2SC4703-AZ

NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (SOT-89). FEATURES • Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75 • Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate) 2 • Small package : 3-pin power mini mold package ORDERING INFORMATION Part Number Quantity Supplying Form NE46234-AZ 2SC4703 25 pcs (Non reel) • 12 mm wide embossed taping NE46234-T1-AZ 2SC4703-T1 1 kpcs/reel • Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 2.5 V IC 150 mA 1.8 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate 2 Document No. PU10339EJ01V1DS (1st edition) Date Published May 2003 CP(K) The mark  shows major revised points. NE46234 / 2SC4703 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 mA – – 1.5 A Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA – – 1.5 A Note 1 VCE = 5 V, IC = 50 mA 50 – 250 – Gain Bandwidth Product fT VCE = 5 V, IC = 50 mA – 6.0 – GHz Insertion Power Gain (1) S21e VCE = 5 V, IC = 50 mA, f = 1 GHz 6.5 8.3 – dB Insertion Power Gain (2) S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz – 8.5 – dB NF VCE = 5 V, IC = 50 mA, f = 1 GHz – 2.3 3.5 dB VCB = 5 V, IE = 0 mA, f = 1 MHz – 1.5 2.5 pF IC = 50 mA, VO = 105 dBV/75 , f = 190  90 MHz VCE = 5 V – 55 – dBc 63 – IC = 50 mA, VO = 105 dBV/75 , f = 2  190  200 MHz VCE = 5 V – 76 – VCE = 10 V – 81 – hFE DC Current Gain RF Characteristics 2 Noise Figure Cob Collector Capacitance 2nd Order Intermoduration Distortion 3rd Order Intermoduration Distortion Note 2 IM2 IM3 VCE = 10 V Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank SH SF SE Marking SH SF SE hFE Value 50 to 100 80 to 160 125 to 250 Data Sheet PU10339EJ01V1DS dBc NE46234 / 2SC4703 TYPICAL CHARACTERISTICS (TA = +25C) Data Sheet PU10339EJ01V1DS 3 NE46234 / 2SC4703 Remark The graphs indicate nominal characteristics. S-PARAMETERS 4 Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (UNIT: mm) Data Sheet PU10339EJ01V1DS 5 NE46234 / 2SC4703 6 Data Sheet PU10339EJ01V1DS NE46234 / 2SC4703