0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CSD1489

CSD1489

  • 厂商:

    CDIL

  • 封装:

  • 描述:

    CSD1489 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR - Continental Device India Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
CSD1489 数据手册
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1489 TO-92 BCE Low Frequency Power Amplifier. Complementary CSB1058 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN BVCBO IC=10uA, IE=0 20 Collector -Base Voltage BVCEO IC=1mA, IB=0 16 Collector Emitter Voltage BVEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=16V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current hFE * VCE=2V, IC=0.1A 100 DC Current Gain VCE=2V, IC=2A 75 VCE(Sat) IC=1A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=10mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE* Classification : A 100-240; B 200-400; C 350-500 UNIT V V V A W deg C TYP 80 20 MAX 2.0 0.2 500 0.3 - UNIT V V V uA uA V MHz pF Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack S ty le M EC H AN IC AL D ATA Ad hesive Ta p e o n To p S ide P h A A1 (p) FEE D C arrier Strip A h T 321 H1 H0 L LA BE L FL AT SIDE 8.2" W2 Wo W1 W t1 K t F1 F P2 Po F2 Do 1 3" 1 .7 7" D 3 E 2 1 ITEM Flat S id e o f Tra nsis tor and Ad hesive Tape V isible 20 00 pcs./A m m o P ack All dim ensions in m m unless specified otherwise SYM BO L A1 A T P Po SPEC IFICAT ION REM ARKS M IN. NO M . M AX. TO L . 4.8 4.0 5.2 4.8 4.2 3.9 12.7 ±1 12.7 ± 0.3 CUM U LATIVE PIT CH ERRO R 1.0 m m /20 PITCH 6.35 ± 0.4 TO BE M EASURED AT BOT TOM O F C LINCH +0.6 5.08 -0.2 0 1 AT TO P OF BODY 18 ± 0.5 6 ± 0.2 9 +0.7 -0.5 0.5 ± 0.2 16 ± 0.5 23.25 11.0 4 ± 0.2 1.2 t1 0.3 - 0 .6 2.54 +0.4 -0.1 3 6N D G AA SEC AA BOD Y W IDT H BOD Y H EIG HT BOD Y T HICKNESS PITCH OF COM PO NENT FEED HO LE PITCH F F DIM A B C D E F G H K MIN. 4.32 4.45 3.18 0.41 0.35 MAX. 5.33 5.20 4.19 0.55 0.50 FEED HO LE CENTR E TO CO M PONENT CENTR E DISTAN CE BET WEEN O UTER LEADS CO M PONENT ALIGN M EN T TAPE W IDTH HO LD-D OW N TAPE W IDT H HO LE PO SITIO N HO LD-D OW N TAPE PO SIT ION LEAD W IRE CLINCH H EIG HT CO M PONENT HEIGH T LENG TH O F SNIPPED LEAD S FEED HO LE DIAM ETER TO TAL TAPE TH ICKNESS LEAD - TO - LEAD DISTAN CEF1, CLINC H HEIGH T PULL - O UT FO RCE P2 F h W Wo W1 W2 Ho H1 L Do t F2 H2 ( P) H 321 C All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 5 DEG 1.14 1.40 1.14 1.53 12.70 — N OT ES 1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T TO B E G R E AT E R T H A N 0 .2 m m . 2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0 P IT C H E S . 3 . H O L D D O W N TA P E N O T T O E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O E X P O S U R E O F A D H E S IV E . 4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D . 5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T. 6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S . Packing Detail PACKAGE Details TO-92 Bulk TO-92 T&A 1K/polybag 2K/ammo box STANDARD PACK Net Weight/Qty 200 gm/1K pcs 645 gm/2K pcs INNER CARTON BOX Size 3" x 7.5" x 7.5" 12.5" x 8" x 1.8" Qty 5.0K 2.0K OUTER CARTON BOX Size 17" x 15" x 13.5" 17" x 15" x 13.5" Qty 80.0K 32.0K Gr Wt 23 kgs 12.5 kgs Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3
CSD1489
1. 物料型号: - 型号:CSD1489 - 封装:TO-92 BCE

2. 器件简介: - 该器件是一个NPN型外延平面硅晶体管,适用于低频功率放大器,与CSB1058互补。

3. 引脚分配: - 1. BASE(基极) - 2. COLLECTOR(集电极) - 3. EMITTER(发射极)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压:BVCBO 20V - 集电极-发射极电压:BVCEO 16V - 发射极-基极电压:BVEBO 6.0V - 集电极电流:BVEBO IC 2.0A - 集电极功率耗散:PC 0.75W - 工作和存储结温:Tj, Tstg -55至+150°C

- 电气特性(Ta=25°C): - 集电极-基极电压:BVCBO 20V - 集电极-发射极电压:BVCEO 16V - 发射极-基极电压:BVEBO 6.0V - 集电极截止电流:ICBO 2.0uA - 发射极截止电流:IEBO 0.2uA - DC电流增益:hFE 75至500 - 集电极-发射极饱和电压:VCE(Sat) 0.3V - 过渡频率:ft 80MHz - 集电极输出电容:Cob 20pF

5. 功能详解: - 该晶体管主要用于低频功率放大,具有较高的电流增益和较低的饱和电压,适用于需要功率放大的应用场景。

6. 应用信息: - 适用于低频功率放大器,与CSB1058互补使用。

7. 封装信息: - 封装类型:TO-92 Plastic Package - 尺寸和引脚配置详细信息已在文档中提供,包括各尺寸的最小值、最大值和公差。
CSD1489 价格&库存

很抱歉,暂时无法提供与“CSD1489”相匹配的价格&库存,您可以联系我们找货

免费人工找货