NE32500

NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: LG = 0.20 µm • GATE WIDTH: WG = 200 µm 89 25 13 Drain NE32500 OUTLINE DIMENSIONS (Units in µm) CHIP 58 5.5 36.5 13 66 25 38 68 DESCRIPTION NEC's NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 350 76.5 Source Source 100.5 Gate 21 25 25 13 66 49.5 43 350 60 46.5 Thickness = 140 µm Bonding Area ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA IDSS gm IGSO VGS(off) RTH (CH-C) PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V,VGS = 0 V Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3 V Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA Thermal Resistance1 (Channel to Case) UNITS dB dB mA mS µA V °C/W -0.2 11.0 20 45 MIN NE32500 00 (Chip) TYP 0.45 12.5 60 60 0.5 -0.7 10.0 -2.0 260 90 MAX 0.55 Note: 1. RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. California Eastern Laboratories NE32500 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation2 Channel Temperature Storage Temperature UNITS V V mA mW °C °C RATINGS 4.0 -3.0 IDSS 200 175 -65 to +175 VDS = 2 V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Drain Current, ID (mA) 60 40 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t) 20 0 -2.0 -1.0 0 Gate to Source Voltage, VGS (V) TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Total Power Dissipation, PT (mW) Drain Current, ID (mA) 200 80 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 150 100 50 -0.6 V -0.8 V 0 0 50 100 150 200 250 0 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA GA NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 14 GA 13 12 2.0 1.5 1.0 0.5 11 10 16 1.0 12 0.5 NF 0 1 2 4 6 8 10 14 20 30 8 Associated Gain, GA (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) 20 NF 4 0 10 20 30 Frequency, f (GHz) Drain Current, ID (mA) Associated Gain, GA (dB) NE32500 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE32500 VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain S11 MAG 0.999 0.998 0.996 0.992 0.976 0.962 0.962 0.943 0.928 0.920 0.900 0.881 0.869 0.856 0.839 0.831 0.818 0.804 0.796 0.784 0.782 ANG -4 -7 -14 -20 -28 -36 -42 -48 -55 -60 -67 -72 -77 -82 -86 -91 -96 -99 -103 -106 -111 MAG 4.34 4.33 4.28 4.24 4.169 4.11 4.06 3.95 3.83 3.73 3.58 3.46 3.334 3.23 3.11 3.01 2.88 2.78 2.68 2.59 2.49 S21 ANG 177 174 168 163 158 152 148 143 139 134 129 126 122 118 115 112 108 105 103 100 96 MAG S12 ANG 82 84 81 76 71 66 62 58 55 51 47 43 40 37 34 32 29 27 24 22 20 MAG 0.564 0.562 0.559 0.557 0.551 0.546 0.539 0.533 0.526 0.519 0.508 0.503 0.494 0.488 0.483 0.476 0.472 0.468 0.464 0.460 0.456 0.006 0.012 0.025 0.037 0.048 0.060 0.070 0.079 0.087 0.095 0.104 0.109 0.114 0.120 0.123 0.127 0.131 0.134 0.137 0.0141 0.142 S22 ANG -3 -6 -11 -17 -23 -29 -34 -40 -44 -49 -54 -58 -62 -66 -69 -72 -76 -79 -81 -84 -88 MAG = ORDERING INFORMATION PART NE32500 NE32500N NE32500M IDSS SELECTION (mA) 20 to 90 (Standard) 0 to 60 50 to 90 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 6/21/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE 1-32