2SC3356-T1B-R25-A

A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 JEITA Part No. Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Order Number Package NE85633 2SC3356 NE85633-A 2SC3356-A 3-pin Minimold NE85633-T1B 2SC3356-T1B (Pb-Free) NE85633-T1B-A 2SC3356-T1B-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape The unit sample quantity is 50 pcs. O Remark To order evaluation samples, please contact your nearby sales office. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Symbol Ratings Unit SE - Parameter Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA 200 mW Tj 150 °C Tstg −65 to +150 °C Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note Free air Ptot Note PH A UT • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 1 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 – – 1.0 μA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 – – 1.0 μA VCE = 10 V, IC = 20 mA 50 120 250 – VCE = 10 V, IC = 20 mA – 7 – GHz DC Current Gain hFE Note 1 Gain Bandwidth Product fT Insertion Power Gain ⏐S21e⏐ VCE = 10 V, IC = 20 mA, f = 1 GHz – 11.5 – dB NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 2.0 dB VCB = 10 V, IE = 0, f = 1 MHz − 0.55 1.0 pF 2 Noise Figure Reverse Transfer Capacitance UT RF Characteristics Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% hFE CLASSIFICATION Q/YQ R/YR Marking R23 R24 hFE Value 50 to 100 80 to 160 S/YS R25 125 to 250 SE - Rank PH A O 2. Collector to base capacitance when the emitter grounded R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 2 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free air 200 150 100 50 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) 100 50 20 10 0.5 1 5 10 0.3 0.2 10 0.5 1 2 5 10 20 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V 5 2 1 0.5 0.2 0.1 0.1 50 0.5 1 5 10 50 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT PH A 15 MAG 20 Insertion Power Gain |S21e|2 (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 25 0.5 O VCE = 10 V 1 SE - DC Current Gain hFE 200 f = 1 MHz Collector to Base Voltage VCB (V) Gain Bandwidth Product fT (GHz) DC CURRENT GAIN vs. COLLECTOR CURRENT 2 UT Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE |S21e|2 15 10 5 0 0.05 VCE = 10 V IC = 20 mA 0.1 0.2 0.5 1 2 Frequency f (GHz) VCE = 10 V f = 1 GHz 10 5 0 0.5 1 5 10 50 70 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 3 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 NOISE FIGURE vs. COLLECTOR CURRENT 5 4 3 2 1 0 0.5 1 5 10 50 70 f = 1 GHz IC = 20 mA 4 3 2 1 0 |S21e|2 15 12 9 6 NF Insertion Power Gain |S21e|2 (dB) Noise Figure NF (dB) 6 Noise Figure NF (dB) 5 VCE = 10 V f = 1 GHz UT 7 NOISE FIGURE, INSERTION POWER GAIN vs. COLLECTOR TO EMITTER VOLTAGE 3 2 4 6 8 0 10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) PH A SE - O Remark The graphs indicate nominal characteristics. R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 4 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 SMITH CHART S11e, S22e-FREQUENCY 1.0 70 0.1 6 0.3 4 0.1 0.3 7 3 1.4 60 1.6 0.7 1.8 5 0. 0 1. 0 ) 1.0 NE G 0.4 2.0 1.8 0.35 0.15 −70 1.2 4 0.3 6 0.1 1.4 1.6 0.2 0.36 0.14 −80 0.37 0.13 0. 4 0. 3 0 −1 7 30 0.38 0.39 0.12 0.11 −100 −90 −11 0 0.40 0.10 0.4 1 0.0 0.4 9 0 2 −1 .08 20 SE - 3 0.3 7 0 −6 1.0 0.1 0.8 32 18 0. 0. 0 0.9 −5 0.7 10 5.0 3.0 O ( 0.6 0.6 0. 3 −4 0.1 1 0 9 0. 5 0 3. E NC TA X AC −J––O– RE –Z 0.8 0.2 GHz IC = 5 mA 0.3 0.2 0 0 E IV AT 4.0 1.8 2.0 1.6 1.4 0.9 1.0 0.7 0.8 1. 5.0 4.0 0.1 IC = 20 mA 4 0.27 0.2 0 .2 8 3 0 0 .2 .29 2 −20 0.2 1 −3 0 IC = 5 mA 0.2 GHz 8 0. 0. −10 S22e 0.6 10 0.6 1.2 2.0 GHz IC = 20 mA 0.4 50 0.5 0.4 0.2 0.3 0.2 0.6 ) 50 0.26 0.24 REACTANCE COMPONENT R –––– 0.2 ZO ( 20 0 0.4 UT C O 0.8 10 0.25 0.25 0.3 6.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 S11e 0.2 4.0 0 1. 20 4 0. 0.8 2.0 GHz 1 0.2 9 0.2 0 3. 0.6 30 ( –Z–+–J–XTANCE CO ) MPO N 0.4 20 T EN 0.2 S21e-FREQUENCY S12e-FREQUENCY CONDITION : VCE = 10 V, IC = 20 mA CONDITION : VCE = 10 V, IC = 20 mA 90˚ 120˚ 0. 18 32 0. 50 2 .0 0.6 0.2 0.1 0.3 0.15 0.35 0 0.2 0 0.3 WAVELE N 0.14 0.36 80 40 GTHS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF FCIENT 0.4 0.0TOR 3 HS TO LE OF REF 6 I 7 .0 N DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .04AVE −1 6 0.0 0 5 W 15 0 0.4 5 0.4 5 0 15 0 − . 5 0 0. 4 0 4 POS 0.1 14 0.4 6 0. 06 ENT ITIV 40 ON 0 ER 4 MP 0. −1 E O A C 0.13 0.37 90 19 0. 31 0. 2 0.4 20 1 07 0. 3 4 0. 0 13 0.12 0.38 0.11 0.39 100 0.9 0 0.10 0.40 110 0.8 .08 9 0.0 1 0.4 1.2 CONDITION : VCE = 10 V, 200 MHz Step 90˚ 2.0 GHz 60˚ 120˚ 60˚ 0.2 GHz 150˚ 30˚ PH A S21e 180˚ 2.0 GHz 5 10 15 –150˚ –60˚ –120˚ –90˚ R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 S12e 150˚ 30˚ 0.2 GHz 20 0˚ 180˚ –30˚ 0.05 0.1 0.15 –150˚ 0.2 0.25 0˚ –30˚ –60˚ –120˚ –90˚ Page 5 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] PH A SE - O UT URL http://www2.renesas.com/microwave/en/download.html R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 6 of 7 A Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 PACKAGE DIMENSIONS 3-PIN MINIMOLD (UNIT: mm) 2.8±0.2 UT 3 0.4+0.1 –0.05 0.4+0.1 –0.05 0.95 0.95 1 Marking 0 to 0.1 O 0.16+0.1 –0.05 0.3 2.9±0.2 2 1.1 to 1.4 0.65+0.1 –0.15 1.5 SE - PIN CONNECTIONS PH A 1. Emitter 2. Base 3. Collector R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 Page 7 of 7 NE85633 / 2SC3356 Data Sheet Revision History Rev. Description Summary Page Jun 2004 Jun 28, 2011 − p.1 p.2 Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION PH A SE - O UT − 3.00 Date All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. 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