NE321000_01

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 • GATE LENGTH: ≤0.2 µm • GATE WIDTH: 160 µm DESCRIPTION NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Drain Current, ID (mA) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V, VGS = 0 V Pinch-off Voltage, VDS = 2 V, ID = 100 µA Transconductance, VDS = 2 V, ID = 10 µA Gate to Source Leakage Current, VGS = -3 V UNITS dB dB mA V mS µA 12.0 15 -0.2 40 MIN NE321000 CHIP TYP 0.35 13.5 40 -0.7 55 0.5 10 70 -2.0 MAX 0.45 Note: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. California Eastern Laboratories Associated Gain, GA (dB) • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz NE321000 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS IG PT2 TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V mA µA mW °C °C RATINGS 4.0 -3.0 IDSS 100 200 175 -65 to +175 RECOMMENDED OPERATING CONDITIONS (TA = 25°C) PART NUMBER SYMBOLS VDS ID PIN PARAMETERS Drain to Source Voltage Drain Current Input Power V mA dBm 1 5 – NE321000 UNITS MIN TYP MAX 2 10 – 3 15 0 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heat sink. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25°C) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. DRAIN CURRENT 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) Total Power Dissipation, (PT) mW VDS = 2 V ID = 10 mA 20 MSG. 200 150 16 100 12 (S21S)2 50 8 4 0 50 100 150 200 250 1 2 4 6 8 10 14 20 30 Ambient Temperature, TA (°C) Frequency, f (GHz) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 2 V Drain Current, IDS (mA) Drain Current, IDS (mA) 80 60 60 40 VGS = 0 V 40 -0.2 V 20 -0.4 V -0.6 V 20 0 0 1.0 2.0 -2.0 -1.0 0 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) NE321000 NOISE PARAMETERS VDS = 2 V, ID = 10 mA FREQ.(GHz) NF MIN (dB) GA (dB) MAG 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.21 0.22 0.24 0.26 0.28 0.31 0.38 0.45 0.52 0.59 0.66 0.72 0.79 19.5 17.6 15.9 14.6 13.5 12.7 12.1 11.6 11.3 11.2 11.1 11.2 11.2 0.94 0.87 0.82 0.77 0.73 0.69 0.67 0.64 0.63 0.62 0.61 0.62 0.63 Γopt ANG (DEG) 3.7 8.2 13.3 18.8 24.8 31.4 38.4 45.9 53.9 62.4 71.4 80.8 90.8 0.31 0.31 0.32 0.32 0.32 0.31 0.31 0.30 0.29 0.28 0.27 0.25 0.23 RN/50 CHIP DIMENSIONS (Units in µm) NE321000 (CHIP) 58 38 ORDERING INFORMATION PART NUMBER NE321000 QUALITY GRADE Standard (Grade D) 27 56 38 38 SOURCE 63 DRAIN SOURCE 69 GATE 36 61 26 300 56 38 Bonding Pad Area Chip Thickness: 140 µm typical Note: All dimensions are typical unless otherwise specified 38 224 300 NE321000 TYPICAL SCATTERING PARAMETERS 1.0 0.5 (TA = 25°C) 90˚ 120˚ -9 60˚ S11 42 GHz S22 42 GHz 2.0 -11.5 150˚ 30˚ -15 0.2 5.0 S21 2 GHz 0.0 0.0 0.2 0.5 1.0 2.0 5.0 -21 ∞ 180˚ S12 2 GHz 2 0˚ S22 2 GHz -0.2 S11 2 GHz -5.0 -150˚ S21 42 GHz S12 42 GHz 8 -30˚ 11.5 -0.5 -1.0 -2.0 -120˚ 14 -90˚ -60˚ VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 Notes: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.979 0.952 0.918 0.876 0.806 0.756 0.704 0.652 0.599 0.547 0.500 0.459 0.425 0.398 0.380 0.370 0.365 0.365 0.373 0.388 0.412 0.444 0.485 0.532 0.584 0.636 0.681 0.723 0.752 0.771 0.771 0.760 0.749 0.722 0.719 0.686 0.630 0.689 0.719 0.729 0.743 ANG -15.88 -24.04 -32.49 -41.18 -53.05 -62.14 -71.41 -81.35 -91.60 -102.52 -113.97 -126.08 -138.72 -151.46 -164.21 -176.46 171.42 159.53 147.72 136.67 126.56 117.17 108.32 100.27 93.50 87.38 81.46 76.25 71.46 67.12 62.95 59.66 57.15 56.15 53.23 49.28 48.81 49.24 41.34 35.32 30.50 MAG 4.700 4.658 4.602 4.536 4.557 4.400 4.241 4.086 3.925 3.757 3.591 3.418 3.241 3.069 2.904 2.750 2.606 2.476 2.358 2.252 2.146 2.042 1.936 1.819 1.697 1.584 1.471 1.361 1.253 1.158 1.074 1.003 0.953 0.909 0.882 0.870 0.825 0.734 0.712 0.694 0.686 S21 ANG 161.37 152.38 143.31 134.13 123.19 114.52 105.89 97.18 88.59 80.01 71.67 63.45 55.38 47.70 40.36 33.25 26.43 19.76 13.28 6.48 -0.14 -6.88 -13.88 -20.82 -27.48 -33.95 -40.30 -46.28 -51.33 -55.59 -58.96 -61.95 -63.99 -66.52 -68.19 -71.76 -77.56 -79.13 -79.03 -80.94 -83.24 MAG 0.030 0.045 0.059 0.072 0.087 0.097 0.107 0.116 0.125 0.132 0.140 0.146 0.153 0.160 0.166 0.174 0.183 0.194 0.206 0.220 0.235 0.250 0.268 0.284 0.297 0.309 0.322 0.332 0.340 0.349 0.361 0.382 0.408 0.428 0.453 0.495 0.504 0.441 0.466 0.498 0.534 S12 ANG 0.10 75.46 70.71 65.92 59.37 55.24 51.14 47.15 43.28 39.42 36.01 32.77 29.59 26.77 24.33 22.07 19.95 17.75 15.55 12.96 10.24 7.23 3.56 -0.73 -5.09 -9.24 -13.52 -17.90 -21.67 -24.79 -27.19 -29.77 -33.01 -37.73 -40.45 -46.46 -57.77 -60.27 -59.22 -62.84 -67.39 MAG 0.631 0.618 0.598 0.574 0.517 0.492 0.463 0.428 0.390 0.351 0.313 0.279 0.247 0.221 0.206 0.195 0.188 0.187 0.183 0.182 0.187 0.198 0.226 0.268 0.320 0.384 0.449 0.514 0.571 0.618 0.654 0.672 0.677 0.685 0.695 0.672 0.634 0.683 0.703 0.706 0.710 S22 ANG -11.44 -16.89 -22.57 -28.45 -37.47 -42.71 -47.93 -53.46 -59.62 -66.37 -74.06 -83.24 -93.60 -105.60 -118.23 -131.11 -144.12 -156.14 -168.03 178.67 163.83 146.97 130.10 114.53 101.53 91.41 83.86 77.47 72.94 69.72 67.81 65.90 64.49 64.23 61.49 57.54 56.85 54.33 43.64 32.69 21.48 K .1722 .2556 .3306 .4049 .4996 .5640 .6273 .6880 .7465 .8071 .8563 .9044 .9466 .9833 1.014 1.035 1.050 1.054 1.055 1.046 1.033 1.020 .9985 .9814 .9648 .9449 .9259 .9078 .8978 .8916 .8963 .9002 .8963 .8730 .8756 .8782 .8353 .8086 .9024 .9503 .9733 S21 (dB) 13.44 13.36 13.26 13.13 13.17 12.87 12.55 12.23 11.88 11.50 11.10 10.68 10.21 9.74 9.26 8.79 8.32 7.88 7.45 7.05 6.63 6.20 5.74 5.20 4.59 3.99 3.35 2.68 1.96 1.27 -.42 .03 -.42 -.83 -1.09 -1.21 -1.67 -2.69 -2.95 -3.17 -3.27 MAG1 (dB) 21.95 20.15 18.92 17.99 17.19 16.57 15.98 15.47 14.97 14.54 14.09 13.69 13.26 12.83 11.69 10.85 10.16 9.63 9.16 8.79 8.45 8.25 8.59 8.07 7.57 7.10 6.60 6.13 5.67 5.21 3.68 4.19 3.68 3.27 2.89 2.45 2.14 2.21 1.84 1.44 1.09 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available gain MSG = Maximum Stable Gain 2. S Parameters include bond wires. Gate : Total 1 wire(s), 1 per bond pad,(426 µm) long each wire ; 131 µm height. Drain : Total 1 wire(s), 1 per bond pad,(409 µm) long each wire ; 214 µm height. Source : Total 2 wire(s), 2 per side,(665 µm) long each wire ; 315 µm height. Wire : .001in (25.4 µm) Dia., Gold. NE321000 TYPICAL SCATTERING PARAMETERS 1.0 120˚ (TA = 25°C) 90˚ -9 60˚ 0.5 S11 42 GHz 0.2 2.0 -11.5 150˚ -15 S22 42 GHz 5.0 30˚ S21 2 GHz 0.0 -21 ∞ 180˚ S12 2 GHz 2 0˚ S22 2 GHz -0.2 -5.0 S11 2 GHz -150˚ 8 S21 42 GHz S12 42 GHz -30˚ 11.5 -0.5 -2.0 -120˚ -60˚ 14 -90˚ -1.0 VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 S11 MAG 0.971 0.936 0.892 0.840 0.758 0.702 0.645 0.591 0.538 0.487 0.444 0.407 0.378 0.355 0.342 0.336 0.336 0.338 0.350 0.367 0.393 0.426 0.467 0.516 0.570 0.623 0.669 0.712 0.745 0.763 0.764 0.753 0.739 0.713 0.710 0.676 0.621 0.681 0.717 0.722 0.736 ANG -17.52 -26.34 -35.36 -44.45 -56.82 -65.96 -75.18 -84.98 -95.11 -105.94 -117.44 -129.71 -142.53 -155.53 -168.46 179.30 167.17 155.65 144.19 133.64 124.22 115.44 107.05 99.57 93.25 87.32 81.70 76.64 71.90 67.71 63.52 59.97 57.65 56.94 54.09 50.40 50.50 50.65 42.74 36.64 32.15 MAG 5.909 5.803 5.665 5.505 5.430 5.169 4.915 4.673 4.436 4.204 3.984 3.770 3.558 3.356 3.168 2.993 2.831 2.684 2.551 2.434 2.314 2.200 2.086 1.958 1.825 1.705 1.585 1.470 1.357 1.257 1.173 1.101 1.044 0.993 0.963 0.943 0.891 0.796 0.776 0.753 0.735 S21 ANG 159.51 149.78 140.08 130.44 119.35 110.60 102.02 93.54 85.26 77.11 69.25 61.52 53.95 46.74 39.82 33.08 26.62 20.28 14.13 7.60 1.30 -5.19 -11.91 -18.67 -25.00 -31.27 -37.39 -43.19 -48.18 -52.43 -55.92 -59.01 -61.42 -63.93 -65.83 -69.59 -75.50 -76.38 -77.41 -79.78 -82.08 S12 MAG 0.027 0.040 0.052 0.064 0.077 0.087 0.096 0.105 0.114 0.123 0.131 0.140 0.148 0.157 0.167 0.177 0.188 0.201 0.214 0.229 0.244 0.260 0.278 0.293 0.306 0.317 0.329 0.338 0.346 0.354 0.365 0.386 0.411 0.429 0.454 0.495 0.505 0.444 0.470 0.502 0.540 ANG 80.79 76.70 72.46 68.23 62.59 59.09 55.73 52.42 49.16 45.79 42.69 39.68 36.58 33.53 30.71 27.99 25.26 22.47 19.58 16.30 13.05 9.40 5.31 0.68 -3.99 -8.37 -12.88 -17.40 -21.20 -24.36 -26.95 -29.64 -32.78 -37.54 -40.15 -45.93 -57.01 -59.39 -58.62 -62.02 -66.72 MAG 0.547 0.535 0.515 0.492 0.434 0.412 0.387 0.357 0.326 0.292 0.259 0.228 0.198 0.173 0.159 0.149 0.144 0.145 0.144 0.146 0.154 0.170 0.203 0.250 0.305 0.370 0.435 0.500 0.556 0.602 0.638 0.655 0.658 0.665 0.674 0.650 0.618 0.672 0.692 0.694 0.698 S22 ANG -10.86 -15.95 -21.15 -26.46 -34.92 -39.33 -43.65 -48.18 -53.36 -59.13 -66.01 -74.73 -84.91 -97.54 -111.74 -126.18 -141.58 -155.37 -169.00 175.97 159.66 141.69 124.84 109.99 97.78 88.43 81.48 75.71 71.59 68.66 67.01 65.37 64.16 64.34 61.90 58.17 58.16 55.59 44.78 34.03 22.74 K .218 .317 .410 .496 .601 .668 .734 .791 .842 .889 .929 .959 .989 1.013 1.024 1.034 1.039 1.037 1.034 1.024 1.014 1.002 .986 .973 .961 .947 .933 .919 .910 .906 .909 .912 .908 .883 .884 .885 .832 .808 .889 .940 .965 S21 (dB) 15.43 15.27 15.06 14.82 14.70 14.27 13.83 13.39 12.94 12.47 12.01 11.53 11.02 10.52 10.02 9.522 9.039 8.576 8.134 7.726 7.287 6.848 6.386 5.836 5.225 4.634 4.001 3.346 2.652 1.987 1.386 .836 .374 -.061 -.328 -.510 -1.002 -1.982 -2.203 -2.464 -2.674 MAG1 (dB) 23.40 21.62 20.37 19.35 18.48 17.74 17.09 16.48 15.90 15.34 14.83 14.30 13.81 12.60 11.83 11.15 10.57 10.07 9.639 9.318 9.048 8.994 8.753 8.249 7.755 7.307 6.828 6.384 5.935 5.503 5.070 4.552 4.049 3.645 3.266 2.799 2.466 2.535 2.178 1.761 1.339 Notes: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available gain MSG = Maximum Stable Gain 2. S Parameters include bond wires. Gate : Total 1 wire(s), 1 per bond pad,(426 µm) long each wire ; 131 µm height. Drain : Total 1 wire(s), 1 per bond pad,(409 µm) long each wire ; 214 µm height. Source : Total 2 wire(s), 2 per side,(665 µm) long each wire ; 315 µm height. Wire : .001in (25.4 µm) Dia., Gold. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE321000 NE321000 NONLINEAR MODEL SCHEMATIC Ldx DRAIN Lgx GATE 0.39nH Lsx 0.13nH Q1 0.39nH CGSx 0.02pF CDSx 0.02PF SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.774 0 8 0.102 0.085 0.08 2.5 0.8 0.6 1e-14 1 0 0 2e-12 0.08e-12 5000 1e-9 0.21e-12 0.025e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 3 3 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 2 to 28 GHz Bias: VDS = 1 V to 3 V, ID = 1 mA to 30 mA Date: 10/99 (1) Series IV Libra TOM Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 02/20/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE