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GET-BE-OOO6 /4 1
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Qualification Test Report (useon HSO MIC U Si M Process)
Preparedn :June 6,2003 o 2
by:
i£.( fJi$;
YASUSHISATOH Assistant Manager
Approved by :
J. f~~.().Io-'J"~TOSHIAKI YOKOKA W A
Manager Reliability and QC Department NEC Compound emiconductorevices,LTD. S D
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GET-BE-0006 2/4 1. Introduction This report presents UHSO (fT =25GHz) Process Qualification Test result. The Process Qualification Test was performed by UPC8182B(B). 2. Qualification Test items and failure criteria 2. 1 2.2 2. 3 3. Result 3.1 Thermal and Mechanical Environmental Test As shown Table 3.no failure was observed with respect to thermal environmental test and mechanical environmental test. 3.2 High Temperature DC Bias Test High temperature DC bias test at Ta=200t was performed for UPC8182B(B) using 100 samples. The test was performed for 3000 hours. The test results are shown Table 3.No failure has been observed for 3000 hours. LlIcc change is shown in Fig.1. Thermal Environmental Test Mechanical Environmental Test High Temperature DC Bias Test (Table. 1.2) (Table. 1.2) (Table. 1.2)
GET-BE-0006 3/4 Table I Test Items Thermal Environmental Test a)Solderability , b)Temperature Cycling c)Thermal Shock d)Moisture Resistance e)Hermetic Seal 2003 1010:Cond.D -65'C 1011:Cond.A O'C +200'C.IOOcycles +100'C.15cycles 8 Test Item and Test Condition Test Condition MIL-STD 883 Method Sample Size
1004:0mit initial conditioning 1071 Fine Leak (Cond.Al) 1 X 10-9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble
Mechanical Environmental Test a)Mechanical Shock b)Vibration. Variable Frequency c)Constant Acceleration d)Hermetic Seal
2002: 1.47 x 104rn/s2(1500G).0.5ms.3axis.5times 2007:100 2000Hz. 196rn/S2(20G).3axis. 8 4min.4times 2001: 1.96 x 105rn/s2(20000G).3axis.1min..1time 1071 Fine Leak (Cond.A1) 1 X 10- 9 Pa m3/s (-1 X 10-8 atmcdsec) Gross Leak (Cond.C) no stream bubble
Hi
erature DC Bias Test
1005:Ta=200'C.Vcc=3V.t=3000Hrs
100
Table 2 Parameters and Criteria Limits Parameters Circuit Current Power Gain Symbols Icc G1 G2 G3
Output Power Pout
Test Condition Vcc=3V Vcc=3V.f=0.9GHz Vcc=3V,f=1.9GHz Vcc=3V,f=2.4GHz Vcc=3V,f=2.4GHz
Pin=-5dBm
Delta Criteria Min 19dB 18dB 18dB
7 dBm
Max 38mA 25dB 24dB 24dB
-
:t 15%
-
Noise Fi ure
NF
Vcc=3V.f=2.4GHZ
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6.5dB
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GET-BE-OOO6 4/4 Table 3 Qualification Test Results Results
Test Items " lfailure/sample! \ Reference
Thermal Environmental Test Mechanical Environmental Test High Temp. DC Bias Test 1 0/100
0/8 0/8 (at 3000Hrs)
-
-
15.00%
LlIcc
* g
;
10.00%
5.00%
0.00%
-5.00%
~
2000 3000
~
~MAX -e:- AVE
-.- MIN
0 168 336 1000 hours
-10.00% -15.00%
Fig.1 Icc changeson high temperature DC Bias Test.
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