2SC5753-T2-A

NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. +0.01 0.59±0.05 +0.30-0.05 (leads 1, 3 and ,4) The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package ELECTRICAL CHARACTERISTICS (TA = 25°C) +0.1 DESCRIPTION 2.05±0.1 1.25±0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER DC SYMBOLS PARAMETERS AND CONDITIONS UNITS Collector Cutoff Current at VCB = 5V, IE = 0 nA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA hFE DC Current1 Gain at VCE = 3 V, IC = 30 mA P1dB Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm GL RF NE678M04 M04 2SC5753 ICBO Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz MAG |S21E|2 ηc Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz Cre 100 120 dB 13.0 dBm 13.5 % MAX 100 18.0 dB Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz TYP dBm Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm fT MIN 75 Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz NF 1.30 HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz +0.11-0.05 • 3 HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz 0.650.65 • 4 HIGH GAIN BANDWIDTH: fT = 12 GHz +0.30 • 8.0 150 10.5 55 dB 1.7 GHz 12.0 pF 0.42 2.5 0.7 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan. 4. MAG = |S21| |S12| (K ± K 2- 1 ). California Eastern Laboratories NE678M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS PART NUMBER QUANTITY VCBO Collector to Base Voltage V 9.0 NE678M04-T2-A 3k pcs./reel VCEO Collector to Emitter Voltage V 6.0 VEBO Emitter to Base Voltage V 2.0 IC Collector Current mA 100 PT Total Power Dissipation2 mW 205 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. THERMAL RESISTANCE SYMBOLS PARAMETERS UNITS RATINGS Rth j-a Thermal Resistance from Junction to Ambient °C/W 600 Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Pout (mW) 300 Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) 250 205 200 150 100 50 0 25 50 75 100 125 150 f= 1 MHz 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 6 5 Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 VCE = 3 V 90 700 µA 80 600 µA 70 DC Current Gain (hFE) Collector Current IC (mA) 1.0 500 µA 60 400 µA 50 300 µA 40 200 µA 30 100 20 10 0 IB =100 µA 2 4 6 Collector to Emitter Voltage VCE (V) 8 10 0.1 1 10 Collector Current IC (mA) 100 NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 5 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) 10 100 VCE = 3 V IC = 30 mA 30 MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 1 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 0 1 35 25 VCE = 3 V f = 2 GHz 20 MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 25 VCE = 3 V f = 2.5 GHz 16 VCE = 3 V f = 2 GHz Ga 20 15 MAG 10 |S21e|2 5 0 MSG 15 6 12 4 8 4 2 NF 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 0 100 Associated Gain Ga (dB) VCE = 3 V f = 2 GHz Noise Figure NF (dB) Gain Bandwidth Product fT (GHz) 15 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V 250 Output Power Pout (dbm) Power Gain Gp (dB) 200 20 GP 15 10 150 100 IC 5 50 ηC 0 -10 -5 0 5 10 Collector Current IC (mA), Collector Efficiency ηc (%) Pout f = 0.9 GHz Icq = 10 mA (RF OFF) 0 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 20 250 Pout 200 15 150 GP 10 100 ηC 5 50 25 Output Power Pout (dbm) Power Gain Gp (dB) VCE = 2.8 V f = 1.8 GHz Icq = 10 mA (RF OFF) Collector Current IC (mA), Collector Efficiency ηc (%) Output Power Pout (dbm) Power Gain Gp (dB) 25 20 250 VCE = 3.2 V f = 1.8 GHz Icq = 10 mA (RF OFF) -5 0 150 GP 10 100 ηC 5 50 IC 5 10 0 15 0 -10 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 20 250 Pout 200 15 150 GP 10 100 ηC 5 50 IC 0 -10 -5 0 5 10 Input Power Pin (dBm) 0 15 Collector Current IC (mA), Collector Efficiency ηc (%) Output Power Pout (dbm) Power Gain Gp (dB) 25 -5 0 5 10 Input Power Pin (dBm) Input Power Pin (dBm) VCE = 3.2 V f = 2.4 GHz Icq = 10 mA (RF OFF) 200 15 IC 0 -10 Pout 0 15 Collector Current IC (mA), Collector Efficiency ηc (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 j10 0 +45º +135º S22 25 10 5 10 15 20 50 100 +0º +180º S11 -j10 -45º -135º -j100 -j25 -90º -j50 NE678M04 VC = 2 V, IC = 10 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.72 0.68 0.65 0.63 0.62 0.60 0.60 0.60 0.60 0.60 0.59 0.59 0.59 0.59 0.59 0.60 0.61 0.63 0.65 0.67 0.69 0.71 S21 ANG -45.97 -81.43 -106.66 -124.06 -136.69 -148.20 -155.78 -161.77 -167.38 -171.69 170.30 161.69 158.90 156.19 142.62 128.82 114.69 101.16 89.04 78.45 68.99 59.90 MAG 23.42 19.17 15.41 12.56 10.53 8.85 7.72 6.86 6.15 5.59 3.81 3.21 3.05 2.90 2.35 1.97 1.69 1.47 1.29 1.15 1.02 0.92 S12 ANG 152.40 132.28 118.19 108.21 100.63 94.98 89.80 85.45 81.38 77.66 61.44 52.84 50.05 47.32 33.99 21.32 9.12 -2.44 -13.44 -23.86 -33.79 -43.00 MAG 0.02 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.08 0.09 0.09 0.09 0.11 0.13 0.14 0.16 0.18 0.19 0.21 0.23 S22 ANG MAG 65.62 52.02 42.17 37.11 33.66 32.53 31.81 31.70 31.29 31.31 33.17 33.52 33.69 33.45 32.55 29.86 26.40 21.89 16.66 10.92 4.77 -1.43 0.90 0.74 0.61 0.52 0.46 0.38 0.36 0.34 0.33 0.32 0.31 0.32 0.32 0.33 0.36 0.39 0.43 0.47 0.50 0.53 0.57 0.60 K ANG -29.51 -51.31 -66.86 -77.84 -86.27 -92.24 -98.70 -102.52 -106.64 -110.16 -123.84 -130.08 -131.91 -133.96 -142.01 -149.47 -156.17 -163.41 -171.39 179.62 170.14 160.66 MAG1 (dB) 0.10 0.18 0.26 0.34 0.42 0.56 0.62 0.68 0.74 0.79 1.00 1.07 1.10 1.11 1.14 1.15 1.12 1.07 1.03 0.98 0.94 0.92 29.97 26.71 24.93 23.61 22.62 21.75 21.00 20.32 19.72 19.17 16.81 13.98 13.41 12.93 11.02 9.63 8.62 7.95 7.59 7.69 6.86 6.09 Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 +90º j100 j25 j10 0 +45º +135º S11 25 10 10 20 30 50 100 S22 +0º +180º -j10 -45º -135º -j100 -j25 -90º -j50 NE678M04 VC = 3 V, IC = 30 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.52 0.55 0.56 0.56 0.56 0.56 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.58 0.60 0.62 0.64 0.65 0.67 S21 ANG -74.30 -114.70 -136.33 -149.34 -158.35 -167.02 -172.39 -176.68 179.14 176.07 161.30 153.82 151.23 148.83 136.19 123.25 109.78 96.93 85.43 75.45 66.54 57.90 MAG 39.85 28.29 20.98 16.42 13.45 11.22 9.70 8.57 7.66 6.93 4.70 3.96 3.76 3.58 2.90 2.44 2.10 1.84 1.63 1.46 1.32 1.19 S12 ANG 141.89 120.64 108.33 100.26 94.25 90.08 85.86 82.27 78.87 75.71 61.65 53.96 51.43 48.96 36.74 24.91 13.41 2.30 -8.43 -18.79 -28.80 -38.45 MAG 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.08 0.09 0.09 0.10 0.12 0.14 0.16 0.18 0.19 0.21 0.22 0.24 S22 ANG MAG 63.14 50.10 45.90 45.26 45.86 47.13 48.18 49.01 49.82 50.22 49.69 48.26 47.59 46.86 42.26 36.84 30.78 24.27 17.67 11.05 4.47 -2.21 0.79 0.58 0.46 0.40 0.36 0.30 0.28 0.27 0.27 0.26 0.27 0.27 0.28 0.28 0.31 0.34 0.37 0.40 0.43 0.47 0.50 0.53 K ANG -43.24 -69.59 -86.51 -97.94 -106.44 -115.48 -121.83 -125.22 -128.89 -131.89 -142.80 -147.21 -148.33 -149.67 -154.80 -159.87 -164.45 -170.06 -176.72 175.39 166.91 158.44 MAG1 (dB) 0.22 0.37 0.49 0.61 0.69 0.83 0.88 0.92 0.96 0.98 1.07 1.09 1.09 1.09 1.09 1.08 1.06 1.04 1.01 0.98 0.95 0.93 33.48 30.30 28.27 26.78 25.46 24.40 23.43 22.51 21.72 20.95 16.35 14.70 14.25 13.81 12.03 10.71 9.71 9.03 8.78 8.46 7.72 7.05 Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 j10 0 +45º +135º S11 10 20 30 40 25 50 100 10 +0º +180º S22 -j10 -45º -135º -j100 -j25 -j50 -90º NE678M04 VC = 5 V, IC = 70 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.46 0.51 0.53 0.54 0.55 0.55 0.56 0.56 0.56 0.56 0.56 0.55 0.55 0.55 0.55 0.56 0.57 0.58 0.60 0.62 0.64 0.65 S21 ANG -92.27 -129.65 -147.72 -158.40 -165.77 -173.25 -177.75 178.53 174.86 172.16 158.57 151.40 148.96 146.64 134.28 121.53 108.26 95.62 84.34 74.53 65.76 57.22 MAG 47.62 31.64 22.84 17.67 14.38 11.98 10.33 9.12 8.14 7.36 4.98 4.19 3.98 3.79 3.07 2.58 2.22 1.95 1.73 1.55 1.40 1.27 S12 ANG 136.35 115.69 104.50 97.25 91.83 88.17 84.28 80.93 77.76 74.77 61.30 53.86 51.41 49.00 37.07 25.46 14.13 3.18 -7.49 -17.79 -27.80 -37.47 MAG 0.01 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.08 0.09 0.09 0.10 0.12 0.14 0.16 0.18 0.20 0.21 0.22 0.24 S22 ANG MAG 61.08 51.85 50.27 51.38 53.36 54.92 55.88 56.52 56.38 57.10 55.00 52.53 51.60 50.56 44.90 38.56 32.10 25.40 18.42 11.57 4.84 -1.99 0.69 0.49 0.39 0.34 0.31 0.26 0.25 0.25 0.24 0.24 0.25 0.26 0.26 0.27 0.29 0.32 0.36 0.39 0.42 0.45 0.48 0.51 K ANG -50.06 -77.41 -94.24 -105.50 -113.55 -123.64 -129.49 -132.28 -135.41 -138.20 -147.24 -150.84 -151.75 -152.82 -157.03 -161.31 -165.52 -170.85 -177.21 175.01 166.70 158.43 MAG1 (dB) 0.35 0.51 0.65 0.76 0.84 0.94 0.98 1.00 1.02 1.04 1.08 1.09 1.09 1.09 1.09 1.07 1.06 1.03 1.01 0.98 0.96 0.94 35.14 31.73 29.60 27.89 26.43 25.20 24.08 22.69 21.26 20.18 16.43 14.89 14.44 14.02 12.29 10.96 9.97 9.29 9.02 8.67 7.95 7.29 Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 02/07/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. 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