 Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V MIN 50 60 5 TYP MAX UNIT V V V 50 1 40 300 0.9 0.6 nA µA V V VBE(on)* VCE=1V, IC=150mA, VCE(sat)* IC=150mA,IB=15mA A 40-120 B 100-300 *Pulse Condition : PW