CMBT5087

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5087 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking CMBT5087= 2Q Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) *FR-5 Board = 1.0 × 0.75 × 0.062 in. VCBO VCEO VEBO IC Ptot* Tj hFE max. max. max. max. max. max. min. max. min. 50 50 3 50 225 150 250 800 V V V mA mW °C fT 40 MHz VCBO VCEO max. max. 50 V 50 V Continental Device India Limited Data Sheet Page 1 of 3 CMBT5087 Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient VEBO IC Ptot* Tstg Tj max. 3V max. 50 mA max. 225 mW -55 to +150 ° C max. 150 ° C Rth j–a 417 ° / W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current ICBO IE = 0; VCB = 10 V IE = 0; VCB = 35 V Breakdown voltages IC = 1 mA; IB = 0 IC = 100 µA; IE = 0 Saturation voltage IC = 10 mA; IB = 1.0 mA IC = 10 mA; IB = 1.0 mA D.C. current gain IC = 100 µA; VCE = 5 V IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V Collector capacitance at f = 100 KHz IE = 0; VCB = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V Small signal current IC = 1 mA; VCE = 5 V; f = 1 KHz max. max. 10 nA 50 nA VCEO VCBO min. min. 50 V 50 V VCEsat VBEsat max. max. 300 mV 0.85 V hFE min. max. min. min. 250 800 250 250 C ob max. 4.0 pF fT min. 40 MHz hfe min. max. 250 900 Noise figure IC = 20 µA; VCE = 5 V; RS = 10 kΩ f = 10 Hz to 15.7 KHz ; IC = 100 µA; VCE = 5 V; RS = 3.0 kΩ f = 1.0 KHz *FR-5 Board = 1.0 × 0.75 × 0.62 in. NF NF max. max. 2.0 dB 2.0 dB Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of