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CMBT2907

CMBT2907

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CMBT2907 - SILICON PLANAR EPITAXIAL TRANSISTORS - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CMBT2907 数据手册
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2907 CMBT2907A Collector–base voltage (open emitter) –VCB0 Collector–emitter voltage (open base) –VCE0 Emitter–base voltage (open collector) –VEB0 Collector current (d.c.) –IC Total power dissipation up to Tamb = 25 °CPtot Junction temperature Tj D.C. current gain hFE –IC = 500mA; –VCE = 10V Turn–off switching time —ICon = 150 mA; –IBon = IBoff = 15 mA toff Transition frequency at f = 100 MHz fT —IC = 50 mA; –VCE = 20 V max. 60 max. 40 max. max. max. max. > < > 30 60 60 5,0 600 250 150 50 100 200 V V V mA mW °C ns MHz Continental Device India Limited Data Sheet Page 1 of 4 CMBT2907 CMBT2907A RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCB0 Collector–emitter voltage (open base) –VCE0 Emitter–base voltage (open collector) –VEB0 Collector current (d.c.) –IC Ptot Power dissipation up to Tamb = 25 °C Storage temperature range Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; –VCB = 50V IE = 0; –VCB = 50V; Tj = 125° C –VEB = 0,5 V; –VCE = 30 V Base current with reverse biased emitter junction –VEB = 3V; –VCE = 30V Saturation voltages –IC = 150 mA; –lB = 15 mA –IC = 500 mA; –lB = 50 mA Collector–base breakdown voltage Open emitter; –IC = 10 µA; IE = 0 Collector–emitter breakdown voltage Open base; –IC = 10 mA; lB: 0 Emitter–base breakdown voltage Open collector; –IE = 10 µA; IC = 0 CMBT2907 CMBT2907A max. 60 max. 40 max. max. max. –55 max. 60 60 5,0 600 250 to +150 150 V V V mA mW °C °C Rth j–a = 500 K/W CMBT2907 CMBT2907A –I CB0 –I CB0 –I CEX < < < 20 20 50 10 10 nA µA nA –IBEX –VCEsat –VBEsat –VCEsat –VBEsat < < < < < 50 0,4 1,3 1,6 2,6 60 40 5,0 60 nA V V V V V V V –V(BR)CBO > –V(BR)CEO > –V(BR)EBO > CMBT2907 CMBT2907A D.C. current gain –IC = 0,1 mA; –VCE = 10 V –IC = 1 mA; –VCE = 10 V –IC = 10 mA; –VCE = 10 V –IC = 150mA; —VCE = 10V –IC = 500mA; –VCE = 10V hFE hFE hFE hFE hFE > > > > 35 50 75 100 to 300 30 75 100 100 50 Continental Device India Limited Data Sheet Page 2 of 4 CMBT2907 CMBT2907A Transition frequency at f = 100 MHz –IC = 50 mA; – VCE = 20 V; Tamb = 25 °C Output capacitance at f = 1 MHz IE = Ie = 0; –VCB = 10V Input capacitance at f = 1 MHz IC = Ic = 0; –VEB = 2 V fT Co Ci > < < 200 8,0 30 MHz pF pF Switching times (between 10% and 90% levels) Turn–on time when switched to –lC = 150mA; –lB = 15 mA; VCC = 30V delay time td rise time tr ton turn on time (td + tr) Turn–off time when switched from –IC = 150 mA; –lB = 15 mA; VCC = 6 V to cut–off with + IBM = 15 mA storage time ts fall time tf toff turn–off time (ts + tf) < < < 10 40 45 ns ns ns < < < 80 30 100 ns ns ns Continental Device India Limited Data Sheet Page 3 of 4 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 4 of 4
CMBT2907
### 物料型号 - CMBT2907 - CMBT2907A

### 器件简介 CMBT2907和CMBT2907A是P-N-P硅晶体管,属于硅平面外延晶体管。

### 引脚分配 - 1 = 基极(BASE) - 2 = 发射极(EMITTER) - 3 = 集电极(COLLECTOR)

### 参数特性 - 绝对最大额定值: - 集电极-基极电压(开路发射极):CMBT2907为60V,CMBT2907A为60V - 集电极-发射极电压(开路基极):CMBT2907为40V,CMBT2907A为60V - 发射极-基极电压(开路集电极):CMBT2907和CMBT2907A均为5.0V - 集电极电流(直流):最大600mA - 总功率耗散(环境温度为25°C):最大250mW - 结温:最大150°C

- 直流电流增益: - 当集电极电流为500mA,集电极-发射极电压为10V时,hFE大于30(CMBT2907)和50(CMBT2907A)

- 关断开关时间: - 当集电极电流为150mA,基极电流为15mA时,关断时间toff小于100ns

- 过渡频率: - 在100MHz频率下,集电极电流为50mA,集电极-发射极电压为20V时,fT大于200MHz

### 功能详解 这些晶体管的主要功能是作为开关或放大器使用,具体取决于电路设计和应用需求。

### 应用信息 这些晶体管适用于一般用途的放大和开关应用,但不建议用于救生或支持生命的设备或系统中。

### 封装信息 晶体管采用SOT-23塑封表面贴装封装。
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