CSD667

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 NPN SILICON EPITAXIAL TRANSISTORS CSD667 CSD667A TO-237 BCE Low Frequency Power Amplifier Complementary CSB647/A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL Collector -Base Voltage VCBO VCEO Collector -Emitter Voltage Emitter Base Voltage VEBO Collector Current IC IC Peak PC Collector Power Dissipation Operating And Storage Junction Tj, Tstg Temperature Range CSD667 120 80 5.0 1.0 2.0 0.9 -55 to +150 CSD667A 120 100 5.0 1.0 2.0 0.9 -55 to +150 UNIT V V V A A W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION CSD667 CSD667A VCBO IC=10uA, IE=0 >120 >120 Collector -Base Voltage Collector -Emitter Voltage VCEO IC=1mA, IB=0 >80 >100 Emitter Base Voltage VEBO IE=10uA, IC=0 >5.0 >5.0 ICBO VCB=100V, IE=0 30 VCE(Sat) IC=500mA,IB=50mA**