CMBTA56

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 100 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 100 mA; –VCE = 1 V Collector–emitter saturation voltage –IC = 100 mA; IB = 10 mA –V CBO –V CEO –V EBO –IC Ptot hFE fT VCEsat CMBT A55 max. 60 max. 60 max. max. A56 80 V 80 V V mA mW 4 500 250 100 50 0.25 min. min. max. MHz V Continental Device India Limited Data Sheet Page 1 of 3 CMBTA55 CMBTA56 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient –V CBO –V CEO –V EBO –IC Ptot Tstg Tj CMBT A55 max. 60 max. 60 max. max. max. –55 max. A56 80 V 80 V 4 V 500 mA 250 mW to +150 °C 150 °C Rth j–a 5 00 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage CMBTA55 –V(BR)CEO min. 60 –IC = 1 mA; IB = 0 Emitter–base breakdown voltage –V(BR)EBO min. –IC = 0; IE = 100 µA Collector cut–off current – I CEO max. –VCE = 60 V; IB = 0 – I CBO max. 0.1 –VCB = 60 V; IE = 0 – I CBO max. –VCB = 80 V; IE = 0 Saturation voltages –V CEsat max. –IC = 100 mA; –IB = 10 mA Base–emitter On voltage –VBE(on) max. –IC = 100 mA; –VCE = 1 V D.C. current gain hFE min. –IC = 10 mA; –VCE = 1 V hFE min. –IC = 100 mA; –VCE = 1 V Transition frequency at f = 100 MHz fT min. –IC = 100 mA; –VCE = 1 V A56 80 V 4 0.1 V µA - µA 0.1 µA V V 0.25 1.2 100 100 50 MHz Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of