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CSB1370F

CSB1370F

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CSB1370F - PNP SILICON EPITAXIAL POWER TRANSISTOR - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CSB1370F 数据手册
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 (9AW) TO-220 MARKING : AS BELOW Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=5MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120; CSB 1370 D E : 100 -200 CSB 1370 E VALUE 60 60 5.0 3.0 6.0 2.0 30 150 -55 to +150 MIN 60 60 5.0 60 TYP 15 80 MAX 10 10 1.5 1.5 320 UNIT V V V A A W W deg C deg C UNIT V V V uA uA V V MHz pF F : 160 -320 CSB 1370 F Continental Device India Limited Data Sheet Page 1 of 3 TO-220 Plastic Package C E D IM A B C D E F G H J K L M N O M IN . M AX . B H F N L O 12 3 D J G M All diminsions in mm. 14.42 16.51 9.63 10.67 3.56 4.83 — 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 — 0.56 12.70 14.73 2.80 4.07 2.03 2.92 — 31.24 D EG 7 A K O 4 PIN CONFIGURATION 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 1 2 3 E n d P in ± 1.5 Label 536.00 13.74 TO-220 Tube Packing D EVICE NAME Sr. QTY. 50 Pcs./Tube 6.87 Tube Thickness AM M O PA CK SIZE AM EN V IC D E Sr. . Q ty E Label 92.0 53 75. 0 8 .0 20 Tubes/A m m o Pack 1000 pcs./A m m o Pack 0 Page 2 of 3 Continental Device India Limited Data Sheet 32.85 AM EN VIC D E Sr. . Q ty E Packing Detail PACKAGE TO-220 / FP STANDARD PACK Details Net Weight/Qty 200 pcs/polybag 396 gm/200 pcs 50 pcs/tube 120 gm/50 pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 3.5" x 3.7" x 21.5" 1.0K 1.0K Size OUTER CARTON BOX Qty Gr Wt 16.0K 10.0K 36 kgs 29 kgs 17" x 15" x 13.5" 19" x 19" x 19" Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3
CSB1370F
1. 物料型号: - 型号为CSB1370(9AW),封装为TO-220。

2. 器件简介: - 该器件为PNP硅外延功率晶体管,设计用于音频功率放大器。

3. 引脚分配: - 引脚配置如下:1. 基极(BASE),2. 集电极(COLLECTOR),3. 发射极(EMITTER),4. 集电极(COLLECTOR)。

4. 参数特性: - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):60V - 集电极-发射极电压(VCEO):未提供具体数值 - 发射极-基极电压(VEBO):5.0V - 集电极电流:3.0A(峰值6.0A) - 功耗(Ta=25°C):2.0W(Tc=25°C时为30W) - 结温(Tj):150°C - 存储温度范围(Tstg):-55至+150°C - 电气特性(Ta=25°C,除非另有说明): - 集电极-发射极电压(VCEO):IC=1mA, IB=0时为60V - 集电极-基极电压(VCBO):IC=50uA, IE=0时为60V - 发射极-基极电压(VEBO):IE=50uA, IC=0时为5.0V - 集电极截止电流(ICBO):VCB=60V, IE=0时为10uA - 发射极截止电流(IEBO):VEB=4V, IC=0时为10uA - 集电极-发射极饱和电压(VCE(Sat)):IC=2A, IB=0.2A时为1.5V - 基极-发射极饱和电压(VBE(Sat)):IC=2A, IB=0.2A时为1.5V - 直流电流增益(hFE):IC=0.5A, VCE=5V时为60至320,截止频率(fT):f=5MHz时为15MHz,f=1MHz时为80

5. 功能详解: - 该晶体管具有高功率处理能力和高增益特性,适用于音频功率放大器。

6. 应用信息: - 适用于音频功率放大器。

7. 封装信息: - 封装类型为TO-220塑料封装。 - 尺寸和引脚配置已在文档中给出,具体尺寸如下: - A: 14.42至16.51毫米 - B: 9.63至10.67毫米 - C: 3.56至4.83毫米 - D至N的具体尺寸也已列出。
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