CP756

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP756 / CP757 TO-92 Plastic Package E BC Medium Power Transistors are Designed for Applications Requiring High Breakdown Voltage and Low Saturation Voltage Complementary CN656 and CN657 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC ) DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Ta=25ºC Power Dissipation at TC=25ºC Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Junction to Ambient Junction to Case SYMBOL VCBO VCEO VEBO *ICM IC PD **PD PD Tj, Tstg CP756 200 200 5 1.0 0.5 0.9 7.2 1.1 2.2 - 65 to +150 CP757 300 300 UNIT V V V A A W mW/ºC W W ºC Rth (j-a) 1 Rth (j-a) 2+ Rth (j-c) 138.8 113.6 56.8 ºC/W ºC/W ºC/W * Consult safe operating area graph for conditions. **Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min 10mm x 10 mm, copper 2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VCBO IC=100µA, IE=0 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain Transition Frequency Output Capacitance VCEO VEBO ICBO IEBO *** VCE (sat) *** VBE (sat) *** VBE (on) *** hFE fT Cobo IC=1mA, IB=0 MIN 200 300 200 300 5.0 MAX UNIT V V V V V nA nA nA V V V CP756 CP757 CP756 CP757 IE=100µA, IC=0 VCB=160V, IE=0 CP756 VCB=200V, IE=0 CP757 VEB=3V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA IC=100mA,VCE=5V IC=100mA,VCE=5V IC=10mA,VCE=5V IC=10mA, VCE=20V, f=20MHz VCB=20V, IE=0, f=1MHz 100 100 100 0.5 1.0 1.0 50 40 30 20 MHz pF ***Pulse conditions. Pulse Width=300µ s. Duty Cycle