NDL5551P1C

1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE FEATURES • SMALLER DARK CURRENT: ID = 5 nA • HIGH QUANTUM EFFICIENCY: η = 90% at λ = 1300 nm, M = 1 η = 77% at λ = 1550 nm, M = 1 • HIGH SPEED RESPONSE: fC = 1.2 GHz @ M = 20 • DETECTING AREA SIZE: φ 50 µm • COAXIAL MODULE WITH MULTIMODE FIBER: GI-50/125 NDL5551P SERIES DESCRIPTION The NDL5551P Series are InGaAs PIN photo diode modules with multimode fiber. They are designed for detectors of long wavelength transmission systems and cover the wavelength range setween 1000 and 1600 nm. ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C) PART NUMBER SYMBOLS V(BR)R δ1 ID IDM Ct fC η S M x F Note: PARAMETERS AND CONDITIONS Reverse Breakdown Voltage, ID =100 µA Temperature Coefficient of Reverse Breakdown Voltage Dark Current, VR = V(BR)R x 0.9 Multiplied Dark Current, M = 2 to 10 Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz Cut-off Frequency, M = 10 M = 20 Quantum Efficiency, λ = 1300 nm, M = 1 λ = 1550 nm, M = 1 Responsivity, λ = 1300 nm λ = 1550 nm Multiplication Factor, λ = 1300 nm, IPO = 1.0 µA VR = V (@ID = 1 µA) Excess Noise Exponent, λ = 1300 nm, 1550 nm, IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz Excess Noise Factor, λ = 1300 nm, 1550 nm, IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz UNITS V %/ºC nA nA pF GHz % A/W 1 76 65 0.8 0.81 30 MIN 50 NDL5551P Series TYP 70 0.2 5 1 0.4 1.5 1.2 90 77 0.94 0.96 40 0.7 5 30 5 0.75 MAX 100 1. δ = V(BR)R < 25°C + ∆T°C > - V(BR)R ∆T°C • V(BR)R California Eastern Laboratories NDL5551P SERIES ABSOLUTE MAXIMUM RATINGS1 (TC = 25°C, unless otherwise specified) SYMBOLS IF IR TC TSTG PARAMETERS Forward Current Reverse Current Operating Case Temp. Storage Temperature UNITS mA mA °C °C RATINGS 10 0.5 -40 to +85 -40 to +85 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified) WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY TEMPERATURE DEPENDENCE OF RESPONSIVITY Responsivity (Relative Value), ∆S/S (%) 100 10 λ = 1300 nm Quantum Efficiency, η (%) 80 60 0 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -10 -60 -40 -20 0 20 40 60 80 100 Wavelength, λ (µm) Operating Case Temperature, TC (°C) DARK CURRENT AND PHOTO CURRENT VS. REVERSE VOLTAGE Dark Current, Photo Current, ID, lph (A) 10-3 10-4 10-5 10-6 10-7 10-8 10-9 -10 10 λ = 1300 nm IPO = 1.0 µA TC = 25°C -6 DARK CURRENT vs. REVERSE VOLTAGE 10-7 Dark Current, ID (A) lph TC = 85°C 10-8 TC = 65°C 10-9 TC = 25°C TC = -20°C 10-10 ID 10 0 20 40 60 80 100 0 20 40 60 80 100 Reverse Voltage, VR (V) Reverse Voltage, VR (V) NDL5551P SERIES TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified) MULTIPLICATION FACTOR vs. REVERSE VOLTAGE TEMPERATURE DEPENDENCE OF DARK CURRENT and MULTIPLIED DARK CURRENT Dark Current, Multiplied Dark Current ID, IDM (A) 103 10-6 λ = 1300 nm Multiplication Factor, M TC = 65°C 102 TC = -20°C TC = 25°C 10-7 ID @ VR = 0.9 V(BR)R 10-8 10-9 IDM 101 TC = 85°C 10-10 100 0 20 40 60 80 100 10-11 -60 -40 -20 0 20 40 60 80 100 Reverse Voltage, VR (V) Operating Case Temperature, TC (ºC) CUT-OFF FREQUENCY vs. MULTIPLICATION FACTOR 10 TC = 25°C FREQUENCY RESPONSE λ = 1300 nm RL = 50Ω M=8 TC = 25°C Cut-off Frequency, fC (GHz) 5.0 Response, (3 dB/div.) 1 0 1.0 2.0 3.0 4.0 0.1 Frequency, f (GHz) 1 10 100 Multiplication Factor, M TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 100 2 EXCESS NOISE FACTOR vs. MULTIPLICATION FACTOR 1300 nm ( ), 1550 nm ( ) f = 35 MHz, B = 1 MHz Terminal Capacitance, Ct (pF) 50 Excess Noise Factor, F 0.5 20 0.4 1 10 5 0.5 0.2 2 0.1 1 2 5 10 20 50 100 1 1 2 5 10 20 50 100 Reverse Voltage, VR (V) Multiplication Factor, M NDL5551P SERIES OUTLINE DIMENSIONS (Units in mm) NDL5551P NDL5551P1 Optical Fiber GI-50/125 Length: 1 m MIN Shrunk Tube Optical Fiber GI-50/125 Length: 1 m MIN Shrunk Tube φ2.5 30.0 MAX φ6.0 - 0.1 +0.0 φ2.5 14.0±0.1 30.0 MAX 6.9±0.3 φ6.0- 0.1 12.5 MIN φ0.45 3 1 +0.0 6.9±0.3 3.9±0.5 4.0±0.1 φ2.2 (2 places) 12.5 MIN 6.0 - 0.1 +0.0 2 3.0±0.3 φ2.0 7.0±0.3 2 3 1 4.0±0.3 1.5 φ2.0 18.0±0.1 3 1 PIN CONNECTIONS 1. Anode (Negative) 2. Cathode (Positive) 3. Case NDL5551P2 2 ORDERING INFORMATION PART NUMBER NDL5551P NDL5551PC NDL5551PD NDL5551P1 NDL5551P1C NDL5551P1D NDL5551P2 NDL5551P2C NDL5551P2D AVAILABLE CONNECTOR Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector DESCRIPTION No Flange Optical Fiber GI-50/125 Length: 1 m MIN Shrunk Tube Flat Mount Flange Vertical Flange φ2.5 30.0 MAX φ6.0- 0.1 2.5±0.1 0.5±0.1 +0.0 12.5 MIN φ2.5 (2 places) 2 3 1 7.0±0.15 φ2.0 12.0±0.1 16.0±0.2 NDL5551P SERIES HANDLING PRECAUTION FOR PD/APD MODULE The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling precautions: 1. Do not make the fiber bend radius less than 30 mm (*3). 2. Do not bend the fiber within the 18 mm section from the module body (*4). 3. Do not stress the ferrule with a lateral force exceeding 500 g (*5). fiber 30 mm MIN (*3) (*1) 18 mm MIN (*4) ferrule (*5) (*2) module body EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 01/17/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE