NE3509M04

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • GPS antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free) Quantity 50 pcs (Non reel) 3 kpcs/reel Marking V80 Supplying Form • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4.0 −3.0 IDSS 200 150 +150 −65 to +150 Unit V V mA µA mW °C °C Tch Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10608EJ01V0DS (1st edition) Date Published April 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. − − − TYP. 2 10 − MAX. 3 20 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Gain 1 dB Compression Output Power Symbol IGSO IDSS VGS (off) gm NF Ga PO (1 dB) VDS = 2 V, ID = 10 mA (Non-RF), f = 2 GHz VGS = −3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 50 µA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 2 GHz Test Conditions MIN. − 30 −0.25 80 − 16 − TYP. 0.5 45 −0.5 − 0.4 17.5 11 MAX. 10 60 −0.75 − 0.7 − − Unit µA mA V mS dB dB dBm 2 Data Sheet PG10608EJ01V0DS NE3509M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Total Power Dissipation Ptot (mW) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 45 Drain Current ID (mA) Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 VDS = 2 V 40 35 30 25 20 15 10 5 0 –1.0 150 100 50 0 50 100 150 200 250 –0.8 –0.6 –0.4 –0.2 0 Ambient Temperature TA (˚C) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2.0 Minimum Noise Figure NFmin (dB) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 Frequency f (GHz) NFmin Ga Associated Gain Ga (dB) 14 12 10 8 6 4 2 0 15 Drain Current ID (mA) 20 VDS = 2 V 18 ID = 10 mA 16 80 VGS = 0 V 60 40 –0.1 V –0.2 V 20 –0.3 V –0.4 V –0.5 V 0 1 2 3 4 5 Drain to Source Voltage VDS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 2.0 Minimum Noise Figure NFmin (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE 2.0 Minimum Noise Figure NFmin (dB) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 NFmin Ga Associated Gain Ga (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.0 1.5 2.0 16 14 12 10 8 6 14 12 10 8 6 4 2 20 30 0 40 NFmin 4 2 2.5 3.0 0 3.5 Drain Current ID (mA) Drain to Source Voltage VDS (V) Remark The graphs indicate nominal characteristics. Data Sheet PG10608EJ01V0DS 3 Associated Gain Ga (dB) 20 f = 2.0 GHz 18 VDS = 2 V 16 1.8 f = 2.0 GHz, ID = 10 mA Ga 20 18 NE3509M04 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 2.0 Minimum Noise Figure NFmin (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE 2.0 Minimum Noise Figure NFmin (dB) 20 f = 2.5 GHz, VDS = 2 V Ga 18 Associated Gain Ga (dB) 20 f = 2.5 GHz, ID = 10 mA 18 16 14 12 10 8 6 NFmin 4 2 1.5 2.0 2.5 3.0 0 3.5 Associated Gain Ga (dB) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 16 14 12 10 8 6 NFmin 4 2 10 20 30 0 40 Ga 0.0 1.0 Drain Current ID (mA) Drain to Source Voltage VDS (V) OUTPUT POWER, IM3, DRAIN CURRENT vs. INPUT POWER 40 Output power Pout (2 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 50 45 OIP3 = +25 dBm Pout (2 tone) 40 IIP3 = +7.5 dBm 35 30 IM3 (L) IM3 (H) 25 20 15 10 30 20 10 –10 –20 –30 –40 –50 –60 –70 –80 –25 –20 –15 ID f = 2.5 GHz, VDS = 2 V ID = 10 mA (Non-RF) –5 0 5 10 15 5 0 –10 Input Power Pin (2 tone) (dBm) Remark The graphs indicate nominal characteristics. 4 Data Sheet PG10608EJ01V0DS Drain Current ID (mA) 0 NE3509M04 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PG10608EJ01V0DS 5 NE3509M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 2.05±0.1 0.40+0.1 –0.05 (Bottom View) 0.30+0.1 –0.05 1.25±0.1 2 3 (1.05) 3 2 0.60 0.65 V80 2.0±0.1 0.65 1 4 0.65 4 0.30+0.1 –0.05 0.59±0.05 PIN CONNECTIONS 1. 2. 3. 4. Source Drain Source Gate 6 Data Sheet PG10608EJ01V0DS 0.11+0.1 –0.05 0.30+0.1 –0.05 1 2.0±0.1 1.30 1.25 1.30 1.25 NE3509M04 MOUNTING PAD DIMENSIONS (REFERENCE ONLY) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) 1.6 2 1.25 0.6 3 0.5 0.6 1 4 1.3 Data Sheet PG10608EJ01V0DS 7 NE3509M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Condition Symbol IR260 For soldering Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10608EJ01V0DS 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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