CSB857B

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB857, CSB858 CSD1133, CSD1134 CSB857, 858 PNP PLASTIC POWER TRANSISTORS CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. 12 N L 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O O ABSOLUTE MAXIMUM RATINGS 857 1133 max. 70 max. 50 max. max. max. max. min. max. 857 1133 max. 70 max. 50 max. 858 1134 70 V 60 V 4.0 A 40 W 150 °C 1.0 60 320 858 1134 70 V 60 V 5.0 V V Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 2 A; IB = 200 mA D.C. current gain IC = 1 A; VCE = 4 V All diminsions in mm. Data Sheet K VCBO VCEO IC Ptot Tj VCEsat hFE RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO Continental Device India Limited Page 1 of 3 CSB857, CSB858 CSD1133, CSD1134 Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 50V Breakdown voltages IC = 50 mA; IB = 0 IC = 10 µA; IE = 0 IE = 10 µA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base emitter on voltage IC = 1 A; VCE = 4 V D.C. current gain IC = 0.1 A; VCE = 4 V IC = 1.0 A; VCE = 4 V** Transition frequency IC = 0.5 A; VCE = 4 V IC IC Ptot Tj Tstg max. max. max. max. 4.0 8.0 40 150 –65 to +150 A A W ºC ºC 857 1133 ICBO VCEO VCBO VEBO VCEsat* VBE(on)* hFE* hFE* max. min. min. min. max. max. min. min. max. typ. typ. 50 70 5.0 1.0 1.0 35 60 320 15 7.0 1.0 858 1134 µA 60 V V V V V PNP NPN fT MHz MHz ** hFE classification: B: 60-120 C: 100-200 D: 160-320 * Pulse test Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3