Continental Device India Limited
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN450 / CN451 TO-92 Plastic Package
E
BC
General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies
Complementary CP550 and CP551 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Base Current Power Dissipation @ Ta=25ºC Power Dissipation @ Ta=25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB PD *PD PD Tj, Tstg CN450 60 45 5.0 2.0 1.0 200 0.8 1.0 2.0 - 65 to +150 CN451 80 60 UNITS V V V A A mA W W W ºC
*Transistors mounted on printed circuit board. Lead Length 4 mm, mounting pad for collector lead min. 10 mm x 10 mm, copper ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=45V, IE=0 Collector Cut Off Current VCB=60V, IE=0 Emitter Cut Off Current Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Collector Emitter Voltage DC Current Gain DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency Output Capacitance
CN450_451Rev_2 211204E
CN450
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