CE3520K3-C1

DATASHEET RF Low Noise FET CE3520K3 20 / 24 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION   PACKAGE Super Low Noise and High Gain Hollow (Air cavity) Plastic package  Micro-X plastic package FEATURES  Super Low noise figure and high associated gain: NF = 0.55 dB TYP., Ga = 13.8 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.80 dB TYP., Ga = 13.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 24 GHz APPLICATIONS  K-Band LNB (Low Noise Block)  Doppler Sensor  Low Noise Amplifier for microwave communication systems ORDERING INFORMATION Part Number CE3520K3 Order Number CE3520K3-C1 This document is subject to change without notice. Date Published: July 2019 CDS-0019-04 (Issue C) Package Micro-X plastic package 1 Marking C6 Description • Embossed tape 8 mm wide • Pin 4 (Gate) faces the perforation side of the tape • MOQ 10k pcs/reel CE3520K3 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25˚C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS -3.0 V Drain Current ID IDSS mA Gate Current IG 80 µA Total Power Dissipation Ptot 125 mW Channel Temperature Tch +150 °C Storage Temperature Tstg -55 to +125 Operation Temperature °C °C -55 to +125 Note Top Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE (TA = +25˚C, unless otherwise specified) Parameter Drain to Source Voltage Drain Current This document is subject to change without notice. Symbol MIN. TYP. MAX. Unit VDS +1 +2 +3 V ID 5 10 15 mA 2 CE3520K3 ELECTRICAL CHARACTERISTICS (TA = +25˚C, unless otherwise specified) Parameter Symbol Condition MIN. TYP. MAX. Unit - 0.4 10 µA Gate to Source Leak Current IGSO VGS = -3.0V Saturated Drain Current IDSS VDS = 2V, VGS = 0V 23.0 40.0 57.0 mA VGS(off) VDS = 2V, ID = 100µA -1.10 -0.75 -0.39 V Transconductance Gm VDS = 2V, ID = 10mA 47.0 62.0 - mS Noise Figure1 NF - 0.55 0.80 dB Associated Gain1 Ga VDS = 2V, ID = 10mA, f = 20GHz 11.5 13.8 - dB Noise Figure2 NF - 0.80 1.30 dB Associated Gain2 Ga 11.5 13.9 - dB Gate to Source Cut-off Voltage VDS = 2V, ID = 10mA, f = 24GHz 1. 100% tested on production devices 2. Not tested on production devices This document is subject to change without notice. 3 CE3520K3 TYPICAL CHARACTERISTICS: (TA=+25℃, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE This document is subject to change without notice. MINIMUM NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT 4 CE3520K3 This document is subject to change without notice. 5 CE3520K3 S-PARAMETERS S-Parameters are available on the CEL web site. RECOMMENDED SOLDERING CONDITIONS Recommended Soldering Conditions are provided on the CEL web site. PACKAGE DIMENSIONS Micro-X plastic package This document is subject to change without notice. 6 CE3520K3 REVISION HISTORY Version CDS-0019-03 (Issue A) February 12, 2016 CDS-0019-03 (Issue B) April 27, 2016 CDS-0019-04 (Issue A) July 29, 2016 Initial datasheet Change to current version Page(s) N/A Updated Marking Information 1, 2, 3 Updated Specs in “Absolute Maximum Ratings” Table Added “Typical Characteristics” section (graphs) Added “S-Parameters” and “Recommended Soldering Conditions” sections 2, 4, 6 CDS-0019-04 (Issue B) Dec 04, 2018 Updated Applications Updated marking by adding a dot to the package Gate 1, 2, 6 CDS-0019-04 (Issue C) July 02, 2019 Added 24GHz Electrical and Typical Characteristics 1,3, 5 This document is subject to change without notice. 7 CE3520K3 [CAUTION] • All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. • You should not alter, modify, copy, or otherwise misappropriate any CEL product, whether in whole or in part. • CEL does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of CEL products or technical information described in this document. No license, expressed, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of CEL or others. • Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. CEL assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. • CEL has used reasonable care in preparing the information included in this document, but CEL does not warrant that such information is error free. CEL assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. • Although CEL endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a CEL product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. • Please use CEL products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. CEL assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. • This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of CEL. • Please contact CEL if you have any questions regarding the information contained in this document or CEL products, or if you have any other inquiries. This document is subject to change without notice. 8 CE3520K3 [CAUTION] This product uses gallium arsenide (GaAs) of the toxic substance appointed in laws and ordinances. GaAs vapor and powder are hazardous to human health if inhaled or ingested. ・Do not dispose in fire or break up this product. ・Do not chemically make gas or powder with this product. ・When discarding this product, please obey the laws of your country. ・Do not lick the product or in any way allow it to enter the mouth. [CAUTION] Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times. CEL Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054 • Tel: (408) 919-2500 • www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus For inquiries email us at rfw@cel.com This document is subject to change without notice. 9